MY158203A - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents

Composition for metal plating comprising suppressing agent for void free submicron feature filling

Info

Publication number
MY158203A
MY158203A MYPI2011004272A MYPI2011004272A MY158203A MY 158203 A MY158203 A MY 158203A MY PI2011004272 A MYPI2011004272 A MY PI2011004272A MY PI2011004272 A MYPI2011004272 A MY PI2011004272A MY 158203 A MY158203 A MY 158203A
Authority
MY
Malaysia
Prior art keywords
composition
suppressing agent
metal plating
radicals
void free
Prior art date
Application number
MYPI2011004272A
Other languages
English (en)
Inventor
Cornelia Roger-Gopfert
Roman Benedikt Raether
Charlotte Emnet
Alexandra Haag
Dieter Mayer
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of MY158203A publication Critical patent/MY158203A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
MYPI2011004272A 2009-04-07 2010-03-25 Composition for metal plating comprising suppressing agent for void free submicron feature filling MY158203A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09005106 2009-04-07
US25633309P 2009-10-30 2009-10-30

Publications (1)

Publication Number Publication Date
MY158203A true MY158203A (en) 2016-09-15

Family

ID=42935665

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2011004272A MY158203A (en) 2009-04-07 2010-03-25 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Country Status (11)

Country Link
US (2) US20120024711A1 (enExample)
EP (1) EP2417283B1 (enExample)
JP (1) JP5702359B2 (enExample)
KR (1) KR101720365B1 (enExample)
CN (1) CN102365396B (enExample)
IL (1) IL215018B (enExample)
MY (1) MY158203A (enExample)
RU (1) RU2529607C2 (enExample)
SG (1) SG174264A1 (enExample)
TW (1) TWI489011B (enExample)
WO (1) WO2010115717A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
SG177685A1 (en) 2009-07-30 2012-02-28 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
TWI500823B (zh) 2010-03-18 2015-09-21 Basf Se 包含整平劑之金屬電鍍用組合物
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
WO2012085811A1 (en) 2010-12-21 2012-06-28 Basf Se Composition for metal electroplating comprising leveling agent
JP6062425B2 (ja) 2011-06-01 2017-01-18 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ シリコン貫通ビアおよび相互接続フィーチャーのボトムアップ充填のための添加剤を含む金属電気めっきのための組成物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US9243339B2 (en) * 2012-05-25 2016-01-26 Trevor Pearson Additives for producing copper electrodeposits having low oxygen content
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
WO2016172851A1 (en) * 2015-04-28 2016-11-03 Rohm And Haas Electronic Materials Llc Reaction products of bisanhydrids and diamines as additives for electroplating baths
EP3141633B1 (en) * 2015-09-10 2018-05-02 ATOTECH Deutschland GmbH Copper plating bath composition
EP3485069B1 (en) * 2016-07-18 2021-04-28 Basf Se Composition for cobalt plating comprising additive for void-free submicron feature filling
CN109952390A (zh) * 2016-09-22 2019-06-28 麦克德米德乐思公司 在微电子件中的铜的电沉积
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
KR102457310B1 (ko) * 2016-12-20 2022-10-20 바스프 에스이 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
WO2019121092A1 (en) * 2017-12-20 2019-06-27 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
US11242606B2 (en) * 2018-04-20 2022-02-08 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
CN110284162B (zh) * 2019-07-22 2020-06-30 广州三孚新材料科技股份有限公司 一种光伏汇流焊带无氰碱性镀铜液及其制备方法
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
US12134834B2 (en) 2020-04-03 2024-11-05 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
KR20230037553A (ko) 2020-07-13 2023-03-16 바스프 에스이 코발트 시드 상의 구리 전기도금을 위한 조성물
IL311715A (en) 2021-10-01 2024-05-01 Basf Se The composition for electrical deposition of copper containing a polyaminoamide compensator
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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US4505839A (en) 1981-05-18 1985-03-19 Petrolite Corporation Polyalkanolamines
US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US5051154A (en) 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
RU2103420C1 (ru) * 1995-06-06 1998-01-27 Калининградский государственный университет Электролит блестящего меднения
DE19625991A1 (de) 1996-06-28 1998-01-02 Philips Patentverwaltung Bildschirm mit haftungsvermittelnder Silikatschicht
US6444110B2 (en) 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
JP3610434B2 (ja) * 2002-02-06 2005-01-12 第一工業製薬株式会社 非イオン界面活性剤
JP2003328179A (ja) * 2002-05-10 2003-11-19 Ebara Udylite Kk 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法
RU2237755C2 (ru) * 2002-07-25 2004-10-10 Калининградский государственный университет Электролит меднения стальных деталей
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JP3804788B2 (ja) * 2002-11-18 2006-08-02 荏原ユージライト株式会社 クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴
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TWI400365B (zh) * 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
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RU2334831C2 (ru) * 2006-10-31 2008-09-27 Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" Электролит меднения
CU23716A1 (es) * 2008-09-30 2011-10-05 Ct Ingenieria Genetica Biotech Péptido antagonista de la actividad de la interleucina-15

Also Published As

Publication number Publication date
WO2010115717A1 (en) 2010-10-14
CN102365396A (zh) 2012-02-29
US20210317582A1 (en) 2021-10-14
JP5702359B2 (ja) 2015-04-15
RU2529607C2 (ru) 2014-09-27
RU2011144620A (ru) 2013-05-20
CN102365396B (zh) 2014-12-31
KR20120089564A (ko) 2012-08-13
JP2012522897A (ja) 2012-09-27
TWI489011B (zh) 2015-06-21
KR101720365B1 (ko) 2017-03-27
EP2417283B1 (en) 2014-07-30
TW201042095A (en) 2010-12-01
IL215018A0 (en) 2011-12-01
SG174264A1 (en) 2011-10-28
EP2417283A1 (en) 2012-02-15
IL215018B (en) 2018-02-28
US20120024711A1 (en) 2012-02-02

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