TWI790372B - 具有用於低電容內連線之氣隙的半導體元件形成方法 - Google Patents

具有用於低電容內連線之氣隙的半導體元件形成方法 Download PDF

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TWI790372B
TWI790372B TW108112305A TW108112305A TWI790372B TW I790372 B TWI790372 B TW I790372B TW 108112305 A TW108112305 A TW 108112305A TW 108112305 A TW108112305 A TW 108112305A TW I790372 B TWI790372 B TW I790372B
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substrate
precursor
gas
processing method
exposing
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TW108112305A
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Chinese (zh)
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TW202003900A (zh
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坎達巴拉 泰伯利
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/76841—Barrier, adhesion or liner layers
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    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
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  • Manufacturing & Machinery (AREA)
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  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW108112305A 2018-04-09 2019-04-09 具有用於低電容內連線之氣隙的半導體元件形成方法 TWI790372B (zh)

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US201862654760P 2018-04-09 2018-04-09
US62/654,760 2018-04-09

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TW202003900A TW202003900A (zh) 2020-01-16
TWI790372B true TWI790372B (zh) 2023-01-21

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US (2) US11251077B2 (enExample)
JP (1) JP7205929B2 (enExample)
KR (1) KR102740088B1 (enExample)
TW (1) TWI790372B (enExample)
WO (1) WO2019199834A1 (enExample)

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WO2020154294A1 (en) * 2019-01-22 2020-07-30 Averatek Corporation Pattern formation using catalyst blocker
TWI766438B (zh) * 2020-04-28 2022-06-01 台灣積體電路製造股份有限公司 半導體元件的製造方法
US11955370B2 (en) * 2020-04-28 2024-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
WO2022203969A1 (en) 2021-03-26 2022-09-29 Tokyo Electron Limited Atomic layer deposition of aluminum oxide films for semiconductor devices using an aluminum alkoxide oxidizer
US11903181B2 (en) * 2021-06-23 2024-02-13 Fujian Jinhua Integrated Circuit Co., Ltd. Semiconductor structure and method for forming the same
JP2024145536A (ja) * 2023-03-31 2024-10-15 東京エレクトロン株式会社 膜形成方法及び基板処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120040534A1 (en) * 2008-07-17 2012-02-16 Micron Technology, Inc. Gap processing
US20140070293A1 (en) * 2011-09-09 2014-03-13 International Business Machines Corporation Self-aligned bottom plate for metal high-k dielectric metal insulator metal (mim) embedded dynamic random access memory
US9159606B1 (en) * 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US20170358481A1 (en) * 2015-11-16 2017-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-Barrier Deposition for Air Gap Formation
TW201804567A (zh) * 2014-04-01 2018-02-01 應用材料股份有限公司 形成具有氣隙之半導體元件的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241687A (ja) * 2003-02-07 2004-08-26 Toshiba Corp トレンチキャパシタの形成方法及び半導体装置
JP5679581B2 (ja) * 2011-12-27 2015-03-04 東京エレクトロン株式会社 成膜方法
KR101402962B1 (ko) 2012-04-13 2014-06-03 한국생산기술연구원 반도체 금속배선내 에어갭 형성 방법
US9520284B1 (en) * 2015-11-13 2016-12-13 Varian Semiconductor Equipment Associates, Inc. Ion beam activated directional deposition
US10224235B2 (en) * 2016-02-05 2019-03-05 Lam Research Corporation Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
JP7113651B2 (ja) * 2017-04-11 2022-08-05 東京エレクトロン株式会社 逆行的なプロファイルを有する凹状フィーチャのボイドのない充填方法
JP7250397B2 (ja) * 2017-08-11 2023-04-03 東京エレクトロン株式会社 ハロゲン不活性化を使用した選択的膜堆積
KR102601862B1 (ko) * 2017-10-04 2023-11-13 도쿄엘렉트론가부시키가이샤 상호접속부를 위한 루테늄 금속 피처 충전
CN109801880B (zh) * 2017-11-17 2021-05-18 联华电子股份有限公司 动态随机存取存储器的埋入式字符线及其制作方法
US10781519B2 (en) * 2018-06-18 2020-09-22 Tokyo Electron Limited Method and apparatus for processing substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120040534A1 (en) * 2008-07-17 2012-02-16 Micron Technology, Inc. Gap processing
US20140070293A1 (en) * 2011-09-09 2014-03-13 International Business Machines Corporation Self-aligned bottom plate for metal high-k dielectric metal insulator metal (mim) embedded dynamic random access memory
TW201804567A (zh) * 2014-04-01 2018-02-01 應用材料股份有限公司 形成具有氣隙之半導體元件的方法
US9159606B1 (en) * 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US20170358481A1 (en) * 2015-11-16 2017-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-Barrier Deposition for Air Gap Formation

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