CN115182004A - 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物 - Google Patents

包含用于无空隙填充的抑制试剂的用于金属电镀的组合物 Download PDF

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Publication number
CN115182004A
CN115182004A CN202210633931.XA CN202210633931A CN115182004A CN 115182004 A CN115182004 A CN 115182004A CN 202210633931 A CN202210633931 A CN 202210633931A CN 115182004 A CN115182004 A CN 115182004A
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CN
China
Prior art keywords
copper
electroplating
inhibitor
hours
tin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210633931.XA
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English (en)
Chinese (zh)
Inventor
M·P·基恩勒
D·梅尔
M·阿诺德
A·哈格
C·埃姆内特
A·弗鲁格尔
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BASF SE
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BASF SE
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Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of CN115182004A publication Critical patent/CN115182004A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
CN202210633931.XA 2016-12-20 2017-12-19 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物 Pending CN115182004A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP16205553 2016-12-20
EP16205553.7 2016-12-20
CN201780078648.2A CN110100048B (zh) 2016-12-20 2017-12-19 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
PCT/EP2017/083603 WO2018114985A1 (en) 2016-12-20 2017-12-19 Composition for metal plating comprising suppressing agent for void free filling

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201780078648.2A Division CN110100048B (zh) 2016-12-20 2017-12-19 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物

Publications (1)

Publication Number Publication Date
CN115182004A true CN115182004A (zh) 2022-10-14

Family

ID=57860616

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202210633931.XA Pending CN115182004A (zh) 2016-12-20 2017-12-19 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
CN201780078648.2A Active CN110100048B (zh) 2016-12-20 2017-12-19 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物

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CN201780078648.2A Active CN110100048B (zh) 2016-12-20 2017-12-19 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物

Country Status (8)

Country Link
US (1) US11926918B2 (enExample)
EP (1) EP3559317B1 (enExample)
JP (1) JP2020502370A (enExample)
KR (1) KR102457310B1 (enExample)
CN (2) CN115182004A (enExample)
IL (1) IL267332A (enExample)
TW (1) TWI746746B (enExample)
WO (1) WO2018114985A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
US20190186032A1 (en) * 2017-12-14 2019-06-20 Soulbrain Co., Ltd. Composition for cobalt plating and method for forming metal wiring using the same
EP3728702B1 (en) 2017-12-20 2021-09-22 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
KR102769982B1 (ko) 2018-04-20 2025-02-18 바스프 에스이 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물
CN111690958B (zh) * 2019-03-15 2023-07-28 上海新阳半导体材料股份有限公司 一种锡镀液、其制备方法和应用
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058336A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN110938848B (zh) * 2019-12-26 2021-05-11 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
WO2021175935A1 (en) * 2020-03-06 2021-09-10 Basf Se Electroplating with a polycarboxylate ether supressor
EP4127025B1 (en) 2020-04-03 2025-10-01 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
CN115867695A (zh) * 2020-05-08 2023-03-28 朗姆研究公司 电镀钴、镍及其合金
US11280014B2 (en) 2020-06-05 2022-03-22 Macdermid Enthone Inc. Silver/tin electroplating bath and method of using the same
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US20230265576A1 (en) * 2020-07-13 2023-08-24 Basf Se Composition For Copper Electroplating On A Cobalt Seed
US11384446B2 (en) * 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
KR102339867B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
KR102339868B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
US20240318342A1 (en) * 2021-08-05 2024-09-26 Macdermid Enthone Inc. Compositions and methods for the eletrodeposition of nanotwinned copper
IL311715A (en) 2021-10-01 2024-05-01 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
US20230203694A1 (en) * 2021-12-29 2023-06-29 Basf Se Alkaline composition for copper electroplating comprising a grain refiner
CN119522299A (zh) 2022-07-07 2025-02-25 巴斯夫欧洲公司 包含聚氨基酰胺型化合物的组合物用于铜纳米孪晶电沉积的用途
TW202432898A (zh) 2022-12-19 2024-08-16 德商巴斯夫歐洲公司 用於電沉積奈米雙晶銅之組成物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102597329A (zh) * 2009-07-30 2012-07-18 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物
CN102939339A (zh) * 2010-06-01 2013-02-20 巴斯夫欧洲公司 包含流平试剂的金属电镀用组合物
CN103270064A (zh) * 2010-12-21 2013-08-28 巴斯夫欧洲公司 包含流平剂的金属电镀用组合物
EP2868778A2 (en) * 2013-11-05 2015-05-06 Rohm and Haas Electronic Materials LLC Plating bath and method
US20150284865A1 (en) * 2012-11-09 2015-10-08 Basf Se Composition for metal electroplating comprising leveling agent

