US10659019B2 - Nanosecond pulser ADC system - Google Patents
Nanosecond pulser ADC system Download PDFInfo
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- US10659019B2 US10659019B2 US16/525,357 US201916525357A US10659019B2 US 10659019 B2 US10659019 B2 US 10659019B2 US 201916525357 A US201916525357 A US 201916525357A US 10659019 B2 US10659019 B2 US 10659019B2
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- pulser
- nanosecond pulser
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- pulses
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- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
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- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
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- H—ELECTRICITY
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- H05K7/00—Constructional details common to different types of electric apparatus
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
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- H05K7/20281—Thermal management, e.g. liquid flow control
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
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- H02M3/00—Conversion of dc power input into dc power output
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- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Definitions
- Some embodiments include a nanosecond pulser comprising: a plurality of switches; one or more transformers; an output configured to output high voltage waveforms with a amplitude greater than 5 kV and a frequency greater than 1 kHz; and an ADC control module that sensors the output waveform.
- the nanosecond pulser system may include a nanosecond pulser, a pulser output, and a control system.
- the nanosecond pulser comprises: a pulser input; a high voltage DC power supply; one or more solid-state switches coupled with the high voltage DC power supply and the pulser input, the one or more solid-state switches switching the high voltage DC power supply based on input pulses provided by the pulser input; one or more transformers coupled with the one or more switches; and a pulser output coupled with the one or more transformers that outputs a high voltage waveform with an amplitude greater than about 2 kV and a pulse repetition frequency greater than about 1 kHz based on the pulser input.
- the control system may be coupled with the nanosecond pulser at a measurement point, the control system providing the input pulses to the pulser input.
- the measurement point comprises a point between the transformer and the pulser output.
- the nanosecond pulser system further comprises an electrode coupled with the pulser output; and the measurement point is at the electrode.
- control system measures the voltage at the measurement point, and adjusts the voltage, pulse repetition frequency, or duty cycle of the input pulses based on the measured voltage.
- control system measures the pulse repetition frequency at the measurement point, and adjusts the pulse repetition frequency of the input pulses based on the measured pulsed repetition frequency.
- the input pulses include a first burst comprising a first plurality of low voltage pulses, each of the first plurality of low voltage pulses having a first pulse width; the input pulses include a second burst comprising a second plurality of low voltage pulses each of the second plurality of low voltage pulses having a second pulse width; and the second pulse width is greater than the first pulse width.
- control system receives input data specifying a voltage and a pulse repetition frequency corresponding to an desired high voltage waveform; compares an output pulser waveform measured at the measurement point with the desired high voltage waveform; and determines adjustments to the pulser input to produce the desired high voltage waveform.
- control system includes a voltage divider that reduces the high voltage waveform by a factor of 1000.
- control system includes an analog to digital converter that converts the measured high voltage waveform into a digital signal.
- the nano second pulser system includes a metal shielding disposed between the nanosecond pulser and the control system.
- the nanosecond pulser comprises a resistive output stage, and wherein the measurement point is across a resistor in the resistive output stage.
- a nanosecond pulser system is disclosed.
- the nanosecond pulser system may include a nanosecond pulser
- a nanosecond pulser having a pulser output that outputs a high voltage waveform that includes a plurality of bursts where each burst comprises a plurality of pulses with an amplitude greater than 2 kV and a pulse repetition frequency greater than 1 kHz;
- control system that controls a number of characteristics of the high voltage waveform in real-time including the number of pulses in each burst, a pulse repetition frequency, a pulse width, and a pulse voltage.
- the pulser system controls at least one characteristics of the high voltage waveform with a resolution of less than about 1 ⁇ s.
- the pulser system controls at the period between pulses with an accuracy less than about 10 ⁇ s.
- control system controls the number of characteristics of the high voltage waveform in response to a plasma processing recipe.
- the plasma processing recipe comprises a plurality of stages and each stage is associated with an ion current, a chamber pressure, and a gas mixture.
- the plasma processing recipe corresponds with an electric field or voltage at a wafer surface.
- the high voltage waveform includes a first burst comprising a first plurality of pulses, each of the first plurality of pulses having a first pulse width; the high voltage waveform includes a second burst comprising a second plurality of pulses each of the second plurality of pulses having a second pulse width; and the second pulse width is greater than the first pulse width.
- the nanosecond pulser comprises a transformer and the output that outputs the high voltage waveform; and the control system is coupled with the nanosecond pulser at a point between the transformer and the pulser output.
- control system comprises a voltage divider and a fast analog to digital converter.
- Some embodiments include a nanosecond pulser system comprising a nanosecond pulser having a pulser output that outputs pulses with an amplitude greater than 2 kV and a pulse repetition frequency greater than 1 kHz; a plurality of sensors that measure an environmental characteristic of the nanosecond pulser system and each of the plurality of sensors provide a sensor signal representing a respective environmental characteristic; a sensor that provides an electronic sensor signal representing a physical characteristic of the nanosecond pulser system; and an interlock electrically coupled with the sensor and the nanosecond pulser that stops operation of the nanosecond pulser in the event the electronic sensor signal is above a first threshold.
- the nanosecond pulser system may also include a control module electrically coupled with the sensor that stops operation of the nanosecond pulser in the event the electronic sensor signal is above a second threshold, the second threshold being different than the first threshold.
- the nanosecond pulser system may also include a liquid cooling subsystem.
- the sensors comprises a liquid flow sensor disposed within the liquid cooling subsystem; the first threshold comprises a first flow rate; and the second threshold comprises a second flow rate that is greater than the first flow rate.
- the nanosecond pulser system may also include a cooling subsystem.
- one of the sensor comprises a temperature sensor disposed within the cooling subsystem; the first threshold comprises a first temperature; and the second threshold comprises a second temperature that is less than the first temperature.
- the nanosecond pulser system may also include a cooling subsystem that includes a liquid coolant; and a temperature sensor that measures the temperature of the liquid coolant.
- FIG. 1 is a circuit diagram of a nanosecond pulser according to some embodiments.
- FIG. 2 shows example waveforms produced by the nanosecond pulser.
- FIG. 3 is a circuit diagram of a nanosecond pulser system with a pulser and transformer stage and an energy recovery circuit according to some embodiments.
- FIG. 4 is a block diagram of an control system for a nanosecond pulser according to some embodiments.
- FIG. 5 is a block diagram of a flowchart of process according to some embodiments.
- FIG. 6 shows an illustrative computational system for performing functionality to facilitate implementation of embodiments described herein.
- Some embodiments include a high voltage nanosecond pulser system with an control system.
- the control system can monitor and/or measure and/or record waveforms produce by the high voltage nanosecond pulser.
- the control system may monitor the output waveforms produced by the high voltage nanosecond pulser system.
- the control system may perform waveform digitization and/or waveform processing.
- a high voltage nanosecond pulser system may pulse voltages with amplitudes of about 2 kV to about 40 kV. In some embodiments, a high voltage nanosecond pulser system may switch with frequencies up to about 500 kHz. In some embodiments, a high voltage nanosecond pulser system may provide single pulses of varying pulse widths from about 50 seconds to about 1 nanosecond. In some embodiments, a high voltage nanosecond pulser system may switch at pulse repetition frequencies greater than about 10 kHz. In some embodiments, a high voltage nanosecond pulser system may operate with rise times less than about 20 ns.
- FIG. 1 is a circuit diagram of a nanosecond pulser system 100 according to some embodiments.
- the nanosecond pulser system 100 can be implemented within a high voltage nanosecond pulser system.
- the nanosecond pulser system 100 can be generalized into five stages (these stages could be broken down into other stages or generalized into fewer stages and/or may or may not include the components shown in the figure).
- the nanosecond pulser system 100 includes a pulser and transformer stage 101 , a resistive output stage 102 , a lead stage 103 , a DC bias compensation circuit 104 , and a load stage 106 .
- the nanosecond pulser system 100 can produce pulses from the power supply with voltages greater than 2 kV, with rise times less than about 20 ns, and frequencies greater than about 10 kHz.
- the pulser and transformer stage 101 can produce a plurality of high voltage pulses with a high frequency and fast rise times and fall times.
- the high voltage pulser may comprise a nanosecond pulser.
- the pulser and transformer stage 101 can include one or more solid state switches S 1 (e.g., solid state switches such as, for example, IGBTs, a MOSFETs, a SiC MOSFETs, SiC junction transistors, FETs, SiC switches, GaN switches, photoconductive switches, etc.), one or more snubber resistors R 3 , one or more snubber diodes D 4 , one or more snubber capacitors C 5 , and/or one or more freewheeling diodes D 2 .
- One or more switches and or circuits can be arranged in parallel or series.
- the load stage 106 may represent an effective circuit for a plasma deposition system, plasma etch system, or plasma sputtering system.
- the capacitance C 2 may represent the capacitance of the dielectric material upon which a wafer may sit or capacitance C 2 may represent the capacitance between an electrode and a wafer which are separated by a dielectric material.
- the capacitor C 3 may represent the sheath capacitance of the plasma to the wafer.
- the capacitor C 9 may represent capacitance within the plasma between a chamber wall and the top surface of the wafer.
- the current source 12 and the current source I 1 may represent the ion current through the plasma sheaths.
- the resistive output stage 102 may include one or more inductive elements represented by inductor L 1 and/or inductor L 5 .
- the inductor L 5 may represent the stray inductance of the leads in the resistive output stage 102 .
- Inductor L 1 may be set to minimize the power that flows directly from the pulser and transformer stage 101 into resistor R 1 .
- the resistor R 1 may dissipate charge from the load stage 106 , for example, on fast time scales (e.g., 1 ns, 10 ns, 50 ns, 100 ns, 250 ns, 500 ns, 1,000 ns, etc. time scales).
- the resistance of resistor R 1 may be low to ensure the pulse across the load stage 106 has a fast fall time t f .
- the resistor R 1 may include a plurality of resistors arranged in series and/or parallel.
- the capacitor C 11 may represent the stray capacitance of the resistor R 1 including the capacitance of the arrangement series and/or parallel resistors.
- the capacitance of stray capacitance C 11 may be less than 5 nF, 2 nF, 1 nF, 500 pF, 250 pF, 100 pF, 50 pF, 10 pF, 1 pF, etc.
- the capacitance of stray capacitance C 11 may be less than the load capacitance such as, for example, less than the capacitance of C 2 , C 3 , and/or C 9 .
- a plurality of pulser and transformer stages 101 can be arranged in parallel and coupled with the resistive output stage 102 across the inductor L 1 and/or the resistor R 1 .
- Each of the plurality of pulser and transformer stages 101 may each also include diode D 1 and/or diode D 6 .
- the capacitor C 8 may represent the stray capacitance of the blocking diode D 1 . In some embodiments, the capacitor C 4 may represent the stray capacitance of the diode D 6 .
- the DC bias compensation circuit 104 may include a DC voltage source V 1 that can be used to bias the output voltage either positively or negatively.
- the capacitor C 12 isolates/separates the DC bias voltage from the resistive output stage and other circuit elements. It allows for a potential shift from one portion of the circuit to another. In some applications the potential shift it establishes is used to hold a wafer in place.
