JP2023513110A5 - - Google Patents
Info
- Publication number
- JP2023513110A5 JP2023513110A5 JP2022547101A JP2022547101A JP2023513110A5 JP 2023513110 A5 JP2023513110 A5 JP 2023513110A5 JP 2022547101 A JP2022547101 A JP 2022547101A JP 2022547101 A JP2022547101 A JP 2022547101A JP 2023513110 A5 JP2023513110 A5 JP 2023513110A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- reactant
- etching
- zro2
- ale process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062969567P | 2020-02-03 | 2020-02-03 | |
| US62/969,567 | 2020-02-03 | ||
| PCT/US2021/016076 WO2021158482A1 (en) | 2020-02-03 | 2021-02-01 | Method for using ultra-thin etch stop layers in selective atomic layer etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023513110A JP2023513110A (ja) | 2023-03-30 |
| JP2023513110A5 true JP2023513110A5 (enExample) | 2024-02-02 |
Family
ID=77062139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022547101A Pending JP2023513110A (ja) | 2020-02-03 | 2021-02-01 | 選択的原子層エッチングにおける超薄型エッチストップ層の使用方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20210242031A1 (enExample) |
| JP (1) | JP2023513110A (enExample) |
| KR (1) | KR20220134582A (enExample) |
| CN (1) | CN115428130A (enExample) |
| TW (1) | TW202143314A (enExample) |
| WO (1) | WO2021158482A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11373878B2 (en) * | 2020-07-16 | 2022-06-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Technique for semiconductor manufacturing |
| WO2022169509A1 (en) * | 2021-02-03 | 2022-08-11 | Lam Research Corporation | Etch selectivity control in atomic layer etching |
| US12615980B2 (en) | 2021-03-18 | 2026-04-28 | Lam Research Corporation | Etching of indium gallium zinc oxide |
| US20240124776A1 (en) * | 2022-10-14 | 2024-04-18 | Laurence E. Spurgeon | High performance semiconductor grade dimethylaluminum chloride |
| WO2025076005A1 (en) * | 2023-10-04 | 2025-04-10 | Lam Research Corporation | Selectivity in thermal etch processes through surface passivation |
| US20250285886A1 (en) * | 2024-03-11 | 2025-09-11 | Egtm Co., Ltd. | Method of treating thin films and method of manufacturing memory device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6720259B2 (en) * | 2001-10-02 | 2004-04-13 | Genus, Inc. | Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition |
| US10121699B2 (en) * | 2015-08-05 | 2018-11-06 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
| KR102652512B1 (ko) * | 2015-11-10 | 2024-03-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 에칭 반응물 및 이를 사용한 플라즈마-부재 옥사이드 에칭 공정 |
| US10229837B2 (en) * | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
| US9793135B1 (en) * | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
| US10208383B2 (en) * | 2017-02-09 | 2019-02-19 | The Regents Of The University Of Colorado, A Body Corporate | Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination |
| US10546748B2 (en) * | 2017-02-17 | 2020-01-28 | Lam Research Corporation | Tin oxide films in semiconductor device manufacturing |
| US10283353B2 (en) * | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
| US11217456B2 (en) * | 2018-03-26 | 2022-01-04 | Intel Corporation | Selective etching and controlled atomic layer etching of transition metal oxide films for device fabrication |
-
2021
- 2021-02-01 WO PCT/US2021/016076 patent/WO2021158482A1/en not_active Ceased
- 2021-02-01 CN CN202180012310.3A patent/CN115428130A/zh active Pending
- 2021-02-01 KR KR1020227029387A patent/KR20220134582A/ko not_active Ceased
- 2021-02-01 US US17/164,649 patent/US20210242031A1/en not_active Abandoned
- 2021-02-01 JP JP2022547101A patent/JP2023513110A/ja active Pending
- 2021-02-03 TW TW110103982A patent/TW202143314A/zh unknown
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