IL267332A - A preparation for metal coating containing a suppressant for filling without a void - Google Patents

A preparation for metal coating containing a suppressant for filling without a void

Info

Publication number
IL267332A
IL267332A IL267332A IL26733219A IL267332A IL 267332 A IL267332 A IL 267332A IL 267332 A IL267332 A IL 267332A IL 26733219 A IL26733219 A IL 26733219A IL 267332 A IL267332 A IL 267332A
Authority
IL
Israel
Prior art keywords
composition
metal plating
suppressing agent
void free
free filling
Prior art date
Application number
IL267332A
Other languages
English (en)
Hebrew (he)
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of IL267332A publication Critical patent/IL267332A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
IL267332A 2016-12-20 2019-06-13 A preparation for metal coating containing a suppressant for filling without a void IL267332A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16205553 2016-12-20
PCT/EP2017/083603 WO2018114985A1 (en) 2016-12-20 2017-12-19 Composition for metal plating comprising suppressing agent for void free filling

Publications (1)

Publication Number Publication Date
IL267332A true IL267332A (en) 2019-08-29

Family

ID=57860616

Family Applications (1)

Application Number Title Priority Date Filing Date
IL267332A IL267332A (en) 2016-12-20 2019-06-13 A preparation for metal coating containing a suppressant for filling without a void

Country Status (8)

Country Link
US (1) US11926918B2 (enExample)
EP (1) EP3559317B1 (enExample)
JP (1) JP2020502370A (enExample)
KR (1) KR102457310B1 (enExample)
CN (2) CN115182004A (enExample)
IL (1) IL267332A (enExample)
TW (1) TWI746746B (enExample)
WO (1) WO2018114985A1 (enExample)

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EP3679179B1 (en) 2017-09-04 2023-10-11 Basf Se Composition for metal electroplating comprising leveling agent
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KR102653074B1 (ko) 2017-12-20 2024-03-29 바스프 에스이 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물
JP2021522410A (ja) 2018-04-20 2021-08-30 ビーエイエスエフ・ソシエタス・エウロパエアBasf Se 抑制剤を含むスズ又はスズ合金電気メッキのための組成物
CN111690958B (zh) * 2019-03-15 2023-07-28 上海新阳半导体材料股份有限公司 一种锡镀液、其制备方法和应用
US12559852B2 (en) 2019-09-16 2026-02-24 Basf Se Composition for tin-silver alloy electroplating comprising a complexing agent
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN110938848B (zh) * 2019-12-26 2021-05-11 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
EP4115006B1 (en) 2020-03-06 2025-06-25 Basf Se Electroplating with a polycarboxylate ether supressor
IL296980A (en) 2020-04-03 2022-12-01 Basf Se The composition for electrodeposition of copper bumps containing a polyaminoamide compensator
JP7799623B2 (ja) * 2020-05-08 2026-01-15 ラム リサーチ コーポレーション コバルト、ニッケル、および、それらの合金の電気メッキ
US11280014B2 (en) * 2020-06-05 2022-03-22 Macdermid Enthone Inc. Silver/tin electroplating bath and method of using the same
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
JP7781850B2 (ja) 2020-07-13 2025-12-08 ビーエーエスエフ ソシエタス・ヨーロピア コバルトシード上の銅電気メッキ用組成物
US11384446B2 (en) * 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
JP2024500793A (ja) * 2020-12-18 2024-01-10 ビーエーエスエフ ソシエタス・ヨーロピア スズ又はスズ合金電気めっきするための、平滑化剤を含む組成物
KR102339867B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
KR102339868B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
CN117795135A (zh) * 2021-08-05 2024-03-29 麦克德米德乐思公司 用于电沉积纳米孪晶铜的组合物和方法
EP4409058B1 (en) 2021-10-01 2025-11-05 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
US20230203694A1 (en) * 2021-12-29 2023-06-29 Basf Se Alkaline composition for copper electroplating comprising a grain refiner
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
KR20250124348A (ko) 2022-12-19 2025-08-19 바스프 에스이 구리 나노트윈 전착용 조성물
KR20260046113A (ko) 2023-08-03 2026-04-06 바스프 에스이 금속 시드 상의 구리 전기도금을 위한 조성물
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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SG174264A1 (en) * 2009-04-07 2011-10-28 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
RU2542219C2 (ru) 2009-04-07 2015-02-20 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности
WO2010115756A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115757A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2011012462A2 (en) * 2009-07-30 2011-02-03 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
JP5775077B2 (ja) * 2009-07-30 2015-09-09 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 無ボイドでのサブミクロン構造物充填用の、抑制剤を含有する金属メッキ組成物
JP5952738B2 (ja) 2009-11-27 2016-07-13 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 平滑化剤を含む金属電気メッキのための組成物
EP2576696B1 (en) * 2010-06-01 2017-10-04 Basf Se Composition for metal electroplating comprising leveling agent
EP2655457B1 (en) 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
CN102212305B (zh) * 2011-05-03 2013-07-31 中国科学院宁波材料技术与工程研究所 一种改进羟烷基酰胺/聚酯粉末涂料针孔和流平性的方法
RU2013158459A (ru) * 2011-06-01 2015-07-20 Басф Се Композиция для электроосаждения металла, содержащая добавку для заполнения снизу вверх переходных отверстий в кремнии и межсоединительных элементов
DE102011116764A1 (de) * 2011-10-22 2013-04-25 Gonzalo Urrutia Desmaison Polykationen und Derivate
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US20150122662A1 (en) * 2013-11-05 2015-05-07 Rohm And Haas Electronic Materials Llc Plating bath and method
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WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling

Also Published As

Publication number Publication date
CN115182004A (zh) 2022-10-14
EP3559317A1 (en) 2019-10-30
CN110100048B (zh) 2022-06-21
TWI746746B (zh) 2021-11-21
US20190309429A1 (en) 2019-10-10
KR20190091360A (ko) 2019-08-05
TW201835388A (zh) 2018-10-01
WO2018114985A1 (en) 2018-06-28
EP3559317B1 (en) 2025-02-12
CN110100048A (zh) 2019-08-06
US11926918B2 (en) 2024-03-12
KR102457310B1 (ko) 2022-10-20
JP2020502370A (ja) 2020-01-23

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