JP7545185B2 - 高度に選択的な酸化ケイ素／窒化ケイ素エッチングのためのエッチング成分及び不動態化ガス成分の独立した制御 - Google Patents

高度に選択的な酸化ケイ素／窒化ケイ素エッチングのためのエッチング成分及び不動態化ガス成分の独立した制御 Download PDF

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JP7545185B2
JP7545185B2 JP2021559229A JP2021559229A JP7545185B2 JP 7545185 B2 JP7545185 B2 JP 7545185B2 JP 2021559229 A JP2021559229 A JP 2021559229A JP 2021559229 A JP2021559229 A JP 2021559229A JP 7545185 B2 JP7545185 B2 JP 7545185B2
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gas
plasma
silicon oxide
silicon nitride
exposing
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JP2022527552A5 (https=
JP2022527552A (ja
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チャン，ドゥ
ツァイ，ユ－ハオ
ワン，ミンメイ
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

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JP2021559229A 2019-04-05 2020-03-24 高度に選択的な酸化ケイ素／窒化ケイ素エッチングのためのエッチング成分及び不動態化ガス成分の独立した制御 Active JP7545185B2 (ja)

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US201962830223P 2019-04-05 2019-04-05
US62/830,223 2019-04-05
PCT/US2020/024446 WO2020205335A1 (en) 2019-04-05 2020-03-24 Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etching

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JP2022527552A JP2022527552A (ja) 2022-06-02
JP2022527552A5 JP2022527552A5 (https=) 2023-01-26
JP7545185B2 true JP7545185B2 (ja) 2024-09-04

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US (1) US11024508B2 (https=)
JP (1) JP7545185B2 (https=)
KR (1) KR102799165B1 (https=)
CN (1) CN113632208B (https=)
TW (1) TWI874377B (https=)
WO (1) WO2020205335A1 (https=)

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TWI888525B (zh) * 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
EP4219405B1 (en) 2020-10-14 2025-12-31 LG Energy Solution, Ltd. METHOD FOR MANUFACTURING A HIGH-NICKEL POSITIVE ELECTRODE ACTIVE MATERIAL
US20230268192A1 (en) * 2021-06-15 2023-08-24 Lam Research Corporation In-situ hydrocarbon-based layer for non-conformal passivation of partially etched structures
KR20240100436A (ko) * 2021-11-16 2024-07-01 램 리써치 코포레이션 유기 클로라이드를 사용한 실리콘 에칭
CN114664653B (zh) * 2022-03-15 2025-04-11 浙江大学 一种氮化硅刻蚀方法
WO2024123556A1 (en) * 2022-12-07 2024-06-13 Lam Research Corporation Etch with sulfur based oxygen free passivant
KR20250162513A (ko) * 2023-03-17 2025-11-18 가부시키가이샤 코쿠사이 엘렉트릭 에칭 방법, 반도체 장치의 제조 방법, 처리 장치 및 프로그램
KR20250094305A (ko) * 2023-12-18 2025-06-25 주식회사 원익아이피에스 기판 처리 방법

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KR20210136143A (ko) 2021-11-16
CN113632208B (zh) 2025-11-18
WO2020205335A1 (en) 2020-10-08
KR102799165B1 (ko) 2025-04-21
TW202104659A (zh) 2021-02-01
CN113632208A (zh) 2021-11-09
US20200321218A1 (en) 2020-10-08
TWI874377B (zh) 2025-03-01
JP2022527552A (ja) 2022-06-02
US11024508B2 (en) 2021-06-01

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