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4093594A (en) * 1976-08-18 1978-06-06 Celanese Polymer Specialties Company Process for preparing cathodically depositable coating compositions
US4146442A (en) 1978-05-12 1979-03-27 R. O. Hull & Company, Inc. Zinc electroplating baths and process
US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US4871429A (en) 1981-09-11 1989-10-03 Learonal, Inc Limiting tin sludge formation in tin or tin/lead electroplating solutions
JP3301707B2 (ja) 1997-01-20 2002-07-15 ディップソール株式会社 錫−銀合金酸性電気めっき浴
JP4296358B2 (ja) 1998-01-21 2009-07-15 石原薬品株式会社 銀及び銀合金メッキ浴
US6444110B2 (en) 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
US7628903B1 (en) 2000-05-02 2009-12-08 Ishihara Chemical Co., Ltd. Silver and silver alloy plating bath
US6679983B2 (en) 2000-10-13 2004-01-20 Shipley Company, L.L.C. Method of electrodepositing copper
WO2002055762A2 (en) 2000-11-03 2002-07-18 Shipley Company, L.L.C. Electrochemical co-deposition of metals for electronic device manufacture
US6881732B2 (en) * 2002-06-13 2005-04-19 Chelator Llc Neuroprotection and cardioprotection afforded by chelators with high affinity and specificity for cations of first transition series elements
TWI400365B (zh) 2004-11-12 2013-07-01 Enthone 微電子裝置上的銅電沈積
BRPI0721265A2 (pt) * 2006-12-21 2014-04-01 Basf Se Uso de polímeros termicamente sensíveis, processo para a lavagem de têxteis coloridos, copolímero, e, formulação de composição de lavagem.
FR2911878B1 (fr) * 2007-01-31 2012-11-02 Rhodia Recherches & Tech Procede de preparation de polyhydroxy-urethanes.
US20110077376A1 (en) * 2008-05-30 2011-03-31 Katsumi Tokumoto Process for producing hydroxyalkyltriethylenediamine, and catalyst composition for the production of polyurethane resin using it
EP2199315B1 (en) * 2008-12-19 2013-12-11 Basf Se Composition for metal electroplating comprising leveling agent
US20120018310A1 (en) 2009-04-07 2012-01-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115757A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
SG10201401324YA (en) 2009-04-07 2014-08-28 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115717A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN102471910B (zh) * 2009-07-30 2016-01-20 巴斯夫欧洲公司 用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物
MY156200A (en) 2009-11-27 2016-01-29 Basf Se Composition for metal electroplating comprising leveling agent
CN102212305B (zh) * 2011-05-03 2013-07-31 中国科学院宁波材料技术与工程研究所 一种改进羟烷基酰胺/聚酯粉末涂料针孔和流平性的方法
EP2714807B1 (en) * 2011-06-01 2019-01-02 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
DE102011116764A1 (de) * 2011-10-22 2013-04-25 Gonzalo Urrutia Desmaison Polykationen und Derivate
US8980077B2 (en) 2012-03-30 2015-03-17 Rohm And Haas Electronic Materials Llc Plating bath and method
US10519557B2 (en) * 2016-02-12 2019-12-31 Macdermid Enthone Inc. Leveler compositions for use in copper deposition in manufacture of microelectronics
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102597329A (zh) * 2009-07-30 2012-07-18 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物
CN102939339A (zh) * 2010-06-01 2013-02-20 巴斯夫欧洲公司 包含流平试剂的金属电镀用组合物
CN103270064A (zh) * 2010-12-21 2013-08-28 巴斯夫欧洲公司 包含流平剂的金属电镀用组合物
US20150284865A1 (en) * 2012-11-09 2015-10-08 Basf Se Composition for metal electroplating comprising leveling agent
EP2868778A2 (en) * 2013-11-05 2015-05-06 Rohm and Haas Electronic Materials LLC Plating bath and method

Also Published As

Publication number Publication date
TW201835388A (zh) 2018-10-01
JP2020502370A (ja) 2020-01-23
CN110100048B (zh) 2022-06-21
US20190309429A1 (en) 2019-10-10
EP3559317B1 (en) 2025-02-12
KR102457310B1 (ko) 2022-10-20
KR20190091360A (ko) 2019-08-05
TWI746746B (zh) 2021-11-21
WO2018114985A1 (en) 2018-06-28
IL267332A (en) 2019-08-29
CN110100048A (zh) 2019-08-06
EP3559317A1 (en) 2019-10-30
US11926918B2 (en) 2024-03-12

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