JP5722872B2 - サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 - Google Patents

サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 Download PDF

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Publication number
JP5722872B2
JP5722872B2 JP2012503976A JP2012503976A JP5722872B2 JP 5722872 B2 JP5722872 B2 JP 5722872B2 JP 2012503976 A JP2012503976 A JP 2012503976A JP 2012503976 A JP2012503976 A JP 2012503976A JP 5722872 B2 JP5722872 B2 JP 5722872B2
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Japan
Prior art keywords
copper
metal
alkylene
substrate
composition according
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JP2012503976A
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Japanese (ja)
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JP2012522900A5 (enExample
JP2012522900A (ja
Inventor
レーガー−ゲプフェルト，コルネリア
ベネディクト レター，ロマーン
ベネディクト レター，ロマーン
エムネット，シャルロッテ
ハーク，アレクサンドラ
マイァ，ディーター
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BASF SE
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BASF SE
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Publication of JP2012522900A5 publication Critical patent/JP2012522900A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrochemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
JP2012503976A 2009-04-07 2010-03-31 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 Active JP5722872B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09157540 2009-04-07
EP09157540.7 2009-04-07
US25632809P 2009-10-30 2009-10-30
US61/256,328 2009-10-30
PCT/EP2010/054281 WO2010115796A1 (en) 2009-04-07 2010-03-31 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (3)

Publication Number Publication Date
JP2012522900A JP2012522900A (ja) 2012-09-27
JP2012522900A5 JP2012522900A5 (enExample) 2014-09-11
JP5722872B2 true JP5722872B2 (ja) 2015-05-27

Family

ID=42935669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012503976A Active JP5722872B2 (ja) 2009-04-07 2010-03-31 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物

Country Status (11)

Country Link
US (2) US20120018310A1 (enExample)
EP (1) EP2417285B1 (enExample)
JP (1) JP5722872B2 (enExample)
KR (1) KR101759352B1 (enExample)
CN (1) CN102365395B (enExample)
IL (1) IL215157A (enExample)
MY (1) MY156728A (enExample)
RU (1) RU2542219C2 (enExample)
SG (1) SG174393A1 (enExample)
TW (1) TWI487814B (enExample)
WO (1) WO2010115796A1 (enExample)

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TW200632147A (enExample) 2004-11-12 2006-09-16
KR20170034948A (ko) * 2009-04-07 2017-03-29 바스프 에스이 무공극 서브미크론 특징부 충전을 위한 억제제를 포함하는 금속 도금용 조성물
KR101752018B1 (ko) 2009-07-30 2017-06-28 바스프 에스이 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물
MY156690A (en) 2010-03-18 2016-03-15 Basf Se Composition for metal electroplating comprising leveling agent
RU2013133648A (ru) 2010-12-21 2015-01-27 Басф Се Композиция для электролитического осаждения металлов, содержащая выравнивающий агент
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
WO2012164509A1 (en) 2011-06-01 2012-12-06 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
EP2917265B1 (en) 2012-11-09 2019-01-02 Basf Se Composition for metal electroplating comprising leveling agent
CN107849722A (zh) 2015-06-30 2018-03-27 麦德美乐思公司 微电子电路中的互连部的钴填充
CN117385426A (zh) * 2016-09-22 2024-01-12 麦克德米德乐思公司 在微电子件中的铜的电沉积
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
EP3559317B1 (en) * 2016-12-20 2025-02-12 Basf Se Composition for metal plating comprising suppressing agent for void free filling
US11035048B2 (en) * 2017-07-05 2021-06-15 Macdermid Enthone Inc. Cobalt filling of interconnects
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
ES2847957T3 (es) * 2018-06-11 2021-08-04 Atotech Deutschland Gmbh Un baño ácido de galvanoplastia de zinc o aleación de zinc-níquel para el depósito de una capa de zinc o aleación de zinc-níquel
CN114514339A (zh) 2019-09-27 2022-05-17 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
EP4127025B1 (en) 2020-04-03 2025-10-01 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US20250129503A1 (en) 2021-10-01 2025-04-24 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2024155592A1 (en) * 2023-01-18 2024-07-25 Macdermid Enthone Inc. Electrodeposition of thin copper films on conductive substrates

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Also Published As

Publication number Publication date
US20120018310A1 (en) 2012-01-26
WO2010115796A1 (en) 2010-10-14
CN102365395B (zh) 2015-04-29
EP2417285A1 (en) 2012-02-15
EP2417285B1 (en) 2014-07-16
KR101759352B1 (ko) 2017-07-18
CN102365395A (zh) 2012-02-29
IL215157A (en) 2015-06-30
KR20110138401A (ko) 2011-12-27
RU2542219C2 (ru) 2015-02-20
IL215157A0 (en) 2011-12-29
TWI487814B (zh) 2015-06-11
US20200173029A1 (en) 2020-06-04
TW201040322A (en) 2010-11-16
MY156728A (en) 2016-03-15
JP2012522900A (ja) 2012-09-27
RU2011144619A (ru) 2013-05-20
SG174393A1 (en) 2011-11-28

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