JP2020015980A5 - - Google Patents

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JP2020015980A5
JP2020015980A5 JP2019136871A JP2019136871A JP2020015980A5 JP 2020015980 A5 JP2020015980 A5 JP 2020015980A5 JP 2019136871 A JP2019136871 A JP 2019136871A JP 2019136871 A JP2019136871 A JP 2019136871A JP 2020015980 A5 JP2020015980 A5 JP 2020015980A5
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Japan
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titanium nitride
nitride film
monolayer
treated
plasma
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JP2019136871A
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Japanese (ja)
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JP7330793B2 (ja
JP2020015980A (ja
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JP2019136871A 2018-07-26 2019-07-25 （２００）結晶学的集合組織を有する窒化チタン膜を形成するための方法 Active JP7330793B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862703701P 2018-07-26 2018-07-26
US62/703701 2018-07-26

Publications (3)

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JP2020015980A JP2020015980A (ja) 2020-01-30
JP2020015980A5 true JP2020015980A5 (enExample) 2022-07-06
JP7330793B2 JP7330793B2 (ja) 2023-08-22

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JP2019136871A Active JP7330793B2 (ja) 2018-07-26 2019-07-25 （２００）結晶学的集合組織を有する窒化チタン膜を形成するための方法

Country Status (5)

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US (1) US11152207B2 (enExample)
JP (1) JP7330793B2 (enExample)
KR (1) KR102610585B1 (enExample)
CN (1) CN110777363A (enExample)
TW (1) TWI829728B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7113670B2 (ja) * 2018-06-08 2022-08-05 東京エレクトロン株式会社 Ａｌｄ成膜方法およびａｌｄ成膜装置
JP7330035B2 (ja) * 2019-09-25 2023-08-21 東京エレクトロン株式会社 半導体装置の製造方法及び成膜装置
WO2021168010A1 (en) 2020-02-21 2021-08-26 Applied Materials, Inc. Method of making high critical temperature metal nitride layer
WO2021168007A1 (en) * 2020-02-21 2021-08-26 Applied Materials, Inc. High critical temperature metal nitride layer with oxide or oxynitride seed layer
TWI772913B (zh) * 2020-10-06 2022-08-01 天虹科技股份有限公司 微粒的原子層沉積裝置
US11854770B2 (en) * 2021-01-14 2023-12-26 Applied Materials, Inc. Plasma processing with independent temperature control
CN117198877A (zh) * 2022-05-30 2023-12-08 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
CN115666213B (zh) * 2022-10-27 2025-02-14 阿里巴巴达摩院(杭州)科技有限公司 超导薄膜制备方法、超导薄膜、量子器件及量子芯片

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