JP2021524659A - 空間変動型ウェハバイアス電力システム - Google Patents
空間変動型ウェハバイアス電力システム Download PDFInfo
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- JP2021524659A JP2021524659A JP2021504454A JP2021504454A JP2021524659A JP 2021524659 A JP2021524659 A JP 2021524659A JP 2021504454 A JP2021504454 A JP 2021504454A JP 2021504454 A JP2021504454 A JP 2021504454A JP 2021524659 A JP2021524659 A JP 2021524659A
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- 238000011084 recovery Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 26
- 230000005684 electric field Effects 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 12
- 239000003989 dielectric material Substances 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 abstract description 14
- 235000012431 wafers Nutrition 0.000 description 106
- 239000003990 capacitor Substances 0.000 description 58
- 238000003860 storage Methods 0.000 description 12
- 238000004804 winding Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 7
- 238000004891 communication Methods 0.000 description 5
- 230000008929 regeneration Effects 0.000 description 5
- 238000011069 regeneration method Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000007792 addition Methods 0.000 description 3
- 238000004422 calculation algorithm Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000003936 working memory Effects 0.000 description 3
- 235000014676 Phragmites communis Nutrition 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- 241000219793 Trifolium Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000010267 cellular communication Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20009—Modifications to facilitate cooling, ventilating, or heating using a gaseous coolant in electronic enclosures
- H05K7/20136—Forced ventilation, e.g. by fans
- H05K7/20154—Heat dissipaters coupled to components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20009—Modifications to facilitate cooling, ventilating, or heating using a gaseous coolant in electronic enclosures
- H05K7/20136—Forced ventilation, e.g. by fans
- H05K7/20172—Fan mounting or fan specifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20218—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
- H05K7/20254—Cold plates transferring heat from heat source to coolant
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
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- H05K7/20272—Accessories for moving fluid, for expanding fluid, for connecting fluid conduits, for distributing fluid, for removing gas or for preventing leakage, e.g. pumps, tanks or manifolds
