TWI489011B - 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物 - Google Patents

包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物 Download PDF

Info

Publication number
TWI489011B
TWI489011B TW099110627A TW99110627A TWI489011B TW I489011 B TWI489011 B TW I489011B TW 099110627 A TW099110627 A TW 099110627A TW 99110627 A TW99110627 A TW 99110627A TW I489011 B TWI489011 B TW I489011B
Authority
TW
Taiwan
Prior art keywords
copper
group
composition
groups
independently selected
Prior art date
Application number
TW099110627A
Other languages
English (en)
Chinese (zh)
Other versions
TW201042095A (en
Inventor
Cornelia Roeger
Roman Benedikt Raether
Charlotte Emnet
Alexandra Haag
Dieter Mayer
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of TW201042095A publication Critical patent/TW201042095A/zh
Application granted granted Critical
Publication of TWI489011B publication Critical patent/TWI489011B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/58Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/423Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
TW099110627A 2009-04-07 2010-04-06 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物 TWI489011B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09005106 2009-04-07
US25633309P 2009-10-30 2009-10-30

Publications (2)

Publication Number Publication Date
TW201042095A TW201042095A (en) 2010-12-01
TWI489011B true TWI489011B (zh) 2015-06-21

Family

ID=42935665

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099110627A TWI489011B (zh) 2009-04-07 2010-04-06 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物

Country Status (11)

Country Link
US (2) US20120024711A1 (enExample)
EP (1) EP2417283B1 (enExample)
JP (1) JP5702359B2 (enExample)
KR (1) KR101720365B1 (enExample)
CN (1) CN102365396B (enExample)
IL (1) IL215018B (enExample)
MY (1) MY158203A (enExample)
RU (1) RU2529607C2 (enExample)
SG (1) SG174264A1 (enExample)
TW (1) TWI489011B (enExample)
WO (1) WO2010115717A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200632147A (enExample) 2004-11-12 2006-09-16
CN102597329B (zh) 2009-07-30 2015-12-16 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物
TWI500823B (zh) 2010-03-18 2015-09-21 Basf Se 包含整平劑之金屬電鍍用組合物
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
MY170653A (en) 2010-12-21 2019-08-23 Basf Se Composition for metal electroplating comprising leveling agent
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
SG194983A1 (en) 2011-06-01 2013-12-30 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
US9243339B2 (en) * 2012-05-25 2016-01-26 Trevor Pearson Additives for producing copper electrodeposits having low oxygen content
MY172822A (en) 2012-11-09 2019-12-12 Basf Se Composition for metal electroplating comprising leveling agent
JP2018517793A (ja) * 2015-04-28 2018-07-05 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 電気めっき浴用の添加剤としてのビス無水物及びジアミンの反応生成物
ES2681836T3 (es) * 2015-09-10 2018-09-17 Atotech Deutschland Gmbh Composición de baño para chapado de cobre
WO2018015168A1 (en) * 2016-07-18 2018-01-25 Basf Se Composition for cobalt plating comprising additive for void-free submicron feature filling
WO2018057707A1 (en) 2016-09-22 2018-03-29 Macdermid Enthone Inc. Copper electrodeposition in microelectronics
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US11926918B2 (en) 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
EP3679179B1 (en) 2017-09-04 2023-10-11 Basf Se Composition for metal electroplating comprising leveling agent
EP3728702B1 (en) * 2017-12-20 2021-09-22 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
KR102769982B1 (ko) * 2018-04-20 2025-02-18 바스프 에스이 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물
CN110284162B (zh) * 2019-07-22 2020-06-30 广州三孚新材料科技股份有限公司 一种光伏汇流焊带无氰碱性镀铜液及其制备方法
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
US20220333262A1 (en) 2019-09-27 2022-10-20 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021197950A1 (en) 2020-04-03 2021-10-07 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
JP7781850B2 (ja) 2020-07-13 2025-12-08 ビーエーエスエフ ソシエタス・ヨーロピア コバルトシード上の銅電気メッキ用組成物
WO2023052254A1 (en) 2021-10-01 2023-04-06 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
KR20250036166A (ko) 2022-07-07 2025-03-13 바스프 에스이 구리 나노트윈 전착을 위한 폴리아미노아미드 유형 화합물을 포함하는 조성물의 용도
KR20250124348A (ko) 2022-12-19 2025-08-19 바스프 에스이 구리 나노트윈 전착용 조성물
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200632147A (enExample) * 2004-11-12 2006-09-16

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505839A (en) 1981-05-18 1985-03-19 Petrolite Corporation Polyalkanolamines
US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US5051154A (en) 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
RU2103420C1 (ru) * 1995-06-06 1998-01-27 Калининградский государственный университет Электролит блестящего меднения
DE19625991A1 (de) 1996-06-28 1998-01-02 Philips Patentverwaltung Bildschirm mit haftungsvermittelnder Silikatschicht
US6444110B2 (en) 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
JP3610434B2 (ja) * 2002-02-06 2005-01-12 第一工業製薬株式会社 非イオン界面活性剤
JP2003328179A (ja) * 2002-05-10 2003-11-19 Ebara Udylite Kk 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法
RU2237755C2 (ru) * 2002-07-25 2004-10-10 Калининградский государственный университет Электролит меднения стальных деталей
US6833479B2 (en) 2002-08-16 2004-12-21 Cognis Corporation Antimisting agents
JP3804788B2 (ja) * 2002-11-18 2006-08-02 荏原ユージライト株式会社 クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴
US20050072683A1 (en) 2003-04-03 2005-04-07 Ebara Corporation Copper plating bath and plating method
US20050045485A1 (en) 2003-09-03 2005-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Method to improve copper electrochemical deposition
US20060213780A1 (en) * 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method
RU2334831C2 (ru) * 2006-10-31 2008-09-27 Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" Электролит меднения
CU23716A1 (es) * 2008-09-30 2011-10-05 Ct Ingenieria Genetica Biotech Péptido antagonista de la actividad de la interleucina-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200632147A (enExample) * 2004-11-12 2006-09-16

Also Published As

Publication number Publication date
US20120024711A1 (en) 2012-02-02
CN102365396A (zh) 2012-02-29
WO2010115717A1 (en) 2010-10-14
RU2011144620A (ru) 2013-05-20
EP2417283A1 (en) 2012-02-15
IL215018B (en) 2018-02-28
RU2529607C2 (ru) 2014-09-27
KR20120089564A (ko) 2012-08-13
KR101720365B1 (ko) 2017-03-27
IL215018A0 (en) 2011-12-01
MY158203A (en) 2016-09-15
SG174264A1 (en) 2011-10-28
TW201042095A (en) 2010-12-01
EP2417283B1 (en) 2014-07-30
JP5702359B2 (ja) 2015-04-15
JP2012522897A (ja) 2012-09-27
US20210317582A1 (en) 2021-10-14
CN102365396B (zh) 2014-12-31

Similar Documents

Publication Publication Date Title
TWI489011B (zh) 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物
TWI489012B (zh) 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物
TWI487814B (zh) 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物
US11486049B2 (en) Composition for metal electroplating comprising leveling agent
KR101738701B1 (ko) 평활제를 포함하는, 금속 전기 도금용 조성물
KR101752018B1 (ko) 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물
TWI500823B (zh) 包含整平劑之金屬電鍍用組合物
JP2012522897A5 (enExample)
WO2010115757A1 (en) Composition for metal plating comprising suppressing agent for void free submicron feature filling
TW201823520A (zh) 包含用於無空隙次微米特徵填充的抑制劑之金屬電鍍用組成物