JP2020520125A5 - - Google Patents

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Publication number
JP2020520125A5
JP2020520125A5 JP2019563215A JP2019563215A JP2020520125A5 JP 2020520125 A5 JP2020520125 A5 JP 2020520125A5 JP 2019563215 A JP2019563215 A JP 2019563215A JP 2019563215 A JP2019563215 A JP 2019563215A JP 2020520125 A5 JP2020520125 A5 JP 2020520125A5
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JP
Japan
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substrate
metal
gas
exposed
exposing
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JP2019563215A
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Japanese (ja)
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JP7210092B2 (ja
JP2020520125A (ja
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Priority claimed from PCT/US2018/032743 external-priority patent/WO2018213295A1/en
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Priority to JP2022126823A priority Critical patent/JP7459420B2/ja
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JP2019563215A 2017-05-15 2018-05-15 高度なパターン形成用途のためのインサイチュでの選択的堆積及びエッチング Active JP7210092B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022126823A JP7459420B2 (ja) 2017-05-15 2022-08-09 高度なパターン形成用途のためのインサイチュでの選択的堆積及びエッチング

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762506299P 2017-05-15 2017-05-15
US62/506,299 2017-05-15
US201762528061P 2017-07-01 2017-07-01
US62/528,061 2017-07-01
PCT/US2018/032743 WO2018213295A1 (en) 2017-05-15 2018-05-15 In-situ selective deposition and etching for advanced patterning applications

Related Child Applications (1)

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JP2022126823A Division JP7459420B2 (ja) 2017-05-15 2022-08-09 高度なパターン形成用途のためのインサイチュでの選択的堆積及びエッチング

Publications (3)

Publication Number Publication Date
JP2020520125A JP2020520125A (ja) 2020-07-02
JP2020520125A5 true JP2020520125A5 (enExample) 2021-04-15
JP7210092B2 JP7210092B2 (ja) 2023-01-23

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JP2019563215A Active JP7210092B2 (ja) 2017-05-15 2018-05-15 高度なパターン形成用途のためのインサイチュでの選択的堆積及びエッチング
JP2022126823A Active JP7459420B2 (ja) 2017-05-15 2022-08-09 高度なパターン形成用途のためのインサイチュでの選択的堆積及びエッチング

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JP2022126823A Active JP7459420B2 (ja) 2017-05-15 2022-08-09 高度なパターン形成用途のためのインサイチュでの選択的堆積及びエッチング

Country Status (5)

Country Link
US (1) US10529584B2 (enExample)
JP (2) JP7210092B2 (enExample)
KR (3) KR102553117B1 (enExample)
TW (1) TWI801385B (enExample)
WO (1) WO2018213295A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3503164A1 (en) * 2017-12-21 2019-06-26 IMEC vzw Selective deposition of metal-organic frameworks
TWI792002B (zh) * 2019-06-11 2023-02-11 美商應用材料股份有限公司 使用氟及金屬鹵化物來蝕刻金屬氧化物
EP3919979A1 (en) 2020-06-02 2021-12-08 Imec VZW Resistless patterning mask
US12057318B2 (en) 2020-09-29 2024-08-06 Changxin Memory Technologies, Inc. Method for forming film layer
KR20240006268A (ko) 2022-07-06 2024-01-15 에스케이스페셜티 주식회사 금속 산화막의 원자층 식각 방법
KR20240112584A (ko) 2023-01-12 2024-07-19 에스케이스페셜티 주식회사 원자층 식각 방법

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US4902645A (en) 1987-08-24 1990-02-20 Fujitsu Limited Method of selectively forming a silicon-containing metal layer
KR920003555B1 (ko) * 1989-11-13 1992-05-04 이시영 정수기
JP3334911B2 (ja) * 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
JPH0758712B2 (ja) * 1993-02-18 1995-06-21 日本電気株式会社 配線の形成方法
JPH06275529A (ja) * 1993-03-22 1994-09-30 Hitachi Ltd 化合物半導体装置の製造方法
US7157385B2 (en) * 2003-09-05 2007-01-02 Micron Technology, Inc. Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry
US20040198069A1 (en) * 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
CN101048531A (zh) * 2004-07-07 2007-10-03 通用电气公司 基材上的保护涂层及其制备方法
JP5719138B2 (ja) * 2009-12-22 2015-05-13 株式会社日立国際電気 半導体装置の製造方法および基板処理方法
US8293658B2 (en) * 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
US20140051256A1 (en) 2012-08-15 2014-02-20 Lam Research Corporation Etch with mixed mode pulsing
CN103681269B (zh) * 2012-09-03 2016-06-29 中芯国际集成电路制造(上海)有限公司 选择性形成高k介质层的方法
US8841182B1 (en) * 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
TW201525173A (zh) * 2013-12-09 2015-07-01 Applied Materials Inc 選擇性層沉積之方法
US9583401B2 (en) 2014-02-12 2017-02-28 International Business Machines Corporation Nano deposition and ablation for the repair and fabrication of integrated circuits
JP6243290B2 (ja) * 2014-05-01 2017-12-06 東京エレクトロン株式会社 成膜方法及び成膜装置
WO2016100873A1 (en) * 2014-12-18 2016-06-23 The Regents Of The University Of Colorado, A Body Corporate Novel methods of atomic layer etching (ale) using sequential, self-limiting thermal reactions
US10971372B2 (en) * 2015-06-26 2021-04-06 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
US10566185B2 (en) * 2015-08-05 2020-02-18 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
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JP7113651B2 (ja) * 2017-04-11 2022-08-05 東京エレクトロン株式会社 逆行的なプロファイルを有する凹状フィーチャのボイドのない充填方法

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