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20218—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
- H05K7/20281—Thermal management, e.g. liquid flow control
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
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- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/20509—Multiple-component heat spreaders; Multi-component heat-conducting support plates; Multi-component non-closed heat-conducting structures
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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- H02M1/0064—Magnetic structures combining different functions, e.g. storage, filtering or transformation
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- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
Description
本出願は、2018年7月27日に出願された、「ナノ秒パルサーシステム(NANOSECOND PULSER SYSTEM)」という名称の米国仮特許出願第62/711,464号の優先権を主張するものであり、この仮特許出願の全体が参照により本明細書に組み込まれる。
本出願は、2018年7月27日に出願された、「ナノ秒パルサー熱管理(NANOSECOND PULSER THERMAL MANAGEMENT)」という名称の米国仮特許出願第62/711,334号の優先権を主張するものであり、この仮特許出願の全体が参照により本明細書に組み込まれる。
本出願は、2018年7月27日に出願された、「ナノ秒パルサーパルス発生(NANOSECOND PULSER PULSE GENERATION)」という名称の米国仮特許出願第62/711,457号の優先権を主張するものであり、この仮特許出願の全体が参照により本明細書に組み込まれる。
本出願は、2018年7月27日に出願された、「ナノ秒パルサーADCシステム(NANOSECOND PULSER ADC SYSTEM)」という名称の米国仮特許出願第62/711,347号の優先権を主張するものであり、この仮特許出願の全体が参照により本明細書に組み込まれる。
本出願は、2018年7月27日に出願された、「エッジリングパワーシステム(EDGE RING POWER SYSTEM)」という名称の米国仮特許出願第62/711,467号の優先権を主張するものであり、この仮特許出願の全体が参照により本明細書に組み込まれる。
本出願は、2018年7月27日に出願された、「ナノ秒パルサーバイアス補償(NANOSECOND PULSER BIAS COMPENSATION)」という名称の米国仮特許出願第62/711,406号の優先権を主張するものであり、この仮特許出願の全体が参照により本明細書に組み込まれる。
本出願は、2018年7月27日に出願された、「ナノ秒パルサー制御モジュール(NANOSECOND PULSER CONTROL MODULE)」という名称の米国仮特許出願第62/711,468号の優先権を主張するものであり、この仮特許出願の全体が参照により本明細書に組み込まれる。
本出願は、2018年8月10日に出願された、「RFプラズマ反応器の為のプラズマシース制御(PLASMA SHEATH CONTROL FOR RF PLASMA REACTORS)」という名称の米国仮特許出願第62/711,523号の優先権を主張するものであり、この仮特許出願の全体が参照により本明細書に組み込まれる。
本出願は、2019年1月1日に出願された、「プラズマ制御用途向けのソース及びシンク能力を備えた効率的ナノ秒パルサー(EFFICIENT NANOSECOND PULSER WITH SOURCE AND SINK CAPABILITY FOR PLASMA CONTROL APPLICATIONS)」という名称の米国仮特許出願第62/789,523号の優先権を主張するものであり、この仮特許出願の全体が参照により本明細書に組み込まれる。
本出願は、2019年1月1日に出願された、「ナノ秒パルサー回路における効率的なエネルギー回収(EFFICIENT ENERGY RECOVERY IN A NANOSECOND PULSER CIRCUIT)」という名称の米国仮特許出願第62/789,526号の優先権を主張するものであり、この仮特許出願の全体が参照により本明細書に組み込まれる。
本出願は、2019年7月26日に出願された、「ナノ秒パルサーバイアス補償(NANOSECOND PULSER BIAS COMPENSATION)」という名称の米国特許出願第16/523,840号の優先権を主張すると共に、その一部継続出願であり、この仮特許出願の全体が参照により本明細書に組み込まれる。
