JP4037154B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP4037154B2
JP4037154B2 JP2002112234A JP2002112234A JP4037154B2 JP 4037154 B2 JP4037154 B2 JP 4037154B2 JP 2002112234 A JP2002112234 A JP 2002112234A JP 2002112234 A JP2002112234 A JP 2002112234A JP 4037154 B2 JP4037154 B2 JP 4037154B2
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Japan
Prior art keywords
gas
substrate
plasma processing
processing method
vacuum vessel
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Expired - Fee Related
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JP2002112234A
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English (en)
Japanese (ja)
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JP2003309105A5 (https=
JP2003309105A (ja
Inventor
光央 齋藤
忠司 木村
義人 池田
智洋 奥村
陽一郎 矢代
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2002112234A priority Critical patent/JP4037154B2/ja
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Publication of JP2003309105A5 publication Critical patent/JP2003309105A5/ja
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JP2002112234A 2002-04-15 2002-04-15 プラズマ処理方法 Expired - Fee Related JP4037154B2 (ja)

Priority Applications (1)

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JP2002112234A JP4037154B2 (ja) 2002-04-15 2002-04-15 プラズマ処理方法

Applications Claiming Priority (1)

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JP2002112234A JP4037154B2 (ja) 2002-04-15 2002-04-15 プラズマ処理方法

Publications (3)

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JP2003309105A JP2003309105A (ja) 2003-10-31
JP2003309105A5 JP2003309105A5 (https=) 2005-09-22
JP4037154B2 true JP4037154B2 (ja) 2008-01-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230119605A (ko) * 2022-02-07 2023-08-16 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100720989B1 (ko) * 2005-07-15 2007-05-28 주식회사 뉴파워 프라즈마 멀티 챔버 플라즈마 프로세스 시스템
JP5087235B2 (ja) * 2006-06-06 2012-12-05 新日本無線株式会社 窒化物半導体装置の製造方法
JP5274649B2 (ja) * 2009-03-26 2013-08-28 株式会社アルバック 真空処理方法及び真空処理装置
DE102011118364B3 (de) * 2011-11-14 2012-12-20 Technische Universität Braunschweig Carolo-Wilhelmina Verfahren zum Ätzen und Halbleiterbauelement
JP6179937B2 (ja) * 2013-05-16 2017-08-16 サムコ株式会社 プラズマエッチング装置及びプラズマエッチング方法
KR20210047971A (ko) 2013-08-09 2021-04-30 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 성장 이전에 기판 표면을 사전 세정하기 위한 방법 및 장치
JP5832058B1 (ja) 2013-12-20 2015-12-16 日本碍子株式会社 窒化ガリウム層を含む基板およびその製造方法
JP6661283B2 (ja) * 2015-05-14 2020-03-11 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理方法
JP6845773B2 (ja) * 2017-09-15 2021-03-24 株式会社日立ハイテク プラズマ処理方法
US11462414B2 (en) * 2021-03-08 2022-10-04 Tokyo Electron Limited Atomic layer etching of metal oxides

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544073A (en) * 1977-06-10 1979-01-12 Matsushita Electric Ind Co Ltd Cleaning method for semiconductor surface
JPS60117631A (ja) * 1983-11-30 1985-06-25 Toshiba Corp 化合物半導体のドライエッチング方法
JPH02143418A (ja) * 1988-11-25 1990-06-01 Hitachi Ltd 薄膜形成装置
JP3036452B2 (ja) * 1997-01-20 2000-04-24 日本電気株式会社 半導体装置の製造方法
JPH10223616A (ja) * 1997-02-06 1998-08-21 Nippon Telegr & Teleph Corp <Ntt> レジストパターン整形方法
JPH1187365A (ja) * 1997-09-08 1999-03-30 Hitachi Ltd 半導体装置およびその製造方法
JP4368963B2 (ja) * 1999-03-03 2009-11-18 株式会社日立製作所 化合物半導体材料のエッチング方法
EP1727189A2 (en) * 1999-12-27 2006-11-29 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor device
JP3630068B2 (ja) * 2000-03-24 2005-03-16 松下電器産業株式会社 半導体装置の製造方法
JP2003282543A (ja) * 2002-03-26 2003-10-03 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体のドライエッチング方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230119605A (ko) * 2022-02-07 2023-08-16 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
KR102757719B1 (ko) 2022-02-07 2025-01-21 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치

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JP2003309105A (ja) 2003-10-31

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