JP2020502370A - ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 - Google Patents

ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 Download PDF

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Publication number
JP2020502370A
JP2020502370A JP2019533638A JP2019533638A JP2020502370A JP 2020502370 A JP2020502370 A JP 2020502370A JP 2019533638 A JP2019533638 A JP 2019533638A JP 2019533638 A JP2019533638 A JP 2019533638A JP 2020502370 A JP2020502370 A JP 2020502370A
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Japan
Prior art keywords
copper
formula
suppressor
hours
composition according
Prior art date
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Withdrawn
Application number
JP2019533638A
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English (en)
Japanese (ja)
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JP2020502370A5 (enExample
Inventor
パトリク キーンレ，マルセル
パトリク キーンレ，マルセル
マイアー，ディーター
アルノルト，マルコ
ハーグ，アレクサンドラ
エムネ，シャルロット
フリューゲル，アレクサンダー
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BASF SE
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BASF SE
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Application filed by BASF SE filed Critical BASF SE
Publication of JP2020502370A publication Critical patent/JP2020502370A/ja
Publication of JP2020502370A5 publication Critical patent/JP2020502370A5/ja
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
JP2019533638A 2016-12-20 2017-12-19 ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 Withdrawn JP2020502370A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16205553 2016-12-20
EP16205553.7 2016-12-20
PCT/EP2017/083603 WO2018114985A1 (en) 2016-12-20 2017-12-19 Composition for metal plating comprising suppressing agent for void free filling

Publications (2)

Publication Number Publication Date
JP2020502370A true JP2020502370A (ja) 2020-01-23
JP2020502370A5 JP2020502370A5 (enExample) 2021-02-04

Family

ID=57860616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019533638A Withdrawn JP2020502370A (ja) 2016-12-20 2017-12-19 ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物

Country Status (8)

Country Link
US (1) US11926918B2 (enExample)
EP (1) EP3559317B1 (enExample)
JP (1) JP2020502370A (enExample)
KR (1) KR102457310B1 (enExample)
CN (2) CN115182004A (enExample)
IL (1) IL267332A (enExample)
TW (1) TWI746746B (enExample)
WO (1) WO2018114985A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023517009A (ja) * 2020-03-06 2023-04-21 ビーエーエスエフ ソシエタス・ヨーロピア ポリカルボキシレートエーテル抑制剤を用いる電気めっき
JP2023524809A (ja) * 2020-05-08 2023-06-13 ラム リサーチ コーポレーション コバルト、ニッケル、および、それらの合金の電気メッキ
JP2023538991A (ja) * 2021-07-30 2023-09-13 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物
JP2023541754A (ja) * 2021-07-30 2023-10-04 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物

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US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
US20190186032A1 (en) * 2017-12-14 2019-06-20 Soulbrain Co., Ltd. Composition for cobalt plating and method for forming metal wiring using the same
EP3728702B1 (en) 2017-12-20 2021-09-22 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
KR102769982B1 (ko) 2018-04-20 2025-02-18 바스프 에스이 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물
CN111690958B (zh) * 2019-03-15 2023-07-28 上海新阳半导体材料股份有限公司 一种锡镀液、其制备方法和应用
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058336A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN110938848B (zh) * 2019-12-26 2021-05-11 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
EP4127025B1 (en) 2020-04-03 2025-10-01 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
US11280014B2 (en) 2020-06-05 2022-03-22 Macdermid Enthone Inc. Silver/tin electroplating bath and method of using the same
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US20230265576A1 (en) * 2020-07-13 2023-08-24 Basf Se Composition For Copper Electroplating On A Cobalt Seed
US11384446B2 (en) * 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
US20240318342A1 (en) * 2021-08-05 2024-09-26 Macdermid Enthone Inc. Compositions and methods for the eletrodeposition of nanotwinned copper
IL311715A (en) 2021-10-01 2024-05-01 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
US20230203694A1 (en) * 2021-12-29 2023-06-29 Basf Se Alkaline composition for copper electroplating comprising a grain refiner
CN119522299A (zh) 2022-07-07 2025-02-25 巴斯夫欧洲公司 包含聚氨基酰胺型化合物的组合物用于铜纳米孪晶电沉积的用途
TW202432898A (zh) 2022-12-19 2024-08-16 德商巴斯夫歐洲公司 用於電沉積奈米雙晶銅之組成物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023517009A (ja) * 2020-03-06 2023-04-21 ビーエーエスエフ ソシエタス・ヨーロピア ポリカルボキシレートエーテル抑制剤を用いる電気めっき
JP2023524809A (ja) * 2020-05-08 2023-06-13 ラム リサーチ コーポレーション コバルト、ニッケル、および、それらの合金の電気メッキ
JP2023538991A (ja) * 2021-07-30 2023-09-13 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物
JP2023541754A (ja) * 2021-07-30 2023-10-04 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物

Also Published As

Publication number Publication date
TW201835388A (zh) 2018-10-01
CN110100048B (zh) 2022-06-21
US20190309429A1 (en) 2019-10-10
CN115182004A (zh) 2022-10-14
EP3559317B1 (en) 2025-02-12
KR102457310B1 (ko) 2022-10-20
KR20190091360A (ko) 2019-08-05
TWI746746B (zh) 2021-11-21
WO2018114985A1 (en) 2018-06-28
IL267332A (en) 2019-08-29
CN110100048A (zh) 2019-08-06
EP3559317A1 (en) 2019-10-30
US11926918B2 (en) 2024-03-12

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