JP2025517645A5 - - Google Patents
Info
- Publication number
- JP2025517645A5 JP2025517645A5 JP2024565297A JP2024565297A JP2025517645A5 JP 2025517645 A5 JP2025517645 A5 JP 2025517645A5 JP 2024565297 A JP2024565297 A JP 2024565297A JP 2024565297 A JP2024565297 A JP 2024565297A JP 2025517645 A5 JP2025517645 A5 JP 2025517645A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- containing layer
- layer
- germanium
- fluorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263339895P | 2022-05-09 | 2022-05-09 | |
| US63/339,895 | 2022-05-09 | ||
| US17/964,601 US12272558B2 (en) | 2022-05-09 | 2022-10-12 | Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification |
| US17/964,601 | 2022-10-12 | ||
| PCT/US2023/016397 WO2023219716A1 (en) | 2022-05-09 | 2023-03-27 | Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025517645A JP2025517645A (ja) | 2025-06-10 |
| JP2025517645A5 true JP2025517645A5 (https=) | 2026-03-12 |
Family
ID=88648255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024565297A Pending JP2025517645A (ja) | 2022-05-09 | 2023-03-27 | 新規な化学及び表面改質による、シリコン－ゲルマニウム合金ならびに誘電体を超えるシリコンの選択的及び等方性エッチング |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12272558B2 (https=) |
| JP (1) | JP2025517645A (https=) |
| KR (1) | KR20250008508A (https=) |
| TW (1) | TW202410199A (https=) |
| WO (1) | WO2023219716A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025128543A1 (en) * | 2023-12-15 | 2025-06-19 | Lam Research Corporation | Tunable selective lateral etch of silicon using radical species |
| WO2025250472A1 (en) * | 2024-05-27 | 2025-12-04 | Lam Research Corporation | Passivation for selective etching semiconductor materials |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7501349B2 (en) * | 2006-03-31 | 2009-03-10 | Tokyo Electron Limited | Sequential oxide removal using fluorine and hydrogen |
| US9117653B2 (en) * | 2012-10-24 | 2015-08-25 | The Regents Of The University Of California | Method for in-situ dry cleaning, passivation and functionalization of Ge semiconductor surfaces |
| JP6138653B2 (ja) | 2013-10-08 | 2017-05-31 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| KR20180014207A (ko) | 2015-06-26 | 2018-02-07 | 도쿄엘렉트론가부시키가이샤 | 기상 식각 시스템 및 방법 |
| KR102577628B1 (ko) * | 2016-01-05 | 2023-09-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 응용들을 위한 수평 게이트 올 어라운드 디바이스들을 위한 나노와이어들을 제조하기 위한 방법 |
| KR102323389B1 (ko) | 2016-03-02 | 2021-11-05 | 도쿄엘렉트론가부시키가이샤 | 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭 |
| US10923356B2 (en) * | 2018-07-20 | 2021-02-16 | Tokyo Electron Limited | Gas phase etch with controllable etch selectivity of silicon-germanium alloys |
| JP7113711B2 (ja) | 2018-09-25 | 2022-08-05 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置、および記憶媒体 |
| CN112789710B (zh) | 2018-10-03 | 2025-03-04 | 朗姆研究公司 | 纳米线的选择性蚀刻 |
| WO2020172208A1 (en) * | 2019-02-20 | 2020-08-27 | Tokyo Electron Limited | Method for selective etching at an interface between materials |
| US11424120B2 (en) * | 2021-01-22 | 2022-08-23 | Tokyo Electron Limited | Plasma etching techniques |
| US11482423B2 (en) * | 2021-01-28 | 2022-10-25 | Tokyo Electron Limited | Plasma etching techniques |
| US11538690B2 (en) * | 2021-02-09 | 2022-12-27 | Tokyo Electron Limited | Plasma etching techniques |
| US12002683B2 (en) * | 2022-04-05 | 2024-06-04 | Tokyo Electron Limited | Lateral etching of silicon |
| US12261053B2 (en) * | 2022-08-10 | 2025-03-25 | Tokyo Electron Limited | Substrate processing with selective etching |
| US12261054B2 (en) * | 2022-08-11 | 2025-03-25 | Tokyo Electron Limited | Substrate processing with material modification and removal |
| US12512327B2 (en) * | 2022-09-15 | 2025-12-30 | Tokyo Electron Limited | Surface modification to achieve selective isotropic etch |
-
2022
- 2022-10-12 US US17/964,601 patent/US12272558B2/en active Active
-
2023
- 2023-03-27 JP JP2024565297A patent/JP2025517645A/ja active Pending
- 2023-03-27 WO PCT/US2023/016397 patent/WO2023219716A1/en not_active Ceased
- 2023-03-27 KR KR1020247033748A patent/KR20250008508A/ko active Pending
- 2023-05-04 TW TW112116546A patent/TW202410199A/zh unknown
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