JP7330793B2 - (200)結晶学的集合組織を有する窒化チタン膜を形成するための方法 - Google Patents

(200)結晶学的集合組織を有する窒化チタン膜を形成するための方法 Download PDF

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JP7330793B2
JP7330793B2 JP2019136871A JP2019136871A JP7330793B2 JP 7330793 B2 JP7330793 B2 JP 7330793B2 JP 2019136871 A JP2019136871 A JP 2019136871A JP 2019136871 A JP2019136871 A JP 2019136871A JP 7330793 B2 JP7330793 B2 JP 7330793B2
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titanium nitride
nitride film
plasma
monolayer
gas
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JP2020015980A (ja
JP2020015980A5 (enExample
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タピリー カンダバラ
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Tokyo Electron Ltd
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7113670B2 (ja) * 2018-06-08 2022-08-05 東京エレクトロン株式会社 Ald成膜方法およびald成膜装置
JP7330035B2 (ja) * 2019-09-25 2023-08-21 東京エレクトロン株式会社 半導体装置の製造方法及び成膜装置
WO2021168010A1 (en) 2020-02-21 2021-08-26 Applied Materials, Inc. Method of making high critical temperature metal nitride layer
WO2021168007A1 (en) * 2020-02-21 2021-08-26 Applied Materials, Inc. High critical temperature metal nitride layer with oxide or oxynitride seed layer
TWI772913B (zh) * 2020-10-06 2022-08-01 天虹科技股份有限公司 微粒的原子層沉積裝置
US11854770B2 (en) * 2021-01-14 2023-12-26 Applied Materials, Inc. Plasma processing with independent temperature control
CN117198877A (zh) * 2022-05-30 2023-12-08 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001291682A (ja) 2000-02-01 2001-10-19 Applied Materials Inc 化学気相堆積により形成された窒化チタン膜のプラズマ処理
JP2004186693A (ja) 2002-12-03 2004-07-02 Asm Internatl Nv 調節された仕事関数で電極を形成する方法
JP2009071293A (ja) 1996-07-09 2009-04-02 Applied Materials Inc 半導体ウエハ上に膜を構築するためのチャンバ
JP2012104551A (ja) 2010-11-08 2012-05-31 Elpida Memory Inc 半導体記憶装置及びその製造方法
JP2016125104A (ja) 2015-01-06 2016-07-11 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996012048A2 (en) * 1994-10-11 1996-04-25 Gelest, Inc. Conformal titanium-based films and method for their preparation
CA2202387A1 (en) * 1994-10-11 1996-04-25 Barry C. Arkles Conformal titanium-based films and method for their preparation
US6251758B1 (en) * 1994-11-14 2001-06-26 Applied Materials, Inc. Construction of a film on a semiconductor wafer
KR0147626B1 (ko) * 1995-03-30 1998-11-02 김광호 타이타늄 카본 나이트라이드 게이트전극 형성방법
JP3235549B2 (ja) * 1997-11-07 2001-12-04 ヤマハ株式会社 導電層形成法
JPH09312297A (ja) * 1995-12-05 1997-12-02 Applied Materials Inc 薄膜のプラズマアニール
EP0867940A3 (en) * 1997-03-27 1999-10-13 Applied Materials, Inc. An underlayer for an aluminum interconnect
JP2000082695A (ja) * 1998-05-14 2000-03-21 Sony Corp プラズマエッチング法及び半導体装置
US7122414B2 (en) * 2002-12-03 2006-10-17 Asm International, Inc. Method to fabricate dual metal CMOS devices
KR100636037B1 (ko) 2004-11-19 2006-10-18 삼성전자주식회사 티타늄 질화막 형성 방법 및 이를 수행하기 위한 장치
US7407876B2 (en) 2006-03-20 2008-08-05 Tokyo Electron Limited Method of plasma enhanced atomic layer deposition of TaC and TaCN films having good adhesion to copper
JP2007266526A (ja) * 2006-03-30 2007-10-11 Fujitsu Ltd 半導体装置の製造方法
US7776733B2 (en) 2007-05-02 2010-08-17 Tokyo Electron Limited Method for depositing titanium nitride films for semiconductor manufacturing
JP2012193445A (ja) * 2011-02-28 2012-10-11 Tokyo Electron Ltd 窒化チタン膜の形成方法、窒化チタン膜の形成装置及びプログラム
US8954125B2 (en) * 2011-07-28 2015-02-10 International Business Machines Corporation Low-loss superconducting devices
US9556516B2 (en) * 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
WO2017015432A1 (en) * 2015-07-23 2017-01-26 Massachusetts Institute Of Technology Superconducting integrated circuit
US9773779B2 (en) * 2015-08-06 2017-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with resistor layer and method for forming the same
US9691871B1 (en) * 2015-12-18 2017-06-27 Stmicroelectronics (Crolles 2) Sas Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride
JP6583054B2 (ja) * 2016-02-26 2019-10-02 東京エレクトロン株式会社 基板処理方法及び記憶媒体
JP6548622B2 (ja) * 2016-09-21 2019-07-24 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置及びプログラム
US10229833B2 (en) * 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10867788B2 (en) * 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009071293A (ja) 1996-07-09 2009-04-02 Applied Materials Inc 半導体ウエハ上に膜を構築するためのチャンバ
JP2001291682A (ja) 2000-02-01 2001-10-19 Applied Materials Inc 化学気相堆積により形成された窒化チタン膜のプラズマ処理
JP2004186693A (ja) 2002-12-03 2004-07-02 Asm Internatl Nv 調節された仕事関数で電極を形成する方法
JP2012104551A (ja) 2010-11-08 2012-05-31 Elpida Memory Inc 半導体記憶装置及びその製造方法
JP2016125104A (ja) 2015-01-06 2016-07-11 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

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