JP2003309105A5 - - Google Patents
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- Publication number
- JP2003309105A5 JP2003309105A5 JP2002112234A JP2002112234A JP2003309105A5 JP 2003309105 A5 JP2003309105 A5 JP 2003309105A5 JP 2002112234 A JP2002112234 A JP 2002112234A JP 2002112234 A JP2002112234 A JP 2002112234A JP 2003309105 A5 JP2003309105 A5 JP 2003309105A5
- Authority
- JP
- Japan
- Prior art keywords
- processing method
- gas
- plasma processing
- substrate
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000003672 processing method Methods 0.000 claims 14
- 239000007789 gas Substances 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 13
- 229910052731 fluorine Inorganic materials 0.000 claims 4
- 239000000460 chlorine Substances 0.000 claims 3
- 229910052801 chlorine Inorganic materials 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- 229910002601 GaN Inorganic materials 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 125000001309 chloro group Chemical group Cl* 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 239000005049 silicon tetrachloride Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002112234A JP4037154B2 (ja) | 2002-04-15 | 2002-04-15 | プラズマ処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002112234A JP4037154B2 (ja) | 2002-04-15 | 2002-04-15 | プラズマ処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003309105A JP2003309105A (ja) | 2003-10-31 |
| JP2003309105A5 true JP2003309105A5 (https=) | 2005-09-22 |
| JP4037154B2 JP4037154B2 (ja) | 2008-01-23 |
Family
ID=29394796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002112234A Expired - Fee Related JP4037154B2 (ja) | 2002-04-15 | 2002-04-15 | プラズマ処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4037154B2 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100720989B1 (ko) * | 2005-07-15 | 2007-05-28 | 주식회사 뉴파워 프라즈마 | 멀티 챔버 플라즈마 프로세스 시스템 |
| JP5087235B2 (ja) * | 2006-06-06 | 2012-12-05 | 新日本無線株式会社 | 窒化物半導体装置の製造方法 |
| JP5274649B2 (ja) * | 2009-03-26 | 2013-08-28 | 株式会社アルバック | 真空処理方法及び真空処理装置 |
| DE102011118364B3 (de) * | 2011-11-14 | 2012-12-20 | Technische Universität Braunschweig Carolo-Wilhelmina | Verfahren zum Ätzen und Halbleiterbauelement |
| JP6179937B2 (ja) * | 2013-05-16 | 2017-08-16 | サムコ株式会社 | プラズマエッチング装置及びプラズマエッチング方法 |
| KR20210047971A (ko) | 2013-08-09 | 2021-04-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 에피택셜 성장 이전에 기판 표면을 사전 세정하기 위한 방법 및 장치 |
| JP5832058B1 (ja) | 2013-12-20 | 2015-12-16 | 日本碍子株式会社 | 窒化ガリウム層を含む基板およびその製造方法 |
| JP6661283B2 (ja) * | 2015-05-14 | 2020-03-11 | 東京エレクトロン株式会社 | クリーニング方法及びプラズマ処理方法 |
| JP6845773B2 (ja) * | 2017-09-15 | 2021-03-24 | 株式会社日立ハイテク | プラズマ処理方法 |
| US11462414B2 (en) * | 2021-03-08 | 2022-10-04 | Tokyo Electron Limited | Atomic layer etching of metal oxides |
| JP7780351B2 (ja) * | 2022-02-07 | 2025-12-04 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS544073A (en) * | 1977-06-10 | 1979-01-12 | Matsushita Electric Ind Co Ltd | Cleaning method for semiconductor surface |
| JPS60117631A (ja) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | 化合物半導体のドライエッチング方法 |
| JPH02143418A (ja) * | 1988-11-25 | 1990-06-01 | Hitachi Ltd | 薄膜形成装置 |
| JP3036452B2 (ja) * | 1997-01-20 | 2000-04-24 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH10223616A (ja) * | 1997-02-06 | 1998-08-21 | Nippon Telegr & Teleph Corp <Ntt> | レジストパターン整形方法 |
| JPH1187365A (ja) * | 1997-09-08 | 1999-03-30 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JP4368963B2 (ja) * | 1999-03-03 | 2009-11-18 | 株式会社日立製作所 | 化合物半導体材料のエッチング方法 |
| EP1727189A2 (en) * | 1999-12-27 | 2006-11-29 | Matsushita Electric Industrial Co., Ltd. | Method for producing a semiconductor device |
| JP3630068B2 (ja) * | 2000-03-24 | 2005-03-16 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP2003282543A (ja) * | 2002-03-26 | 2003-10-03 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体のドライエッチング方法 |
-
2002
- 2002-04-15 JP JP2002112234A patent/JP4037154B2/ja not_active Expired - Fee Related
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