KR102457310B1 - 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물 - Google Patents

무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물 Download PDF

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KR102457310B1
KR102457310B1 KR1020197020953A KR20197020953A KR102457310B1 KR 102457310 B1 KR102457310 B1 KR 102457310B1 KR 1020197020953 A KR1020197020953 A KR 1020197020953A KR 20197020953 A KR20197020953 A KR 20197020953A KR 102457310 B1 KR102457310 B1 KR 102457310B1
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copper
metal
inhibitor
electroplating
hours
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KR20190091360A (ko
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마르켈 파트릭 킨레
디터 마이어
마르코 아르놀트
알렉산드라 하크
하를로테 엠네트
알렉산더 플뤼겔
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바스프 에스이
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/30Electroplating: Baths therefor from solutions of tin
    • C25D3/32Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/60Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
KR1020197020953A 2016-12-20 2017-12-19 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물 Active KR102457310B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16205553 2016-12-20
EP16205553.7 2016-12-20
PCT/EP2017/083603 WO2018114985A1 (en) 2016-12-20 2017-12-19 Composition for metal plating comprising suppressing agent for void free filling

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KR20190091360A KR20190091360A (ko) 2019-08-05
KR102457310B1 true KR102457310B1 (ko) 2022-10-20

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Country Link
US (1) US11926918B2 (enExample)
EP (1) EP3559317B1 (enExample)
JP (1) JP2020502370A (enExample)
KR (1) KR102457310B1 (enExample)
CN (2) CN115182004A (enExample)
IL (1) IL267332A (enExample)
TW (1) TWI746746B (enExample)
WO (1) WO2018114985A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
US20190186032A1 (en) * 2017-12-14 2019-06-20 Soulbrain Co., Ltd. Composition for cobalt plating and method for forming metal wiring using the same
EP3728702B1 (en) 2017-12-20 2021-09-22 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
KR102769982B1 (ko) 2018-04-20 2025-02-18 바스프 에스이 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물
CN111690958B (zh) * 2019-03-15 2023-07-28 上海新阳半导体材料股份有限公司 一种锡镀液、其制备方法和应用
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058336A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN110938848B (zh) * 2019-12-26 2021-05-11 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
WO2021175935A1 (en) * 2020-03-06 2021-09-10 Basf Se Electroplating with a polycarboxylate ether supressor
EP4127025B1 (en) 2020-04-03 2025-10-01 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
CN115867695A (zh) * 2020-05-08 2023-03-28 朗姆研究公司 电镀钴、镍及其合金
US11280014B2 (en) 2020-06-05 2022-03-22 Macdermid Enthone Inc. Silver/tin electroplating bath and method of using the same
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US20230265576A1 (en) * 2020-07-13 2023-08-24 Basf Se Composition For Copper Electroplating On A Cobalt Seed
US11384446B2 (en) * 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
KR102339867B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
KR102339868B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
US20240318342A1 (en) * 2021-08-05 2024-09-26 Macdermid Enthone Inc. Compositions and methods for the eletrodeposition of nanotwinned copper
IL311715A (en) 2021-10-01 2024-05-01 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
US20230203694A1 (en) * 2021-12-29 2023-06-29 Basf Se Alkaline composition for copper electroplating comprising a grain refiner
CN119522299A (zh) 2022-07-07 2025-02-25 巴斯夫欧洲公司 包含聚氨基酰胺型化合物的组合物用于铜纳米孪晶电沉积的用途
TW202432898A (zh) 2022-12-19 2024-08-16 德商巴斯夫歐洲公司 用於電沉積奈米雙晶銅之組成物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4146442A (en) 1978-05-12 1979-03-27 R. O. Hull & Company, Inc. Zinc electroplating baths and process