- Resistance R 2 may protect/isolate the DC bias supply from the high voltage pulsed output from the pulser and transformer stage 101 .
- the DC bias compensation circuit 104 is a passive bias compensation circuit and can include a bias compensation diode D 1 and a bias compensation capacitor C 15 .
- the bias compensation diode C 15 can be arranged in series with offset supply voltage V 1 .
- the bias compensation capacitor C 15 can be arranged across either or both the offset supply voltage V 1 and the resistor R 2 .
- the bias compensation capacitor C 15 can have a capacitance less than 100 nH to 100 ⁇ F such as, for example, about 100 ⁇ F, 50 ⁇ F, 25 ⁇ F, 10 ⁇ F, 2 ⁇ , 500 nH, 200 nH, etc.
- the bias capacitor C 12 may allow for a voltage offset between the output of the pulser and transformer stage 101 (e.g., at the position labeled 125 ) and the voltage on the electrode (e.g., at the position labeled 124 ).
- the electrode may, for example, be at a DC voltage of ⁇ 2 kV during a burst, while the output of the nanosecond pulser alternates between +6 kV during pulses and 0 kV between pulses.
- the bias compensation capacitor C 15 and the bias compensation diode D 1 may allow for the voltage offset between the output of the pulser and transformer stage 101 (e.g., at the position labeled 125 ) and the voltage on the electrode (e.g., at the position labeled 124 ) to be established at the beginning of each burst, reaching the needed equilibrium state. For example, charge is transferred from bias capacitor C 12 into bias compensation capacitor C 15 at the beginning of each burst, over the course of a plurality of pulses (e.g., about 5-100 pulses), establishing the correct voltages in the circuit.
- a plurality of pulses e.g., about 5-100 pulses
- the DC bias compensation circuit 104 may include one or more high voltage switches placed across the bias compensation diode D 1 and coupled with the power supply V 1 .
- a high voltage switch may include a plurality of switches arranged in series to collectively open and close high voltages.
- a high voltage switch may be coupled in series with either or both an inductor and a resistor.
- the inductor may limit peak current through high voltage switch.
- the inductor for example, may have an inductance less than about 100 ⁇ H such as, for example, about 250 ⁇ H, 100 ⁇ H, 50 ⁇ H, 25 ⁇ H, 10 ⁇ H, 5 ⁇ H, 1 ⁇ H, etc.
- the resistor for example, may shift power dissipation to the resistive output stage 102 .
- the resistance of resistor may have a resistance of less than about 1,000 ohms, 500 ohms, 250 ohms, 100 ohms, 50 ohms, 10 ohms, etc.
- a high voltage switch may include a snubber circuit.
- the high voltage switch may include a plurality of switches arranged in series to collectively open and close high voltages.
- the high voltage switch may, for example, include any switch described in U.S. patent application Ser. No. 16/178,565, filed Nov. 1, 2018, titled “High Voltage Switch with Isolated Power,” which is incorporated into this disclosure in its entirety for all purposes.
- a high voltage switch may be open while the pulser and transformer stage 101 is pulsing and closed when the pulser and transformer stage 101 is not pulsing.
- the high voltage switch is closed, for example, current can short across the bias compensation diode C 15 . Shorting this current may allow the bias between the wafer and the chuck to be less than 2 kV, which may be within acceptable tolerances.
- the pulser and transformer stage 101 can produce pulses having a high pulse voltage (e.g., voltages greater than 1 kV, 10 kV, 20 kV, 50 kV, 100 kV, etc.), high pulse repetition frequencies (e.g., frequencies greater than 1 kHz, 10 kHz, 100 kHz, 200 kHz, 500 kHz, 1 MHz, etc.), fast rise times (e.g., rise times less than about 1 ns, 10 ns, 50 ns, 100 ns, 250 ns, 500 ns, 1,000 ns, etc.), fast fall times (e.g., fall times less than about 1 ns, 10 ns, 50 ns, 100 ns, 250 ns, 500 ns, 1,000 ns, etc.) and/or short pulse widths (e.g., pulse widths less than about 1,000 ns, 500 ns, 250 ns, 100 ns, 20 ns, etc.) and/or
- the various stages or components shown in FIG. 1 are optional.
- the resistive output stage 102 may be removed or replaced.
- FIG. 2 shows example waveforms produced by the nanosecond pulser system 100 .
- the pulse waveform 205 may represent the voltage provided by the pulser and transformer stage 101 .
- the pulse waveform 205 produces a pulse with the following qualities: high voltage (e.g., greater than about 4 kV as shown in the waveform), a fast rise time (e.g., less than about 200 ns as shown in the waveform), a fast fall time (e.g., less than about 200 ns as shown in the waveform), and short pulse width (e.g., less than about 300 ns as shown in the waveform).
- the waveform 210 may represent the voltage at the surface of a wafer represented in the circuit shown in FIG.
- the pulse waveform 215 represent the current flowing from the pulser and transformer stage 101 to the plasma.
- the nanosecond pulser system 100 may or may not include either or both diodes D 1 or D 2 .
- the high voltage pulses from the pulser and transformer stage 101 charge the capacitor C 2 . Because the capacitance of capacitor C 2 is large compared to the capacitance of capacitor C 3 and/or capacitor C 1 , and and/or because of the short pulse widths of the pulses, the capacitor C 2 may take a number of pulses from the high voltage pulser to fully charge. Once the capacitor C 2 is charged the circuit reaches a steady state, as shown by the waveforms in FIG. 2 .
- the capacitor C 2 In steady state and when the switch S 1 is open, the capacitor C 2 is charged and slowly dissipates through the resistive output stage 102 , as shown by the slightly rising slope of waveform 210 .
- the voltage at the surface of the waver (the point between capacitor C 2 and capacitor C 3 ) is negative. This negative voltage may be the negative value of the voltage of the pulses provided by the pulser and transformer stage 101 .
- the voltage of each pulse is about 4 kV; and the steady state voltage at the wafer is about ⁇ 4 kV.
- the voltage across the capacitor C 2 may flip (the pulse from the pulser is high as shown in the pulse waveform 205 ) as the capacitor C 2 is charged.
- the voltage at the point between capacitor C 2 and capacitor C 3 e.g., at the surface of the wafer
- the pulses from the high voltage pulser produce a plasma potential (e.g., a potential in a plasma) that rise from a negative high voltage to zero and returns to the negative high voltage at high frequencies, with fast rise times, fast fall times, and/or short pulse widths.
- the action of the resistive output stage may rapidly discharge the stray capacitance C 1 , and may allow the voltage at the point between capacitor C 2 and capacitor C 3 to rapidly return to its steady negative value of about ⁇ 4 kV as shown by waveform 210 .
- the resistive output stage may allow the voltage at the point between capacitor C 2 and capacitor C 3 to exists for about % of the time, and thus maximizes the time which ions are accelerated into the wafer.
- the components contained within the resistive output stage may be specifically selected to optimize the time during which the ions are accelerated into the wafer, and to hold the voltage during this time approximately constant. Thus, for example, a short pulse with fast rise time and a fast fall time may be useful, so there can be a long period of fairly uniform negative potential.
- Various other waveforms may be produced by the nanosecond pulser system 100 .
- FIG. 3 is a circuit diagram of a nanosecond pulser system 300 with the pulser and transformer stage 101 and an energy recovery circuit 305 according to some embodiments.
- the energy recovery circuit may replace the resistive output stage 102 shown in FIG. 1 .
- the energy recovery circuit 305 may be positioned on or electrically coupled with the secondary side of the transformer T 1 .
- the energy recovery circuit 305 may include a diode 330 (e.g., a crowbar diode) across the secondary side of the transformer T 1 .
- the energy recovery circuit 305 may include diode 310 and inductor 315 (arranged in series), which can allow current to flow from the secondary side of the transformer T 1 to charge the power supply C 7 .
- the diode 310 and the inductor 315 may be electrically connected with the secondary side of the transformer T 1 and the power supply C 7 .
- the energy recovery circuit 305 may include diode 335 and/or inductor 340 electrically coupled with the secondary of the transformer T 1 .
- the inductor 340 may represent the stray inductance and/or may include the stray inductance of the transformer T 1 .
- the nanosecond pulser When the nanosecond pulser is turned on, current may charge the load stage 106 (e.g., charge the capacitor C 3 , capacitor C 2 , or capacitor C 9 ). Some current, for example, may flow through inductor 315 when the voltage on the secondary side of the transformer T 1 rises above the charge voltage on the power supply C 7 . When the nanosecond pulser is turned off, current may flow from the capacitors within the load stage 106 through the inductor 315 to charge the power supply C 7 until the voltage across the inductor 315 is zero.
- the diode 330 may prevent the capacitors within the load stage 106 from ringing with the inductance in the load stage 106 or the bias compensation circuit 104 .
- the diode 310 may, for example, prevent charge from flowing from the power supply C 7 to the capacitors within the load stage 106 .
- the value of inductor 315 can be selected to control the current fall time.
- the inductor 315 can have an inductance value between 1 ⁇ H-500 ⁇ H.
- the energy recovery circuit 305 may include an energy recovery switch that can be used to control the flow of current through the inductor 315 .
- the energy recovery switch for example, may be placed in series with the inductor 315 .
- the energy recovery switch may be closed when the switch S 1 is open and/or no longer pulsing to allow current to flow from the load stage 106 back to the high voltage load C 7 .
- the energy recovery switch may include a plurality of switches arranged in series to collectively open and close high voltages.
- the energy recovery switch may, for example, include any switch described in U.S. patent application Ser. No. 16/178,565, filed Nov. 1, 2018, titled “High Voltage Switch with Isolated Power,” which is incorporated into this disclosure in its entirety for all purposes.
- the nanosecond pulser system 300 may produce similar waveforms as those shown in FIG. 2 .
- FIG. 4 is a block diagram of an control system 400 for a nanosecond pulser system 100 (or nanosecond pulser system 300 ) according to some embodiments.
- the control system 400 may be electrically coupled with the nanosecond pulser system 100 at one or more locations.
- a first HV signal 405 A (or a second HV signal 405 B) may include the voltage signal at point 120 of the nanosecond pulser system 100 , which is between the pulser and transformer stage 101 and the bias compensation circuit 104 .
- a first HV signal 405 A (or a second HV signal 405 B) may include the voltage signal at point 124 of the nanosecond pulser system 100 , which is between the load stage 106 and the bias compensation circuit 104 .
- a first HV signal 405 A may include the voltage signal at point 125 of the nanosecond pulser system 100 , which is prior to the resistive output stage 102 .
- a first HV signal 405 A may include the voltage on the wafer, chuck, or electrode. While two signals are shown, any number of signals may be received.
- a first HV signal 405 A may include the voltage across the resistor R 1 in resistive output stage 102 , which may be representative of the ion current in the chamber.
- a first HV signal 405 A may include the voltage in the energy recovery stage, such as, for example, the voltage across inductor 315 , which may be representative of the ion current in the chamber.
