TWI874377B - 電漿處理方法 - Google Patents

電漿處理方法 Download PDF

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Publication number
TWI874377B
TWI874377B TW109110789A TW109110789A TWI874377B TW I874377 B TWI874377 B TW I874377B TW 109110789 A TW109110789 A TW 109110789A TW 109110789 A TW109110789 A TW 109110789A TW I874377 B TWI874377 B TW I874377B
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TW
Taiwan
Prior art keywords
gas
plasma
excited
silicon oxide
treatment method
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TW109110789A
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English (en)
Chinese (zh)
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TW202104659A (zh
Inventor
張度
蔡宇浩
明梅 王
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202104659A publication Critical patent/TW202104659A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

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  • Drying Of Semiconductors (AREA)
TW109110789A 2019-04-05 2020-03-30 電漿處理方法 TWI874377B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962830223P 2019-04-05 2019-04-05
US62/830,223 2019-04-05

Publications (2)

Publication Number Publication Date
TW202104659A TW202104659A (zh) 2021-02-01
TWI874377B true TWI874377B (zh) 2025-03-01

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ID=72661996

Family Applications (1)

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TW109110789A TWI874377B (zh) 2019-04-05 2020-03-30 電漿處理方法

Country Status (6)

Country Link
US (1) US11024508B2 (https=)
JP (1) JP7545185B2 (https=)
KR (1) KR102799165B1 (https=)
CN (1) CN113632208B (https=)
TW (1) TWI874377B (https=)
WO (1) WO2020205335A1 (https=)

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TWI888525B (zh) * 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
EP4219405B1 (en) 2020-10-14 2025-12-31 LG Energy Solution, Ltd. METHOD FOR MANUFACTURING A HIGH-NICKEL POSITIVE ELECTRODE ACTIVE MATERIAL
US20230268192A1 (en) * 2021-06-15 2023-08-24 Lam Research Corporation In-situ hydrocarbon-based layer for non-conformal passivation of partially etched structures
KR20240100436A (ko) * 2021-11-16 2024-07-01 램 리써치 코포레이션 유기 클로라이드를 사용한 실리콘 에칭
CN114664653B (zh) * 2022-03-15 2025-04-11 浙江大学 一种氮化硅刻蚀方法
WO2024123556A1 (en) * 2022-12-07 2024-06-13 Lam Research Corporation Etch with sulfur based oxygen free passivant
KR20250162513A (ko) * 2023-03-17 2025-11-18 가부시키가이샤 코쿠사이 엘렉트릭 에칭 방법, 반도체 장치의 제조 방법, 처리 장치 및 프로그램
KR20250094305A (ko) * 2023-12-18 2025-06-25 주식회사 원익아이피에스 기판 처리 방법

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JPS61142744A (ja) * 1984-12-17 1986-06-30 Sony Corp エツチングガス及びこれを用いたエツチング方法
JPH0982688A (ja) * 1995-09-19 1997-03-28 Sony Corp ドライエッチング方法
WO2005024957A1 (ja) * 2003-08-29 2005-03-17 Fujitsu Limited 半導体装置とその製造方法
TW201417144A (zh) * 2012-09-05 2014-05-01 三星電子股份有限公司 在導體圖案間之間隙中包含支撐圖案的半導體裝置及其製造方法

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US5286344A (en) 1992-06-15 1994-02-15 Micron Technology, Inc. Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride
JP3252518B2 (ja) * 1993-03-19 2002-02-04 ソニー株式会社 ドライエッチング方法
JPH07106308A (ja) * 1993-10-08 1995-04-21 Sony Corp ドライエッチング方法
US5505816A (en) * 1993-12-16 1996-04-09 International Business Machines Corporation Etching of silicon dioxide selectively to silicon nitride and polysilicon
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US10446407B2 (en) * 2017-01-18 2019-10-15 Tokyo Electron Limited Method of preferential silicon nitride etching using sulfur hexafluoride
US10276398B2 (en) * 2017-08-02 2019-04-30 Lam Research Corporation High aspect ratio selective lateral etch using cyclic passivation and etching
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Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JPS61142744A (ja) * 1984-12-17 1986-06-30 Sony Corp エツチングガス及びこれを用いたエツチング方法
JPH0982688A (ja) * 1995-09-19 1997-03-28 Sony Corp ドライエッチング方法
WO2005024957A1 (ja) * 2003-08-29 2005-03-17 Fujitsu Limited 半導体装置とその製造方法
TW201417144A (zh) * 2012-09-05 2014-05-01 三星電子股份有限公司 在導體圖案間之間隙中包含支撐圖案的半導體裝置及其製造方法

Also Published As

Publication number Publication date
KR20210136143A (ko) 2021-11-16
JP7545185B2 (ja) 2024-09-04
CN113632208B (zh) 2025-11-18
WO2020205335A1 (en) 2020-10-08
KR102799165B1 (ko) 2025-04-21
TW202104659A (zh) 2021-02-01
CN113632208A (zh) 2021-11-09
US20200321218A1 (en) 2020-10-08
JP2022527552A (ja) 2022-06-02
US11024508B2 (en) 2021-06-01

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