JP7836946B2 - エッチング方法及びプラズマ処理装置 - Google Patents

エッチング方法及びプラズマ処理装置

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Publication number
JP7836946B2
JP7836946B2 JP2025548628A JP2025548628A JP7836946B2 JP 7836946 B2 JP7836946 B2 JP 7836946B2 JP 2025548628 A JP2025548628 A JP 2025548628A JP 2025548628 A JP2025548628 A JP 2025548628A JP 7836946 B2 JP7836946 B2 JP 7836946B2
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JP
Japan
Prior art keywords
gas
silicon
substrate
film
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2025548628A
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English (en)
Japanese (ja)
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JPWO2025069863A1 (https=
JPWO2025069863A5 (https=
Inventor
晃博 石井
拓 後平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2025069863A1 publication Critical patent/JPWO2025069863A1/ja
Publication of JPWO2025069863A5 publication Critical patent/JPWO2025069863A5/ja
Application granted granted Critical
Publication of JP7836946B2 publication Critical patent/JP7836946B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Drying Of Semiconductors (AREA)
JP2025548628A 2023-09-28 2024-08-27 エッチング方法及びプラズマ処理装置 Active JP7836946B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023167773 2023-09-28
JP2023167773 2023-09-28
PCT/JP2024/030506 WO2025069863A1 (ja) 2023-09-28 2024-08-27 エッチング方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JPWO2025069863A1 JPWO2025069863A1 (https=) 2025-04-03
JPWO2025069863A5 JPWO2025069863A5 (https=) 2026-03-10
JP7836946B2 true JP7836946B2 (ja) 2026-03-27

Family

ID=95202499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025548628A Active JP7836946B2 (ja) 2023-09-28 2024-08-27 エッチング方法及びプラズマ処理装置

Country Status (4)

Country Link
JP (1) JP7836946B2 (https=)
CN (1) CN121890303A (https=)
TW (1) TW202529200A (https=)
WO (1) WO2025069863A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108321211A (zh) 2017-01-16 2018-07-24 中芯国际集成电路制造(上海)有限公司 Tmbs半导体器件及其制作方法、电子装置
JP2018529225A (ja) 2015-08-31 2018-10-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 半導体構造物をエッチングするための窒素含有化合物
WO2021171764A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
WO2022234647A1 (ja) 2021-05-07 2022-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2023063526A (ja) 2021-04-28 2023-05-09 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US20230230840A1 (en) 2022-01-18 2023-07-20 Samsung Electronics Co., Ltd. Process gas for cryogenic etching, plasma etching apparatus, and method of fabricating semiconductor device using the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677177A (ja) * 1992-06-22 1994-03-18 Matsushita Electric Ind Co Ltd ドライエッチング法及びドライエッチング装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018529225A (ja) 2015-08-31 2018-10-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 半導体構造物をエッチングするための窒素含有化合物
CN108321211A (zh) 2017-01-16 2018-07-24 中芯国际集成电路制造(上海)有限公司 Tmbs半导体器件及其制作方法、电子装置
WO2021171764A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
JP2023063526A (ja) 2021-04-28 2023-05-09 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2022234647A1 (ja) 2021-05-07 2022-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20230230840A1 (en) 2022-01-18 2023-07-20 Samsung Electronics Co., Ltd. Process gas for cryogenic etching, plasma etching apparatus, and method of fabricating semiconductor device using the same

Also Published As

Publication number Publication date
JPWO2025069863A1 (https=) 2025-04-03
CN121890303A (zh) 2026-04-17
TW202529200A (zh) 2025-07-16
WO2025069863A1 (ja) 2025-04-03

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