JP7205929B2 - 低容量相互接続用のエアギャップを備えた半導体デバイスを形成する方法 - Google Patents

低容量相互接続用のエアギャップを備えた半導体デバイスを形成する方法 Download PDF

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JP7205929B2
JP7205929B2 JP2020555174A JP2020555174A JP7205929B2 JP 7205929 B2 JP7205929 B2 JP 7205929B2 JP 2020555174 A JP2020555174 A JP 2020555174A JP 2020555174 A JP2020555174 A JP 2020555174A JP 7205929 B2 JP7205929 B2 JP 7205929B2
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substrate
precursor
gas
exposing
silanol
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JPWO2019199834A5 (enExample
JP2021521637A (ja
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タピリー，カンダバラ
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2020555174A 2018-04-09 2019-04-09 低容量相互接続用のエアギャップを備えた半導体デバイスを形成する方法 Active JP7205929B2 (ja)

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US201862654760P 2018-04-09 2018-04-09
US62/654,760 2018-04-09
PCT/US2019/026590 WO2019199834A1 (en) 2018-04-09 2019-04-09 Method of forming a semiconductor device with air gaps for low capacitance interconnects

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JPWO2019199834A5 JPWO2019199834A5 (enExample) 2022-01-17
JP7205929B2 true JP7205929B2 (ja) 2023-01-17

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WO2020154294A1 (en) * 2019-01-22 2020-07-30 Averatek Corporation Pattern formation using catalyst blocker
TWI766438B (zh) * 2020-04-28 2022-06-01 台灣積體電路製造股份有限公司 半導體元件的製造方法
US11955370B2 (en) * 2020-04-28 2024-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
WO2022203969A1 (en) 2021-03-26 2022-09-29 Tokyo Electron Limited Atomic layer deposition of aluminum oxide films for semiconductor devices using an aluminum alkoxide oxidizer
US11903181B2 (en) * 2021-06-23 2024-02-13 Fujian Jinhua Integrated Circuit Co., Ltd. Semiconductor structure and method for forming the same
JP2024145536A (ja) * 2023-03-31 2024-10-15 東京エレクトロン株式会社 膜形成方法及び基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120040534A1 (en) 2008-07-17 2012-02-16 Micron Technology, Inc. Gap processing
US9520284B1 (en) 2015-11-13 2016-12-13 Varian Semiconductor Equipment Associates, Inc. Ion beam activated directional deposition
US20170229337A1 (en) 2016-02-05 2017-08-10 Lam Research Corporation Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition
US20190157274A1 (en) 2017-11-17 2019-05-23 United Microelectronics Corp. Buried word line of a dynamic random access memory and method for fabricating the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241687A (ja) * 2003-02-07 2004-08-26 Toshiba Corp トレンチキャパシタの形成方法及び半導体装置
US8916435B2 (en) * 2011-09-09 2014-12-23 International Business Machines Corporation Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory
JP5679581B2 (ja) * 2011-12-27 2015-03-04 東京エレクトロン株式会社 成膜方法
KR101402962B1 (ko) 2012-04-13 2014-06-03 한국생산기술연구원 반도체 금속배선내 에어갭 형성 방법
KR102312269B1 (ko) * 2014-04-01 2021-10-12 어플라이드 머티어리얼스, 인코포레이티드 집적된 금속 스페이서 및 에어 갭 인터커넥트
US9159606B1 (en) * 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9728447B2 (en) 2015-11-16 2017-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-barrier deposition for air gap formation
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
JP7113651B2 (ja) * 2017-04-11 2022-08-05 東京エレクトロン株式会社 逆行的なプロファイルを有する凹状フィーチャのボイドのない充填方法
JP7250397B2 (ja) * 2017-08-11 2023-04-03 東京エレクトロン株式会社 ハロゲン不活性化を使用した選択的膜堆積
KR102601862B1 (ko) * 2017-10-04 2023-11-13 도쿄엘렉트론가부시키가이샤 상호접속부를 위한 루테늄 금속 피처 충전
US10781519B2 (en) * 2018-06-18 2020-09-22 Tokyo Electron Limited Method and apparatus for processing substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120040534A1 (en) 2008-07-17 2012-02-16 Micron Technology, Inc. Gap processing
US9520284B1 (en) 2015-11-13 2016-12-13 Varian Semiconductor Equipment Associates, Inc. Ion beam activated directional deposition
US20170229337A1 (en) 2016-02-05 2017-08-10 Lam Research Corporation Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition
US20190157274A1 (en) 2017-11-17 2019-05-23 United Microelectronics Corp. Buried word line of a dynamic random access memory and method for fabricating the same

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