JPWO2025069863A5 - - Google Patents

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Publication number
JPWO2025069863A5
JPWO2025069863A5 JP2025548628A JP2025548628A JPWO2025069863A5 JP WO2025069863 A5 JPWO2025069863 A5 JP WO2025069863A5 JP 2025548628 A JP2025548628 A JP 2025548628A JP 2025548628 A JP2025548628 A JP 2025548628A JP WO2025069863 A5 JPWO2025069863 A5 JP WO2025069863A5
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JP
Japan
Prior art keywords
gas
silicon
substrate
film
etching method
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JP2025548628A
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English (en)
Japanese (ja)
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JPWO2025069863A1 (https=
JP7836946B2 (ja
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Priority claimed from PCT/JP2024/030506 external-priority patent/WO2025069863A1/ja
Publication of JPWO2025069863A1 publication Critical patent/JPWO2025069863A1/ja
Publication of JPWO2025069863A5 publication Critical patent/JPWO2025069863A5/ja
Application granted granted Critical
Publication of JP7836946B2 publication Critical patent/JP7836946B2/ja
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JP2025548628A 2023-09-28 2024-08-27 エッチング方法及びプラズマ処理装置 Active JP7836946B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023167773 2023-09-28
JP2023167773 2023-09-28
PCT/JP2024/030506 WO2025069863A1 (ja) 2023-09-28 2024-08-27 エッチング方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JPWO2025069863A1 JPWO2025069863A1 (https=) 2025-04-03
JPWO2025069863A5 true JPWO2025069863A5 (https=) 2026-03-10
JP7836946B2 JP7836946B2 (ja) 2026-03-27

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ID=95202499

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JP2025548628A Active JP7836946B2 (ja) 2023-09-28 2024-08-27 エッチング方法及びプラズマ処理装置

Country Status (4)

Country Link
JP (1) JP7836946B2 (https=)
CN (1) CN121890303A (https=)
TW (1) TW202529200A (https=)
WO (1) WO2025069863A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677177A (ja) * 1992-06-22 1994-03-18 Matsushita Electric Ind Co Ltd ドライエッチング法及びドライエッチング装置
US9659788B2 (en) 2015-08-31 2017-05-23 American Air Liquide, Inc. Nitrogen-containing compounds for etching semiconductor structures
CN108321211A (zh) 2017-01-16 2018-07-24 中芯国际集成电路制造(上海)有限公司 Tmbs半导体器件及其制作方法、电子装置
WO2021171458A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
WO2022230118A1 (ja) 2021-04-28 2022-11-03 東京エレクトロン株式会社 エッチング方法
JP7700221B2 (ja) 2021-05-07 2025-06-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR20230111394A (ko) 2022-01-18 2023-07-25 삼성전자주식회사 저온 식각용 공정 가스, 플라즈마 식각 장치, 및 이들을 이용한 반도체 소자의 제조 방법

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