JP2021174835A5 - - Google Patents

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Publication number
JP2021174835A5
JP2021174835A5 JP2020076334A JP2020076334A JP2021174835A5 JP 2021174835 A5 JP2021174835 A5 JP 2021174835A5 JP 2020076334 A JP2020076334 A JP 2020076334A JP 2020076334 A JP2020076334 A JP 2020076334A JP 2021174835 A5 JP2021174835 A5 JP 2021174835A5
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JP
Japan
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layer
conductive type
trench
drift
channel layer
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JP2020076334A
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English (en)
Japanese (ja)
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JP2021174835A (ja
JP7207361B2 (ja
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Priority to JP2020076334A priority Critical patent/JP7207361B2/ja
Priority claimed from JP2020076334A external-priority patent/JP7207361B2/ja
Priority to CN202180029678.0A priority patent/CN115485856A/zh
Priority to PCT/JP2021/016068 priority patent/WO2021215445A1/ja
Publication of JP2021174835A publication Critical patent/JP2021174835A/ja
Publication of JP2021174835A5 publication Critical patent/JP2021174835A5/ja
Priority to US17/969,023 priority patent/US20230038806A1/en
Application granted granted Critical
Publication of JP7207361B2 publication Critical patent/JP7207361B2/ja
Active legal-status Critical Current
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JP2020076334A 2020-04-22 2020-04-22 半導体装置 Active JP7207361B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020076334A JP7207361B2 (ja) 2020-04-22 2020-04-22 半導体装置
CN202180029678.0A CN115485856A (zh) 2020-04-22 2021-04-20 半导体装置
PCT/JP2021/016068 WO2021215445A1 (ja) 2020-04-22 2021-04-20 半導体装置
US17/969,023 US20230038806A1 (en) 2020-04-22 2022-10-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020076334A JP7207361B2 (ja) 2020-04-22 2020-04-22 半導体装置

Publications (3)

Publication Number Publication Date
JP2021174835A JP2021174835A (ja) 2021-11-01
JP2021174835A5 true JP2021174835A5 (enExample) 2022-01-31
JP7207361B2 JP7207361B2 (ja) 2023-01-18

Family

ID=78269100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020076334A Active JP7207361B2 (ja) 2020-04-22 2020-04-22 半導体装置

Country Status (4)

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US (1) US20230038806A1 (enExample)
JP (1) JP7207361B2 (enExample)
CN (1) CN115485856A (enExample)
WO (1) WO2021215445A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102812224B1 (ko) * 2021-03-03 2025-05-22 주식회사 디비하이텍 에피택셜층의 유효 두께 차등 구조를 가지는 슈퍼정션 반도체 소자 및 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679146B2 (en) * 2006-05-30 2010-03-16 Semiconductor Components Industries, Llc Semiconductor device having sub-surface trench charge compensation regions
US8373208B2 (en) * 2009-11-30 2013-02-12 Alpha And Omega Semiconductor Incorporated Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
JP2012169384A (ja) * 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP5717661B2 (ja) * 2011-03-10 2015-05-13 株式会社東芝 半導体装置とその製造方法
KR101790520B1 (ko) * 2012-05-18 2017-10-27 한국전자통신연구원 반도체 소자의 제조 방법
US9685511B2 (en) * 2012-05-21 2017-06-20 Infineon Technologies Austria Ag Semiconductor device and method for manufacturing a semiconductor device
JP5724997B2 (ja) * 2012-12-07 2015-05-27 株式会社デンソー スーパージャンクション構造の縦型ｍｏｓｆｅｔを有する半導体装置の製造方法
WO2015129430A1 (ja) * 2014-02-28 2015-09-03 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP6606007B2 (ja) * 2016-04-18 2019-11-13 トヨタ自動車株式会社 スイッチング素子
JP6769458B2 (ja) * 2017-07-26 2020-10-14 株式会社デンソー 半導体装置
JP7127389B2 (ja) * 2018-06-28 2022-08-30 富士電機株式会社 炭化珪素半導体装置
IT201900013416A1 (it) * 2019-07-31 2021-01-31 St Microelectronics Srl Dispositivo di potenza a bilanciamento di carica e procedimento di fabbricazione del dispositivo di potenza a bilanciamento di carica

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