TWI746746B - 包含用於無空隙填充的抑制劑之用於金屬電鍍的組成物 - Google Patents

包含用於無空隙填充的抑制劑之用於金屬電鍍的組成物 Download PDF

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Publication number
TWI746746B
TWI746746B TW106144836A TW106144836A TWI746746B TW I746746 B TWI746746 B TW I746746B TW 106144836 A TW106144836 A TW 106144836A TW 106144836 A TW106144836 A TW 106144836A TW I746746 B TWI746746 B TW I746746B
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TW
Taiwan
Prior art keywords
item
composition
patent application
scope
copper
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TW106144836A
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English (en)
Chinese (zh)
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TW201835388A (zh
Inventor
馬塞 派翠克 琴勒
迪耶特 邁爾
馬可 亞諾
亞莉珊卓 哈格
夏洛特 艾姆尼
亞歷山大 福路格
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德商巴斯夫歐洲公司
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Publication of TW201835388A publication Critical patent/TW201835388A/zh
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
TW106144836A 2016-12-20 2017-12-20 包含用於無空隙填充的抑制劑之用於金屬電鍍的組成物 TWI746746B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16205553.7 2016-12-20
EP16205553 2016-12-20
??16205553.7 2016-12-20

Publications (2)

Publication Number Publication Date
TW201835388A TW201835388A (zh) 2018-10-01
TWI746746B true TWI746746B (zh) 2021-11-21

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TW106144836A TWI746746B (zh) 2016-12-20 2017-12-20 包含用於無空隙填充的抑制劑之用於金屬電鍍的組成物

Country Status (8)

Country Link
US (1) US11926918B2 (enExample)
EP (1) EP3559317B1 (enExample)
JP (1) JP2020502370A (enExample)
KR (1) KR102457310B1 (enExample)
CN (2) CN115182004A (enExample)
IL (1) IL267332A (enExample)
TW (1) TWI746746B (enExample)
WO (1) WO2018114985A1 (enExample)

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KR102339867B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
KR102339868B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
CN117795135A (zh) * 2021-08-05 2024-03-29 麦克德米德乐思公司 用于电沉积纳米孪晶铜的组合物和方法
EP4409058B1 (en) 2021-10-01 2025-11-05 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
US20230203694A1 (en) * 2021-12-29 2023-06-29 Basf Se Alkaline composition for copper electroplating comprising a grain refiner
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
KR20250124348A (ko) 2022-12-19 2025-08-19 바스프 에스이 구리 나노트윈 전착용 조성물
KR20260046113A (ko) 2023-08-03 2026-04-06 바스프 에스이 금속 시드 상의 구리 전기도금을 위한 조성물
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TW201109477A (en) * 2009-07-30 2011-03-16 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
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Also Published As

Publication number Publication date
IL267332A (en) 2019-08-29
CN115182004A (zh) 2022-10-14
EP3559317A1 (en) 2019-10-30
CN110100048B (zh) 2022-06-21
US20190309429A1 (en) 2019-10-10
KR20190091360A (ko) 2019-08-05
TW201835388A (zh) 2018-10-01
WO2018114985A1 (en) 2018-06-28
EP3559317B1 (en) 2025-02-12
CN110100048A (zh) 2019-08-06
US11926918B2 (en) 2024-03-12
KR102457310B1 (ko) 2022-10-20
JP2020502370A (ja) 2020-01-23

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