WO2008111389A1 - エッチング液及びエッチング方法 - Google Patents

エッチング液及びエッチング方法 Download PDF

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Publication number
WO2008111389A1
WO2008111389A1 PCT/JP2008/053267 JP2008053267W WO2008111389A1 WO 2008111389 A1 WO2008111389 A1 WO 2008111389A1 JP 2008053267 W JP2008053267 W JP 2008053267W WO 2008111389 A1 WO2008111389 A1 WO 2008111389A1
Authority
WO
WIPO (PCT)
Prior art keywords
etching
etching solution
palladium
gold
carbon atoms
Prior art date
Application number
PCT/JP2008/053267
Other languages
English (en)
French (fr)
Inventor
Makoto Ishikawa
Noriyuki Saitou
Masumi Aoki
Original Assignee
Mitsubishi Chemical Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corporation filed Critical Mitsubishi Chemical Corporation
Priority to JP2009503954A priority Critical patent/JP5304637B2/ja
Publication of WO2008111389A1 publication Critical patent/WO2008111389A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

　疎水性のベアシリコンに対する濡れ性に優れ、狭間隙における金又はパラジウムをも効率的にエッチングすることができるエッチング液を提供する。金又はパラジウムを処理するエッチング液において、ヨウ素、ヨウ化物塩、水及びグリコールエーテル系化合物を含む水溶性エッチング液。このグリコールエーテル系化合物としては、下記一般式（１）で表されるものが好ましい。 　Ｒ１－Ｏ－（Ｒ２－Ｏ－）ｎ－Ｈ　　…（１） 　（１）式中、Ｒ１は炭素数４～２０のアルキル基を表し、Ｒ２は炭素数２～４のアルキレン基を表し、ｎは２～４０の整数を表す。
PCT/JP2008/053267 2007-03-12 2008-02-26 エッチング液及びエッチング方法 WO2008111389A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009503954A JP5304637B2 (ja) 2007-03-12 2008-02-26 エッチング液及びエッチング方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-062066 2007-03-12
JP2007062066 2007-03-12
JP2007242532 2007-09-19
JP2007-242532 2007-09-19

Publications (1)

Publication Number Publication Date
WO2008111389A1 true WO2008111389A1 (ja) 2008-09-18

Family

ID=39759331

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053267 WO2008111389A1 (ja) 2007-03-12 2008-02-26 エッチング液及びエッチング方法

Country Status (3)

Country Link
JP (1) JP5304637B2 (ja)
TW (1) TW200848550A (ja)
WO (1) WO2008111389A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011032557A (ja) * 2009-08-04 2011-02-17 Dainippon Printing Co Ltd ステンレス基板への金めっきパターンの形成方法
JP2013021065A (ja) * 2011-07-08 2013-01-31 Fujifilm Corp 半導体基板製品の製造方法、これに用いられる薄膜除去液
JP2014082480A (ja) * 2012-09-28 2014-05-08 Kanto Chem Co Inc ヨウ素系エッチング液およびエッチング方法
JP2016092189A (ja) * 2014-11-04 2016-05-23 株式会社東芝 処理装置および処理方法
KR101901894B1 (ko) 2017-04-12 2018-09-28 엘지전자 주식회사 화합물 반도체 태양전지 및 이의 전면 전극 제조 방법
CN113594034A (zh) * 2021-08-03 2021-11-02 中山大学南昌研究院 一种改善湿法刻蚀均一性的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112322294B (zh) * 2020-09-27 2022-04-22 威科赛乐微电子股份有限公司 一种vcsel芯片金薄膜蚀刻液及其蚀刻方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002008491A1 (fr) * 2000-07-26 2002-01-31 Mitsubishi Gas Chemical Company, Inc. Solution d'elimination de palladium et procede correspondant
JP2003109949A (ja) * 2001-09-28 2003-04-11 Mitsubishi Chemicals Corp エッチング液及びエッチング方法
JP2003213460A (ja) * 2002-01-16 2003-07-30 The Inctec Inc 銀系薄膜用エッチング液

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002008491A1 (fr) * 2000-07-26 2002-01-31 Mitsubishi Gas Chemical Company, Inc. Solution d'elimination de palladium et procede correspondant
JP2003109949A (ja) * 2001-09-28 2003-04-11 Mitsubishi Chemicals Corp エッチング液及びエッチング方法
JP2003213460A (ja) * 2002-01-16 2003-07-30 The Inctec Inc 銀系薄膜用エッチング液

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011032557A (ja) * 2009-08-04 2011-02-17 Dainippon Printing Co Ltd ステンレス基板への金めっきパターンの形成方法
JP2013021065A (ja) * 2011-07-08 2013-01-31 Fujifilm Corp 半導体基板製品の製造方法、これに用いられる薄膜除去液
JP2014082480A (ja) * 2012-09-28 2014-05-08 Kanto Chem Co Inc ヨウ素系エッチング液およびエッチング方法
JP2016092189A (ja) * 2014-11-04 2016-05-23 株式会社東芝 処理装置および処理方法
KR101901894B1 (ko) 2017-04-12 2018-09-28 엘지전자 주식회사 화합물 반도체 태양전지 및 이의 전면 전극 제조 방법
CN113594034A (zh) * 2021-08-03 2021-11-02 中山大学南昌研究院 一种改善湿法刻蚀均一性的方法

Also Published As

Publication number Publication date
JPWO2008111389A1 (ja) 2010-06-24
TW200848550A (en) 2008-12-16
JP5304637B2 (ja) 2013-10-02

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