- the first HV signal 405 A and the second HV signal 405 B may include the voltage signals on each side of the capacitor C 12 of the bias compensation circuit 104 . Any number of other signals may be received.
- the first HV signal 405 A or the second HV signal 405 B may include the voltage signals provided to the load stage 106 . In some embodiments, the first HV signal 405 A or the second HV signal 405 B may include the voltage signals provided to the bias compensation circuit 104 . In some embodiments, the first HV signal 405 A or the second HV signal 405 B may include the voltage signals provided to the lead stage 103 . In some embodiments, the first HV signal 405 A or the second HV signal 405 B may include the voltage signals provided to the pulser and transformer stage 101 may be measured. In some embodiments, the first HV signal 405 A or the second HV signal 405 B may include the voltage signals provided to the resistive output stage 102 .
- the first HV signal 405 A and the second HV signal 405 B collectively or individually may be referred to as the HV input signal 405 .
- the HV input signal 405 may divided at voltage divider 410 .
- the voltage divider 410 may include high value resistors or low value capacitors to divide the high voltage HV input signal (e.g., greater than 1 KV) to a low voltage signal (e.g., less than 50 V).
- the voltage divider 410 may divide the voltage with a 500:1 ratio, 1,000:1 ratio, a 10,000:1 ratio, a 100,000:1 ratio, etc.
- the voltage divider 410 may divide the HV input signal 405 voltage of 0-10 kV to a voltage of 0-20 V.
- the voltage divider 410 may divide the voltage with minimal power loss such as, for example, less than about 5 W of power loss.
- the voltage divider 410 may include a low value capacitor, a large value capacitor, a low value resistor, and a large value resistor.
- the low value capacitor for example, may comprise a capacitor that has a capacitance value of about 0.1 pF, 0.5 pF, 1.0 pF, 2.5 pF, 5.0 pF, 10.0 pF, 100 pF, 1 nF, 10 nF, etc.
- the large value capacitor for example, may comprise a capacitor that has a capacitance value of about 500 pf. In some embodiments, the large value capacitor may have a capacitance value that is about 50, 100, 250, 500, 1,000, 2,500, 5,000 pF, etc. greater than the capacitance value of the low value capacitor.
- the low value resistor may have a resistance value of about 1.0 k ⁇ , 2.5 k ⁇ , 5.0 k ⁇ , 10 k ⁇ , 25 k ⁇ , 50 k ⁇ , 100 k ⁇ , etc.
- the large value resistor may have a resistance value of about 0.5 M ⁇ , 1.0 M ⁇ , 2.5 M ⁇ , 5.0 M ⁇ , 10 M ⁇ , 25 M ⁇ , 50 M ⁇ , 100 M ⁇ , etc.
- the large value resistor may have a resistance value that is about 50 ⁇ , 100 ⁇ , 250 ⁇ , 500 ⁇ , 1,000 ⁇ , 2,500 ⁇ , 5,000 ⁇ , etc. greater than the resistance value of the low value resistor.
- the ratio of the low value capacitor to the large value capacitor may be substantially the same as the ratio of the low value resistor to the large value resistor.
- the voltage divider 410 may receive the HV input signal and output a divided voltage signal.
- the divided voltage signal for example, may be 100, 250, 500, 750, 1,000, etc. times smaller than the HV input signal.
- a filter 415 may be included such as, for example, to filter out any noise from the divided voltage signal.
- the filter for example, may include any type of low pass filter, a band pass filter, a band stop filter, or a high pass filter.
- the divided voltage signal may be digitized by the first ADC 420 .
- Any type of analog to digital converter may be used.
- the first ADC 420 may produce a digitized waveform signal.
- the first ADC 420 may capture data at 100, 250, 500, 1,000, 2,000, 5,000 MSPS (megasamples per second or millions of samples per second).
- the digitized waveform signal may be communicated to the controller 425 using any type of communication protocol such as, for example, SPI, UART, RS-232, USB, I2C, etc.
- any of the voltage divider 410 , the filter 415 , or the first ADC 420 may be isolated from the nanosecond pulser system 100 via galvanic isolation or via fiber optic link.
- the controller 425 may comprise any type of controller such as, for example, an FPGA, ASIC, complex programmable logic device, microcontroller, system on a chip (SoC), or any combination thereof.
- the controller 425 may include any or all the components of the computational system 600 .
- the controller 425 may include a standard microcontroller such as, for example, Broadcom Arm Cortex, Intel ARM Cortex, PIC32, etc.
- the controller 425 may receive a trigger signal from trigger 430 .
- the first ADC 420 may receive the trigger signal from trigger 430 .
- the trigger signal may provide the timing of data acquisition at the first ADC 420 .
- the trigger signal for example, may be a 5V TTL trigger.
- the trigger signal for example, may, have a 50 ohm termination.
- the digitized signal may then be output from the controller 425 via one or more output ports such as, for example, a first output 435 A or a second output 435 B (individually or collectively output 435 ). These outputs may be coupled with a nanosecond pulser controller. Either or both the output 435 may include an electrical connecter such as, for example, an LVDS, TTL, LVTTL connector. Either or both the output 435 may provide data to the nanosecond pulser controller using any type of communication protocol such as, for example, SPI, UART, RS-232, USB, I2C, EtherCat, Ethernet, Profibus, PROFINET.
- any type of communication protocol such as, for example, SPI, UART, RS-232, USB, I2C, EtherCat, Ethernet, Profibus, PROFINET.
- control system 400 may couple with the nanosecond pulser system 100 via a 4 mm Multilam receptacles on the control system 400 .
- the control system 400 may include a second ADC 445 , which may receive inputs from a first sensor 450 A and a second sensor 450 B (individually or collectively sensor 450 ) (or any number of sensors).
- the second ADC 445 may digitize analog signals from the sensors 450 .
- the sensors 450 may include, for example, a sensor that senses inlet water temperature, dielectric fluid temperature, dielectric fluid pressure, chassis air temperature, voltage, fluid flow, fluid leak sensor, etc.
- the second ADC 445 may include ARM, PIC32, AVR, PSOC, or PIC32.
- the second ADC 445 and the first ADC 420 may comprise a single ADC device. In some embodiments, either or both the second ADC 445 or the first ADC 420 may be part of the controller 425 . In some embodiments, the first ADC 420 may operate at a higher acquisition rate than the second ADC.
- control system may measure the full-width half-max, peak voltage, DC bias, rise time, fall time, etc. of pulses in the nanosecond pulser system 100 .
- control system 400 may monitor the voltage, frequency, pulse width, etc. of pulses and, in response, may adjust the voltage, pulse repetition frequency, pulse width, burst repetition frequency (where a burst includes a plurality of pulses), etc. provided to the input of the nanosecond pulser system 100 .
- the first ADC 420 may monitor the voltage amplitude of a waveform. This voltage data may be provided to the nanosecond pulser controller. The nanosecond pulser controller may adjust the amplitude or frequency of the signal provided to the nanosecond pulser system 100 .
- control system 400 may output arbitrary pulse signals via output 435 to one or more nanosecond pulser systems 100 .
- the output 435 may include either fiber or electric connections.
- control system 400 can include a plurality of output pulse channels (e.g., 1, 2, 5, 8, 20, 50, 100, etc.) that may, for example, be independent from each other.
- the plurality of output pulse channels may, for example, output pulses with sub-nanosecond resolution.
- the controller 425 may send a signal to the nanosecond pulser system 100 to produce pulses with a higher voltage. If the pulse voltage is greater than a predetermined voltage, the first ADC 420 may send a signal to the nanosecond pulser system 100 to produce pulses with a lower voltage.
- the signal to the nanosecond pulser to increase the pulse voltage may comprise a low voltage pulse that has a longer pulse width than the previously sent signal, and the signal to the nanosecond pulser to decrease the pulse voltage may comprise a low voltage pulse that has a shorter pulse width than the previously sent signal.
- the controller 425 may send a signal to the nanosecond pulser system 100 to produce pulses with a lower frequency. If the burst repetition frequency is less than an desired burst repetition frequency, the controller 425 may send a signal to the nanosecond pulser system 100 to produce pulses with a higher pulse repetition frequency. If the full width half max of the measured pulse is different than an desired burst repetition frequency, the controller 425 may send a signal to the nanosecond pulser system 100 to produce a pulses with an adjusted pulse width or pulse repetition frequency.
- the first ADC 420 may send a signal to the nanosecond pulser system 100 to produce a waveform with a shorter or longer pulse width. If the waveform duty cycle is shorter or longer than an desired duty cycle, the first ADC 420 may send a signal to the nanosecond pulser system 100 to produce a pulses with the appropriate duty cycle.
- the control system 400 may monitor other waveform characteristics and/or adjust these other characteristics.
- control system 400 may output arbitrary pulse signals via output 435 to one or more nanosecond pulser systems 100 .
- the control system may comprise an arbitrary pulse generator.
- the output 435 may include either fiber or electric connections.
- control system 400 can include a plurality of output pulse channels (e.g., 1, 2, 5, 8, 20, 50, 100, etc.) that may, for example, be independent from each other.
- the plurality of output pulse channels may, for example, output pulses with sub-nanosecond resolution.
- the control system 400 may output pulses with resolution less than about 0.1 ns.
- the control system 400 may output pulses with jitter less than about 100 ps.
- each output pulse channel of the control system 400 may output pulses to a nanosecond pulser system 100 that triggers the nanosecond pulser system 100 .
- the control system 400 may, for example, adjust parameters of the output pulses in real-time or between pulses. These parameters may include pulse width, pulse repetition frequency, duty cycle, burst repetition frequency, voltage, number of pulses in a burst, the number of burst, etc. In some embodiments, one or more parameters may be adjusted or changed based on input to the control system 400 or based on a recipe or a program.
- a recipe may include alternating high bursts and low bursts.
- a high burst for example, may include a plurality of high voltage pulses.
- a low burst for example, may include a plurality of lower voltage pulses.
- the high burst and the low burst may, for example, include the same number of pulses or a different number of pulses within each burst.
- a low burst for example, may have a voltage that is 10%, 20%, 30%, 40%, 50%, etc. lower than the voltage of the high burst voltage.
- the alternating high bursts and low bursts may include 5%, 20%, 50%, 100%, 125%, 150%, etc. ratio of low bursts to high bursts (low-high ratio).
- a 20% low-high ratio may include a train of 10 bursts, where each burst includes about 500 pulses (or any number of pulses from 1 to 10,000 pulses.
- 2 bursts may be low voltage bursts and 8 bursts may be high voltage bursts.
- the controller 425 may communicate pulses with longer low voltage pulses to produce the high bursts and communicate pulses with shorter low voltage pulses to produce the low bursts to the nanosecond pulser to produce alternating high bursts and low bursts as described in U.S. patent application Ser. No. 16/114,195, titled “ARBITRARY WAVEFORM GENERATION USING NANOSECOND PULSES,” which is incorporated herein for all purposes.
- control system 400 comprises an electrical shield.
- An electrical shield for example, can separate the high voltage components from the low voltage components.