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4093594A (en) * 1976-08-18 1978-06-06 Celanese Polymer Specialties Company Process for preparing cathodically depositable coating compositions
US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US4871429A (en) 1981-09-11 1989-10-03 Learonal, Inc Limiting tin sludge formation in tin or tin/lead electroplating solutions
JP3301707B2 (ja) 1997-01-20 2002-07-15 ディップソール株式会社 錫−銀合金酸性電気めっき浴
JP4296358B2 (ja) 1998-01-21 2009-07-15 石原薬品株式会社 銀及び銀合金メッキ浴
US6444110B2 (en) 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
US7628903B1 (en) 2000-05-02 2009-12-08 Ishihara Chemical Co., Ltd. Silver and silver alloy plating bath
US6679983B2 (en) 2000-10-13 2004-01-20 Shipley Company, L.L.C. Method of electrodepositing copper
WO2002055762A2 (en) 2000-11-03 2002-07-18 Shipley Company, L.L.C. Electrochemical co-deposition of metals for electronic device manufacture
US6881732B2 (en) * 2002-06-13 2005-04-19 Chelator Llc Neuroprotection and cardioprotection afforded by chelators with high affinity and specificity for cations of first transition series elements
TWI400365B (zh) 2004-11-12 2013-07-01 Enthone 微電子裝置上的銅電沈積
BRPI0721265A2 (pt) * 2006-12-21 2014-04-01 Basf Se Uso de polímeros termicamente sensíveis, processo para a lavagem de têxteis coloridos, copolímero, e, formulação de composição de lavagem.
FR2911878B1 (fr) * 2007-01-31 2012-11-02 Rhodia Recherches & Tech Procede de preparation de polyhydroxy-urethanes.
US20110077376A1 (en) * 2008-05-30 2011-03-31 Katsumi Tokumoto Process for producing hydroxyalkyltriethylenediamine, and catalyst composition for the production of polyurethane resin using it
EP2199315B1 (en) * 2008-12-19 2013-12-11 Basf Se Composition for metal electroplating comprising leveling agent
US20120018310A1 (en) 2009-04-07 2012-01-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115757A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
SG10201401324YA (en) 2009-04-07 2014-08-28 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115717A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
EP2459778B1 (en) * 2009-07-30 2015-01-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN102471910B (zh) * 2009-07-30 2016-01-20 巴斯夫欧洲公司 用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物
MY156200A (en) 2009-11-27 2016-01-29 Basf Se Composition for metal electroplating comprising leveling agent
KR101891473B1 (ko) * 2010-06-01 2018-08-27 바스프 에스이 레벨링제를 포함하는 금속 전기도금용 조성물
JP5981938B2 (ja) 2010-12-21 2016-08-31 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se レベリング剤を含有する金属電解めっき組成物
CN102212305B (zh) * 2011-05-03 2013-07-31 中国科学院宁波材料技术与工程研究所 一种改进羟烷基酰胺/聚酯粉末涂料针孔和流平性的方法
EP2714807B1 (en) * 2011-06-01 2019-01-02 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
DE102011116764A1 (de) * 2011-10-22 2013-04-25 Gonzalo Urrutia Desmaison Polykationen und Derivate
US8980077B2 (en) 2012-03-30 2015-03-17 Rohm And Haas Electronic Materials Llc Plating bath and method
EP2917265B1 (en) 2012-11-09 2019-01-02 Basf Se Composition for metal electroplating comprising leveling agent
US20150122662A1 (en) * 2013-11-05 2015-05-07 Rohm And Haas Electronic Materials Llc Plating bath and method
US10519557B2 (en) * 2016-02-12 2019-12-31 Macdermid Enthone Inc. Leveler compositions for use in copper deposition in manufacture of microelectronics
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4146442A (en) 1978-05-12 1979-03-27 R. O. Hull & Company, Inc. Zinc electroplating baths and process

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TW201835388A (zh) 2018-10-01
JP2020502370A (ja) 2020-01-23
CN110100048B (zh) 2022-06-21
US20190309429A1 (en) 2019-10-10
CN115182004A (zh) 2022-10-14
EP3559317B1 (en) 2025-02-12
KR20190091360A (ko) 2019-08-05
TWI746746B (zh) 2021-11-21
WO2018114985A1 (en) 2018-06-28
IL267332A (en) 2019-08-29
CN110100048A (zh) 2019-08-06
EP3559317A1 (en) 2019-10-30
US11926918B2 (en) 2024-03-12

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