101 パルサー・トランス段
102 抵抗出力段
103 リード段
104 DCバイアス補償回路
106 負荷段
305、525 エネルギー回収回路
310、330 ダイオード
315、340 インダクタ
400、500 ウェハバイアス電力システム
405 ウェハ
410 ウェハプラットフォーム
415 第1の電極
420 第2の電極
425 第1の高電圧パルサー
430 第2の高電圧パルサー
505 配線基板
510 バイアス補償回路
525 エネルギー回収回路
535 プラズマチャンバ
600、700、800 ウェハバイアスシステム
610 第1の抵抗出力段
615 第1のバイアスコンデンサ
620 第2の抵抗出力段
625 第2のバイアスコンデンサ
630 漂遊結合キャパシタンス
705、805 高電圧パルサー
710 第1の二次巻線
715 第2の二次巻線
810 分圧器
900 計算システム
925 ストレージデバイス
930 通信サブシステム
935 ワーキングメモリ
C5 スナバコンデンサ
D2 フリーホイールダイオード
D4 スナバダイオード
S1 ソリッドステートスイッチ
R3 スナバ抵抗器
〔付記1〕
プラズマ負荷を有する電力システムであって、
約1kVを超える第1の電圧、約1μs未満の第1のパルス幅、約20kHzを超える第1のパルス繰返し周波数を有する第1の複数のパルスを出力する第1の高電圧パルサーと、
約1kVを超える第2の電圧、約1μs未満の第2のパルス幅、約20kHzを超える第2のパルス繰返し周波数を有する第2の複数のパルスを出力する第2の高電圧パルサーと、
チャンバと、
前記チャンバ内に配置され、前記第1の高電圧パルサーに電気的に結合された第1の電極と、
前記第1の電極と隣接して前記チャンバ内に配置され、前記第2の高電圧パルサーと電気的に結合された第2の電極と、
を備えた電力システム。
〔付記2〕
前記チャンバが、ウェハと、10pF〜1μFのキャパシタンスで前記第1の電極及び前記第2の電極と容量結合されたプラズマとのうち何れか一方又は両方を含む、付記1に記載のシステム。
〔付記3〕
前記ウェハの表面に亘る電界が25%以内で均一である、付記1に記載のシステム。
〔付記4〕
前記第1の電極と前記ウェハの対応する部分との間の結合キャパシタンスが100pFを超え、前記第2の電極と前記ウェハの対応する部分との間のキャパシタンスが100pFを超える、付記1に記載のシステム。
〔付記5〕
前記チャンバが、ウェハ上に加速されるイオンのプラズマを含む、付記1に記載のシステム。
〔付記6〕
前記第1の高電圧パルサーが約1kVを超える前記第1の電極上の電極電圧を生成し、前記第2の高電圧パルサーが約1kVを超える前記第2の電極上の電極電圧を生成する、付記1に記載のシステム。
〔付記7〕
前記第2の電圧に対する前記第1の電圧の比が2対1未満である、又は、前記第1の電圧に対する前記第2の電圧の比が2対1未満である、付記1に記載のシステム。
〔付記8〕
前記第1の電極と前記第2の電極のうち何れか一方又は両方が軸対称である、付記1に記載のシステム。
〔付記9〕
前記第1の電極が第1の平面表面を有し、前記第2の電極が第2の平面表面を有し、前記第2の平面表面が、前記第1の平面表面と前記第2の平面表面との合計の25%となっている、付記1に記載のシステム。
〔付記10〕
前記第1の高電圧パルサー及び前記第2の高電圧パルサーの両方が抵抗出力段を備えている、付記1に記載のシステム。
〔付記11〕
前記第1の高電圧パルサーと前記第2の高電圧パルサーの両方がエネルギー回収回路を備えている、付記1に記載のシステム。
〔付記12〕
前記第1の複数のパルスのパラメータが、前記第2の複数のパルスのパラメータとは独立して制御される、付記1に記載のシステム。
〔付記13〕
前記第1のパルス繰返し周波数と前記第2のパルス繰返し周波数の位相が互いに一致している、付記1に記載のシステム。
〔付記14〕
前記第1の電極と前記第2の電極の間の結合キャパシタンスが約10nF未満である、付記1に記載のシステム。
〔付記15〕
前記第1の電極が、
円板形状と、
中心軸と、
外径と、を含み、
前記第2の電極が、
中心開口部を有する円板形状を含み、前記第1の電極が前記中心開口部内に配置され、
更に、前記第1の電極の前記中心軸と整列した中心軸と、
開口直径と、
外径を含む、付記1に記載のシステム。
〔付記16〕
システムであって、
ウェハプラットフォームと、
第1の電極とを備え、前記第1の電極が、
円板形状と、
中心軸と、
外径と、を含み、
更に、第2の電極を備え、前記第2の電極が、
中心開口部を有する円板形状を含み、前記第1の電極が前記中心開口部内に配置されており、
更に、前記第1の電極の前記中心軸と整列した中心軸と、
開口直径と、
外径と、を含み、
更に、前記第1の電極と電気的に結合され、10kHzを超えるパルス繰返し速度で5kVを超えるパルスを生成する第1の高電圧パルサーと、
前記第2の電極と電気的に結合され、10kHzを超えるパルス繰返し速度で5kVを超えるパルスを生成する第2の高電圧パルサーと、
を備えたシステム。
〔付記17〕
前記ウェハプラットフォームが、前記第2電極の外径と実質的に類似した外径を有する、付記16に記載のシステム。
〔付記18〕
前記第2の高電圧パルサーが、前記第1の高電圧パルサーによって供給されるパルスの振幅の分数である振幅を有するパルスを供給する、付記16に記載のシステム。
〔付記19〕
前記第2の高電圧パルサーが、前記第1の高電圧パルサーによって供給されるパルスのパルス繰返し周波数の分数であるパルス繰返し周波数を有するパルスを供給する、付記16に記載のシステム。