- An electrical shield for example, may be disposed physically between the divider 410 and the controller 425 or the first ADC 420 .
- the electric shield may be disposed physically between the nanosecond pulser system 100 and the controller 425 or the first ADC 420 .
- the electric shield may be disposed physically between resistors in the divider 410 . In some embodiments, the electric shield may be disposed physically between capacitors in the divider 410 .
- the electrical shield may comprise any type of electrically conductive material or metal such as, for example, copper, nickel, aluminum, bronze, steel, brass, etc.
- the electrical shield may comprise sheet metal, metal screen, or metal foam.
- control system 400 may monitor the sensors 150 and take action. A number of examples are provided below.
- the nanosecond pulser system 100 may include a cooling subsystem.
- the cooling subsystem may include a fluid, such as, for example, either water or a dielectric fluid, that flows through the cooling subsystem to remove heat from the nanosecond pulser system 100 .
- one of the sensors 450 may include a flow rate sensor for fluid in the cooling system. If the controller 425 determines the flow rate is below a flow rate threshold, the control system 400 will not allow the nanosecond pulser system 100 to turn on. If the controller 425 determines the flow rate is below a flow rate threshold, the controller 425 may turn off the nanosecond pulser system 100 .
- the flow rate sensor in some cases with the controller 425 ) may be a flow rate interlock. A flow rate interlock, for example, may prevent the nanosecond pulser system 100 from turning on or may turn off the nanosecond pulser system 100 , if it is already on, if the flow rate is below the flow rate threshold.
- one of the sensors 450 may include a thermometer coupled with the cooling subsystem. If the controller 425 determines the temperature of the cooling subsystem (e.g., the temperature of the fluid) is above a water temperature threshold, the control system 400 will not allow the nanosecond pulser system 100 to turn on. If the controller 425 determines the temperature of the water is above the water temperature threshold, the controller 425 may turn off the nanosecond pulser system 100 .
- a temperature interlock which is distinct from the controller 425 , for example, may prevent the nanosecond pulser system 100 from turning on or may turn off the nanosecond pulser system 100 , if it is already on, if the temperature is above the water temperature threshold.
- one of the sensors 450 may include a liquid level sensor for a fluid reservoir in a cooling system. If the controller 425 determines the reservoir liquid level is above a liquid level threshold, the control system 400 will not turn on. If the controller 425 determines the reservoir liquid level is above the liquid level threshold, the controller 425 may turn off the nanosecond pulser system 100 .
- a liquid level interlock which is distinct from the controller 425 , for example, may prevent the nanosecond pulser system 100 from turning on or may turn off the nanosecond pulser system 100 , if it is already on, if the liquid level is below the liquid level threshold.
- the nanosecond pulser system 100 may include a nitrogen purge subsystem that pumps nitrogen into the nanosecond pulser system.
- the nitrogen purge system may introduce dry nitrogen into an enclosure within which the high voltage nanosecond pulser system is disposed.
- one of the sensors 450 may include a nitrogen pressure sensor. If the controller 425 determines the nitrogen pressure level is below a pressure threshold the control system 400 will not turn on. If the controller 425 determines the nitrogen pressure level is below the pressure threshold the controller 425 may turn off the nanosecond pulser system 100 .
- a pressure interlock which is distinct from the controller 425 , for example, may prevent the nanosecond pulser system 100 from turning on or may turn off the nanosecond pulser system 100 , if it is already on, if the pressure is below the pressure threshold.
- one of the sensors 450 may include a DC voltage sensor that may be coupled with a DC power supply in the nanosecond pulser system 100 .
- a DC voltage sensor that may be coupled with a DC power supply in the nanosecond pulser system 100 .
- the controller 425 may turn off the nanosecond pulser system 100 .
- the controller 425 may turn off pulsing.
- output 435 may include an EtherCat module that may communicate with a third party system (e.g., an external system).
- the EtherCat module may comprise any type of communication module.
- the EtherCat may include one or more components of the computational system 600 .
- control system 400 may include one or more interlocks coupled with one or more sensors 450 .
- An interlock may, for example, automatically interrupt operation of the nanosecond pulser system 100 without interaction with the controller 425 if the one of the sensor detects a parameter out of tolerance.
- An interlock signal for example, may be coupled with a nanosecond pulser system 100 control signal using an AND gate that only allows the control signal to operate the nanosecond pulser if the interlock provides a positive signal.
- a sensor 450 may be coupled with both the controller 425 and an interlock.
- the interlock may operate at a first threshold level and the controller 425 may operate at a second, different threshold level.
- the interlock for example, may operate at a first threshold that protects the nanosecond pulser system from immediate or near-term damage.
- the controller for example, may operate at a second threshold that is out of tolerance and the controller may adjust various parameters to bring the system into tolerance, or monitor the system for a period of time before turning off the nanosecond pulser, or may turn off the nanosecond pulser.
- a 24V DC interlock may be included may be coupled with a voltage sensor that measures input voltage from a 24V DC power supplier. If the voltage from the 24 V DC power supply exceeds 24V by a predetermined threshold or percentage, then the interlock will send a negative signal to the nanosecond pulser system 100 and the nanosecond pulser system 100 will not operate.
- a high voltage DC interlock may be included may be coupled with a voltage sensor that measures input voltage from a high voltage DC power supplier. If the voltage from the high voltage DC power supply exceeds the expected voltage by a predetermined threshold or percentage, then the interlock will send a negative signal to the nanosecond pulser system 100 and the nanosecond pulser system 100 will not operate.
- a dry N 2 pressure interlock may be coupled with a pressure sensor coupled with a nitrogen purge subsystem. If the pressure from the nitrogen purge subsystem exceeds a predetermined threshold or percentage, then the interlock will send a negative signal to the nanosecond pulser system 100 and the nanosecond pulser system 100 will not operate.
- a water flow interlock may be coupled with a water line in the thermal management system. If the flow rate of the water exceeds a predetermined threshold or percentage, then the interlock will send a negative signal to the nanosecond pulser system 100 and the nanosecond pulser system 100 will not operate.
- a dielectric fluid flow interlock may be coupled with a dielectric fluid line in the thermal management system. If the flow rate of the dielectric fluid exceeds a predetermined threshold or percentage, then the interlock will send a negative signal to the nanosecond pulser system 100 and the nanosecond pulser system 100 will not operate.
- a reservoir level interlock may be coupled with a water or dielectric fluid reservoir in the thermal management system. If the reservoir level exceeds a predetermined threshold or percentage, then the interlock will send a negative signal to the nanosecond pulser system 100 and the nanosecond pulser system 100 will not operate.
- a water temperature interlock may be coupled with a thermometer in the thermal management system. If the temperature of the water exceeds a predetermined threshold or percentage, then the interlock will send a negative signal to the nanosecond pulser system 100 and the nanosecond pulser system 100 will not operate.
- a dielectric fluid temperature interlock may be coupled with a thermometer in the thermal management system. If the temperature of the dielectric fluid exceeds a predetermined threshold or percentage, then the interlock will send a negative signal to the nanosecond pulser system 100 and the nanosecond pulser system 100 will not operate.
- control system may control the operation of a pulsing system such as, for example, pulse width, duty cycle, high voltage set point, on/off, returns current output voltage, high voltage current set point, returns current output current, enable high voltage output, returns high voltage enable state, emergency shutdown, etc.
- a pulsing system such as, for example, pulse width, duty cycle, high voltage set point, on/off, returns current output voltage, high voltage current set point, returns current output current, enable high voltage output, returns high voltage enable state, emergency shutdown, etc.
- a user may interface with the control system through an EtherCat module.
- a user may issue a PW command to set the output pulse width.
- user may issue DUTY command to set the duty cycle.
- a user may issue a PWR command to turn the power on and begin operation of unit or off to end operation of the unit.
- the unit may continue to operate as set until issued another command to change duty cycle, pulse width, or issued another PWR command to shut off.
- control system 400 may receive commands from an external source in any type of communication protocols such as, for example, EtherCat, LXI, Ethernet, Profibus, PROFINET, RS-232, ModBus, USB, UART, SPI, CC-Lin, etc.
- EtherCat EtherCat
- LXI Ethernet
- Profibus Profibus
- PROFINET PROFINET
- RS-232 ModBus
- USB UART
- SPI CC-Lin, etc.
- FIG. 5 is a block diagram of a flowchart of process 500 according to some embodiments.
- Process 500 includes a number of blocks. Any additional blocks may be added or any blocks may be removed.
- the process 500 may, for example, be executed by one or more components of computational system 600 .
- the process 500 may, for example be executed by the control system 400 .
- the process 500 can send a plurality of low voltage pulses to a high voltage pulser system (e.g., nanosecond pulser 100 or nanosecond pulser 300 ) based on a recipe.
- the low voltage pulses may have a peak voltage of less than 20 V such as, for example, 5V.
- the low voltage pulses may have a pulse repetition frequency and each pulse may have a pulse width.
- the recipe may include alternating high bursts and low bursts as described above. In some embodiments, the recipe may be adjusted or changed in real time. In some embodiments, the recipe may be dependent on various parameters or characteristics of the plasma chamber.
- high voltage pulses can be measured at the high voltage pulser.
- the high voltage pulsers may have a peak voltage greater than 2 kV. In some embodiments, the high voltage pulses may have a peak voltage that is more then 100 times the peak voltage of the low voltage pulses. In some embodiments, the high voltage pulses may be measured at the electrode within a plasma chamber. In some embodiments, the high voltage pulses may be measured across a resistor within a resistive output stage or an energy recover stage of the high voltage pulser. In some embodiments, the high voltage pulses may be measured at a bias capacitor within the high voltage pulser.
- the full-width half-max, peak voltage, DC bias, rise time, fall time, etc. of the high voltage pulses can be measured.
- the measure pulses can be compared with the desired (or anticipated) pulses. If the measured pulses are consistent with the desired pulses (e.g., within some tolerance), the process 500 proceeds to block 505 and the process repeats.
- process 500 proceeds to block 520 .
- the pulse width or the pulse repetition frequency of the low voltage pulses are adjusted. For example, if the voltage of the high voltage pulses is lower than desired, then the pulse width of the low voltage pulses may be increased. As another example, if the voltage of the high voltage pulses is higher than desired, then the pulse width of the low voltage pulses may be decreased.
- the pulse repetition frequency (or the pulse repetition period) of the high voltage pulses may be lower than desired, then the pulse repetition frequency of the low voltage pulses may be increased. As another example, if the pulse repetition frequency (or the pulse repetition period) of the high voltage pulses is higher than desired, then the pulse repetition frequency of the low voltage pulses may be decreased.
- the process 500 may be executed in real time.
- the process 500 may repeat in less than about 20 ⁇ s, 10 ⁇ s, 5 ⁇ s, 1 ⁇ s, etc.
- the process 500 may control the accuracy of the period between pulses (e.g., the pulse repetition period) with an accuracy less than about 50 ⁇ s, 20 ⁇ s, 10 ⁇ s, 5 ⁇ s, 1 ⁇ s, etc.
- control system 400 may include a computational system that includes some or all of the components of computational system 600 , shown in FIG. 6 .
