JP2018182325A5 - - Google Patents
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- Publication number
- JP2018182325A5 JP2018182325A5 JP2018076139A JP2018076139A JP2018182325A5 JP 2018182325 A5 JP2018182325 A5 JP 2018182325A5 JP 2018076139 A JP2018076139 A JP 2018076139A JP 2018076139 A JP2018076139 A JP 2018076139A JP 2018182325 A5 JP2018182325 A5 JP 2018182325A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silanol
- concave feature
- substrate
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 26
- 238000000034 method Methods 0.000 claims 23
- 239000000758 substrate Substances 0.000 claims 16
- 238000000151 deposition Methods 0.000 claims 13
- 239000000463 material Substances 0.000 claims 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims 10
- 239000011248 coating agent Substances 0.000 claims 10
- 238000000576 coating method Methods 0.000 claims 10
- 239000003054 catalyst Substances 0.000 claims 9
- 229910052736 halogen Inorganic materials 0.000 claims 9
- 150000002367 halogens Chemical class 0.000 claims 9
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims 9
- 230000008021 deposition Effects 0.000 claims 7
- 239000003795 chemical substances by application Substances 0.000 claims 4
- 230000009849 deactivation Effects 0.000 claims 4
- 230000003301 hydrolyzing effect Effects 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- MBMITMZVBNZJTQ-UHFFFAOYSA-N hydroxy-bis[(2-methylpropan-2-yl)oxy]-propan-2-yloxysilane Chemical compound CC(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C MBMITMZVBNZJTQ-UHFFFAOYSA-N 0.000 claims 3
- ORJFXWYTRPGGRK-UHFFFAOYSA-N hydroxy-tris(2-methylbutan-2-yloxy)silane Chemical compound CCC(C)(C)O[Si](O)(OC(C)(C)CC)OC(C)(C)CC ORJFXWYTRPGGRK-UHFFFAOYSA-N 0.000 claims 3
- HLDBBQREZCVBMA-UHFFFAOYSA-N hydroxy-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C HLDBBQREZCVBMA-UHFFFAOYSA-N 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 230000003647 oxidation Effects 0.000 claims 3
- 238000007254 oxidation reaction Methods 0.000 claims 3
- 238000003672 processing method Methods 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762484343P | 2017-04-11 | 2017-04-11 | |
| US62/484,343 | 2017-04-11 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018182325A JP2018182325A (ja) | 2018-11-15 |
| JP2018182325A5 true JP2018182325A5 (enExample) | 2021-05-20 |
| JP7113651B2 JP7113651B2 (ja) | 2022-08-05 |
Family
ID=63710405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018076139A Active JP7113651B2 (ja) | 2017-04-11 | 2018-04-11 | 逆行的なプロファイルを有する凹状フィーチャのボイドのない充填方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10453737B2 (enExample) |
| JP (1) | JP7113651B2 (enExample) |
| KR (1) | KR102545882B1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7210092B2 (ja) * | 2017-05-15 | 2023-01-23 | 東京エレクトロン株式会社 | 高度なパターン形成用途のためのインサイチュでの選択的堆積及びエッチング |
| TWI790372B (zh) * | 2018-04-09 | 2023-01-21 | 日商東京威力科創股份有限公司 | 具有用於低電容內連線之氣隙的半導體元件形成方法 |
| US20200232098A1 (en) * | 2019-01-22 | 2020-07-23 | Averatek Corporation | Pattern formation using catalyst blocker |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0370775B1 (en) * | 1988-11-21 | 1996-06-12 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| US6355567B1 (en) * | 1999-06-30 | 2002-03-12 | International Business Machines Corporation | Retrograde openings in thin films |
| JP5290488B2 (ja) | 2000-09-28 | 2013-09-18 | プレジデント アンド フェロウズ オブ ハーバード カレッジ | 酸化物、ケイ酸塩及びリン酸塩の気相成長 |
| KR100996816B1 (ko) | 2002-03-28 | 2010-11-25 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 이산화규소 나노라미네이트의 증기증착 |
| US7098128B2 (en) * | 2004-09-01 | 2006-08-29 | Micron Technology, Inc. | Method for filling electrically different features |
| US7625820B1 (en) * | 2006-06-21 | 2009-12-01 | Novellus Systems, Inc. | Method of selective coverage of high aspect ratio structures with a conformal film |
| KR20090095391A (ko) * | 2008-03-05 | 2009-09-09 | 주식회사 하이닉스반도체 | 반도체 소자의 컨택 플러그 형성방법 |
| JP5131240B2 (ja) * | 2009-04-09 | 2013-01-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
| US9349637B2 (en) * | 2014-08-21 | 2016-05-24 | Lam Research Corporation | Method for void-free cobalt gap fill |
-
2018
- 2018-04-11 US US15/950,611 patent/US10453737B2/en active Active
- 2018-04-11 KR KR1020180042205A patent/KR102545882B1/ko active Active
- 2018-04-11 JP JP2018076139A patent/JP7113651B2/ja active Active
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