JP2005518675A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005518675A5 JP2005518675A5 JP2003572081A JP2003572081A JP2005518675A5 JP 2005518675 A5 JP2005518675 A5 JP 2005518675A5 JP 2003572081 A JP2003572081 A JP 2003572081A JP 2003572081 A JP2003572081 A JP 2003572081A JP 2005518675 A5 JP2005518675 A5 JP 2005518675A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- layer
- substrate
- thickness
- predetermined
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10207122A DE10207122B4 (de) | 2002-02-20 | 2002-02-20 | Ein Verfahren zur Herstellung von Schichten aus Oxid auf einer Oberfläche eines Substrats |
| US10/208,308 US6703278B2 (en) | 2002-02-20 | 2002-07-30 | Method of forming layers of oxide on a surface of a substrate |
| PCT/US2002/040807 WO2003073491A1 (en) | 2002-02-20 | 2002-12-20 | Method of forming layers of oxide of different thicknesses on a surface of a substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005518675A JP2005518675A (ja) | 2005-06-23 |
| JP2005518675A5 true JP2005518675A5 (enExample) | 2006-09-07 |
| JP4145802B2 JP4145802B2 (ja) | 2008-09-03 |
Family
ID=27766671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003572081A Expired - Fee Related JP4145802B2 (ja) | 2002-02-20 | 2002-12-20 | 基板表面上に厚みの異なる酸化物層を形成する方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1476899B1 (enExample) |
| JP (1) | JP4145802B2 (enExample) |
| CN (1) | CN1315162C (enExample) |
| AU (1) | AU2002351408A1 (enExample) |
| TW (1) | TWI278038B (enExample) |
| WO (1) | WO2003073491A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100678321B1 (ko) | 2005-12-14 | 2007-02-02 | 동부일렉트로닉스 주식회사 | 서로 다른 두께의 게이트 유전층들을 형성하는 방법 |
| DE102017104906A1 (de) * | 2017-03-08 | 2018-09-13 | Olav Birlem | Anordnung und Verfahren zum Bereitstellen einer Vielzahl von Nanodrähten |
| CN108257860A (zh) * | 2018-01-19 | 2018-07-06 | 武汉新芯集成电路制造有限公司 | 一种栅极氧化层的制作方法 |
| US11430701B2 (en) | 2020-09-25 | 2022-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate oxide structures in semiconductor devices |
| US12119222B2 (en) | 2021-01-14 | 2024-10-15 | Changxin Memory Technologies, Inc. | Method for preparing semiconductor structure and semiconductor structure |
| CN114765107A (zh) * | 2021-01-14 | 2022-07-19 | 长鑫存储技术有限公司 | 半导体结构的制备方法及半导体结构 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6033943A (en) * | 1996-08-23 | 2000-03-07 | Advanced Micro Devices, Inc. | Dual gate oxide thickness integrated circuit and process for making same |
| US6087236A (en) * | 1998-11-24 | 2000-07-11 | Intel Corporation | Integrated circuit with multiple gate dielectric structures |
| US6235590B1 (en) * | 1998-12-18 | 2001-05-22 | Lsi Logic Corporation | Fabrication of differential gate oxide thicknesses on a single integrated circuit chip |
| KR20010004417A (ko) * | 1999-06-28 | 2001-01-15 | 김영환 | 반도체장치의 듀얼 게이트산화막 형성 방법 |
-
2002
- 2002-12-20 JP JP2003572081A patent/JP4145802B2/ja not_active Expired - Fee Related
- 2002-12-20 WO PCT/US2002/040807 patent/WO2003073491A1/en not_active Ceased
- 2002-12-20 EP EP02787067A patent/EP1476899B1/en not_active Expired - Lifetime
- 2002-12-20 CN CNB028281977A patent/CN1315162C/zh not_active Expired - Fee Related
- 2002-12-20 AU AU2002351408A patent/AU2002351408A1/en not_active Abandoned
-
2003
- 2003-02-19 TW TW092103374A patent/TWI278038B/zh not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI788584B (zh) | 循環蝕刻製程 | |
| TWI780345B (zh) | 使用電漿修飾介電材料之選擇性循環乾蝕刻製程 | |
| KR100519798B1 (ko) | 향상된 생산성을 갖는 박막 형성 방법 | |
| JP2019195059A5 (enExample) | ||
| TW200629408A (en) | Atomic layer deposited titanium aluminum oxide films | |
| EP1122775A3 (en) | Treatment of a metal nitride/metal stack | |
| JP2010205854A (ja) | 半導体装置の製造方法 | |
| EP1916707A3 (en) | Methods for depositing metal films by CVD or ALD processes onto diffusion barrier layers | |
| WO2004017365A3 (en) | Deposition of amorphous silicon-containing films | |
| ATE489726T1 (de) | Verfahren zur ausbildung dielektrischer filme | |
| WO2004009861A3 (en) | Method to form ultra high quality silicon-containing compound layers | |
| ATE518239T1 (de) | Verfahren zur uv-vorbehandlung von ultradünnem oxynitrid zur herstellung von siliziumnitridschichten | |
| WO2004075248A3 (fr) | Procede de revetement d'une surface, fabrication d'interconnexions en microelectronique utilisant ce procede, et circuits integres | |
| WO2004079031A3 (en) | Chemical vapor deposition of silicon on to substrates | |
| JP2004531874A (ja) | 半導体デバイスにおける基板上へ膜を形成する方法及びその半導体デバイス | |
| EP1505641A4 (en) | METHOD FOR TREATING A SUBSTRATE | |
| KR20200017006A (ko) | 실리콘계 유전체들 상에서의 선택적 증착을 위한 방법들 | |
| JP2001015612A5 (enExample) | ||
| KR100519376B1 (ko) | 반도체 소자의 확산 방지막 형성 방법 | |
| WO2016205505A1 (en) | Deposition methods for uniform and conformal hybrid titanium oxide films | |
| KR960035843A (ko) | 반도체 소자의 금속 배선 형성방법 | |
| WO2004044898A3 (en) | Nitridation of high-k dielectrics | |
| JPH07326618A (ja) | 配線構造およびその製造方法 | |
| JP2005518675A5 (enExample) | ||
| WO2004010466A3 (en) | Metal organic chemical vapor deposition and atomic layer deposition of metal oxynitride and metal silicon oxynitride |