JPWO2025069863A1 - - Google Patents

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Publication number
JPWO2025069863A1
JPWO2025069863A1 JP2025548628A JP2025548628A JPWO2025069863A1 JP WO2025069863 A1 JPWO2025069863 A1 JP WO2025069863A1 JP 2025548628 A JP2025548628 A JP 2025548628A JP 2025548628 A JP2025548628 A JP 2025548628A JP WO2025069863 A1 JPWO2025069863 A1 JP WO2025069863A1
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JP
Japan
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JP2025548628A
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Japanese (ja)
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JPWO2025069863A5 (https=
JP7836946B2 (ja
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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
JP2025548628A 2023-09-28 2024-08-27 エッチング方法及びプラズマ処理装置 Active JP7836946B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023167773 2023-09-28
JP2023167773 2023-09-28
PCT/JP2024/030506 WO2025069863A1 (ja) 2023-09-28 2024-08-27 エッチング方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JPWO2025069863A1 true JPWO2025069863A1 (https=) 2025-04-03
JPWO2025069863A5 JPWO2025069863A5 (https=) 2026-03-10
JP7836946B2 JP7836946B2 (ja) 2026-03-27

Family

ID=95202499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025548628A Active JP7836946B2 (ja) 2023-09-28 2024-08-27 エッチング方法及びプラズマ処理装置

Country Status (4)

Country Link
JP (1) JP7836946B2 (https=)
CN (1) CN121890303A (https=)
TW (1) TW202529200A (https=)
WO (1) WO2025069863A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677177A (ja) * 1992-06-22 1994-03-18 Matsushita Electric Ind Co Ltd ドライエッチング法及びドライエッチング装置
CN108321211A (zh) * 2017-01-16 2018-07-24 中芯国际集成电路制造(上海)有限公司 Tmbs半导体器件及其制作方法、电子装置
JP2018529225A (ja) * 2015-08-31 2018-10-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 半導体構造物をエッチングするための窒素含有化合物
WO2021171764A1 (ja) * 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
WO2022234647A1 (ja) * 2021-05-07 2022-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2023063526A (ja) * 2021-04-28 2023-05-09 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US20230230840A1 (en) * 2022-01-18 2023-07-20 Samsung Electronics Co., Ltd. Process gas for cryogenic etching, plasma etching apparatus, and method of fabricating semiconductor device using the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677177A (ja) * 1992-06-22 1994-03-18 Matsushita Electric Ind Co Ltd ドライエッチング法及びドライエッチング装置
JP2018529225A (ja) * 2015-08-31 2018-10-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 半導体構造物をエッチングするための窒素含有化合物
CN108321211A (zh) * 2017-01-16 2018-07-24 中芯国际集成电路制造(上海)有限公司 Tmbs半导体器件及其制作方法、电子装置
WO2021171764A1 (ja) * 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
JP2023063526A (ja) * 2021-04-28 2023-05-09 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2022234647A1 (ja) * 2021-05-07 2022-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20230230840A1 (en) * 2022-01-18 2023-07-20 Samsung Electronics Co., Ltd. Process gas for cryogenic etching, plasma etching apparatus, and method of fabricating semiconductor device using the same

Also Published As

Publication number Publication date
CN121890303A (zh) 2026-04-17
TW202529200A (zh) 2025-07-16
WO2025069863A1 (ja) 2025-04-03
JP7836946B2 (ja) 2026-03-27

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