IL267332A - A preparation for metal coating containing a suppressant for filling without a void - Google Patents

A preparation for metal coating containing a suppressant for filling without a void

Info

Publication number
IL267332A
IL267332A IL267332A IL26733219A IL267332A IL 267332 A IL267332 A IL 267332A IL 267332 A IL267332 A IL 267332A IL 26733219 A IL26733219 A IL 26733219A IL 267332 A IL267332 A IL 267332A
Authority
IL
Israel
Prior art keywords
composition
metal plating
suppressing agent
void free
free filling
Prior art date
Application number
IL267332A
Other languages
English (en)
Hebrew (he)
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of IL267332A publication Critical patent/IL267332A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/30Electroplating: Baths therefor from solutions of tin
    • C25D3/32Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/60Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Polyethers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
IL267332A 2016-12-20 2019-06-13 A preparation for metal coating containing a suppressant for filling without a void IL267332A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16205553 2016-12-20
PCT/EP2017/083603 WO2018114985A1 (en) 2016-12-20 2017-12-19 Composition for metal plating comprising suppressing agent for void free filling

Publications (1)

Publication Number Publication Date
IL267332A true IL267332A (en) 2019-08-29

Family

ID=57860616

Family Applications (1)

Application Number Title Priority Date Filing Date
IL267332A IL267332A (en) 2016-12-20 2019-06-13 A preparation for metal coating containing a suppressant for filling without a void

Country Status (8)

Country Link
US (1) US11926918B2 (enExample)
EP (1) EP3559317B1 (enExample)
JP (1) JP2020502370A (enExample)
KR (1) KR102457310B1 (enExample)
CN (2) CN110100048B (enExample)
IL (1) IL267332A (enExample)
TW (1) TWI746746B (enExample)
WO (1) WO2018114985A1 (enExample)

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KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
US20190186032A1 (en) * 2017-12-14 2019-06-20 Soulbrain Co., Ltd. Composition for cobalt plating and method for forming metal wiring using the same
WO2019121092A1 (en) * 2017-12-20 2019-06-27 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
US11242606B2 (en) 2018-04-20 2022-02-08 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
CN111690958B (zh) * 2019-03-15 2023-07-28 上海新阳半导体材料股份有限公司 一种锡镀液、其制备方法和应用
WO2021052817A1 (en) 2019-09-16 2021-03-25 Basf Se Composition for tin-silver alloy electroplating comprising a complexing agent
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN110938848B (zh) * 2019-12-26 2021-05-11 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
CN115190921A (zh) * 2020-03-06 2022-10-14 巴斯夫欧洲公司 使用聚羧酸化物醚抑制剂的电镀
US12134834B2 (en) 2020-04-03 2024-11-05 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
CN115867695A (zh) * 2020-05-08 2023-03-28 朗姆研究公司 电镀钴、镍及其合金
US11280014B2 (en) 2020-06-05 2022-03-22 Macdermid Enthone Inc. Silver/tin electroplating bath and method of using the same
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
KR20230037553A (ko) 2020-07-13 2023-03-16 바스프 에스이 코발트 시드 상의 구리 전기도금을 위한 조성물
US11384446B2 (en) * 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
US12509790B2 (en) * 2020-12-18 2025-12-30 Basf Se Composition for tin or tin alloy electroplating comprising leveling agent
KR102339867B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
KR102339868B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
WO2023014524A1 (en) * 2021-08-05 2023-02-09 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
IL311715A (en) 2021-10-01 2024-05-01 Basf Se The composition for electrical deposition of copper containing a polyaminoamide compensator
US20230203694A1 (en) * 2021-12-29 2023-06-29 Basf Se Alkaline composition for copper electroplating comprising a grain refiner
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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JP3301707B2 (ja) 1997-01-20 2002-07-15 ディップソール株式会社 錫−銀合金酸性電気めっき浴
JP4296358B2 (ja) 1998-01-21 2009-07-15 石原薬品株式会社 銀及び銀合金メッキ浴
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EP2199315B1 (en) 2008-12-19 2013-12-11 Basf Se Composition for metal electroplating comprising leveling agent
EP2417283B1 (en) * 2009-04-07 2014-07-30 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115757A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
KR20170034948A (ko) * 2009-04-07 2017-03-29 바스프 에스이 무공극 서브미크론 특징부 충전을 위한 억제제를 포함하는 금속 도금용 조성물
RU2542219C2 (ru) 2009-04-07 2015-02-20 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности
SG177685A1 (en) * 2009-07-30 2012-02-28 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
EP2459779B1 (en) * 2009-07-30 2015-09-09 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
JP5952738B2 (ja) 2009-11-27 2016-07-13 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 平滑化剤を含む金属電気メッキのための組成物
CN102939339B (zh) * 2010-06-01 2016-02-17 巴斯夫欧洲公司 包含流平试剂的金属电镀用组合物
WO2012085811A1 (en) 2010-12-21 2012-06-28 Basf Se Composition for metal electroplating comprising leveling agent
CN102212305B (zh) * 2011-05-03 2013-07-31 中国科学院宁波材料技术与工程研究所 一种改进羟烷基酰胺/聚酯粉末涂料针孔和流平性的方法
JP6062425B2 (ja) * 2011-06-01 2017-01-18 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se シリコン貫通ビアおよび相互接続フィーチャーのボトムアップ充填のための添加剤を含む金属電気めっきのための組成物
DE102011116764A1 (de) * 2011-10-22 2013-04-25 Gonzalo Urrutia Desmaison Polykationen und Derivate
US8980077B2 (en) 2012-03-30 2015-03-17 Rohm And Haas Electronic Materials Llc Plating bath and method
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
US20150122662A1 (en) * 2013-11-05 2015-05-07 Rohm And Haas Electronic Materials Llc Plating bath and method
US10519557B2 (en) * 2016-02-12 2019-12-31 Macdermid Enthone Inc. Leveler compositions for use in copper deposition in manufacture of microelectronics
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling

Also Published As

Publication number Publication date
EP3559317B1 (en) 2025-02-12
WO2018114985A1 (en) 2018-06-28
JP2020502370A (ja) 2020-01-23
KR102457310B1 (ko) 2022-10-20
TWI746746B (zh) 2021-11-21
CN115182004A (zh) 2022-10-14
TW201835388A (zh) 2018-10-01
CN110100048B (zh) 2022-06-21
CN110100048A (zh) 2019-08-06
US11926918B2 (en) 2024-03-12
KR20190091360A (ko) 2019-08-05
US20190309429A1 (en) 2019-10-10
EP3559317A1 (en) 2019-10-30

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