JP2024506618A5 - - Google Patents
Info
- Publication number
- JP2024506618A5 JP2024506618A5 JP2023547796A JP2023547796A JP2024506618A5 JP 2024506618 A5 JP2024506618 A5 JP 2024506618A5 JP 2023547796 A JP2023547796 A JP 2023547796A JP 2023547796 A JP2023547796 A JP 2023547796A JP 2024506618 A5 JP2024506618 A5 JP 2024506618A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- plasma
- germanium
- silicon layer
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/171,742 | 2021-02-09 | ||
| US17/171,742 US11538690B2 (en) | 2021-02-09 | 2021-02-09 | Plasma etching techniques |
| PCT/US2022/014996 WO2022173633A1 (en) | 2021-02-09 | 2022-02-02 | Plasma etching techniques |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024506618A JP2024506618A (ja) | 2024-02-14 |
| JP2024506618A5 true JP2024506618A5 (https=) | 2024-11-01 |
| JP7812042B2 JP7812042B2 (ja) | 2026-02-09 |
Family
ID=82704721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023547796A Active JP7812042B2 (ja) | 2021-02-09 | 2022-02-02 | プラズマエッチング技術 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11538690B2 (https=) |
| JP (1) | JP7812042B2 (https=) |
| KR (1) | KR20230138013A (https=) |
| CN (1) | CN117203741A (https=) |
| WO (1) | WO2022173633A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11908747B2 (en) * | 2020-10-30 | 2024-02-20 | Tokyo Electron Limited | Method for designing three dimensional metal lines for enhanced device performance |
| KR20230132361A (ko) | 2021-01-25 | 2023-09-15 | 램 리써치 코포레이션 | 열적 에칭에 의한 선택적인 실리콘 트리밍 |
| DE102021200627A1 (de) * | 2021-01-25 | 2022-08-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Verfahren zur Herstellung einer Solarzelle |
| US12272558B2 (en) * | 2022-05-09 | 2025-04-08 | Tokyo Electron Limited | Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification |
| KR20250053097A (ko) * | 2022-08-15 | 2025-04-21 | 램 리써치 코포레이션 | 첨가제와 함께 열 F2를 사용한 선택적 SiGe 에칭 |
| US12512327B2 (en) | 2022-09-15 | 2025-12-30 | Tokyo Electron Limited | Surface modification to achieve selective isotropic etch |
| JP2024051289A (ja) * | 2022-09-30 | 2024-04-11 | 芝浦メカトロニクス株式会社 | 半導体装置の製造方法、およびプラズマ処理装置 |
| US12315739B2 (en) | 2022-10-11 | 2025-05-27 | Applied Materials, Inc. | Isotropic silicon nitride removal |
| US12463046B2 (en) * | 2023-03-29 | 2025-11-04 | Applied Materials, Inc. | Silicon-and-germanium etching |
| US20240379372A1 (en) * | 2023-05-10 | 2024-11-14 | Tokyo Electron Limited | Method for ion-assisted self-limited conformal etch |
| US20240420962A1 (en) * | 2023-06-16 | 2024-12-19 | Applied Materials, Inc. | Methods of selectively etching silicon nitride |
| WO2025009407A1 (ja) * | 2023-07-05 | 2025-01-09 | 信越半導体株式会社 | ヘテロエピタキシャルウェーハおよびその製造方法 |
| CN120981897A (zh) * | 2023-07-18 | 2025-11-18 | 应用材料公司 | 选择性蚀刻氮化硅的方法 |
| US20250279282A1 (en) * | 2024-02-29 | 2025-09-04 | Tokyo Electron Limited | In situ removable blocking layer formation |
| US20260047369A1 (en) * | 2024-08-07 | 2026-02-12 | Applied Materials, Inc. | Uniform silicon oxide etching methods |
| US20260114197A1 (en) * | 2024-10-17 | 2026-04-23 | Applied Materials, Inc. | Processing methods to improve etched silicon-and-germanium-containing material surface properties |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8293608B2 (en) | 2008-02-08 | 2012-10-23 | Freescale Semiconductor, Inc. | Intermediate product for a multichannel FET and process for obtaining an intermediate product |
| JP6138653B2 (ja) | 2013-10-08 | 2017-05-31 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| US9236265B2 (en) * | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
| KR102323389B1 (ko) * | 2016-03-02 | 2021-11-05 | 도쿄엘렉트론가부시키가이샤 | 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭 |
| JP6619703B2 (ja) | 2016-06-28 | 2019-12-11 | 株式会社Ｓｃｒｅｅｎホールディングス | エッチング方法 |
| US10332986B2 (en) * | 2016-08-22 | 2019-06-25 | International Business Machines Corporation | Formation of inner spacer on nanosheet MOSFET |
| JP6812880B2 (ja) | 2017-03-29 | 2021-01-13 | 東京エレクトロン株式会社 | 基板処理方法及び記憶媒体。 |
| US10923356B2 (en) * | 2018-07-20 | 2021-02-16 | Tokyo Electron Limited | Gas phase etch with controllable etch selectivity of silicon-germanium alloys |
| JP7113711B2 (ja) | 2018-09-25 | 2022-08-05 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置、および記憶媒体 |
| WO2020172208A1 (en) | 2019-02-20 | 2020-08-27 | Tokyo Electron Limited | Method for selective etching at an interface between materials |
-
2021
- 2021-02-09 US US17/171,742 patent/US11538690B2/en active Active
-
2022
- 2022-02-02 KR KR1020237030075A patent/KR20230138013A/ko active Pending
- 2022-02-02 JP JP2023547796A patent/JP7812042B2/ja active Active
- 2022-02-02 CN CN202280018961.8A patent/CN117203741A/zh active Pending
- 2022-02-02 WO PCT/US2022/014996 patent/WO2022173633A1/en not_active Ceased
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