JP2012522897A5 - - Google Patents

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Publication number
JP2012522897A5
JP2012522897A5 JP2012503952A JP2012503952A JP2012522897A5 JP 2012522897 A5 JP2012522897 A5 JP 2012522897A5 JP 2012503952 A JP2012503952 A JP 2012503952A JP 2012503952 A JP2012503952 A JP 2012503952A JP 2012522897 A5 JP2012522897 A5 JP 2012522897A5
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JP
Japan
Prior art keywords
copper
metal
alkylene
group
present
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JP2012503952A
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English (en)
Japanese (ja)
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JP5702359B2 (ja
JP2012522897A (ja
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Priority claimed from PCT/EP2010/053881 external-priority patent/WO2010115717A1/en
Publication of JP2012522897A publication Critical patent/JP2012522897A/ja
Publication of JP2012522897A5 publication Critical patent/JP2012522897A5/ja
Application granted granted Critical
Publication of JP5702359B2 publication Critical patent/JP5702359B2/ja
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JP2012503952A 2009-04-07 2010-03-25 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 Active JP5702359B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09005106.1 2009-04-07
EP09005106 2009-04-07
US25633309P 2009-10-30 2009-10-30
US61/256,333 2009-10-30
PCT/EP2010/053881 WO2010115717A1 (en) 2009-04-07 2010-03-25 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (3)

Publication Number Publication Date
JP2012522897A JP2012522897A (ja) 2012-09-27
JP2012522897A5 true JP2012522897A5 (enExample) 2014-09-11
JP5702359B2 JP5702359B2 (ja) 2015-04-15

Family

ID=42935665

Family Applications (1)

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JP2012503952A Active JP5702359B2 (ja) 2009-04-07 2010-03-25 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物

Country Status (11)

Country Link
US (2) US20120024711A1 (enExample)
EP (1) EP2417283B1 (enExample)
JP (1) JP5702359B2 (enExample)
KR (1) KR101720365B1 (enExample)
CN (1) CN102365396B (enExample)
IL (1) IL215018B (enExample)
MY (1) MY158203A (enExample)
RU (1) RU2529607C2 (enExample)
SG (1) SG174264A1 (enExample)
TW (1) TWI489011B (enExample)
WO (1) WO2010115717A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
SG177685A1 (en) 2009-07-30 2012-02-28 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
TWI500823B (zh) 2010-03-18 2015-09-21 Basf Se 包含整平劑之金屬電鍍用組合物
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
WO2012085811A1 (en) 2010-12-21 2012-06-28 Basf Se Composition for metal electroplating comprising leveling agent
JP6062425B2 (ja) 2011-06-01 2017-01-18 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se シリコン貫通ビアおよび相互接続フィーチャーのボトムアップ充填のための添加剤を含む金属電気めっきのための組成物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US9243339B2 (en) * 2012-05-25 2016-01-26 Trevor Pearson Additives for producing copper electrodeposits having low oxygen content
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
WO2016172851A1 (en) * 2015-04-28 2016-11-03 Rohm And Haas Electronic Materials Llc Reaction products of bisanhydrids and diamines as additives for electroplating baths
EP3141633B1 (en) * 2015-09-10 2018-05-02 ATOTECH Deutschland GmbH Copper plating bath composition
EP3485069B1 (en) * 2016-07-18 2021-04-28 Basf Se Composition for cobalt plating comprising additive for void-free submicron feature filling
CN109952390A (zh) * 2016-09-22 2019-06-28 麦克德米德乐思公司 在微电子件中的铜的电沉积
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
KR102457310B1 (ko) * 2016-12-20 2022-10-20 바스프 에스이 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
WO2019121092A1 (en) * 2017-12-20 2019-06-27 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
US11242606B2 (en) * 2018-04-20 2022-02-08 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
CN110284162B (zh) * 2019-07-22 2020-06-30 广州三孚新材料科技股份有限公司 一种光伏汇流焊带无氰碱性镀铜液及其制备方法
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
US12134834B2 (en) 2020-04-03 2024-11-05 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
KR20230037553A (ko) 2020-07-13 2023-03-16 바스프 에스이 코발트 시드 상의 구리 전기도금을 위한 조성물
IL311715A (en) 2021-10-01 2024-05-01 Basf Se The composition for electrical deposition of copper containing a polyaminoamide compensator
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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US4505839A (en) 1981-05-18 1985-03-19 Petrolite Corporation Polyalkanolamines
US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US5051154A (en) 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
RU2103420C1 (ru) * 1995-06-06 1998-01-27 Калининградский государственный университет Электролит блестящего меднения
DE19625991A1 (de) 1996-06-28 1998-01-02 Philips Patentverwaltung Bildschirm mit haftungsvermittelnder Silikatschicht
US6444110B2 (en) 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
JP3610434B2 (ja) * 2002-02-06 2005-01-12 第一工業製薬株式会社 非イオン界面活性剤
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TWI400365B (zh) * 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
US20060213780A1 (en) * 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method
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CU23716A1 (es) * 2008-09-30 2011-10-05 Ct Ingenieria Genetica Biotech Péptido antagonista de la actividad de la interleucina-15

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