〔付記20〕
前記第1の高電圧パルサーと前記第1の電極とに結合された第1の抵抗出力段と、前記第2の高電圧パルサーと前記第2の電極とに結合された第2の抵抗出力段を更に含む、付記16に記載のシステム。
〔付記21〕
前記第1の高電圧パルサーと前記第1の電極とに結合されたバイアス補償回路を更に含む、付記16に記載のシステム。
〔付記22〕
前記第1の電極と前記第2の電極との間に配置された絶縁材料のリングを更に含む、付記16に記載のシステム。
〔付記23〕
前記ウェハプラットフォームが誘電体材料又はセラミック材料を含む、付記16に記載のシステム。
〔付記24〕
方法であって、
プラズマチャンバ内の第1の電極に結合された第1の高電圧パルサーをパルシングし、前記第1の高電圧パルサーは、約1kVを超える第1の電圧で、約20kHzを超える第1のパルス繰返し周波数と、第1のパルス幅でパルシングし、
前記プラズマチャンバ内の第2の電極に結合された第2の高電圧パルサーをパルシングし、前記第2の高電圧パルサーは、約1kVを超える第2の電圧で、約20kHzを超える第2のパルス繰返し周波数と、第2のパルス幅でパルシングし、前記第1の電極と前記第2の電極はウェハの下に配置され、
前記プラズマチャンバ内で発生する物理現象に対応するパラメータを測定し、
前記第2の電圧、前記第2のパルス繰返し周波数、及び前記第2のパルサー幅のうち少なくとも1つを、測定されたパラメータに基づいて調整する、
ことを含む方法。
〔付記25〕
前記プラズマチャンバ内で発生する前記物理現象が、前記ウェハの表面に亘る電界の均一性に対応する、付記24に記載の方法。
〔付記26〕
前記プラズマチャンバ内で発生する前記物理現象が、前記ウェハの表面に亘るイオン電流の均一性に対応する、付記24に記載の方法。
〔付記27〕
前記パラメータが、前記第1の高電圧パルサーの抵抗器を流れる電流である、付記24に記載の方法。
Claims (27)
- プラズマ負荷を有する電力システムであって、
約1kVを超える第1の電圧、約1μs未満の第1のパルス幅、約20kHzを超える第1のパルス繰返し周波数を有する第1の複数のパルスを出力する第1の高電圧パルサーと、
約1kVを超える第2の電圧、約1μs未満の第2のパルス幅、約20kHzを超える第2のパルス繰返し周波数を有する第2の複数のパルスを出力する第2の高電圧パルサーと、
チャンバと、
前記チャンバ内に配置され、前記第1の高電圧パルサーに電気的に結合された第1の電極と、
前記第1の電極と隣接して前記チャンバ内に配置され、前記第2の高電圧パルサーと電気的に結合された第2の電極と、
を備えた電力システム。 - 前記チャンバが、ウェハと、10pF〜1μFのキャパシタンスで前記第1の電極及び前記第2の電極と容量結合されたプラズマとのうち何れか一方又は両方を含む、請求項1に記載のシステム。
- 前記ウェハの表面に亘る電界が25%以内で均一である、請求項1に記載のシステム。
- 前記第1の電極と前記ウェハの対応する部分との間の結合キャパシタンスが100pFを超え、前記第2の電極と前記ウェハの対応する部分との間のキャパシタンスが100pFを超える、請求項1に記載のシステム。
- 前記チャンバが、ウェハ上に加速されるイオンのプラズマを含む、請求項1に記載のシステム。
- 前記第1の高電圧パルサーが約1kVを超える前記第1の電極上の電極電圧を生成し、前記第2の高電圧パルサーが約1kVを超える前記第2の電極上の電極電圧を生成する、請求項1に記載のシステム。
- 前記第2の電圧に対する前記第1の電圧の比が2対1未満である、又は、前記第1の電圧に対する前記第2の電圧の比が2対1未満である、請求項1に記載のシステム。
- 前記第1の電極と前記第2の電極のうち何れか一方又は両方が軸対称である、請求項1に記載のシステム。
- 前記第1の電極が第1の平面表面を有し、前記第2の電極が第2の平面表面を有し、前記第2の平面表面が、前記第1の平面表面と前記第2の平面表面との合計の25%となっている、請求項1に記載のシステム。
- 前記第1の高電圧パルサー及び前記第2の高電圧パルサーの両方が抵抗出力段を備えている、請求項1に記載のシステム。
- 前記第1の高電圧パルサーと前記第2の高電圧パルサーの両方がエネルギー回収回路を備えている、請求項1に記載のシステム。
- 前記第1の複数のパルスのパラメータが、前記第2の複数のパルスのパラメータとは独立して制御される、請求項1に記載のシステム。
- 前記第1のパルス繰返し周波数と前記第2のパルス繰返し周波数の位相が互いに一致している、請求項1に記載のシステム。
- 前記第1の電極と前記第2の電極の間の結合キャパシタンスが約10nF未満である、請求項1に記載のシステム。
- 前記第1の電極が、
円板形状と、
中心軸と、
外径と、を含み、
前記第2の電極が、
中心開口部を有する円板形状を含み、前記第1の電極が前記中心開口部内に配置され、
更に、前記第1の電極の前記中心軸と整列した中心軸と、
開口直径と、
外径を含む、請求項1に記載のシステム。 - システムであって、
ウェハプラットフォームと、
第1の電極とを備え、前記第1の電極が、
円板形状と、
中心軸と、
外径と、を含み、
更に、第2の電極を備え、前記第2の電極が、
中心開口部を有する円板形状を含み、前記第1の電極が前記中心開口部内に配置されており、
更に、前記第1の電極の前記中心軸と整列した中心軸と、
開口直径と、
外径と、を含み、
更に、前記第1の電極と電気的に結合され、10kHzを超えるパルス繰返し速度で5kVを超えるパルスを生成する第1の高電圧パルサーと、
前記第2の電極と電気的に結合され、10kHzを超えるパルス繰返し速度で5kVを超えるパルスを生成する第2の高電圧パルサーと、
