JP2021504936A5 - - Google Patents

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Publication number
JP2021504936A5
JP2021504936A5 JP2020526133A JP2020526133A JP2021504936A5 JP 2021504936 A5 JP2021504936 A5 JP 2021504936A5 JP 2020526133 A JP2020526133 A JP 2020526133A JP 2020526133 A JP2020526133 A JP 2020526133A JP 2021504936 A5 JP2021504936 A5 JP 2021504936A5
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JP
Japan
Prior art keywords
superconducting
substrate
rear surface
via layer
coupler
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JP2020526133A
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English (en)
Japanese (ja)
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JP2021504936A (ja
JP7212439B2 (ja
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Priority claimed from US15/822,338 external-priority patent/US10446736B2/en
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Publication of JP2021504936A5 publication Critical patent/JP2021504936A5/ja
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Publication of JP7212439B2 publication Critical patent/JP7212439B2/ja
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JP2020526133A 2017-11-27 2018-10-19 超電導部分tsvを用いたトランスモン・キュービット用の後面結合 Active JP7212439B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/822,338 US10446736B2 (en) 2017-11-27 2017-11-27 Backside coupling with superconducting partial TSV for transmon qubits
US15/822,338 2017-11-27
PCT/EP2018/078707 WO2019101448A1 (en) 2017-11-27 2018-10-19 Backside coupling with superconducting partial tsv for transmon qubits

Publications (3)

Publication Number Publication Date
JP2021504936A JP2021504936A (ja) 2021-02-15
JP2021504936A5 true JP2021504936A5 (enExample) 2021-03-25
JP7212439B2 JP7212439B2 (ja) 2023-01-25

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JP2020526133A Active JP7212439B2 (ja) 2017-11-27 2018-10-19 超電導部分tsvを用いたトランスモン・キュービット用の後面結合

Country Status (6)

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US (3) US10446736B2 (enExample)
EP (1) EP3707647B1 (enExample)
JP (1) JP7212439B2 (enExample)
CN (1) CN111295678B (enExample)
ES (1) ES2896013T3 (enExample)
WO (1) WO2019101448A1 (enExample)

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US10446736B2 (en) * 2017-11-27 2019-10-15 International Business Machines Corporation Backside coupling with superconducting partial TSV for transmon qubits
US10811588B2 (en) * 2018-08-06 2020-10-20 International Business Machines Corporation Vertical dispersive readout of qubits of a lattice surface code architecture
US11088310B2 (en) * 2019-04-29 2021-08-10 International Business Machines Corporation Through-silicon-via fabrication in planar quantum devices
US11699091B2 (en) 2020-03-02 2023-07-11 Massachusetts Institute Of Technology Qubit circuits with deep, in-substrate components
US11289638B2 (en) * 2020-06-22 2022-03-29 International Business Machines Corporation Superconducting qubit lifetime and coherence improvement via backside etching
US11152707B1 (en) * 2020-07-02 2021-10-19 International Business Machines Corporation Fast radio frequency package
EP4002227A1 (en) * 2020-11-23 2022-05-25 IQM Finland Oy Three-dimensional superconducting qubit and a method for manufacturing the same
US12033981B2 (en) 2020-12-16 2024-07-09 International Business Machines Corporation Create a protected layer for interconnects and devices in a packaged quantum structure
EP4227862A4 (en) * 2020-12-31 2024-04-24 Origin Quantum Computing Technology (Hefei) Co., Ltd Superconducting quantum chip structure and superconducting quantum chip preparation method
EP4053865B1 (en) * 2021-03-02 2024-04-24 Imec VZW Trench capacitor device for a superconducting electronic circuit, superconducting qubit device and method for forming a trench capacitor device for a qubit device
US11621387B2 (en) * 2021-03-11 2023-04-04 International Business Machines Corporation Quantum device with low surface losses
JP2024518908A (ja) * 2021-04-28 2024-05-08 アイキューエム フィンランド オイ キュービットのための光駆動
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US10446736B2 (en) * 2017-11-27 2019-10-15 International Business Machines Corporation Backside coupling with superconducting partial TSV for transmon qubits

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