TWI746746B - 包含用於無空隙填充的抑制劑之用於金屬電鍍的組成物 - Google Patents

包含用於無空隙填充的抑制劑之用於金屬電鍍的組成物 Download PDF

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Publication number
TWI746746B
TWI746746B TW106144836A TW106144836A TWI746746B TW I746746 B TWI746746 B TW I746746B TW 106144836 A TW106144836 A TW 106144836A TW 106144836 A TW106144836 A TW 106144836A TW I746746 B TWI746746 B TW I746746B
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Taiwan
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item
composition
patent application
scope
copper
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TW106144836A
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English (en)
Chinese (zh)
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TW201835388A (zh
Inventor
馬塞 派翠克 琴勒
迪耶特 邁爾
馬可 亞諾
亞莉珊卓 哈格
夏洛特 艾姆尼
亞歷山大 福路格
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德商巴斯夫歐洲公司
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
TW106144836A 2016-12-20 2017-12-20 包含用於無空隙填充的抑制劑之用於金屬電鍍的組成物 TWI746746B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
??16205553.7 2016-12-20
EP16205553.7 2016-12-20
EP16205553 2016-12-20

Publications (2)

Publication Number Publication Date
TW201835388A TW201835388A (zh) 2018-10-01
TWI746746B true TWI746746B (zh) 2021-11-21

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TW106144836A TWI746746B (zh) 2016-12-20 2017-12-20 包含用於無空隙填充的抑制劑之用於金屬電鍍的組成物

Country Status (8)

Country Link
US (1) US11926918B2 (enExample)
EP (1) EP3559317B1 (enExample)
JP (1) JP2020502370A (enExample)
KR (1) KR102457310B1 (enExample)
CN (2) CN110100048B (enExample)
IL (1) IL267332A (enExample)
TW (1) TWI746746B (enExample)
WO (1) WO2018114985A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
US20190186032A1 (en) * 2017-12-14 2019-06-20 Soulbrain Co., Ltd. Composition for cobalt plating and method for forming metal wiring using the same
WO2019121092A1 (en) * 2017-12-20 2019-06-27 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
CN112135929B (zh) * 2018-04-20 2023-12-15 巴斯夫欧洲公司 包含抑制剂的用于锡或锡合金电镀的组合物
CN111690958B (zh) * 2019-03-15 2023-07-28 上海新阳半导体材料股份有限公司 一种锡镀液、其制备方法和应用
US20220356592A1 (en) 2019-09-27 2022-11-10 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
US20220333262A1 (en) 2019-09-27 2022-10-20 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN110938848B (zh) * 2019-12-26 2021-05-11 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
WO2021175935A1 (en) * 2020-03-06 2021-09-10 Basf Se Electroplating with a polycarboxylate ether supressor
EP4127025B1 (en) 2020-04-03 2025-10-01 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
WO2021225827A1 (en) * 2020-05-08 2021-11-11 Lam Research Corporation Electroplating cobalt, nickel, and alloys thereof
US11280014B2 (en) 2020-06-05 2022-03-22 Macdermid Enthone Inc. Silver/tin electroplating bath and method of using the same
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US20230265576A1 (en) * 2020-07-13 2023-08-24 Basf Se Composition For Copper Electroplating On A Cobalt Seed
US11384446B2 (en) * 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
KR102339867B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
KR102339868B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
US20240318342A1 (en) * 2021-08-05 2024-09-26 Macdermid Enthone Inc. Compositions and methods for the eletrodeposition of nanotwinned copper
EP4409058B1 (en) 2021-10-01 2025-11-05 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
US20230203694A1 (en) * 2021-12-29 2023-06-29 Basf Se Alkaline composition for copper electroplating comprising a grain refiner
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201033409A (en) * 2008-12-19 2010-09-16 Basf Se Composition for metal electroplating comprising leveling agent
TW201109477A (en) * 2009-07-30 2011-03-16 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
TW201111558A (en) * 2009-07-30 2011-04-01 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
TW201303089A (zh) * 2011-06-01 2013-01-16 Basf Se 包含用於由下而上填充矽穿孔及內連線特徵之添加劑之金屬電鍍用組合物

