TWI781309B - 被加工物之處理方法 - Google Patents

被加工物之處理方法 Download PDF

Info

Publication number
TWI781309B
TWI781309B TW108111465A TW108111465A TWI781309B TW I781309 B TWI781309 B TW I781309B TW 108111465 A TW108111465 A TW 108111465A TW 108111465 A TW108111465 A TW 108111465A TW I781309 B TWI781309 B TW I781309B
Authority
TW
Taiwan
Prior art keywords
film
ruthenium
etching
gas
cycles
Prior art date
Application number
TW108111465A
Other languages
English (en)
Chinese (zh)
Other versions
TW202004896A (zh
Inventor
長友優
加藤隆彥
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202004896A publication Critical patent/TW202004896A/zh
Application granted granted Critical
Publication of TWI781309B publication Critical patent/TWI781309B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW108111465A 2018-04-05 2019-04-01 被加工物之處理方法 TWI781309B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-073189 2018-04-05
JP2018073189A JP7077108B2 (ja) 2018-04-05 2018-04-05 被加工物の処理方法

Publications (2)

Publication Number Publication Date
TW202004896A TW202004896A (zh) 2020-01-16
TWI781309B true TWI781309B (zh) 2022-10-21

Family

ID=68096079

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108111465A TWI781309B (zh) 2018-04-05 2019-04-01 被加工物之處理方法

Country Status (4)

Country Link
US (1) US11049730B2 (enExample)
JP (1) JP7077108B2 (enExample)
KR (1) KR102481741B1 (enExample)
TW (1) TWI781309B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019169627A (ja) * 2018-03-23 2019-10-03 東京エレクトロン株式会社 エッチング方法
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
US11322364B2 (en) 2020-04-01 2022-05-03 Tokyo Electron Limited Method of patterning a metal film with improved sidewall roughness
WO2022020145A1 (en) 2020-07-19 2022-01-27 Applied Materials, Inc. Integration processes utilizing boron-doped silicon materials
US20220254683A1 (en) * 2021-02-05 2022-08-11 Tokyo Electron Limited Removal of stray ruthenium metal nuclei for selective ruthenium metal layer formation
US20220301887A1 (en) * 2021-03-16 2022-09-22 Applied Materials, Inc. Ruthenium etching process
US11749532B2 (en) * 2021-05-04 2023-09-05 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP2024522394A (ja) * 2021-06-03 2024-06-19 アプライド マテリアルズ インコーポレイテッド 金属フィーチャーの原子層エッチング
JP7099675B1 (ja) * 2021-07-27 2022-07-12 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法、プログラムおよびプラズマ処理装置
US20240186149A1 (en) * 2021-12-08 2024-06-06 Tokyo Electron Limited Methods for Etching Molybdenum
US20230420267A1 (en) * 2022-05-27 2023-12-28 Tokyo Electron Limited Oxygen-free etching of non-volatile metals
WO2023242977A1 (ja) 2022-06-15 2023-12-21 株式会社日立ハイテク プラズマ処理方法
US12685053B2 (en) 2023-09-13 2026-07-14 Hitachi High-Tech Corporation Plasma processing method
KR20260057441A (ko) 2024-10-18 2026-04-28 주식회사 히타치하이테크 플라스마 처리 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201637093A (zh) * 2015-04-02 2016-10-16 應用材料股份有限公司 用於圖案化的遮罩蝕刻

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05275402A (ja) * 1992-03-27 1993-10-22 Hitachi Ltd 固体表面加工方法
JP2956485B2 (ja) 1994-09-07 1999-10-04 日本電気株式会社 半導体装置の製造方法
JPH11111683A (ja) * 1997-09-30 1999-04-23 Sony Corp 半導体装置の製造方法
JP3658269B2 (ja) 2000-03-29 2005-06-08 株式会社ルネサステクノロジ 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法
US6528363B2 (en) * 2001-03-19 2003-03-04 International Business Machines Corporation Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch
JP3990881B2 (ja) 2001-07-23 2007-10-17 株式会社日立製作所 半導体製造装置及びそのクリーニング方法
US7250371B2 (en) 2003-08-26 2007-07-31 Lam Research Corporation Reduction of feature critical dimensions
CN101133682B (zh) 2005-03-03 2011-07-20 应用材料股份有限公司 用于蚀刻具有受控制的制程结果分配的方法
JP5130652B2 (ja) 2006-05-15 2013-01-30 富士通株式会社 金属膜のエッチング方法及び半導体装置の製造方法
US9293319B2 (en) * 2011-03-09 2016-03-22 Micron Technology, Inc. Removal of metal
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US10343186B2 (en) 2015-10-09 2019-07-09 Asm Ip Holding B.V. Vapor phase deposition of organic films
JP6541618B2 (ja) 2016-05-25 2019-07-10 東京エレクトロン株式会社 被処理体を処理する方法
US10361282B2 (en) * 2017-05-08 2019-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a low-K spacer
KR102601862B1 (ko) * 2017-10-04 2023-11-13 도쿄엘렉트론가부시키가이샤 상호접속부를 위한 루테늄 금속 피처 충전

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201637093A (zh) * 2015-04-02 2016-10-16 應用材料股份有限公司 用於圖案化的遮罩蝕刻

Also Published As

Publication number Publication date
KR102481741B1 (ko) 2022-12-26
JP2019186322A (ja) 2019-10-24
US11049730B2 (en) 2021-06-29
KR20190116933A (ko) 2019-10-15
JP7077108B2 (ja) 2022-05-30
TW202004896A (zh) 2020-01-16
US20190311915A1 (en) 2019-10-10

Similar Documents

Publication Publication Date Title
KR102481741B1 (ko) 피가공물의 처리 방법
TWI760555B (zh) 蝕刻方法
KR102565058B1 (ko) 에칭 방법
JP6646978B2 (ja) 高アスペクト比構造におけるコンタクト洗浄
KR102309936B1 (ko) 피처리체를 처리하는 방법
US9911607B2 (en) Method of processing target object
KR102364434B1 (ko) 에칭 방법
KR20210061937A (ko) 막을 에칭하는 방법 및 플라즈마 처리 장치
US11462412B2 (en) Etching method
KR20150128582A (ko) 에칭 방법
KR20170000340A (ko) 에칭 방법
US12334343B2 (en) Substrate processing method and substrate processing system
JP7336873B2 (ja) 基板処理方法
KR102867092B1 (ko) 기판 처리 방법

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent