KR102457310B1 - 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물 - Google Patents

무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물 Download PDF

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KR102457310B1
KR102457310B1 KR1020197020953A KR20197020953A KR102457310B1 KR 102457310 B1 KR102457310 B1 KR 102457310B1 KR 1020197020953 A KR1020197020953 A KR 1020197020953A KR 20197020953 A KR20197020953 A KR 20197020953A KR 102457310 B1 KR102457310 B1 KR 102457310B1
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copper
metal
inhibitor
electroplating
hours
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KR20190091360A (ko
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마르켈 파트릭 킨레
디터 마이어
마르코 아르놀트
알렉산드라 하크
하를로테 엠네트
알렉산더 플뤼겔
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H01L21/2885—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Polyethers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020197020953A 2016-12-20 2017-12-19 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물 Active KR102457310B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16205553.7 2016-12-20
EP16205553 2016-12-20
PCT/EP2017/083603 WO2018114985A1 (en) 2016-12-20 2017-12-19 Composition for metal plating comprising suppressing agent for void free filling

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KR20190091360A KR20190091360A (ko) 2019-08-05
KR102457310B1 true KR102457310B1 (ko) 2022-10-20

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Country Link
US (1) US11926918B2 (enExample)
EP (1) EP3559317B1 (enExample)
JP (1) JP2020502370A (enExample)
KR (1) KR102457310B1 (enExample)
CN (2) CN110100048B (enExample)
IL (1) IL267332A (enExample)
TW (1) TWI746746B (enExample)
WO (1) WO2018114985A1 (enExample)

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US20190186032A1 (en) * 2017-12-14 2019-06-20 Soulbrain Co., Ltd. Composition for cobalt plating and method for forming metal wiring using the same
WO2019121092A1 (en) * 2017-12-20 2019-06-27 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
US11242606B2 (en) 2018-04-20 2022-02-08 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
CN111690958B (zh) * 2019-03-15 2023-07-28 上海新阳半导体材料股份有限公司 一种锡镀液、其制备方法和应用
WO2021052817A1 (en) 2019-09-16 2021-03-25 Basf Se Composition for tin-silver alloy electroplating comprising a complexing agent
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN110938848B (zh) * 2019-12-26 2021-05-11 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
CN115190921A (zh) * 2020-03-06 2022-10-14 巴斯夫欧洲公司 使用聚羧酸化物醚抑制剂的电镀
US12134834B2 (en) 2020-04-03 2024-11-05 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
CN115867695A (zh) * 2020-05-08 2023-03-28 朗姆研究公司 电镀钴、镍及其合金
US11280014B2 (en) 2020-06-05 2022-03-22 Macdermid Enthone Inc. Silver/tin electroplating bath and method of using the same
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US12509790B2 (en) * 2020-12-18 2025-12-30 Basf Se Composition for tin or tin alloy electroplating comprising leveling agent
KR102339867B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
KR102339868B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
WO2023014524A1 (en) * 2021-08-05 2023-02-09 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
IL311715A (en) 2021-10-01 2024-05-01 Basf Se The composition for electrical deposition of copper containing a polyaminoamide compensator
US20230203694A1 (en) * 2021-12-29 2023-06-29 Basf Se Alkaline composition for copper electroplating comprising a grain refiner
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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EP3559317B1 (en) 2025-02-12
WO2018114985A1 (en) 2018-06-28
JP2020502370A (ja) 2020-01-23
TWI746746B (zh) 2021-11-21
CN115182004A (zh) 2022-10-14
TW201835388A (zh) 2018-10-01
CN110100048B (zh) 2022-06-21
CN110100048A (zh) 2019-08-06
US11926918B2 (en) 2024-03-12
KR20190091360A (ko) 2019-08-05
IL267332A (en) 2019-08-29
US20190309429A1 (en) 2019-10-10
EP3559317A1 (en) 2019-10-30

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