JP2012522900A5 - - Google Patents

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Publication number
JP2012522900A5
JP2012522900A5 JP2012503976A JP2012503976A JP2012522900A5 JP 2012522900 A5 JP2012522900 A5 JP 2012522900A5 JP 2012503976 A JP2012503976 A JP 2012503976A JP 2012503976 A JP2012503976 A JP 2012503976A JP 2012522900 A5 JP2012522900 A5 JP 2012522900A5
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JP
Japan
Prior art keywords
copper
metal
alkylene
substrate
composition according
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JP2012503976A
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English (en)
Japanese (ja)
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JP5722872B2 (ja
JP2012522900A (ja
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Priority claimed from PCT/EP2010/054281 external-priority patent/WO2010115796A1/en
Publication of JP2012522900A publication Critical patent/JP2012522900A/ja
Publication of JP2012522900A5 publication Critical patent/JP2012522900A5/ja
Application granted granted Critical
Publication of JP5722872B2 publication Critical patent/JP5722872B2/ja
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JP2012503976A 2009-04-07 2010-03-31 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 Active JP5722872B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09157540 2009-04-07
EP09157540.7 2009-04-07
US25632809P 2009-10-30 2009-10-30
US61/256,328 2009-10-30
PCT/EP2010/054281 WO2010115796A1 (en) 2009-04-07 2010-03-31 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (3)

Publication Number Publication Date
JP2012522900A JP2012522900A (ja) 2012-09-27
JP2012522900A5 true JP2012522900A5 (enExample) 2014-09-11
JP5722872B2 JP5722872B2 (ja) 2015-05-27

Family

ID=42935669

Family Applications (1)

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JP2012503976A Active JP5722872B2 (ja) 2009-04-07 2010-03-31 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物

Country Status (11)

Country Link
US (2) US20120018310A1 (enExample)
EP (1) EP2417285B1 (enExample)
JP (1) JP5722872B2 (enExample)
KR (1) KR101759352B1 (enExample)
CN (1) CN102365395B (enExample)
IL (1) IL215157A (enExample)
MY (1) MY156728A (enExample)
RU (1) RU2542219C2 (enExample)
SG (1) SG174393A1 (enExample)
TW (1) TWI487814B (enExample)
WO (1) WO2010115796A1 (enExample)

Families Citing this family (24)

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Publication number Priority date Publication date Assignee Title
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
KR20170034948A (ko) * 2009-04-07 2017-03-29 바스프 에스이 무공극 서브미크론 특징부 충전을 위한 억제제를 포함하는 금속 도금용 조성물
SG177685A1 (en) 2009-07-30 2012-02-28 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
TWI500823B (zh) 2010-03-18 2015-09-21 Basf Se 包含整平劑之金屬電鍍用組合物
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
WO2012085811A1 (en) 2010-12-21 2012-06-28 Basf Se Composition for metal electroplating comprising leveling agent
JP6062425B2 (ja) 2011-06-01 2017-01-18 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se シリコン貫通ビアおよび相互接続フィーチャーのボトムアップ充填のための添加剤を含む金属電気めっきのための組成物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
CN113215626A (zh) 2015-06-30 2021-08-06 麦德美乐思公司 微电子电路中的互连部的钴填充
CN109952390A (zh) * 2016-09-22 2019-06-28 麦克德米德乐思公司 在微电子件中的铜的电沉积
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
KR102457310B1 (ko) * 2016-12-20 2022-10-20 바스프 에스이 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
US11035048B2 (en) * 2017-07-05 2021-06-15 Macdermid Enthone Inc. Cobalt filling of interconnects
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
ES2847957T3 (es) * 2018-06-11 2021-08-04 Atotech Deutschland Gmbh Un baño ácido de galvanoplastia de zinc o aleación de zinc-níquel para el depósito de una capa de zinc o aleación de zinc-níquel
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
US12134834B2 (en) 2020-04-03 2024-11-05 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
IL311715A (en) 2021-10-01 2024-05-01 Basf Se The composition for electrical deposition of copper containing a polyaminoamide compensator
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
KR20250136853A (ko) * 2023-01-18 2025-09-16 맥더미드 엔쏜 인코포레이티드 전도성 기판 상의 얇은 구리 필름의 전착

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US4347108A (en) * 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
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DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
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