KR20250008508A - 새로운 화학 및 표면 개질을 통한 규소-게르마늄 합금 및 유전체에 대한 규소의 선택적 등방성 에칭 - Google Patents

새로운 화학 및 표면 개질을 통한 규소-게르마늄 합금 및 유전체에 대한 규소의 선택적 등방성 에칭 Download PDF

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Publication number
KR20250008508A
KR20250008508A KR1020247033748A KR20247033748A KR20250008508A KR 20250008508 A KR20250008508 A KR 20250008508A KR 1020247033748 A KR1020247033748 A KR 1020247033748A KR 20247033748 A KR20247033748 A KR 20247033748A KR 20250008508 A KR20250008508 A KR 20250008508A
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South Korea
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plasma
layer
containing layer
fluorine
germanium
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Pending
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KR1020247033748A
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English (en)
Korean (ko)
Inventor
매튜 플라우그
조나단 홀린
숩하딥 칼
핑산 루안
하메드 하지바배이나자파바디
유-하오 차이
애란 모스덴
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도쿄엘렉트론가부시키가이샤
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Publication of KR20250008508A publication Critical patent/KR20250008508A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H01L21/3065—
    • H01L21/02505—
    • H01L21/02532—
    • H01L21/02664—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
KR1020247033748A 2022-05-09 2023-03-27 새로운 화학 및 표면 개질을 통한 규소-게르마늄 합금 및 유전체에 대한 규소의 선택적 등방성 에칭 Pending KR20250008508A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202263339895P 2022-05-09 2022-05-09
US63/339,895 2022-05-09
US17/964,601 US12272558B2 (en) 2022-05-09 2022-10-12 Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification
US17/964,601 2022-10-12
PCT/US2023/016397 WO2023219716A1 (en) 2022-05-09 2023-03-27 Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification

Publications (1)

Publication Number Publication Date
KR20250008508A true KR20250008508A (ko) 2025-01-14

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KR1020247033748A Pending KR20250008508A (ko) 2022-05-09 2023-03-27 새로운 화학 및 표면 개질을 통한 규소-게르마늄 합금 및 유전체에 대한 규소의 선택적 등방성 에칭

Country Status (5)

Country Link
US (1) US12272558B2 (https=)
JP (1) JP2025517645A (https=)
KR (1) KR20250008508A (https=)
TW (1) TW202410199A (https=)
WO (1) WO2023219716A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025128543A1 (en) * 2023-12-15 2025-06-19 Lam Research Corporation Tunable selective lateral etch of silicon using radical species
WO2025250472A1 (en) * 2024-05-27 2025-12-04 Lam Research Corporation Passivation for selective etching semiconductor materials

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501349B2 (en) * 2006-03-31 2009-03-10 Tokyo Electron Limited Sequential oxide removal using fluorine and hydrogen
US9117653B2 (en) * 2012-10-24 2015-08-25 The Regents Of The University Of California Method for in-situ dry cleaning, passivation and functionalization of Ge semiconductor surfaces
JP6138653B2 (ja) 2013-10-08 2017-05-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
KR20180014207A (ko) 2015-06-26 2018-02-07 도쿄엘렉트론가부시키가이샤 기상 식각 시스템 및 방법
KR102577628B1 (ko) * 2016-01-05 2023-09-13 어플라이드 머티어리얼스, 인코포레이티드 반도체 응용들을 위한 수평 게이트 올 어라운드 디바이스들을 위한 나노와이어들을 제조하기 위한 방법
KR102323389B1 (ko) 2016-03-02 2021-11-05 도쿄엘렉트론가부시키가이샤 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭
US10923356B2 (en) * 2018-07-20 2021-02-16 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of silicon-germanium alloys
JP7113711B2 (ja) 2018-09-25 2022-08-05 東京エレクトロン株式会社 エッチング方法、エッチング装置、および記憶媒体
CN112789710B (zh) 2018-10-03 2025-03-04 朗姆研究公司 纳米线的选择性蚀刻
WO2020172208A1 (en) * 2019-02-20 2020-08-27 Tokyo Electron Limited Method for selective etching at an interface between materials
US11424120B2 (en) * 2021-01-22 2022-08-23 Tokyo Electron Limited Plasma etching techniques
US11482423B2 (en) * 2021-01-28 2022-10-25 Tokyo Electron Limited Plasma etching techniques
US11538690B2 (en) * 2021-02-09 2022-12-27 Tokyo Electron Limited Plasma etching techniques
US12002683B2 (en) * 2022-04-05 2024-06-04 Tokyo Electron Limited Lateral etching of silicon
US12261053B2 (en) * 2022-08-10 2025-03-25 Tokyo Electron Limited Substrate processing with selective etching
US12261054B2 (en) * 2022-08-11 2025-03-25 Tokyo Electron Limited Substrate processing with material modification and removal
US12512327B2 (en) * 2022-09-15 2025-12-30 Tokyo Electron Limited Surface modification to achieve selective isotropic etch

Also Published As

Publication number Publication date
JP2025517645A (ja) 2025-06-10
TW202410199A (zh) 2024-03-01
US12272558B2 (en) 2025-04-08
WO2023219716A1 (en) 2023-11-16
US20230360921A1 (en) 2023-11-09

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