CN113632208B - 用于高度选择性氧化硅/氮化硅蚀刻的蚀刻和钝化气体组分的独立控制 - Google Patents
用于高度选择性氧化硅/氮化硅蚀刻的蚀刻和钝化气体组分的独立控制Info
- Publication number
- CN113632208B CN113632208B CN202080024315.3A CN202080024315A CN113632208B CN 113632208 B CN113632208 B CN 113632208B CN 202080024315 A CN202080024315 A CN 202080024315A CN 113632208 B CN113632208 B CN 113632208B
- Authority
- CN
- China
- Prior art keywords
- gas
- plasma
- excited
- substrate
- passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
- H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/694—Inorganic materials composed of nitrides
- H10P14/6943—Inorganic materials composed of nitrides containing silicon
- H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962830223P | 2019-04-05 | 2019-04-05 | |
| US62/830,223 | 2019-04-05 | ||
| PCT/US2020/024446 WO2020205335A1 (en) | 2019-04-05 | 2020-03-24 | Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113632208A CN113632208A (zh) | 2021-11-09 |
| CN113632208B true CN113632208B (zh) | 2025-11-18 |
Family
ID=72661996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080024315.3A Active CN113632208B (zh) | 2019-04-05 | 2020-03-24 | 用于高度选择性氧化硅/氮化硅蚀刻的蚀刻和钝化气体组分的独立控制 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11024508B2 (https=) |
| JP (1) | JP7545185B2 (https=) |
| KR (1) | KR102799165B1 (https=) |
| CN (1) | CN113632208B (https=) |
| TW (1) | TWI874377B (https=) |
| WO (1) | WO2020205335A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020167765A1 (en) * | 2019-02-14 | 2020-08-20 | Lam Research Corporation | Selective etch using a sacrificial mask |
| TWI888525B (zh) * | 2020-04-08 | 2025-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
| EP4219405B1 (en) | 2020-10-14 | 2025-12-31 | LG Energy Solution, Ltd. | METHOD FOR MANUFACTURING A HIGH-NICKEL POSITIVE ELECTRODE ACTIVE MATERIAL |
| US20230268192A1 (en) * | 2021-06-15 | 2023-08-24 | Lam Research Corporation | In-situ hydrocarbon-based layer for non-conformal passivation of partially etched structures |
| KR20240100436A (ko) * | 2021-11-16 | 2024-07-01 | 램 리써치 코포레이션 | 유기 클로라이드를 사용한 실리콘 에칭 |
| CN114664653B (zh) * | 2022-03-15 | 2025-04-11 | 浙江大学 | 一种氮化硅刻蚀方法 |
| WO2024123556A1 (en) * | 2022-12-07 | 2024-06-13 | Lam Research Corporation | Etch with sulfur based oxygen free passivant |
| KR20250162513A (ko) * | 2023-03-17 | 2025-11-18 | 가부시키가이샤 코쿠사이 엘렉트릭 | 에칭 방법, 반도체 장치의 제조 방법, 처리 장치 및 프로그램 |
| KR20250094305A (ko) * | 2023-12-18 | 2025-06-25 | 주식회사 원익아이피에스 | 기판 처리 방법 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0982688A (ja) * | 1995-09-19 | 1997-03-28 | Sony Corp | ドライエッチング方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4324611A (en) | 1980-06-26 | 1982-04-13 | Branson International Plasma Corporation | Process and gas mixture for etching silicon dioxide and silicon nitride |
| JPH07118474B2 (ja) * | 1984-12-17 | 1995-12-18 | ソニー株式会社 | エツチングガス及びこれを用いたエツチング方法 |
| US5286344A (en) | 1992-06-15 | 1994-02-15 | Micron Technology, Inc. | Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride |
| JP3252518B2 (ja) * | 1993-03-19 | 2002-02-04 | ソニー株式会社 | ドライエッチング方法 |
| JPH07106308A (ja) * | 1993-10-08 | 1995-04-21 | Sony Corp | ドライエッチング方法 |
| US5505816A (en) * | 1993-12-16 | 1996-04-09 | International Business Machines Corporation | Etching of silicon dioxide selectively to silicon nitride and polysilicon |
| US6277720B1 (en) * | 1997-06-30 | 2001-08-21 | Texas Instruments Incorporated | Silicon nitride dopant diffusion barrier in integrated circuits |
