JP7207361B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7207361B2 JP7207361B2 JP2020076334A JP2020076334A JP7207361B2 JP 7207361 B2 JP7207361 B2 JP 7207361B2 JP 2020076334 A JP2020076334 A JP 2020076334A JP 2020076334 A JP2020076334 A JP 2020076334A JP 7207361 B2 JP7207361 B2 JP 7207361B2
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- 239000004065 semiconductor Substances 0.000 title claims description 82
- 239000010410 layer Substances 0.000 claims description 237
- 239000012535 impurity Substances 0.000 claims description 24
- 239000002344 surface layer Substances 0.000 claims description 4
- 108091006146 Channels Proteins 0.000 description 42
- 239000000758 substrate Substances 0.000 description 31
- 238000011084 recovery Methods 0.000 description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
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-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0051—Diode reverse recovery losses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
- H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
- H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第1実施形態について、図面を参照しつつ説明する。まず、本実施形態の半導体装置における回路構成について説明する。図1に示されるように、本実施形態の半導体装置は、ノーマリオン型のJFET10と、ノーマリオフ型のMOSFET20とを有し、JFET10とMOSFET20とがカスコード接続されて構成されている。なお、本実施形態では、JFET10およびMOSFET20は、それぞれNチャネル型とされている。
第2実施形態について説明する。本実施形態は、第1実施形態に対し、ドリフト層212にスーパージャンクション(以下では、単にSJともいう)構造を構成したものである。その他に関しては、第1実施形態と同様であるため、ここでは説明を省略する。
第3実施形態について説明する。本実施形態は、第1実施形態の半導体装置を用いてインバータを構成したものである。その他に関しては、第1実施形態と同様であるため、ここでは説明を省略する。
本開示は、実施形態に準拠して記述されたが、本開示は当該実施形態や構造に限定されるものではないと理解される。本開示は、様々な変形例や均等範囲内の変形をも包含する。加えて、様々な組み合わせや形態、さらには、それらに一要素のみ、それ以上、あるいはそれ以下、を含む他の組み合わせや形態をも、本開示の範疇や思想範囲に入るものである。
211 ドレイン層
212 ドリフト層
213 チャネル層
214 トレンチ
215 ゲート絶縁膜
216 ソース層
Claims (3)
- トレンチゲート構造のMOSFETを有する半導体装置であって、
前記MOSFETは、
第1導電型のドリフト層(212)と、
前記ドリフト層上に配置された第2導電型のチャネル層(213)と、
前記チャネル層を貫通して前記ドリフト層に達するように形成されたトレンチ(214)の壁面に配置されたゲート絶縁膜(215)と、前記ゲート絶縁膜上に配置されたゲート電極(23)とを有するトレンチゲート構造と、
前記チャネル層の表層部において、前記トレンチに接するように形成され、前記ドリフト層よりも高不純物濃度とされた第1導電型のソース層(216)と、
前記ドリフト層を挟んで前記チャネル層と反対側に配置された第1導電型のドレイン層(211)と、
前記チャネル層および前記ソース層と電気的に接続されるソース電極(21)と、
前記ドレイン層と電気的に接続されるドレイン電極(22)と、を備え、
前記トレンチのうちの前記ドリフト層に達している部分は、全領域が第2導電型のウェル層(223)にて覆われており、
前記ウェル層は、前記チャネル層と繋がっており、
前記ドリフト層の不純物面密度に対する前記ウェル層の不純物面密度の面密度比は、3.0×10 -5 以上であって、2.0×10 -4 以下とされている半導体装置。 - ソース電極(11)、ドレイン電極(12)、ゲート電極(13)を有する接合型FETを備え、
前記MOSFETと、前記接合型FETとは、前記接合型FETのソース電極と前記MOSFETのドレイン電極とが電気的に接続されてカスコード接続されている請求項1に記載の半導体装置。 - 前記面密度比は、3.0×10-5以上であって、4.0×10-5以下とされている請求項1または2に記載の半導体装置。
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CN202180029678.0A CN115485856A (zh) | 2020-04-22 | 2021-04-20 | 半导体装置 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012169384A (ja) | 2011-02-11 | 2012-09-06 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP2012199515A (ja) | 2011-03-10 | 2012-10-18 | Toshiba Corp | 半導体装置とその製造方法 |
JP2014116410A (ja) | 2012-12-07 | 2014-06-26 | Denso Corp | スーパージャンクション構造の縦型mosfetを有する半導体装置の製造方法 |
JP2019029997A (ja) | 2017-07-26 | 2019-02-21 | 株式会社デンソー | 半導体装置 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012169384A (ja) | 2011-02-11 | 2012-09-06 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP2012199515A (ja) | 2011-03-10 | 2012-10-18 | Toshiba Corp | 半導体装置とその製造方法 |
JP2014116410A (ja) | 2012-12-07 | 2014-06-26 | Denso Corp | スーパージャンクション構造の縦型mosfetを有する半導体装置の製造方法 |
JP2019029997A (ja) | 2017-07-26 | 2019-02-21 | 株式会社デンソー | 半導体装置 |
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JP2021174835A (ja) | 2021-11-01 |
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