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4093594A (en) * 1976-08-18 1978-06-06 Celanese Polymer Specialties Company Process for preparing cathodically depositable coating compositions
US4146442A (en) * 1978-05-12 1979-03-27 R. O. Hull & Company, Inc. Zinc electroplating baths and process
US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US4871429A (en) 1981-09-11 1989-10-03 Learonal, Inc Limiting tin sludge formation in tin or tin/lead electroplating solutions
JP3301707B2 (ja) 1997-01-20 2002-07-15 ディップソール株式会社 錫−銀合金酸性電気めっき浴
JP4296358B2 (ja) 1998-01-21 2009-07-15 石原薬品株式会社 銀及び銀合金メッキ浴
US6444110B2 (en) 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
US7628903B1 (en) 2000-05-02 2009-12-08 Ishihara Chemical Co., Ltd. Silver and silver alloy plating bath
US6679983B2 (en) 2000-10-13 2004-01-20 Shipley Company, L.L.C. Method of electrodepositing copper
KR20030048110A (ko) 2000-11-03 2003-06-18 쉬플리 캄파니, 엘.엘.씨. 전자 디바이스 제조용 금속의 전기화학적 공침착
US6881732B2 (en) * 2002-06-13 2005-04-19 Chelator Llc Neuroprotection and cardioprotection afforded by chelators with high affinity and specificity for cations of first transition series elements
TWI400365B (zh) 2004-11-12 2013-07-01 Enthone 微電子裝置上的銅電沈積
BRPI0721265A2 (pt) * 2006-12-21 2014-04-01 Basf Se Uso de polímeros termicamente sensíveis, processo para a lavagem de têxteis coloridos, copolímero, e, formulação de composição de lavagem.
FR2911878B1 (fr) * 2007-01-31 2012-11-02 Rhodia Recherches & Tech Procede de preparation de polyhydroxy-urethanes.
US20110077376A1 (en) * 2008-05-30 2011-03-31 Katsumi Tokumoto Process for producing hydroxyalkyltriethylenediamine, and catalyst composition for the production of polyurethane resin using it
US20120027948A1 (en) 2009-04-07 2012-02-02 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
JP5702359B2 (ja) * 2009-04-07 2015-04-15 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物
RU2542219C2 (ru) 2009-04-07 2015-02-20 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности
WO2010115757A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
EP3848417B1 (en) 2009-11-27 2025-01-08 Basf Se Composition for copper electroplating comprising leveling agent
SG185736A1 (en) 2010-06-01 2012-12-28 Basf Se Composition for metal electroplating comprising leveling agent
SG10201510522XA (en) 2010-12-21 2016-01-28 Basf Se Composition for metal electroplating comprising leveling agent
CN102212305B (zh) * 2011-05-03 2013-07-31 中国科学院宁波材料技术与工程研究所 一种改进羟烷基酰胺/聚酯粉末涂料针孔和流平性的方法
DE102011116764A1 (de) * 2011-10-22 2013-04-25 Gonzalo Urrutia Desmaison Polykationen und Derivate
US8980077B2 (en) 2012-03-30 2015-03-17 Rohm And Haas Electronic Materials Llc Plating bath and method
CN104797633B (zh) * 2012-11-09 2018-04-24 巴斯夫欧洲公司 用于金属电镀的包含调平剂的组合物
US20150122662A1 (en) * 2013-11-05 2015-05-07 Rohm And Haas Electronic Materials Llc Plating bath and method
US10519557B2 (en) * 2016-02-12 2019-12-31 Macdermid Enthone Inc. Leveler compositions for use in copper deposition in manufacture of microelectronics
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201033409A (en) * 2008-12-19 2010-09-16 Basf Se Composition for metal electroplating comprising leveling agent
TW201109477A (en) * 2009-07-30 2011-03-16 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
TW201111558A (en) * 2009-07-30 2011-04-01 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
TW201303089A (zh) * 2011-06-01 2013-01-16 Basf Se 包含用於由下而上填充矽穿孔及內連線特徵之添加劑之金屬電鍍用組合物

Also Published As

Publication number Publication date
CN115182004A (zh) 2022-10-14
KR20190091360A (ko) 2019-08-05
CN110100048A (zh) 2019-08-06
US11926918B2 (en) 2024-03-12
CN110100048B (zh) 2022-06-21
TW201835388A (zh) 2018-10-01
EP3559317B1 (en) 2025-02-12
IL267332A (en) 2019-08-29
EP3559317A1 (en) 2019-10-30
JP2020502370A (ja) 2020-01-23
WO2018114985A1 (en) 2018-06-28
KR102457310B1 (ko) 2022-10-20
US20190309429A1 (en) 2019-10-10

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