- computational system 600 can be used perform any calculation, identification and/or determination described in this document.
- the computational system 600 may include hardware elements that can be electrically coupled via a bus 605 (or may otherwise be in communication, as appropriate).
- the hardware elements can include one or more processors 610 , including without limitation one or more general-purpose processors and/or one or more special-purpose processors (such as digital signal processing chips, graphics acceleration chips, and/or the like); one or more input devices 615 , which can include without limitation a mouse, a keyboard and/or the like; and one or more output devices 620 , which can include without limitation a display device, a printer and/or the like.
- processors 610 including without limitation one or more general-purpose processors and/or one or more special-purpose processors (such as digital signal processing chips, graphics acceleration chips, and/or the like);
- input devices 615 which can include without limitation a mouse, a keyboard and/or the like;
- output devices 620 which can include without limitation a display device, a printer and/or the like.
- the computational system 600 may further include (and/or be in communication with) one or more storage devices 625 , which can include, without limitation, local and/or network accessible storage and/or can include, without limitation, a disk drive, a drive array, an optical storage device, a solid-state storage device, such as a random access memory (“RAM”) and/or a read-only memory (“ROM”), which can be programmable, flash-updateable and/or the like.
- storage devices 625 can include, without limitation, local and/or network accessible storage and/or can include, without limitation, a disk drive, a drive array, an optical storage device, a solid-state storage device, such as a random access memory (“RAM”) and/or a read-only memory (“ROM”), which can be programmable, flash-updateable and/or the like.
- RAM random access memory
- ROM read-only memory
- the computational system 600 might also include a communications subsystem 630 , which can include without limitation a modem, a network card (wireless or wired), an infrared communication device, a wireless communication device and/or chipset (such as a Bluetooth device, an 802.6 device, a Wi-Fi device, a WiMax device, cellular communication facilities, etc.), and/or the like.
- the communications subsystem 630 may permit data to be exchanged with a network (such as the network described below, to name one example), and/or any other devices described herein.
- the computational system 600 will further include a working memory 635 , which can include a RAM or ROM device, as described above.
- the computational system 600 also can include software elements, shown as being currently located within the working memory 635 , including an operating system 640 and/or other code, such as one or more application programs 645 , which may include computer programs of the invention, and/or may be designed to implement methods of the invention and/or configure systems of the invention, as described herein.
- an operating system 640 and/or other code such as one or more application programs 645 , which may include computer programs of the invention, and/or may be designed to implement methods of the invention and/or configure systems of the invention, as described herein.
- application programs 645 which may include computer programs of the invention, and/or may be designed to implement methods of the invention and/or configure systems of the invention, as described herein.
- one or more procedures described with respect to the method(s) discussed above might be implemented as code and/or instructions executable by a computer (and/or a processor within a computer).
- a set of these instructions and/or codes might be stored on a computer-readable storage medium, such as the storage device(s
- the storage medium might be incorporated within the computational system 600 or in communication with the computational system 600 .
- the storage medium might be separate from a computational system 600 (e.g., a removable medium, such as a compact disc, etc.), and/or provided in an installation package, such that the storage medium can be used to program a general-purpose computer with the instructions/code stored thereon.
- These instructions might take the form of executable code, which is executable by the computational system 600 and/or might take the form of source and/or installable code, which, upon compilation and/or installation on the computational system 600 (e.g., using any of a variety of generally available compilers, installation programs, compression/decompression utilities, etc.) then takes the form of executable code.
- the term “substantially” means within 5% or 10% of the value referred to or within manufacturing tolerances. Unless otherwise specified, the term “about” means within 5% or 10% of the value referred to or within manufacturing tolerances.
- a computing device can include any suitable arrangement of components that provides a result conditioned on one or more inputs.
- Suitable computing devices include multipurpose microprocessor-based computer systems accessing stored software that programs or configures the computing system from a general-purpose computing apparatus to a specialized computing apparatus implementing one or more embodiments of the present subject matter. Any suitable programming, scripting, or other type of language or combinations of languages may be used to implement the teachings contained herein in software to be used in programming or configuring a computing device.
- Embodiments of the methods disclosed herein may be performed in the operation of such computing devices.
- the order of the blocks presented in the examples above can be varied—for example, blocks can be re-ordered, combined, and/or broken into sub-blocks. Certain blocks or processes can be performed in parallel.
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Abstract
Description
Claims (25)
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WO2022011315A1 (en) * | 2020-07-09 | 2022-01-13 | Eagle Harbor Technologies, Inc. | Ion current droop compensation |
JP2023544584A (en) * | 2020-10-02 | 2023-10-24 | イーグル ハーバー テクノロジーズ,インク. | Ion current droop compensation |
CN112583295B (en) * | 2020-12-15 | 2022-03-29 | 中国工程物理研究院激光聚变研究中心 | High repetition frequency and high voltage nanosecond pulse driving power supply system and operation method |
US11863089B2 (en) * | 2021-03-26 | 2024-01-02 | Applied Materials, Inc. | Live measurement of high voltage power supply output |
US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
US11639818B2 (en) | 2021-06-24 | 2023-05-02 | Booz Allen Hamilton Inc. | Thermal management systems |
US11997767B2 (en) | 2021-10-20 | 2024-05-28 | Goodrich Corporation | Pulse switch-based power supply systems, methods, and devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3339108A (en) * | 1965-01-28 | 1967-08-29 | Gen Radio Co | Capacitor charging and discharging circuitry |
US20190131110A1 (en) * | 2017-08-25 | 2019-05-02 | Eagle Harbor Technologies, Inc. | Arbitarary waveform generation using nanosecond pulses |
Family Cites Families (242)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1542662A (en) | 1975-09-12 | 1979-03-21 | Matsushita Electric Ind Co Ltd | Power supply |
US4070589A (en) | 1976-10-29 | 1978-01-24 | The Singer Company | High speed-high voltage switching with low power consumption |
US4438331A (en) | 1981-12-02 | 1984-03-20 | Power Spectra, Inc. | Bulk semiconductor switch |
US4504895A (en) | 1982-11-03 | 1985-03-12 | General Electric Company | Regulated dc-dc converter using a resonating transformer |
US5038051A (en) * | 1984-05-08 | 1991-08-06 | The United States Of America As Represented By The Secretary Of The Navy | Solid state modulator for microwave transmitters |
GB2164513A (en) | 1984-09-01 | 1986-03-19 | Marconi Co Ltd | A pulse generator |
GB2170663B (en) | 1985-02-02 | 1989-06-14 | Brian Ernest Attwood | Harmonic-resonant power supply |
US4885074A (en) | 1987-02-24 | 1989-12-05 | International Business Machines Corporation | Plasma reactor having segmented electrodes |
US4924191A (en) | 1989-04-18 | 1990-05-08 | Erbtec Engineering, Inc. | Amplifier having digital bias control apparatus |
DE69020076T2 (en) | 1989-09-14 | 1996-03-14 | Hitachi Metals Ltd | High voltage pulse generator circuit and electrostatic precipitator with this circuit. |
JP3283476B2 (en) * | 1989-09-22 | 2002-05-20 | 株式会社日立製作所 | Discharge state fluctuation monitor |
US4992919A (en) | 1989-12-29 | 1991-02-12 | Lee Chu Quon | Parallel resonant converter with zero voltage switching |
US5140510A (en) | 1991-03-04 | 1992-08-18 | Motorola, Inc. | Constant frequency power converter |
FR2674385A1 (en) | 1991-03-22 | 1992-09-25 | Alsthom Gec | GALVANIC ISOLATION DEVICE FOR CONTINUOUS ELECTRIC SIGNALS OR LIKELY TO CONTAIN A CONTINUOUS COMPONENT. |
US6518195B1 (en) * | 1991-06-27 | 2003-02-11 | Applied Materials, Inc. | Plasma reactor using inductive RF coupling, and processes |
US5325021A (en) * | 1992-04-09 | 1994-06-28 | Clemson University | Radio-frequency powered glow discharge device and method with high voltage interface |
US5418707A (en) | 1992-04-13 | 1995-05-23 | The United States Of America As Represented By The United States Department Of Energy | High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs |
US6369576B1 (en) | 1992-07-08 | 2002-04-09 | Texas Instruments Incorporated | Battery pack with monitoring function for use in a battery charging system |
US5392187A (en) | 1992-08-12 | 1995-02-21 | North Carolina State University At Raleigh | Integrated circuit power device with transient responsive current limiting means |
JP3366058B2 (en) | 1992-10-07 | 2003-01-14 | 浩 坂本 | Power supply |
GB9313614D0 (en) | 1993-07-01 | 1993-08-18 | Serck Baker Ltd | Separation apparatus |
US5313481A (en) | 1993-09-29 | 1994-05-17 | The United States Of America As Represented By The United States Department Of Energy | Copper laser modulator driving assembly including a magnetic compression laser |
