JP2020533779A5 - - Google Patents
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- Publication number
- JP2020533779A5 JP2020533779A5 JP2019504796A JP2019504796A JP2020533779A5 JP 2020533779 A5 JP2020533779 A5 JP 2020533779A5 JP 2019504796 A JP2019504796 A JP 2019504796A JP 2019504796 A JP2019504796 A JP 2019504796A JP 2020533779 A5 JP2020533779 A5 JP 2020533779A5
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- electrode
- single crystal
- ferroelectric memory
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 44
- 239000000758 substrate Substances 0.000 claims 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 22
- 229910052710 silicon Inorganic materials 0.000 claims 22
- 239000010703 silicon Substances 0.000 claims 22
- 238000000034 method Methods 0.000 claims 14
- 239000010409 thin film Substances 0.000 claims 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 10
- 230000010287 polarization Effects 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical class CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 claims 1
- 229910005883 NiSi Inorganic materials 0.000 claims 1
- 229910004121 SrRuO Inorganic materials 0.000 claims 1
- 229910008599 TiW Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 238000011017 operating method Methods 0.000 claims 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710793719.9 | 2017-09-06 | ||
| CN201710793719.9A CN107481751B (zh) | 2017-09-06 | 2017-09-06 | 一种铁电存储集成电路 |
| PCT/CN2018/077485 WO2019047489A1 (zh) | 2017-09-06 | 2018-02-28 | 铁电存储集成电路及其操作方法和制备方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020533779A JP2020533779A (ja) | 2020-11-19 |
| JP2020533779A5 true JP2020533779A5 (https=) | 2021-01-07 |
| JP7079769B2 JP7079769B2 (ja) | 2022-06-02 |
Family
ID=60583540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019504796A Active JP7079769B2 (ja) | 2017-09-06 | 2018-02-28 | 強誘電体メモリ集積回路及びその操作方法並びに製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11145664B2 (https=) |
| JP (1) | JP7079769B2 (https=) |
| CN (2) | CN107481751B (https=) |
| WO (1) | WO2019047489A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107481751B (zh) * | 2017-09-06 | 2020-01-10 | 复旦大学 | 一种铁电存储集成电路 |
| CN108417574B (zh) * | 2018-03-12 | 2020-05-12 | 复旦大学 | 基于soi的铁电存储器的制造方法 |
| CN109378313B (zh) * | 2018-09-23 | 2020-10-30 | 复旦大学 | 一种低功耗三维非易失性存储器及其制备方法 |
| US11646374B2 (en) * | 2018-12-26 | 2023-05-09 | Intel Corporation | Ferroelectric transistors to store multiple states of resistances for memory cells |
| CN112310214B (zh) | 2019-07-31 | 2021-09-24 | 复旦大学 | 一种非易失性铁电存储器及其制备方法 |
| CN114342075B (zh) * | 2019-09-26 | 2026-01-09 | 华为技术有限公司 | 一种存储器、存储器阵列以及存储器的数据读写方法 |
| CN115053292A (zh) * | 2020-03-17 | 2022-09-13 | 华为技术有限公司 | 平面存储器、立体存储器以及电子设备 |
| US11398568B2 (en) * | 2020-06-17 | 2022-07-26 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Ferroelectric based transistors |
| WO2022104742A1 (zh) * | 2020-11-20 | 2022-05-27 | 华为技术有限公司 | 一种铁电存储器及电子设备 |
| CN112635665B (zh) * | 2020-12-22 | 2024-07-12 | 上海复存信息科技有限公司 | 一种基于多层掩膜套刻的面内岛状铁电阻变存储器单元结构及其制备方法 |
| CN118136073B (zh) * | 2024-03-20 | 2025-01-07 | 北京超弦存储器研究院 | 存储装置及其数据读取方法、电子设备 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100289975B1 (ko) * | 1996-07-09 | 2001-06-01 | 니시무로 타이죠 | 반도체장치의제조방법및반도체장치 |
| JP2002324892A (ja) * | 2001-04-25 | 2002-11-08 | Hitachi Ltd | 強誘電体メモリ |
| JP2004165351A (ja) * | 2002-11-12 | 2004-06-10 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP4256670B2 (ja) * | 2002-12-10 | 2009-04-22 | 富士通株式会社 | 容量素子、半導体装置およびその製造方法 |
| EP1628352A4 (en) * | 2003-05-08 | 2009-07-22 | Panasonic Corp | ELECTRIC SWITCH AND STORAGE DEVICE USING THE SWITCH |
| JP4015968B2 (ja) * | 2003-06-09 | 2007-11-28 | 株式会社東芝 | 強誘電体メモリ |
| JP4171908B2 (ja) * | 2004-01-20 | 2008-10-29 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体メモリ、及び圧電素子 |
| WO2007046176A1 (ja) * | 2005-10-19 | 2007-04-26 | Yamaju Ceramics Co., Ltd. | 強誘電体単結晶、それを用いた弾性表面波フィルタ及びその製造方法 |
| JP2009212448A (ja) * | 2008-03-06 | 2009-09-17 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
| JP5487625B2 (ja) * | 2009-01-22 | 2014-05-07 | ソニー株式会社 | 半導体装置 |
| CN104637949B (zh) * | 2015-01-24 | 2017-11-17 | 复旦大学 | 非破坏性读出铁电存储器及其制备方法和操作方法 |
| CN104637948B (zh) * | 2015-01-24 | 2017-11-17 | 复旦大学 | 非破坏性读出铁电存储器及其制备方法和读/写操作方法 |
| CN105256376B (zh) * | 2015-11-18 | 2017-12-22 | 中国科学技术大学 | 一种控制铁电单晶电致形变取向的方法 |
| CN105655342B (zh) * | 2016-02-23 | 2019-07-23 | 复旦大学 | 非易失性铁电存储器及其制备方法和读/写操作方法 |
| CN108475523B (zh) * | 2016-04-12 | 2021-10-19 | 复旦大学 | 大电流读出铁电单晶薄膜存储器及其制备方法和操作方法 |
| CN107123648B (zh) * | 2017-04-12 | 2020-09-01 | 复旦大学 | 一种面内读/写操作铁电忆阻器及其制备方法 |
| CN107481751B (zh) * | 2017-09-06 | 2020-01-10 | 复旦大学 | 一种铁电存储集成电路 |
-
2017
- 2017-09-06 CN CN201710793719.9A patent/CN107481751B/zh active Active
-
2018
- 2018-02-28 WO PCT/CN2018/077485 patent/WO2019047489A1/zh not_active Ceased
- 2018-02-28 US US16/322,032 patent/US11145664B2/en active Active
- 2018-02-28 CN CN201880003413.1A patent/CN109791785B/zh active Active
- 2018-02-28 JP JP2019504796A patent/JP7079769B2/ja active Active
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