を備えたシステム。 - 前記ウェハプラットフォームが、前記第2電極の外径と実質的に類似した外径を有する、請求項16に記載のシステム。
- 前記第2の高電圧パルサーが、前記第1の高電圧パルサーによって供給されるパルスの振幅の分数である振幅を有するパルスを供給する、請求項16に記載のシステム。
- 前記第2の高電圧パルサーが、前記第1の高電圧パルサーによって供給されるパルスのパルス繰返し周波数の分数であるパルス繰返し周波数を有するパルスを供給する、請求項16に記載のシステム。
- 前記第1の高電圧パルサーと前記第1の電極とに結合された第1の抵抗出力段と、前記第2の高電圧パルサーと前記第2の電極とに結合された第2の抵抗出力段を更に含む、請求項16に記載のシステム。
- 前記第1の高電圧パルサーと前記第1の電極とに結合されたバイアス補償回路を更に含む、請求項16に記載のシステム。
- 前記第1の電極と前記第2の電極との間に配置された絶縁材料のリングを更に含む、請求項16に記載のシステム。
- 前記ウェハプラットフォームが誘電体材料又はセラミック材料を含む、請求項16に記載のシステム。
- 方法であって、
プラズマチャンバ内の第1の電極に結合された第1の高電圧パルサーをパルシングし、前記第1の高電圧パルサーは、約1kVを超える第1の電圧で、約20kHzを超える第1のパルス繰返し周波数と、第1のパルス幅でパルシングし、
前記プラズマチャンバ内の第2の電極に結合された第2の高電圧パルサーをパルシングし、前記第2の高電圧パルサーは、約1kVを超える第2の電圧で、約20kHzを超える第2のパルス繰返し周波数と、第2のパルス幅でパルシングし、前記第1の電極と前記第2の電極はウェハの下に配置され、
前記プラズマチャンバ内で発生する物理現象に対応するパラメータを測定し、
前記第2の電圧、前記第2のパルス繰返し周波数、及び前記第2のパルサー幅のうち少なくとも1つを、測定されたパラメータに基づいて調整する、
ことを含む方法。 - 前記プラズマチャンバ内で発生する前記物理現象が、前記ウェハの表面に亘る電界の均一性に対応する、請求項24に記載の方法。
- 前記プラズマチャンバ内で発生する前記物理現象が、前記ウェハの表面に亘るイオン電流の均一性に対応する、請求項24に記載の方法。
- 前記パラメータが、前記第1の高電圧パルサーの抵抗器を流れる電流である、請求項24に記載の方法。
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US201862711334P | 2018-07-27 | 2018-07-27 | |
US201862711347P | 2018-07-27 | 2018-07-27 | |
US201862711468P | 2018-07-27 | 2018-07-27 | |
US201862711457P | 2018-07-27 | 2018-07-27 | |
US201862711464P | 2018-07-27 | 2018-07-27 | |
US201862711406P | 2018-07-27 | 2018-07-27 | |
US201862711467P | 2018-07-27 | 2018-07-27 | |
US62/711,464 | 2018-07-27 | ||
US62/711,468 | 2018-07-27 | ||
US62/711,334 | 2018-07-27 | ||
US62/711,406 | 2018-07-27 | ||
US62/711,347 | 2018-07-27 | ||
US62/711,457 | 2018-07-27 | ||
US62/711,467 | 2018-07-27 | ||
US201862717523P | 2018-08-10 | 2018-08-10 | |
US62/717,523 | 2018-08-10 | ||
US201962789526P | 2019-01-08 | 2019-01-08 | |
US201962789523P | 2019-01-08 | 2019-01-08 | |
US62/789,523 | 2019-01-08 | ||
US62/789,526 | 2019-01-08 | ||
US16/523,840 US10892140B2 (en) | 2018-07-27 | 2019-07-26 | Nanosecond pulser bias compensation |
US16/523,840 | 2019-07-26 | ||
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Family Applications (6)
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JP2021504454A Pending JP2021524659A (ja) | 2018-07-27 | 2019-07-29 | 空間変動型ウェハバイアス電力システム |
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US (10) | US10892140B2 (ja) |
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JP2009263778A (ja) * | 2008-03-31 | 2009-11-12 | Ngk Insulators Ltd | シリコン系薄膜成膜装置及びその方法 |
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