US5392043A (en) | 1993-10-04 | 1995-02-21 | General Electric Company | Double-rate sampled signal integrator |
US5451846A (en) | 1993-12-14 | 1995-09-19 | Aeg Automation Systems Corporation | Low current compensation control for thyristor armature power supply |
US5483731A (en) | 1994-01-26 | 1996-01-16 | Aeroquip Corporation | Universal hydraulic tool |
DE69628514T2 (en) | 1995-02-17 | 2004-04-29 | Cymer, Inc., San Diego | POWER PULSE GENERATOR WITH ENERGY RECOVERY |
US5656123A (en) | 1995-06-07 | 1997-08-12 | Varian Associates, Inc. | Dual-frequency capacitively-coupled plasma reactor for materials processing |
WO1997013266A2 (en) | 1995-06-19 | 1997-04-10 | The University Of Tennessee Research Corporation | Discharge methods and electrodes for generating plasmas at one atmosphere of pressure, and materials treated therewith |
US6042686A (en) * | 1995-06-30 | 2000-03-28 | Lam Research Corporation | Power segmented electrode |
JP3373704B2 (en) | 1995-08-25 | 2003-02-04 | 三菱電機株式会社 | Insulated gate transistor drive circuit |
US6253704B1 (en) | 1995-10-13 | 2001-07-03 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
WO1997018630A1 (en) | 1995-11-15 | 1997-05-22 | Kardo Syssoev Alexei F | Pulse generating circuits using drift step recovery devices |
IT1289479B1 (en) | 1996-01-26 | 1998-10-15 | Schlafhorst & Co W | CIRCUITAL ARRANGEMENT OF VOLTAGE TRANSFORMATION FOR THE POWER SUPPLY OF A HIGH ELECTRIC USER |
GB9607381D0 (en) | 1996-04-04 | 1996-06-12 | Council Cent Lab Res Councils | Dc power converter |
US5917286A (en) | 1996-05-08 | 1999-06-29 | Advanced Energy Industries, Inc. | Pulsed direct current power supply configurations for generating plasmas |
JP3040358B2 (en) * | 1996-05-24 | 2000-05-15 | 積水化学工業株式会社 | Glow discharge plasma processing method and apparatus |
CA2205817C (en) * | 1996-05-24 | 2004-04-06 | Sekisui Chemical Co., Ltd. | Treatment method in glow-discharge plasma and apparatus thereof |
US5836943A (en) | 1996-08-23 | 1998-11-17 | Team Medical, L.L.C. | Electrosurgical generator |
US5930125A (en) | 1996-08-28 | 1999-07-27 | Siemens Medical Systems, Inc. | Compact solid state klystron power supply |
SE9604814D0 (en) | 1996-12-20 | 1996-12-20 | Scanditronix Medical Ab | Power modulator |
EP0947048B2 (en) | 1996-12-20 | 2012-05-02 | ScandiNova Systems AB | Power modulator |
JPH10223952A (en) * | 1997-02-04 | 1998-08-21 | Nissin Electric Co Ltd | Electric discharge pumping gas laser device |
US6300720B1 (en) | 1997-04-28 | 2001-10-09 | Daniel Birx | Plasma gun and methods for the use thereof |
US6815633B1 (en) * | 1997-06-26 | 2004-11-09 | Applied Science & Technology, Inc. | Inductively-coupled toroidal plasma source |
US6330261B1 (en) * | 1997-07-18 | 2001-12-11 | Cymer, Inc. | Reliable, modular, production quality narrow-band high rep rate ArF excimer laser |
CN1103655C (en) | 1997-10-15 | 2003-03-26 | 东京电子株式会社 | Apparatus and method for utilizing a plasma density gradient to produce a flow of particles |
FR2771563B1 (en) | 1997-11-25 | 2000-02-18 | Dateno Sa | ADJUSTABLE SUPPLY DEVICE FOR KLYSTRON-TYPE RADIO TRANSMISSION TUBE FOR REDUCING ENERGY CONSUMPTION |
WO1999062594A1 (en) | 1998-06-03 | 1999-12-09 | Neurocontrol Corporation | Percutaneous intramuscular stimulation system |
GB2341288B (en) | 1998-06-23 | 2003-12-10 | Eev Ltd | Switching arrangement |
US6642149B2 (en) | 1998-09-16 | 2003-11-04 | Tokyo Electron Limited | Plasma processing method |
US6066901A (en) | 1998-09-17 | 2000-05-23 | First Point Scientific, Inc. | Modulator for generating high voltage pulses |
US6362604B1 (en) | 1998-09-28 | 2002-03-26 | Alpha-Omega Power Technologies, L.L.C. | Electrostatic precipitator slow pulse generating circuit |
JP3496560B2 (en) * | 1999-03-12 | 2004-02-16 | 東京エレクトロン株式会社 | Plasma processing equipment |
US6198761B1 (en) | 1999-05-07 | 2001-03-06 | Lambda Physik Gmbh | Coaxial laser pulser with solid dielectrics |
US6738275B1 (en) | 1999-11-10 | 2004-05-18 | Electromed Internationale Ltee. | High-voltage x-ray generator |
JP2001181830A (en) * | 1999-12-22 | 2001-07-03 | Shin Meiwa Ind Co Ltd | Ion machining apparatus |
US6674836B2 (en) | 2000-01-17 | 2004-01-06 | Kabushiki Kaisha Toshiba | X-ray computer tomography apparatus |
JP2001238470A (en) | 2000-02-21 | 2001-08-31 | Ngk Insulators Ltd | Switching circuit for generating pulse power |
US6205074B1 (en) | 2000-02-29 | 2001-03-20 | Advanced Micro Devices, Inc. | Temperature-compensated bias generator |
US6831377B2 (en) | 2000-05-03 | 2004-12-14 | University Of Southern California | Repetitive power pulse generator with fast rising pulse |
KR100394171B1 (en) | 2000-05-30 | 2003-08-09 | 고범종 | Output device protection circuit for power amplifier |
US7549461B2 (en) * | 2000-06-30 | 2009-06-23 | Alliant Techsystems Inc. | Thermal management system |
JP2002043281A (en) * | 2000-07-19 | 2002-02-08 | Hitachi Ltd | Power source device for generating high frequency ac pulse |
US6483731B1 (en) | 2000-07-31 | 2002-11-19 | Vanner, Inc. | Alexander topology resonance energy conversion and inversion circuit utilizing a series capacitance multi-voltage resonance section |
US7223676B2 (en) | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
US6939434B2 (en) | 2000-08-11 | 2005-09-06 | Applied Materials, Inc. | Externally excited torroidal plasma source with magnetic control of ion distribution |
US7037813B2 (en) | 2000-08-11 | 2006-05-02 | Applied Materials, Inc. | Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage |
US6359542B1 (en) | 2000-08-25 | 2002-03-19 | Motorola, Inc. | Securement for transformer core utilized in a transformer power supply module and method to assemble same |
JP4612947B2 (en) | 2000-09-29 | 2011-01-12 | 日立プラズマディスプレイ株式会社 | Capacitive load driving circuit and plasma display device using the same |
JP4717295B2 (en) * | 2000-10-04 | 2011-07-06 | 株式会社半導体エネルギー研究所 | Dry etching apparatus and etching method |
US6529387B2 (en) | 2001-06-06 | 2003-03-04 | Siemens Medical Solutions Usa. Inc. | Unified power architecture |
GB2378065B (en) | 2001-06-15 | 2004-09-15 | Marconi Applied Technologies | High voltage switching apparatus |
EP1278294B9 (en) | 2001-07-16 | 2010-09-01 | CPAutomation S.A. | An electrical power supply suitable in particular for dc plasma processing |
US6741120B1 (en) | 2001-08-07 | 2004-05-25 | Globespanvirata, Inc. | Low power active filter and method |
WO2003027613A1 (en) | 2001-09-19 | 2003-04-03 | Micro-Epsilon Messtechnik Gmbh & Co. Kg | Circuit for measuring distances travelled |
US7100532B2 (en) | 2001-10-09 | 2006-09-05 | Plasma Control Systems, Llc | Plasma production device and method and RF driver circuit with adjustable duty cycle |
US6855906B2 (en) | 2001-10-16 | 2005-02-15 | Adam Alexander Brailove | Induction plasma reactor |
AU2002335107A1 (en) | 2001-10-19 | 2003-04-28 | Clare Micronix Integrated Systems, Inc. | Method and system for adjusting the voltage of a precharge circuit |
TWI282658B (en) | 2001-10-23 | 2007-06-11 | Delta Electronics Inc | A parallel connection system of DC/AC voltage converter |
US6741484B2 (en) | 2002-01-04 | 2004-05-25 | Scandinova Ab | Power modulator having at least one pulse generating module; multiple cores; and primary windings parallel-connected such that each pulse generating module drives all cores |
US6768621B2 (en) | 2002-01-18 | 2004-07-27 | Solectria Corporation | Contactor feedback and precharge/discharge circuit |
US7354501B2 (en) | 2002-05-17 | 2008-04-08 | Applied Materials, Inc. | Upper chamber for high density plasma CVD |
JP4257770B2 (en) * | 2002-05-31 | 2009-04-22 | 芝浦メカトロニクス株式会社 | Arc interruption circuit, power supply for sputtering and sputtering equipment |
JP2004022822A (en) * | 2002-06-17 | 2004-01-22 | Shibaura Mechatronics Corp | Plasma processing method and device |
JP2004101788A (en) * | 2002-09-09 | 2004-04-02 | Sony Corp | Method of driving plasma display |
US7477529B2 (en) | 2002-11-01 | 2009-01-13 | Honeywell International Inc. | High-voltage power supply |
US7115104B2 (en) | 2002-11-15 | 2006-10-03 | Hill-Rom Services, Inc. | High frequency chest wall oscillation apparatus |
US20040178752A1 (en) | 2002-12-13 | 2004-09-16 | International Rectifier Corporation | Gate driver ASIC for an automotive starter/alternator |
JP2004222485A (en) | 2002-12-27 | 2004-08-05 | Sony Corp | Switching power supply circuit |
DE10306809A1 (en) | 2003-02-18 | 2004-09-02 | Siemens Ag | Operation of a half-bridge, in particular a field-effect transistor half-bridge |
JP2004340036A (en) * | 2003-05-15 | 2004-12-02 | Toyota Motor Corp | Exhaust emission control device |
WO2004103033A1 (en) | 2003-05-15 | 2004-11-25 | Hitachi Medical Corporation | X-ray generation device |
US7247218B2 (en) | 2003-05-16 | 2007-07-24 | Applied Materials, Inc. | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power |
JP4392746B2 (en) | 2003-05-23 | 2010-01-06 | 株式会社日立メディコ | X-ray high voltage device |
US7002443B2 (en) * | 2003-06-25 | 2006-02-21 | Cymer, Inc. | Method and apparatus for cooling magnetic circuit elements |
EP1515430A1 (en) | 2003-09-15 | 2005-03-16 | IEE INTERNATIONAL ELECTRONICS & ENGINEERING S.A. | Mixer for the conversion of radio frequency signals into baseband signals |
US7062310B2 (en) | 2003-10-06 | 2006-06-13 | Tyco Electronics Corporation | Catheter tip electrode assembly and method for fabricating same |
US20070018504A1 (en) | 2003-10-14 | 2007-01-25 | Wiener Scott A | Short duration variable amplitude high voltage pulse generator |
GB2426392B (en) | 2003-12-09 | 2007-05-30 | Nujira Ltd | Transformer based voltage supply |
US20050130620A1 (en) * | 2003-12-16 | 2005-06-16 | Andreas Fischer | Segmented radio frequency electrode apparatus and method for uniformity control |
US7379309B2 (en) | 2004-01-14 | 2008-05-27 | Vanner, Inc. | High-frequency DC-DC converter control |
US7180082B1 (en) | 2004-02-19 | 2007-02-20 | The United States Of America As Represented By The United States Department Of Energy | Method for plasma formation for extreme ultraviolet lithography-theta pinch |
US7095179B2 (en) * | 2004-02-22 | 2006-08-22 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
