JP6364368B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6364368B2 JP6364368B2 JP2015051995A JP2015051995A JP6364368B2 JP 6364368 B2 JP6364368 B2 JP 6364368B2 JP 2015051995 A JP2015051995 A JP 2015051995A JP 2015051995 A JP2015051995 A JP 2015051995A JP 6364368 B2 JP6364368 B2 JP 6364368B2
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- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000005530 etching Methods 0.000 claims description 80
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 66
- 229910052799 carbon Inorganic materials 0.000 claims description 66
- 239000007789 gas Substances 0.000 claims description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 56
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 56
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 17
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 15
- 239000000460 chlorine Substances 0.000 claims description 14
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 12
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052794 bromium Inorganic materials 0.000 claims description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 11
- 229910052801 chlorine Inorganic materials 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 40
- 125000004429 atom Chemical group 0.000 description 15
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 8
- 239000011162 core material Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Description
図1および図2は、第1実施形態の半導体装置の製造方法を示す断面図である。本方法においては、二重側壁転写プロセスが実行される。本方法は例えば、NANDフラッシュメモリ用のL/S(ラインアンドスペース)パターンを形成するために使用される。
図10は、第2実施形態の半導体装置の製造方法を示す断面図である。本方法においては、炭素含有率の変化によるエッチングレートの変化を利用して低誘電率膜(low−k膜)のエッチングが行われる。low−k膜は、通常のシリコン酸化膜よりも低い誘電率を有する絶縁膜である。
4:マスク層、5:レジスト膜、5a:レジストパターン、
6:側壁膜、6a:側壁パターン、
11:基板、12:配線層、12a:配線、
13:第1の被加工膜、14:第2の被加工膜、15:マスク層
Claims (7)
- 基板上に、炭素を含有する第1膜を形成し、
前記第1膜上に、第1の炭素含有率を有する第1のシリコン酸化膜を形成し、
前記第1のシリコン酸化膜上に、前記第1の炭素含有率と異なる第2の炭素含有率を有する第2のシリコン酸化膜を形成し、
臭素または塩素を含有するガスを使用して、前記第1または第2のシリコン酸化膜を選択的にエッチングし、
前記エッチング後に前記第1膜を加工する、
ことを含む半導体装置の製造方法。 - 前記第2の炭素含有率は、前記第1の炭素含有率よりも低く、
前記エッチングでは、前記第2のシリコン酸化膜をマスクとして使用して、前記第1のシリコン酸化膜をエッチングし、
前記加工では、前記第1および第2のシリコン酸化膜の少なくともいずれかをマスクとして使用して、前記第1膜を加工する、
請求項1に記載の半導体装置の製造方法。 - 前記第2のシリコン酸化膜は、炭素を含有する、請求項1または2に記載の半導体装置の製造方法。
- 基板上に、第1の炭素含有率で炭素を含有する第1のシリコン酸化膜を形成し、
前記第1のシリコン酸化膜上に、前記第1の炭素含有率と異なる第2の炭素含有率で炭素を含有する第2のシリコン酸化膜を形成し、
臭素または塩素を含有するガスを使用して、前記第1または第2のシリコン酸化膜を選択的にエッチングする、
ことを含む半導体装置の製造方法。 - 前記第2の炭素含有率は、前記第1の炭素含有率よりも高く、
前記エッチングでは、前記第1のシリコン酸化膜をストッパとして使用して、前記第2のシリコン酸化膜をエッチングする、
請求項4に記載の半導体装置の製造方法。 - 前記第1および第2の炭素含有率の一方は、5%未満であり、
前記第1および第2の炭素含有率の他方は、5%以上である、
請求項1から5のいずれか1項に記載の半導体装置の製造方法。 - 前記ガスは、臭化水素ガス、塩化水素ガス、臭素ガス、または塩素ガスを含有する、請求項1から6のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (2)
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JP2015051995A JP6364368B2 (ja) | 2015-03-16 | 2015-03-16 | 半導体装置の製造方法 |
US14/833,706 US20160276166A1 (en) | 2015-03-16 | 2015-08-24 | Method of manufacturing semiconductor device |
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JP2015051995A JP6364368B2 (ja) | 2015-03-16 | 2015-03-16 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2016174013A JP2016174013A (ja) | 2016-09-29 |
JP6364368B2 true JP6364368B2 (ja) | 2018-07-25 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015051995A Active JP6364368B2 (ja) | 2015-03-16 | 2015-03-16 | 半導体装置の製造方法 |
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US (1) | US20160276166A1 (ja) |
JP (1) | JP6364368B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2021040008A (ja) * | 2019-09-02 | 2021-03-11 | キオクシア株式会社 | 半導体装置の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999052135A1 (en) * | 1998-04-02 | 1999-10-14 | Applied Materials, Inc. | Method for etching low k dielectrics |
JP2001110780A (ja) * | 1999-10-07 | 2001-04-20 | Nec Corp | 半導体装置の製造方法 |
JP4014456B2 (ja) * | 2002-06-19 | 2007-11-28 | 株式会社日立ハイテクノロジーズ | エッチング処理方法 |
JP2004071774A (ja) * | 2002-08-05 | 2004-03-04 | Tokyo Electron Ltd | マルチチャンバシステムを用いたプラズマ処理方法 |
JP5391594B2 (ja) * | 2008-07-02 | 2014-01-15 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
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2015
- 2015-03-16 JP JP2015051995A patent/JP6364368B2/ja active Active
- 2015-08-24 US US14/833,706 patent/US20160276166A1/en not_active Abandoned
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JP2016174013A (ja) | 2016-09-29 |
US20160276166A1 (en) | 2016-09-22 |
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