JP2020502370A - ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 - Google Patents

ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 Download PDF

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Publication number
JP2020502370A
JP2020502370A JP2019533638A JP2019533638A JP2020502370A JP 2020502370 A JP2020502370 A JP 2020502370A JP 2019533638 A JP2019533638 A JP 2019533638A JP 2019533638 A JP2019533638 A JP 2019533638A JP 2020502370 A JP2020502370 A JP 2020502370A
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JP
Japan
Prior art keywords
copper
formula
suppressor
hours
composition according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2019533638A
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English (en)
Japanese (ja)
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JP2020502370A5 (enExample
Inventor
パトリク キーンレ，マルセル
パトリク キーンレ，マルセル
マイアー，ディーター
アルノルト，マルコ
ハーグ，アレクサンドラ
エムネ，シャルロット
フリューゲル，アレクサンダー
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BASF SE
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BASF SE
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Publication of JP2020502370A publication Critical patent/JP2020502370A/ja
Publication of JP2020502370A5 publication Critical patent/JP2020502370A5/ja
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
JP2019533638A 2016-12-20 2017-12-19 ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 Withdrawn JP2020502370A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16205553.7 2016-12-20
EP16205553 2016-12-20
PCT/EP2017/083603 WO2018114985A1 (en) 2016-12-20 2017-12-19 Composition for metal plating comprising suppressing agent for void free filling

Publications (2)

Publication Number Publication Date
JP2020502370A true JP2020502370A (ja) 2020-01-23
JP2020502370A5 JP2020502370A5 (enExample) 2021-02-04

Family

ID=57860616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019533638A Withdrawn JP2020502370A (ja) 2016-12-20 2017-12-19 ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物

Country Status (8)

Country Link
US (1) US11926918B2 (enExample)
EP (1) EP3559317B1 (enExample)
JP (1) JP2020502370A (enExample)
KR (1) KR102457310B1 (enExample)
CN (2) CN115182004A (enExample)
IL (1) IL267332A (enExample)
TW (1) TWI746746B (enExample)
WO (1) WO2018114985A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023517009A (ja) * 2020-03-06 2023-04-21 ビーエーエスエフ ソシエタス・ヨーロピア ポリカルボキシレートエーテル抑制剤を用いる電気めっき
JP2023524809A (ja) * 2020-05-08 2023-06-13 ラム リサーチ コーポレーション コバルト、ニッケル、および、それらの合金の電気メッキ
JP2023538991A (ja) * 2021-07-30 2023-09-13 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物
JP2023541754A (ja) * 2021-07-30 2023-10-04 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物

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EP3679179B1 (en) 2017-09-04 2023-10-11 Basf Se Composition for metal electroplating comprising leveling agent
US20190186032A1 (en) * 2017-12-14 2019-06-20 Soulbrain Co., Ltd. Composition for cobalt plating and method for forming metal wiring using the same
KR102653074B1 (ko) 2017-12-20 2024-03-29 바스프 에스이 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물
JP2021522410A (ja) 2018-04-20 2021-08-30 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ 抑制剤を含むスズ又はスズ合金電気メッキのための組成物
CN111690958B (zh) * 2019-03-15 2023-07-28 上海新阳半导体材料股份有限公司 一种锡镀液、其制备方法和应用
US12559852B2 (en) 2019-09-16 2026-02-24 Basf Se Composition for tin-silver alloy electroplating comprising a complexing agent
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN110938848B (zh) * 2019-12-26 2021-05-11 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
IL296980A (en) 2020-04-03 2022-12-01 Basf Se The composition for electrodeposition of copper bumps containing a polyaminoamide compensator
US11280014B2 (en) * 2020-06-05 2022-03-22 Macdermid Enthone Inc. Silver/tin electroplating bath and method of using the same
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
JP7781850B2 (ja) 2020-07-13 2025-12-08 ビーエーエスエフ ソシエタス・ヨーロピア コバルトシード上の銅電気メッキ用組成物
US11384446B2 (en) * 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
JP2024500793A (ja) * 2020-12-18 2024-01-10 ビーエーエスエフ ソシエタス・ヨーロピア スズ又はスズ合金電気めっきするための、平滑化剤を含む組成物
CN117795135A (zh) * 2021-08-05 2024-03-29 麦克德米德乐思公司 用于电沉积纳米孪晶铜的组合物和方法
EP4409058B1 (en) 2021-10-01 2025-11-05 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
US20230203694A1 (en) * 2021-12-29 2023-06-29 Basf Se Alkaline composition for copper electroplating comprising a grain refiner
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
KR20250124348A (ko) 2022-12-19 2025-08-19 바스프 에스이 구리 나노트윈 전착용 조성물
KR20260046113A (ko) 2023-08-03 2026-04-06 바스프 에스이 금속 시드 상의 구리 전기도금을 위한 조성물
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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SG174264A1 (en) * 2009-04-07 2011-10-28 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023517009A (ja) * 2020-03-06 2023-04-21 ビーエーエスエフ ソシエタス・ヨーロピア ポリカルボキシレートエーテル抑制剤を用いる電気めっき
JP7840860B2 (ja) 2020-03-06 2026-04-06 ベーアーエスエフ・エスエー ポリカルボキシレートエーテル抑制剤を用いる電気めっき
JP2023524809A (ja) * 2020-05-08 2023-06-13 ラム リサーチ コーポレーション コバルト、ニッケル、および、それらの合金の電気メッキ
JP7799623B2 (ja) 2020-05-08 2026-01-15 ラム リサーチ コーポレーション コバルト、ニッケル、および、それらの合金の電気メッキ
JP2023538991A (ja) * 2021-07-30 2023-09-13 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物
JP2023541754A (ja) * 2021-07-30 2023-10-04 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物
US12522559B2 (en) 2021-07-30 2026-01-13 Ymt Co., Ltd. Leveling agent and electrolytic composition for filling via hole

Also Published As

Publication number Publication date
IL267332A (en) 2019-08-29
CN115182004A (zh) 2022-10-14
EP3559317A1 (en) 2019-10-30
CN110100048B (zh) 2022-06-21
TWI746746B (zh) 2021-11-21
US20190309429A1 (en) 2019-10-10
KR20190091360A (ko) 2019-08-05
TW201835388A (zh) 2018-10-01
WO2018114985A1 (en) 2018-06-28
EP3559317B1 (en) 2025-02-12
CN110100048A (zh) 2019-08-06
US11926918B2 (en) 2024-03-12
KR102457310B1 (ko) 2022-10-20

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