US7492138B2 (en) | 2004-04-06 | 2009-02-17 | International Rectifier Corporation | Synchronous rectifier circuits and method for utilizing common source inductance of the synchronous FET |
JP2005303099A (en) | 2004-04-14 | 2005-10-27 | Hitachi High-Technologies Corp | Apparatus and method for plasma processing |
US7396746B2 (en) * | 2004-05-24 | 2008-07-08 | Varian Semiconductor Equipment Associates, Inc. | Methods for stable and repeatable ion implantation |
US7243706B2 (en) | 2004-05-28 | 2007-07-17 | Ixys Corporation | Heatsink for power devices |
US7948185B2 (en) | 2004-07-09 | 2011-05-24 | Energetiq Technology Inc. | Inductively-driven plasma light source |
US7307375B2 (en) | 2004-07-09 | 2007-12-11 | Energetiq Technology Inc. | Inductively-driven plasma light source |
JP2006042410A (en) | 2004-07-22 | 2006-02-09 | Toshiba Corp | Snubber device |
EP1779089A4 (en) | 2004-07-28 | 2010-03-24 | Univ Community College Sys Nev | Electrode-less discharge extreme ultraviolet light source |
KR100649508B1 (en) | 2005-02-02 | 2006-11-27 | 권오영 | Hybrid power supply system |
ES2401289T3 (en) | 2005-03-24 | 2013-04-18 | Oerlikon Trading Ag, Trübbach | Vacuum Plasma Generator |
JP5102615B2 (en) * | 2005-04-04 | 2012-12-19 | パナソニック株式会社 | Plasma processing method and apparatus |
US7767433B2 (en) | 2005-04-22 | 2010-08-03 | University Of Southern California | High voltage nanosecond pulse generator using fast recovery diodes for cell electro-manipulation |
EP1878107B1 (en) | 2005-04-26 | 2012-08-15 | Koninklijke Philips Electronics N.V. | Resonant dc/dc converter with zero current switching |
US7615931B2 (en) | 2005-05-02 | 2009-11-10 | International Technology Center | Pulsed dielectric barrier discharge |
US7852008B2 (en) | 2005-05-13 | 2010-12-14 | Panasonic Corporation | Dielectric barrier discharge lamp lighting device |
CN100362619C (en) | 2005-08-05 | 2008-01-16 | 中微半导体设备(上海)有限公司 | RF matching coupling network for vacuum reaction chamber and its configuration method |
US20070114981A1 (en) | 2005-11-21 | 2007-05-24 | Square D Company | Switching power supply system with pre-regulator for circuit or personnel protection devices |
EP1961117B1 (en) | 2005-12-16 | 2014-01-22 | Nicholas Patrick Roland Hill | Resonant circuits |
WO2007082388A1 (en) | 2006-01-23 | 2007-07-26 | Audera International Sales Inc. | Power supply for limited power sources and audio amplifier using power supply |
DE102006024938B3 (en) | 2006-05-23 | 2007-08-30 | Ltb Lasertechnik Berlin Gmbh | High power switching module for direct pulse energy supply of load, has control network that contains delay unit for adjusting offset voltage at switch, and auxiliary diode and capacitance for extraction and storage of auxiliary energy |
US7439716B2 (en) | 2006-09-12 | 2008-10-21 | Semiconductor Components Industries, L.L.C. | DC-DC converter and method |
KR100820171B1 (en) | 2006-11-02 | 2008-04-07 | 한국전기연구원 | Pulse power generator using semiconductor switch |
WO2008118393A1 (en) | 2007-03-23 | 2008-10-02 | University Of Southern California | Compact subnanosecond high voltage pulse generation system for cell electro-manipulation |
US20090004836A1 (en) | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping with enhanced charge neutralization |
DE112007003667A5 (en) | 2007-07-23 | 2010-07-01 | Hüttinger Elektronik GmbH & Co. KG | Plasma supply device |
JP5390230B2 (en) * | 2008-03-31 | 2014-01-15 | 日本碍子株式会社 | Silicon-based thin film deposition apparatus and method |
JP5319150B2 (en) | 2008-03-31 | 2013-10-16 | 東京エレクトロン株式会社 | Plasma processing apparatus, plasma processing method, and computer-readable storage medium |
US8754589B2 (en) | 2008-04-14 | 2014-06-17 | Digtial Lumens Incorporated | Power management unit with temperature protection |
US8093797B2 (en) | 2008-05-01 | 2012-01-10 | Mflex Uk Limited | Electroluminescent displays |
US8115343B2 (en) | 2008-05-23 | 2012-02-14 | University Of Southern California | Nanosecond pulse generator |
WO2009146439A1 (en) | 2008-05-30 | 2009-12-03 | Colorado State University Research Foundation | System, method and apparatus for generating plasma |
EP2144070B1 (en) | 2008-07-11 | 2012-03-21 | Liaisons Electroniques-Mecaniques Lem S.A. | Sensor for high voltage environment |
US8259476B2 (en) | 2008-07-29 | 2012-09-04 | Shmuel Ben-Yaakov | Self-adjusting switched-capacitor converter with multiple target voltages and target voltage ratios |
US8436602B2 (en) * | 2008-08-15 | 2013-05-07 | Technology Reasearch Corporation | Voltage compensation circuit |
TWI380151B (en) * | 2008-09-01 | 2012-12-21 | Grenergy Opto Inc | Primary-side feedback control device with dynamic reference voltage control and method for a power converter |
CN101872272A (en) | 2009-04-23 | 2010-10-27 | 联想(北京)有限公司 | Surface capacitance type touch screen and electronic equipment |
US9287092B2 (en) | 2009-05-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Method and apparatus for controlling ion energy distribution |
US9287086B2 (en) | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
US9435029B2 (en) | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
US8199545B2 (en) | 2009-05-05 | 2012-06-12 | Hamilton Sundstrand Corporation | Power-conversion control system including sliding mode controller and cycloconverter |
WO2010138485A1 (en) | 2009-05-29 | 2010-12-02 | 3M Innovative Properties Company | High speed multi-touch touch device and controller therefor |
US8404598B2 (en) * | 2009-08-07 | 2013-03-26 | Applied Materials, Inc. | Synchronized radio frequency pulsing for plasma etching |
US8222936B2 (en) | 2009-09-13 | 2012-07-17 | International Business Machines Corporation | Phase and frequency detector with output proportional to frequency difference |
US8450985B2 (en) | 2009-09-16 | 2013-05-28 | Solarbridge Technologies, Inc. | Energy recovery circuit |
CN102549724B (en) * | 2009-09-29 | 2015-01-28 | 株式会社东芝 | Substrate processing device |
CA2779747C (en) | 2009-11-16 | 2017-11-07 | Dh Technologies Development Pte. Ltd. | Apparatus for providing power to a multipole in a mass spectrometer |
US8481905B2 (en) | 2010-02-17 | 2013-07-09 | Accuflux Inc. | Shadow band assembly for use with a pyranometer and a shadow band pyranometer incorporating same |
US20130059448A1 (en) | 2011-09-07 | 2013-03-07 | Lam Research Corporation | Pulsed Plasma Chamber in Dual Chamber Configuration |
US8861681B2 (en) | 2010-12-17 | 2014-10-14 | General Electric Company | Method and system for active resonant voltage switching |
US8552902B2 (en) | 2011-05-04 | 2013-10-08 | Sabertek | Methods and apparatus for suppression of low-frequency noise and drift in wireless sensors or receivers |
GB2492597B (en) | 2011-07-08 | 2016-04-06 | E2V Tech Uk Ltd | Transformer with an inverter system and an inverter system comprising the transformer |
US20130024784A1 (en) | 2011-07-18 | 2013-01-24 | Ivy Lifton | Systems and methods for life transition website |
KR20130011812A (en) | 2011-07-22 | 2013-01-30 | 엘에스산전 주식회사 | Method for driving igbt |
US8531822B2 (en) | 2011-07-29 | 2013-09-10 | Hamilton Sundstrand Corporation | Cooling and controlling electronics |
US8879190B1 (en) | 2011-08-08 | 2014-11-04 | Marvell International Ltd. | Method and apparatus for initial self-servo writing |
JP2013069602A (en) | 2011-09-26 | 2013-04-18 | Tokyo Electron Ltd | Microwave processor and workpiece processing method |
JP5358655B2 (en) * | 2011-12-02 | 2013-12-04 | ウシオ電機株式会社 | High voltage pulse generator and discharge excitation gas laser device using the same |
US8963377B2 (en) | 2012-01-09 | 2015-02-24 | Eagle Harbor Technologies Inc. | Efficient IGBT switching |
CN103477550B (en) | 2012-02-23 | 2015-06-17 | 株式会社京三制作所 | Current source inverter device, and method for controlling current source inverter device |
TWI579751B (en) | 2012-03-16 | 2017-04-21 | 原相科技股份有限公司 | Optical touch apparatus capable of detecting displacement and optical touch method thereof |
US9881772B2 (en) | 2012-03-28 | 2018-01-30 | Lam Research Corporation | Multi-radiofrequency impedance control for plasma uniformity tuning |
JP5534365B2 (en) | 2012-06-18 | 2014-06-25 | 株式会社京三製作所 | High frequency power supply device and reflected wave power control method |
US10112251B2 (en) | 2012-07-23 | 2018-10-30 | Illinois Tool Works Inc. | Method and apparatus for providing welding type power |
KR101909571B1 (en) | 2012-08-28 | 2018-10-19 | 어드밴스드 에너지 인더스트리즈 인코포레이티드 | Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and pulsed bias supply; and a virtual front panel |
US20140077611A1 (en) | 2012-09-14 | 2014-03-20 | Henry Todd Young | Capacitor bank, laminated bus, and power supply apparatus |
US20140109886A1 (en) | 2012-10-22 | 2014-04-24 | Transient Plasma Systems, Inc. | Pulsed power systems and methods |
US9535440B2 (en) | 2012-10-30 | 2017-01-03 | Samsung Display Co., Ltd. | DC-DC converter and organic light emitting display device using the same |
US9067788B1 (en) | 2012-11-01 | 2015-06-30 | Rick B. Spielman | Apparatus for highly efficient cold-plasma ozone production |
KR101444734B1 (en) | 2012-11-26 | 2014-09-26 | 한국전기연구원 | Pulse power system with active voltage droop control |
US8773184B1 (en) | 2013-03-13 | 2014-07-08 | Futurewei Technologies, Inc. | Fully integrated differential LC PLL with switched capacitor loop filter |
US20140263181A1 (en) | 2013-03-15 | 2014-09-18 | Jaeyoung Park | Method and apparatus for generating highly repetitive pulsed plasmas |
EP3005220B1 (en) | 2013-06-04 | 2019-09-04 | Eagle Harbor Technologies Inc. | Analog integrator system and method |
US9655221B2 (en) | 2013-08-19 | 2017-05-16 | Eagle Harbor Technologies, Inc. | High frequency, repetitive, compact toroid-generation for radiation production |
JP2017504955A (en) | 2013-11-06 | 2017-02-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Particle generation suppression device by DC bias modulation |
US9706630B2 (en) | 2014-02-28 | 2017-07-11 | Eagle Harbor Technologies, Inc. | Galvanically isolated output variable pulse generator disclosure |
US9960763B2 (en) | 2013-11-14 | 2018-05-01 | Eagle Harbor Technologies, Inc. | High voltage nanosecond pulser |
