CN121890303A - 蚀刻方法及等离子体处理装置 - Google Patents

蚀刻方法及等离子体处理装置

Info

Publication number
CN121890303A
CN121890303A CN202480059445.9A CN202480059445A CN121890303A CN 121890303 A CN121890303 A CN 121890303A CN 202480059445 A CN202480059445 A CN 202480059445A CN 121890303 A CN121890303 A CN 121890303A
Authority
CN
China
Prior art keywords
gas
silicon
substrate
etching method
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480059445.9A
Other languages
English (en)
Chinese (zh)
Inventor
石井晃博
后平拓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN121890303A publication Critical patent/CN121890303A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Drying Of Semiconductors (AREA)
CN202480059445.9A 2023-09-28 2024-08-27 蚀刻方法及等离子体处理装置 Pending CN121890303A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-167773 2023-09-28
JP2023167773 2023-09-28
PCT/JP2024/030506 WO2025069863A1 (ja) 2023-09-28 2024-08-27 エッチング方法及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
CN121890303A true CN121890303A (zh) 2026-04-17

Family

ID=95202499

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480059445.9A Pending CN121890303A (zh) 2023-09-28 2024-08-27 蚀刻方法及等离子体处理装置

Country Status (4)

Country Link
JP (1) JP7836946B2 (https=)
CN (1) CN121890303A (https=)
TW (1) TW202529200A (https=)
WO (1) WO2025069863A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677177A (ja) * 1992-06-22 1994-03-18 Matsushita Electric Ind Co Ltd ドライエッチング法及びドライエッチング装置
US9659788B2 (en) 2015-08-31 2017-05-23 American Air Liquide, Inc. Nitrogen-containing compounds for etching semiconductor structures
CN108321211A (zh) 2017-01-16 2018-07-24 中芯国际集成电路制造(上海)有限公司 Tmbs半导体器件及其制作方法、电子装置
WO2021171458A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
WO2022230118A1 (ja) 2021-04-28 2022-11-03 東京エレクトロン株式会社 エッチング方法
JP7700221B2 (ja) 2021-05-07 2025-06-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR20230111394A (ko) 2022-01-18 2023-07-25 삼성전자주식회사 저온 식각용 공정 가스, 플라즈마 식각 장치, 및 이들을 이용한 반도체 소자의 제조 방법

Also Published As

Publication number Publication date
JPWO2025069863A1 (https=) 2025-04-03
TW202529200A (zh) 2025-07-16
WO2025069863A1 (ja) 2025-04-03
JP7836946B2 (ja) 2026-03-27

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