JP2019186322A5 - - Google Patents
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- Publication number
- JP2019186322A5 JP2019186322A5 JP2018073189A JP2018073189A JP2019186322A5 JP 2019186322 A5 JP2019186322 A5 JP 2019186322A5 JP 2018073189 A JP2018073189 A JP 2018073189A JP 2018073189 A JP2018073189 A JP 2018073189A JP 2019186322 A5 JP2019186322 A5 JP 2019186322A5
- Authority
- JP
- Japan
- Prior art keywords
- work piece
- target
- film
- cycles
- equal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims 21
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 17
- 229910052707 ruthenium Inorganic materials 0.000 claims 17
- 230000001681 protective effect Effects 0.000 claims 14
- 238000005530 etching Methods 0.000 claims 11
- 239000007789 gas Substances 0.000 claims 5
- 238000003672 processing method Methods 0.000 claims 4
- 229920006395 saturated elastomer Polymers 0.000 claims 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 239000000460 chlorine Substances 0.000 claims 3
- 229910052801 chlorine Inorganic materials 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 238000009832 plasma treatment Methods 0.000 claims 3
- 239000002243 precursor Substances 0.000 claims 3
- 239000002994 raw material Substances 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018073189A JP7077108B2 (ja) | 2018-04-05 | 2018-04-05 | 被加工物の処理方法 |
| TW108111465A TWI781309B (zh) | 2018-04-05 | 2019-04-01 | 被加工物之處理方法 |
| US16/375,071 US11049730B2 (en) | 2018-04-05 | 2019-04-04 | Workpiece processing method |
| KR1020190039570A KR102481741B1 (ko) | 2018-04-05 | 2019-04-04 | 피가공물의 처리 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018073189A JP7077108B2 (ja) | 2018-04-05 | 2018-04-05 | 被加工物の処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019186322A JP2019186322A (ja) | 2019-10-24 |
| JP2019186322A5 true JP2019186322A5 (enExample) | 2021-03-18 |
| JP7077108B2 JP7077108B2 (ja) | 2022-05-30 |
Family
ID=68096079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018073189A Active JP7077108B2 (ja) | 2018-04-05 | 2018-04-05 | 被加工物の処理方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11049730B2 (enExample) |
| JP (1) | JP7077108B2 (enExample) |
| KR (1) | KR102481741B1 (enExample) |
| TW (1) | TWI781309B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019169627A (ja) * | 2018-03-23 | 2019-10-03 | 東京エレクトロン株式会社 | エッチング方法 |
| JP7336365B2 (ja) * | 2019-11-19 | 2023-08-31 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
| US11322364B2 (en) * | 2020-04-01 | 2022-05-03 | Tokyo Electron Limited | Method of patterning a metal film with improved sidewall roughness |
| WO2022020145A1 (en) * | 2020-07-19 | 2022-01-27 | Applied Materials, Inc. | Integration processes utilizing boron-doped silicon materials |
| US20220254683A1 (en) * | 2021-02-05 | 2022-08-11 | Tokyo Electron Limited | Removal of stray ruthenium metal nuclei for selective ruthenium metal layer formation |
| US20220301887A1 (en) * | 2021-03-16 | 2022-09-22 | Applied Materials, Inc. | Ruthenium etching process |
| US11749532B2 (en) * | 2021-05-04 | 2023-09-05 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| JP2024522394A (ja) * | 2021-06-03 | 2024-06-19 | アプライド マテリアルズ インコーポレイテッド | 金属フィーチャーの原子層エッチング |
| JP7099675B1 (ja) * | 2021-07-27 | 2022-07-12 | 東京エレクトロン株式会社 | エッチング方法、半導体装置の製造方法、プログラムおよびプラズマ処理装置 |
| JP2024542631A (ja) * | 2021-12-08 | 2024-11-15 | 東京エレクトロン株式会社 | モリブデンをエッチングする方法 |
| US20230420267A1 (en) * | 2022-05-27 | 2023-12-28 | Tokyo Electron Limited | Oxygen-free etching of non-volatile metals |
| KR102700925B1 (ko) | 2022-06-15 | 2024-09-02 | 주식회사 히타치하이테크 | 플라스마 처리 방법 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05275402A (ja) * | 1992-03-27 | 1993-10-22 | Hitachi Ltd | 固体表面加工方法 |
| JP2956485B2 (ja) | 1994-09-07 | 1999-10-04 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH11111683A (ja) * | 1997-09-30 | 1999-04-23 | Sony Corp | 半導体装置の製造方法 |
| JP3658269B2 (ja) * | 2000-03-29 | 2005-06-08 | 株式会社ルネサステクノロジ | 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法 |
| US6528363B2 (en) * | 2001-03-19 | 2003-03-04 | International Business Machines Corporation | Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch |
| JP3990881B2 (ja) * | 2001-07-23 | 2007-10-17 | 株式会社日立製作所 | 半導体製造装置及びそのクリーニング方法 |
| US7250371B2 (en) * | 2003-08-26 | 2007-07-31 | Lam Research Corporation | Reduction of feature critical dimensions |
| JP2008532324A (ja) * | 2005-03-03 | 2008-08-14 | アプライド マテリアルズ インコーポレイテッド | 制御された処理結果分布を有するエッチング方法 |
| JP5130652B2 (ja) * | 2006-05-15 | 2013-01-30 | 富士通株式会社 | 金属膜のエッチング方法及び半導体装置の製造方法 |
| US9293319B2 (en) * | 2011-03-09 | 2016-03-22 | Micron Technology, Inc. | Removal of metal |
| US9576811B2 (en) * | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| US9852923B2 (en) * | 2015-04-02 | 2017-12-26 | Applied Materials, Inc. | Mask etch for patterning |
| US10343186B2 (en) * | 2015-10-09 | 2019-07-09 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
| JP6541618B2 (ja) * | 2016-05-25 | 2019-07-10 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| US10361282B2 (en) * | 2017-05-08 | 2019-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a low-K spacer |
| US10700009B2 (en) * | 2017-10-04 | 2020-06-30 | Tokyo Electron Limited | Ruthenium metal feature fill for interconnects |
-
2018
- 2018-04-05 JP JP2018073189A patent/JP7077108B2/ja active Active
-
2019
- 2019-04-01 TW TW108111465A patent/TWI781309B/zh active
- 2019-04-04 KR KR1020190039570A patent/KR102481741B1/ko active Active
- 2019-04-04 US US16/375,071 patent/US11049730B2/en active Active
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