US10020800B2 (en) * | 2013-11-14 | 2018-07-10 | Eagle Harbor Technologies, Inc. | High voltage nanosecond pulser with variable pulse width and pulse repetition frequency |
US10978955B2 (en) * | 2014-02-28 | 2021-04-13 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
US10892140B2 (en) * | 2018-07-27 | 2021-01-12 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
DE102013227188A1 (en) | 2013-12-27 | 2015-07-02 | Federal-Mogul Wiesbaden Gmbh | Self-lubricating thermoplastic layers with addition of PTFE with polymodal molecular weight |
KR20150087702A (en) | 2014-01-22 | 2015-07-30 | 삼성전자주식회사 | Plasma generating apparatus |
US10790816B2 (en) | 2014-01-27 | 2020-09-29 | Eagle Harbor Technologies, Inc. | Solid-state replacement for tube-based modulators |
US10483089B2 (en) | 2014-02-28 | 2019-11-19 | Eagle Harbor Technologies, Inc. | High voltage resistive output stage circuit |
US9525274B2 (en) | 2014-04-29 | 2016-12-20 | Federal-Mogul Ignition Company | Distribution of corona igniter power signal |
JP2015220929A (en) | 2014-05-20 | 2015-12-07 | 国立大学法人 熊本大学 | Pulse power supply device and design method thereof |
CN104065253B (en) | 2014-06-25 | 2017-12-19 | 台达电子企业管理(上海)有限公司 | Power-converting device, drive device and driving method |
EP3528386B1 (en) * | 2014-07-11 | 2022-12-21 | Eagle Harbor Technologies, Inc. | High voltage nanosecond pulser with variable pulse width and pulse repetition frequency |
KR101660830B1 (en) | 2014-07-16 | 2016-09-29 | 피에스케이 주식회사 | Apparatus for generating plasma using dual plasma source and apparatus for treating substrate comprising the same |
US9929625B2 (en) * | 2014-07-17 | 2018-03-27 | Rolls-Royce Corporation | Negative pressure motor sealing |
US10121641B2 (en) | 2014-07-21 | 2018-11-06 | Lam Research Corporation | Large dynamic range RF voltage sensor and method for voltage mode RF bias application of plasma processing systems |
SI3213608T1 (en) | 2014-10-30 | 2019-11-29 | Tae Tech Inc | Systems and methods for forming and maintaining a plasma in a high performance frc |
US20160182001A1 (en) | 2014-12-19 | 2016-06-23 | Hitachi, Ltd | Common mode noise filter |
US9525412B2 (en) | 2015-02-18 | 2016-12-20 | Reno Technologies, Inc. | Switching circuit |
US10340879B2 (en) | 2015-02-18 | 2019-07-02 | Reno Technologies, Inc. | Switching circuit |
US9729122B2 (en) | 2015-02-18 | 2017-08-08 | Reno Technologies, Inc. | Switching circuit |
US10679823B2 (en) | 2015-02-18 | 2020-06-09 | Reno Technologies, Inc. | Switching circuit |
US9306533B1 (en) | 2015-02-20 | 2016-04-05 | Reno Technologies, Inc. | RF impedance matching network |
US11542927B2 (en) | 2015-05-04 | 2023-01-03 | Eagle Harbor Technologies, Inc. | Low pressure dielectric barrier discharge plasma thruster |
KR101616231B1 (en) * | 2015-11-20 | 2016-04-27 | 주식회사 지웰코리아 | High voltage generation apparatus for generating an ion |
US10373755B2 (en) | 2015-11-30 | 2019-08-06 | Eagle Harbor Technologies, Inc. | High voltage transformer |
WO2018186901A1 (en) | 2017-04-07 | 2018-10-11 | IonQuest LLC | High power resonance pulse ac hedp sputtering source and method for material processing |
US11482404B2 (en) | 2015-12-21 | 2022-10-25 | Ionquest Corp. | Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source |
US11195697B2 (en) * | 2016-01-22 | 2021-12-07 | Spp Technologies Co., Ltd. | Plasma control apparatus |
US9966231B2 (en) * | 2016-02-29 | 2018-05-08 | Lam Research Corporation | Direct current pulsing plasma systems |
US10148186B2 (en) * | 2016-04-12 | 2018-12-04 | Dialog Semiconductor Inc. | Switching power converter with efficient VCC charging |
US20170314133A1 (en) | 2016-04-29 | 2017-11-02 | Retro-Semi Technologies, Llc | Plasma reactor having divided electrodes |
JP6574737B2 (en) * | 2016-05-31 | 2019-09-11 | 東京エレクトロン株式会社 | Matching device and plasma processing apparatus |
US20170358431A1 (en) * | 2016-06-13 | 2017-12-14 | Applied Materials, Inc. | Systems and methods for controlling a voltage waveform at a substrate during plasma processing |
US11004660B2 (en) | 2018-11-30 | 2021-05-11 | Eagle Harbor Technologies, Inc. | Variable output impedance RF generator |
WO2017223118A1 (en) | 2016-06-21 | 2017-12-28 | Eagle Harbor Technologies, Inc. | High voltage pre-pulsing |
US10903047B2 (en) * | 2018-07-27 | 2021-01-26 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
GB2551824A (en) | 2016-06-30 | 2018-01-03 | Univ Nottingham | High frequency high power converter system |
JP6555562B2 (en) * | 2016-07-08 | 2019-08-07 | パナソニックIpマネジメント株式会社 | Plasma discharge device and air purifier |
US10566177B2 (en) * | 2016-08-15 | 2020-02-18 | Applied Materials, Inc. | Pulse shape controller for sputter sources |
CN106384144B (en) | 2016-10-11 | 2019-01-22 | 卓捷创芯科技(深圳)有限公司 | A kind of half-duplex RF ID oscillating maintaining circuit generating pulse by comparator |
US10320373B2 (en) | 2016-10-11 | 2019-06-11 | Eagle Harbor Technologies, Inc. | RF production using nonlinear semiconductor junction capacitance |
US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
US10373804B2 (en) | 2017-02-03 | 2019-08-06 | Applied Materials, Inc. | System for tunable workpiece biasing in a plasma reactor |
WO2018148182A1 (en) | 2017-02-07 | 2018-08-16 | Eagle Harbor Technologies, Inc. | Transformer resonant converter |
EP3832691A1 (en) | 2017-03-31 | 2021-06-09 | Eagle Harbor Technologies, Inc. | Method of plasma processing a substrate and plasma processing chamber |
US10483090B2 (en) | 2017-07-10 | 2019-11-19 | Reno Technologies, Inc. | Restricted capacitor switching |
US10447222B2 (en) | 2017-09-07 | 2019-10-15 | Qorvo Us, Inc. | Dynamic thermal compensation in a power amplifier |
US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
KR20200100643A (en) | 2017-11-17 | 2020-08-26 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | Improved application of modulating supplies in plasma processing systems |
KR20200039840A (en) | 2018-01-22 | 2020-04-16 | 어플라이드 머티어리얼스, 인코포레이티드 | Processing with power edge ring |
EP3732703B1 (en) | 2018-01-22 | 2022-08-31 | Transient Plasma Systems, Inc. | Inductively coupled pulsed rf voltage multiplier |
US10304660B1 (en) | 2018-03-21 | 2019-05-28 | Lam Research Corporation | Multi-level pulsing of DC and RF signals |
US10876241B2 (en) | 2018-03-30 | 2020-12-29 | Midea Group Co., Ltd. | Clothes pre-wash compartment for an appliance |
JP7061918B2 (en) | 2018-04-23 | 2022-05-02 | 東京エレクトロン株式会社 | Plasma etching method and plasma processing equipment |
US10555412B2 (en) * | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
US11302518B2 (en) | 2018-07-27 | 2022-04-12 | Eagle Harbor Technologies, Inc. | Efficient energy recovery in a nanosecond pulser circuit |
US11222767B2 (en) * | 2018-07-27 | 2022-01-11 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
US10607814B2 (en) | 2018-08-10 | 2020-03-31 | Eagle Harbor Technologies, Inc. | High voltage switch with isolated power |
US11476145B2 (en) * | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
TWI783203B (en) | 2019-01-08 | 2022-11-11 | 美商鷹港科技股份有限公司 | A nanosecond pulser circuit |
CN113169026B (en) * | 2019-01-22 | 2024-04-26 | 应用材料公司 | Feedback loop for controlling pulse voltage waveform |
TWI778449B (en) * | 2019-11-15 | 2022-09-21 | 美商鷹港科技股份有限公司 | High voltage pulsing circuit |
-
2019
- 2019-07-26 US US16/523,840 patent/US10892140B2/en active Active
- 2019-07-29 WO PCT/US2019/043933 patent/WO2020023965A1/en unknown
- 2019-07-29 KR KR1020217005999A patent/KR102579260B1/en active IP Right Grant
- 2019-07-29 KR KR1020237029360A patent/KR20230129609A/en not_active Application Discontinuation
- 2019-07-29 TW TW111101768A patent/TWI843981B/en active
- 2019-07-29 WO PCT/US2019/043988 patent/WO2020023974A1/en unknown
- 2019-07-29 US US16/524,950 patent/US10892141B2/en active Active
- 2019-07-29 JP JP2021504453A patent/JP7503047B2/en active Active
- 2019-07-29 JP JP2021504458A patent/JP7038897B2/en active Active
- 2019-07-29 KR KR1020217006005A patent/KR102572562B1/en active Application Filing
- 2019-07-29 KR KR1020237028274A patent/KR20230128133A/en not_active Application Discontinuation
- 2019-07-29 WO PCT/US2019/043932 patent/WO2020023964A1/en unknown
- 2019-07-29 KR KR1020237031086A patent/KR20230137474A/en active Application Filing
- 2019-07-29 JP JP2021504454A patent/JP2021524659A/en active Pending
- 2019-07-29 CN CN201980048964.4A patent/CN115943735A/en active Pending
- 2019-07-29 US US16/525,357 patent/US10659019B2/en active Active
- 2019-07-29 US US16/524,967 patent/US10811230B2/en active Active
- 2019-07-29 EP EP19841903.8A patent/EP3830957A4/en active Pending
- 2019-07-29 TW TW108126858A patent/TWI756551B/en active
- 2019-07-29 EP EP19841651.3A patent/EP3831169A4/en active Pending
- 2019-07-29 US US16/524,926 patent/US10991553B2/en active Active
- 2019-07-29 EP EP19840682.9A patent/EP3830859B1/en active Active
- 2019-07-29 KR KR1020217006001A patent/KR102575498B1/en active IP Right Grant
- 2019-12-19 US US16/721,396 patent/US11075058B2/en active Active
-
2020
- 2020-04-14 US US16/848,830 patent/US11101108B2/en active Active
-
2021
- 2021-01-05 US US17/142,069 patent/US11636998B2/en active Active
- 2021-04-15 US US17/231,923 patent/US11587768B2/en active Active
- 2021-06-25 US US17/359,498 patent/US11551908B2/en active Active
-
2022
- 2022-03-08 JP JP2022035077A patent/JP7324326B2/en active Active
- 2022-09-14 JP JP2022145841A patent/JP7367157B2/en active Active
-
2023
- 2023-10-11 JP JP2023176000A patent/JP2023182762A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3339108A (en) * | 1965-01-28 | 1967-08-29 | Gen Radio Co | Capacitor charging and discharging circuitry |
US20190131110A1 (en) * | 2017-08-25 | 2019-05-02 | Eagle Harbor Technologies, Inc. | Arbitarary waveform generation using nanosecond pulses |
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US11875971B2 (en) | 2018-07-27 | 2024-01-16 | Eagle Harbor Technologies, Inc. | Efficient energy recovery in a nanosecond pulser circuit |
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US10923321B2 (en) | 2019-01-22 | 2021-02-16 | Applied Materials, Inc. | Apparatus and method of generating a pulsed waveform |
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