JP7212439B2 - 超電導部分ｔｓｖを用いたトランスモン・キュービット用の後面結合 - Google Patents

超電導部分ｔｓｖを用いたトランスモン・キュービット用の後面結合 Download PDF

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JP7212439B2
JP7212439B2 JP2020526133A JP2020526133A JP7212439B2 JP 7212439 B2 JP7212439 B2 JP 7212439B2 JP 2020526133 A JP2020526133 A JP 2020526133A JP 2020526133 A JP2020526133 A JP 2020526133A JP 7212439 B2 JP7212439 B2 JP 7212439B2
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superconducting
layer
coupler
substrate
trench
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JP2021504936A (ja
JP2021504936A5 (enExample
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トパログ、ラジット、オヌール
ローゼンブラット、サミー
ハーツバーグ、ジャレッド、バーニー
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International Business Machines Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/195—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using superconductive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/805—Constructional details for Josephson-effect devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/20—Models of quantum computing, e.g. quantum circuits or universal quantum computers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32058—Deposition of superconductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53285—Conductive materials containing superconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • Manufacturing & Machinery (AREA)
  • Data Mining & Analysis (AREA)
  • Pure & Applied Mathematics (AREA)
  • Software Systems (AREA)
  • Mathematical Optimization (AREA)
  • Mathematical Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Computational Mathematics (AREA)
  • Artificial Intelligence (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2020526133A 2017-11-27 2018-10-19 超電導部分ｔｓｖを用いたトランスモン・キュービット用の後面結合 Active JP7212439B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/822,338 US10446736B2 (en) 2017-11-27 2017-11-27 Backside coupling with superconducting partial TSV for transmon qubits
US15/822,338 2017-11-27
PCT/EP2018/078707 WO2019101448A1 (en) 2017-11-27 2018-10-19 Backside coupling with superconducting partial tsv for transmon qubits

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JP2021504936A JP2021504936A (ja) 2021-02-15
JP2021504936A5 JP2021504936A5 (enExample) 2021-03-25
JP7212439B2 true JP7212439B2 (ja) 2023-01-25

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US (3) US10446736B2 (enExample)
EP (1) EP3707647B1 (enExample)
JP (1) JP7212439B2 (enExample)
CN (1) CN111295678B (enExample)
ES (1) ES2896013T3 (enExample)
WO (1) WO2019101448A1 (enExample)

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US10068184B1 (en) * 2017-10-27 2018-09-04 International Business Machines Corporation Vertical superconducting capacitors for transmon qubits
US10446736B2 (en) * 2017-11-27 2019-10-15 International Business Machines Corporation Backside coupling with superconducting partial TSV for transmon qubits
US10811588B2 (en) * 2018-08-06 2020-10-20 International Business Machines Corporation Vertical dispersive readout of qubits of a lattice surface code architecture
US11088310B2 (en) * 2019-04-29 2021-08-10 International Business Machines Corporation Through-silicon-via fabrication in planar quantum devices
WO2021178042A1 (en) * 2020-03-02 2021-09-10 Massachusetts Institute Of Technology Qubit circuits with deep, in-substrate components
US11289638B2 (en) * 2020-06-22 2022-03-29 International Business Machines Corporation Superconducting qubit lifetime and coherence improvement via backside etching
US11152707B1 (en) * 2020-07-02 2021-10-19 International Business Machines Corporation Fast radio frequency package
EP4002227A1 (en) * 2020-11-23 2022-05-25 IQM Finland Oy Three-dimensional superconducting qubit and a method for manufacturing the same
US12033981B2 (en) 2020-12-16 2024-07-09 International Business Machines Corporation Create a protected layer for interconnects and devices in a packaged quantum structure
EP4227862A4 (en) * 2020-12-31 2024-04-24 Origin Quantum Computing Technology (Hefei) Co., Ltd Superconducting quantum chip structure and superconducting quantum chip preparation method
EP4053865B1 (en) 2021-03-02 2024-04-24 Imec VZW Trench capacitor device for a superconducting electronic circuit, superconducting qubit device and method for forming a trench capacitor device for a qubit device
US11621387B2 (en) * 2021-03-11 2023-04-04 International Business Machines Corporation Quantum device with low surface losses
KR20240004326A (ko) * 2021-04-28 2024-01-11 아이큐엠 핀란드 오와이 큐비트용 광학 드라이브
CN115697029B (zh) * 2022-12-30 2023-06-20 量子科技长三角产业创新中心 一种超导量子芯片及其制备方法

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Publication number Publication date
EP3707647A1 (en) 2020-09-16
US20190165237A1 (en) 2019-05-30
US10529908B2 (en) 2020-01-07
EP3707647B1 (en) 2021-09-29
ES2896013T3 (es) 2022-02-23
JP2021504936A (ja) 2021-02-15
CN111295678B (zh) 2023-07-28
US20200052181A1 (en) 2020-02-13
CN111295678A (zh) 2020-06-16
US10446736B2 (en) 2019-10-15
US10804454B2 (en) 2020-10-13
US20190181325A1 (en) 2019-06-13
WO2019101448A1 (en) 2019-05-31

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