JP7205929B2 - 低容量相互接続用のエアギャップを備えた半導体デバイスを形成する方法 - Google Patents

低容量相互接続用のエアギャップを備えた半導体デバイスを形成する方法 Download PDF

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JP7205929B2
JP7205929B2 JP2020555174A JP2020555174A JP7205929B2 JP 7205929 B2 JP7205929 B2 JP 7205929B2 JP 2020555174 A JP2020555174 A JP 2020555174A JP 2020555174 A JP2020555174 A JP 2020555174A JP 7205929 B2 JP7205929 B2 JP 7205929B2
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substrate
precursor
gas
exposing
silanol
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JP2021521637A (ja
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タピリー，カンダバラ
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Tokyo Electron Ltd
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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  • Chemical & Material Sciences (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2020555174A 2018-04-09 2019-04-09 低容量相互接続用のエアギャップを備えた半導体デバイスを形成する方法 Active JP7205929B2 (ja)

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US201862654760P 2018-04-09 2018-04-09
US62/654,760 2018-04-09
PCT/US2019/026590 WO2019199834A1 (en) 2018-04-09 2019-04-09 Method of forming a semiconductor device with air gaps for low capacitance interconnects

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JP2021521637A5 JP2021521637A5 (enExample) 2022-01-17
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US (2) US11251077B2 (enExample)
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KR (1) KR102740088B1 (enExample)
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WO (1) WO2019199834A1 (enExample)

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US11955370B2 (en) * 2020-04-28 2024-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
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US12494362B2 (en) 2021-03-26 2025-12-09 Tokyo Electron Limited Atomic layer deposition of aluminum oxide films for semiconductor devices using an aluminum alkoxide oxidizer
US12593437B2 (en) 2021-06-23 2026-03-31 Fujian Jinhua Integrated Circuit Co., Ltd. Semiconductor structure and method for forming the same
US11903181B2 (en) * 2021-06-23 2024-02-13 Fujian Jinhua Integrated Circuit Co., Ltd. Semiconductor structure and method for forming the same
US20240242962A1 (en) * 2023-01-12 2024-07-18 Applied Materials, Inc. Bottom thick oxidation growth in high aspect ratio features
JP2024145536A (ja) * 2023-03-31 2024-10-15 東京エレクトロン株式会社 膜形成方法及び基板処理装置

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US20190157274A1 (en) 2017-11-17 2019-05-23 United Microelectronics Corp. Buried word line of a dynamic random access memory and method for fabricating the same

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JP2021521637A (ja) 2021-08-26
US11251077B2 (en) 2022-02-15
US11646227B2 (en) 2023-05-09
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