KR102799165B1 - 고도로 선택적인 실리콘 산화물/실리콘 질화물 에칭을 위한 에칭 가스 성분과 패시베이션 가스 성분의 독립적 제어 - Google Patents

고도로 선택적인 실리콘 산화물/실리콘 질화물 에칭을 위한 에칭 가스 성분과 패시베이션 가스 성분의 독립적 제어 Download PDF

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KR102799165B1
KR102799165B1 KR1020217034822A KR20217034822A KR102799165B1 KR 102799165 B1 KR102799165 B1 KR 102799165B1 KR 1020217034822 A KR1020217034822 A KR 1020217034822A KR 20217034822 A KR20217034822 A KR 20217034822A KR 102799165 B1 KR102799165 B1 KR 102799165B1
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gas
plasma
etching
silicon oxide
treatment method
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KR20210136143A (ko
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두 장
유-하오 차이
밍메이 왕
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H01L21/31144—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H01L21/02164—
    • H01L21/0217—
    • H01L21/31116—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

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  • Drying Of Semiconductors (AREA)
KR1020217034822A 2019-04-05 2020-03-24 고도로 선택적인 실리콘 산화물/실리콘 질화물 에칭을 위한 에칭 가스 성분과 패시베이션 가스 성분의 독립적 제어 Active KR102799165B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962830223P 2019-04-05 2019-04-05
US62/830,223 2019-04-05
PCT/US2020/024446 WO2020205335A1 (en) 2019-04-05 2020-03-24 Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etching

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Publication Number Publication Date
KR20210136143A KR20210136143A (ko) 2021-11-16
KR102799165B1 true KR102799165B1 (ko) 2025-04-21

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Country Link
US (1) US11024508B2 (https=)
JP (1) JP7545185B2 (https=)
KR (1) KR102799165B1 (https=)
CN (1) CN113632208B (https=)
TW (1) TWI874377B (https=)
WO (1) WO2020205335A1 (https=)

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WO2020167765A1 (en) * 2019-02-14 2020-08-20 Lam Research Corporation Selective etch using a sacrificial mask
TWI888525B (zh) * 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
EP4219405B1 (en) 2020-10-14 2025-12-31 LG Energy Solution, Ltd. METHOD FOR MANUFACTURING A HIGH-NICKEL POSITIVE ELECTRODE ACTIVE MATERIAL
US20230268192A1 (en) * 2021-06-15 2023-08-24 Lam Research Corporation In-situ hydrocarbon-based layer for non-conformal passivation of partially etched structures
KR20240100436A (ko) * 2021-11-16 2024-07-01 램 리써치 코포레이션 유기 클로라이드를 사용한 실리콘 에칭
CN114664653B (zh) * 2022-03-15 2025-04-11 浙江大学 一种氮化硅刻蚀方法
WO2024123556A1 (en) * 2022-12-07 2024-06-13 Lam Research Corporation Etch with sulfur based oxygen free passivant
KR20250162513A (ko) * 2023-03-17 2025-11-18 가부시키가이샤 코쿠사이 엘렉트릭 에칭 방법, 반도체 장치의 제조 방법, 처리 장치 및 프로그램
KR20250094305A (ko) * 2023-12-18 2025-06-25 주식회사 원익아이피에스 기판 처리 방법

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US20190019685A1 (en) 2016-05-20 2019-01-17 Tokyo Electron Limited Etching method

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Publication number Publication date
KR20210136143A (ko) 2021-11-16
JP7545185B2 (ja) 2024-09-04
CN113632208B (zh) 2025-11-18
WO2020205335A1 (en) 2020-10-08
TW202104659A (zh) 2021-02-01
CN113632208A (zh) 2021-11-09
US20200321218A1 (en) 2020-10-08
TWI874377B (zh) 2025-03-01
JP2022527552A (ja) 2022-06-02
US11024508B2 (en) 2021-06-01

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