| JP2985841B2 (ja) * | 1997-08-22 | 1999-12-06 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6387819B1 (en) * | 1998-04-29 | 2002-05-14 | Applied Materials, Inc. | Method for etching low K dielectric layers |
| JP2000040691A (ja) * | 1998-07-21 | 2000-02-08 | Oki Electric Ind Co Ltd | 半導体装置製造方法 |
| US6803318B1 (en) * | 2000-09-14 | 2004-10-12 | Cypress Semiconductor Corp. | Method of forming self aligned contacts |
| WO2005024957A1 (ja) * | 2003-08-29 | 2005-03-17 | Fujitsu Limited | 半導体装置とその製造方法 |
| US7393788B2 (en) * | 2006-02-10 | 2008-07-01 | Cook Julie A | Method and system for selectively etching a dielectric material relative to silicon |
| KR102002815B1 (ko) * | 2012-09-05 | 2019-07-23 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
| JP2014209515A (ja) * | 2013-04-16 | 2014-11-06 | 東京エレクトロン株式会社 | エッチング方法 |
| TW201525173A (zh) * | 2013-12-09 | 2015-07-01 | 應用材料股份有限公司 | 選擇性層沉積之方法 |
| JP6059165B2 (ja) * | 2014-02-19 | 2017-01-11 | 東京エレクトロン株式会社 | エッチング方法、及びプラズマ処理装置 |
| US9412605B2 (en) * | 2014-08-07 | 2016-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of removing oxide on semiconductor surface by layer of sulfur |
| JP6315809B2 (ja) * | 2014-08-28 | 2018-04-25 | 東京エレクトロン株式会社 | エッチング方法 |
| US9633867B2 (en) * | 2015-01-05 | 2017-04-25 | Lam Research Corporation | Method and apparatus for anisotropic tungsten etching |
| JP2016157793A (ja) * | 2015-02-24 | 2016-09-01 | 東京エレクトロン株式会社 | エッチング方法 |
| US9852923B2 (en) * | 2015-04-02 | 2017-12-26 | Applied Materials, Inc. | Mask etch for patterning |
| US9870899B2 (en) | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
| JP6592400B2 (ja) | 2016-05-19 | 2019-10-16 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6606464B2 (ja) | 2016-05-20 | 2019-11-13 | 東京エレクトロン株式会社 | エッチング方法 |
| US10629449B2 (en) * | 2016-10-13 | 2020-04-21 | Kanto Denka Kogyo Co., Ltd. | Gas composition for dry etching and dry etching method |
| US10446407B2 (en) * | 2017-01-18 | 2019-10-15 | Tokyo Electron Limited | Method of preferential silicon nitride etching using sulfur hexafluoride |
| US10276398B2 (en) * | 2017-08-02 | 2019-04-30 | Lam Research Corporation | High aspect ratio selective lateral etch using cyclic passivation and etching |
| US11075084B2 (en) * | 2017-08-31 | 2021-07-27 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Chemistries for etching multi-stacked layers |
-
2020
- 2020-03-24 CN CN202080024315.3A patent/CN113632208B/zh active Active
- 2020-03-24 WO PCT/US2020/024446 patent/WO2020205335A1/en not_active Ceased
- 2020-03-24 KR KR1020217034822A patent/KR102799165B1/ko active Active
- 2020-03-24 US US16/828,308 patent/US11024508B2/en active Active
- 2020-03-24 JP JP2021559229A patent/JP7545185B2/ja active Active
- 2020-03-30 TW TW109110789A patent/TWI874377B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0982688A (ja) * | 1995-09-19 | 1997-03-28 | Sony Corp | ドライエッチング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210136143A (ko) | 2021-11-16 |
| JP7545185B2 (ja) | 2024-09-04 |
| WO2020205335A1 (en) | 2020-10-08 |
| KR102799165B1 (ko) | 2025-04-21 |
| TW202104659A (zh) | 2021-02-01 |
| CN113632208A (zh) | 2021-11-09 |
| US20200321218A1 (en) | 2020-10-08 |
| TWI874377B (zh) | 2025-03-01 |
| JP2022527552A (ja) | 2022-06-02 |
| US11024508B2 (en) | 2021-06-01 |
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