JP2021521637A5 - - Google Patents

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Publication number
JP2021521637A5
JP2021521637A5 JP2020555174A JP2020555174A JP2021521637A5 JP 2021521637 A5 JP2021521637 A5 JP 2021521637A5 JP 2020555174 A JP2020555174 A JP 2020555174A JP 2020555174 A JP2020555174 A JP 2020555174A JP 2021521637 A5 JP2021521637 A5 JP 2021521637A5
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JP
Japan
Prior art keywords
substrate
precursor
gas
exposing
silanol
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JP2020555174A
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English (en)
Japanese (ja)
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JP2021521637A (ja
JP7205929B2 (ja
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Priority claimed from PCT/US2019/026590 external-priority patent/WO2019199834A1/en
Publication of JP2021521637A publication Critical patent/JP2021521637A/ja
Publication of JP2021521637A5 publication Critical patent/JP2021521637A5/ja
Application granted granted Critical
Publication of JP7205929B2 publication Critical patent/JP7205929B2/ja
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JP2020555174A 2018-04-09 2019-04-09 低容量相互接続用のエアギャップを備えた半導体デバイスを形成する方法 Active JP7205929B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862654760P 2018-04-09 2018-04-09
US62/654,760 2018-04-09
PCT/US2019/026590 WO2019199834A1 (en) 2018-04-09 2019-04-09 Method of forming a semiconductor device with air gaps for low capacitance interconnects

Publications (3)

Publication Number Publication Date
JP2021521637A JP2021521637A (ja) 2021-08-26
JP2021521637A5 true JP2021521637A5 (enExample) 2022-01-17
JP7205929B2 JP7205929B2 (ja) 2023-01-17

Family

ID=68099067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020555174A Active JP7205929B2 (ja) 2018-04-09 2019-04-09 低容量相互接続用のエアギャップを備えた半導体デバイスを形成する方法

Country Status (5)

Country Link
US (2) US11251077B2 (enExample)
JP (1) JP7205929B2 (enExample)
KR (1) KR102740088B1 (enExample)
TW (1) TWI790372B (enExample)
WO (1) WO2019199834A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200232098A1 (en) * 2019-01-22 2020-07-23 Averatek Corporation Pattern formation using catalyst blocker
US11955370B2 (en) * 2020-04-28 2024-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
TWI766438B (zh) * 2020-04-28 2022-06-01 台灣積體電路製造股份有限公司 半導體元件的製造方法
US12494362B2 (en) 2021-03-26 2025-12-09 Tokyo Electron Limited Atomic layer deposition of aluminum oxide films for semiconductor devices using an aluminum alkoxide oxidizer
US12593437B2 (en) 2021-06-23 2026-03-31 Fujian Jinhua Integrated Circuit Co., Ltd. Semiconductor structure and method for forming the same
US11903181B2 (en) * 2021-06-23 2024-02-13 Fujian Jinhua Integrated Circuit Co., Ltd. Semiconductor structure and method for forming the same
US20240242962A1 (en) * 2023-01-12 2024-07-18 Applied Materials, Inc. Bottom thick oxidation growth in high aspect ratio features
JP2024145536A (ja) * 2023-03-31 2024-10-15 東京エレクトロン株式会社 膜形成方法及び基板処理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241687A (ja) 2003-02-07 2004-08-26 Toshiba Corp トレンチキャパシタの形成方法及び半導体装置
US8058138B2 (en) 2008-07-17 2011-11-15 Micron Technology, Inc. Gap processing
US8916435B2 (en) * 2011-09-09 2014-12-23 International Business Machines Corporation Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory
JP5679581B2 (ja) * 2011-12-27 2015-03-04 東京エレクトロン株式会社 成膜方法
KR101402962B1 (ko) * 2012-04-13 2014-06-03 한국생산기술연구원 반도체 금속배선내 에어갭 형성 방법
CN106537576B (zh) * 2014-04-01 2019-08-27 应用材料公司 整合式金属间隔垫与气隙互连
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9520284B1 (en) 2015-11-13 2016-12-13 Varian Semiconductor Equipment Associates, Inc. Ion beam activated directional deposition
US9728447B2 (en) * 2015-11-16 2017-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-barrier deposition for air gap formation
US10224235B2 (en) * 2016-02-05 2019-03-05 Lam Research Corporation Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition
US10037884B2 (en) * 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
KR102545882B1 (ko) * 2017-04-11 2023-06-20 도쿄엘렉트론가부시키가이샤 역행 프로파일들을 갖는 리세스된 피처들을 보이드 없이 충전하는 방법
WO2019033003A1 (en) * 2017-08-11 2019-02-14 Tokyo Electron Limited SELECTIVE FILM DEPOSITION USING HALOGEN DEACTIVATION
KR102601862B1 (ko) * 2017-10-04 2023-11-13 도쿄엘렉트론가부시키가이샤 상호접속부를 위한 루테늄 금속 피처 충전
CN109801880B (zh) * 2017-11-17 2021-05-18 联华电子股份有限公司 动态随机存取存储器的埋入式字符线及其制作方法
US10781519B2 (en) * 2018-06-18 2020-09-22 Tokyo Electron Limited Method and apparatus for processing substrate

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