CN116897414A - 等离子体蚀刻技术 - Google Patents

等离子体蚀刻技术 Download PDF

Info

Publication number
CN116897414A
CN116897414A CN202280017300.3A CN202280017300A CN116897414A CN 116897414 A CN116897414 A CN 116897414A CN 202280017300 A CN202280017300 A CN 202280017300A CN 116897414 A CN116897414 A CN 116897414A
Authority
CN
China
Prior art keywords
plasma
layer
germanium
nitrogen
containing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280017300.3A
Other languages
English (en)
Chinese (zh)
Inventor
栾平山
艾兰·莫斯登
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Yili Science And Technology Innovation Usa Holdings Ltd
Tokyo Electron Ltd
Original Assignee
Tokyo Yili Science And Technology Innovation Usa Holdings Ltd
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Yili Science And Technology Innovation Usa Holdings Ltd, Tokyo Electron Ltd filed Critical Tokyo Yili Science And Technology Innovation Usa Holdings Ltd
Publication of CN116897414A publication Critical patent/CN116897414A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN202280017300.3A 2021-01-28 2022-01-24 等离子体蚀刻技术 Pending CN116897414A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/161,199 2021-01-28
US17/161,199 US11482423B2 (en) 2021-01-28 2021-01-28 Plasma etching techniques
PCT/US2022/013558 WO2022164759A1 (en) 2021-01-28 2022-01-24 Plasma etching techniques

Publications (1)

Publication Number Publication Date
CN116897414A true CN116897414A (zh) 2023-10-17

Family

ID=82496031

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280017300.3A Pending CN116897414A (zh) 2021-01-28 2022-01-24 等离子体蚀刻技术

Country Status (6)

Country Link
US (1) US11482423B2 (https=)
JP (1) JP2024505507A (https=)
KR (1) KR20230131945A (https=)
CN (1) CN116897414A (https=)
TW (1) TW202238717A (https=)
WO (1) WO2022164759A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12272558B2 (en) * 2022-05-09 2025-04-08 Tokyo Electron Limited Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification
WO2025174546A1 (en) * 2024-02-12 2025-08-21 Applied Materials, Inc. Selective etching of silicon-and-germanium-containing materials with reduced under layer loss
WO2025244994A1 (en) * 2024-05-21 2025-11-27 Lam Research Corporation Selective etch of stack using a nitrogen and fluorine containing gas

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150126039A1 (en) * 2013-11-04 2015-05-07 Applied Materials, Inc. Etch suppression with germanium
CN111512420A (zh) * 2017-12-29 2020-08-07 乔治洛德方法研究和开发液化空气有限公司 用于3d nand器件应用的用非等离子体干式工艺进行的sin对sio2的选择性蚀刻
US20200266070A1 (en) * 2019-02-20 2020-08-20 Tokyo Electron Limited Method for Selective Etching at an Interface Between Materials
US20210020454A1 (en) * 2019-07-18 2021-01-21 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of metals

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596597B2 (en) * 2001-06-12 2003-07-22 International Business Machines Corporation Method of manufacturing dual gate logic devices
US8389416B2 (en) * 2010-11-22 2013-03-05 Tokyo Electron Limited Process for etching silicon with selectivity to silicon-germanium
JP5819243B2 (ja) * 2012-04-23 2015-11-18 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP5851349B2 (ja) 2012-06-04 2016-02-03 株式会社日立ハイテクノロジーズ プラズマエッチング方法及びプラズマエッチング装置
US9419107B2 (en) 2014-06-19 2016-08-16 Applied Materials, Inc. Method for fabricating vertically stacked nanowires for semiconductor applications
US9653291B2 (en) * 2014-11-13 2017-05-16 Applied Materials, Inc. Method for removing native oxide and residue from a III-V group containing surface
JP6426489B2 (ja) * 2015-02-03 2018-11-21 東京エレクトロン株式会社 エッチング方法
US9786664B2 (en) * 2016-02-10 2017-10-10 International Business Machines Corporation Fabricating a dual gate stack of a CMOS structure
KR102323389B1 (ko) 2016-03-02 2021-11-05 도쿄엘렉트론가부시키가이샤 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭
US10177227B1 (en) * 2017-08-28 2019-01-08 Applied Materials, Inc. Method for fabricating junctions and spacers for horizontal gate all around devices
US11069819B2 (en) * 2019-10-30 2021-07-20 Globalfoundries U.S. Inc. Field-effect transistors with channel regions that include a two-dimensional material on a mandrel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150126039A1 (en) * 2013-11-04 2015-05-07 Applied Materials, Inc. Etch suppression with germanium
CN111512420A (zh) * 2017-12-29 2020-08-07 乔治洛德方法研究和开发液化空气有限公司 用于3d nand器件应用的用非等离子体干式工艺进行的sin对sio2的选择性蚀刻
US20200266070A1 (en) * 2019-02-20 2020-08-20 Tokyo Electron Limited Method for Selective Etching at an Interface Between Materials
US20210020454A1 (en) * 2019-07-18 2021-01-21 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of metals

Also Published As

Publication number Publication date
TW202238717A (zh) 2022-10-01
JP2024505507A (ja) 2024-02-06
US20220238344A1 (en) 2022-07-28
KR20230131945A (ko) 2023-09-14
US11482423B2 (en) 2022-10-25
WO2022164759A1 (en) 2022-08-04

Similar Documents

Publication Publication Date Title
JP7812042B2 (ja) プラズマエッチング技術
US9570317B2 (en) Microelectronic method for etching a layer
US11837467B2 (en) Plasma etching techniques
US9093389B2 (en) Method of patterning a silicon nitride dielectric film
US8252194B2 (en) Methods of removing silicon oxide
CN108573866B (zh) 氧化膜去除方法和装置以及接触部形成方法和系统
WO2021257301A1 (en) Forming a semiconductor device using a protective layer
CN116897414A (zh) 等离子体蚀刻技术
CN107438892A (zh) 等离子处理方法以及等离子处理装置
Wang et al. Scaling of atomic layer etching of SiO2 in fluorocarbon plasmas: Transient etching and surface roughness
TW201903828A (zh) 氧化膜去除方法及去除裝置、接觸部形成方法及接觸部形成系統、以及記憶媒體
US9773674B2 (en) Method for forming patterns by implanting
CN108321090A (zh) 半导体器件及其形成方法
TW202410199A (zh) 藉由新式化學品及表面改質的矽相對矽鍺合金及介電質之選擇性且等向性蝕刻
TWI913411B (zh) 電漿蝕刻方法
TWI913396B (zh) 電漿蝕刻技術
CN119234298A (zh) 用于低温和高温下的高深宽比电介质蚀刻的硬掩模
TW202201760A (zh) 在微電子工件上於三維結構中用於接觸窗的凸墊形成
TWI458011B (zh) 蝕刻多層硬式幕罩的方法
Khurana et al. Selective Atomic Layer Etching for Silicon Device Fabrication
TW202605904A (zh) 低k材料之自限蝕刻
Michaud AVS 71 Session PS-TuM: Advanced Memory, HARC, and Cryo Etching

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination