KR101759352B1 - 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 - Google Patents

무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 Download PDF

Info

Publication number
KR101759352B1
KR101759352B1 KR1020117026497A KR20117026497A KR101759352B1 KR 101759352 B1 KR101759352 B1 KR 101759352B1 KR 1020117026497 A KR1020117026497 A KR 1020117026497A KR 20117026497 A KR20117026497 A KR 20117026497A KR 101759352 B1 KR101759352 B1 KR 101759352B1
Authority
KR
South Korea
Prior art keywords
copper
inhibitor
substrate
composition
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020117026497A
Other languages
English (en)
Korean (ko)
Other versions
KR20110138401A (ko
Inventor
코넬리아 뢰거-괴퍼트
로만 베네딕트 라에터
샤를롯 엠넷
알렉산드라 하그
디터 마이어
Original Assignee
바스프 에스이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 바스프 에스이 filed Critical 바스프 에스이
Publication of KR20110138401A publication Critical patent/KR20110138401A/ko
Application granted granted Critical
Publication of KR101759352B1 publication Critical patent/KR101759352B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
KR1020117026497A 2009-04-07 2010-03-31 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 Active KR101759352B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09157540 2009-04-07
EP09157540.7 2009-04-07
US25632809P 2009-10-30 2009-10-30
US61/256,328 2009-10-30
PCT/EP2010/054281 WO2010115796A1 (en) 2009-04-07 2010-03-31 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
KR20110138401A KR20110138401A (ko) 2011-12-27
KR101759352B1 true KR101759352B1 (ko) 2017-07-18

Family

ID=42935669

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117026497A Active KR101759352B1 (ko) 2009-04-07 2010-03-31 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물

Country Status (11)

Country Link
US (2) US20120018310A1 (enExample)
EP (1) EP2417285B1 (enExample)
JP (1) JP5722872B2 (enExample)
KR (1) KR101759352B1 (enExample)
CN (1) CN102365395B (enExample)
IL (1) IL215157A (enExample)
MY (1) MY156728A (enExample)
RU (1) RU2542219C2 (enExample)
SG (1) SG174393A1 (enExample)
TW (1) TWI487814B (enExample)
WO (1) WO2010115796A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
WO2010115756A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2011012462A2 (en) 2009-07-30 2011-02-03 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
EP2547731B1 (en) 2010-03-18 2014-07-30 Basf Se Composition for metal electroplating comprising leveling agent
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
EP2655457B1 (en) 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
RU2013158459A (ru) 2011-06-01 2015-07-20 Басф Се Композиция для электроосаждения металла, содержащая добавку для заполнения снизу вверх переходных отверстий в кремнии и межсоединительных элементов
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
JP6411354B2 (ja) 2012-11-09 2018-10-24 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 平坦化剤を含む金属電気めっきのための組成物
KR102448669B1 (ko) 2015-06-30 2022-09-29 맥더미드 엔쏜 인코포레이티드 마이크로일렉트로닉스 내의 상호연결들의 코발트 충진
EP3516096A4 (en) * 2016-09-22 2020-10-21 MacDermid Enthone Inc. MICROELECTRONIC COPPER ELECTRODEPOSITION
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
KR102457310B1 (ko) 2016-12-20 2022-10-20 바스프 에스이 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
US11035048B2 (en) * 2017-07-05 2021-06-15 Macdermid Enthone Inc. Cobalt filling of interconnects
EP3679179B1 (en) 2017-09-04 2023-10-11 Basf Se Composition for metal electroplating comprising leveling agent
ES2847957T3 (es) * 2018-06-11 2021-08-04 Atotech Deutschland Gmbh Un baño ácido de galvanoplastia de zinc o aleación de zinc-níquel para el depósito de una capa de zinc o aleación de zinc-níquel
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
IL296980A (en) 2020-04-03 2022-12-01 Basf Se The composition for electrodeposition of copper bumps containing a polyaminoamide compensator
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
EP4409058B1 (en) 2021-10-01 2025-11-05 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
KR20250124348A (ko) 2022-12-19 2025-08-19 바스프 에스이 구리 나노트윈 전착용 조성물
KR20250136853A (ko) * 2023-01-18 2025-09-16 맥더미드 엔쏜 인코포레이티드 전도성 기판 상의 얇은 구리 필름의 전착

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005535787A (ja) 2002-08-16 2005-11-24 アーケマ・インコーポレイテッド 電解銅めっき液
US20070289875A1 (en) 2004-11-12 2007-12-20 Enthone Inc. Copper electrodeposition in microelectronics
WO2008015168A1 (de) 2006-08-03 2008-02-07 Basf Se Verfahren zum aufbringen einer metallschicht auf einem substrat

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505839A (en) 1981-05-18 1985-03-19 Petrolite Corporation Polyalkanolamines
US4347108A (en) * 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US5051154A (en) 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
DE19622221A1 (de) * 1996-06-03 1997-12-04 Henkel Kgaa Verfahren zur Beschichtung elektrisch leitfähiger Substrate
US6444110B2 (en) 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
JP3610434B2 (ja) * 2002-02-06 2005-01-12 第一工業製薬株式会社 非イオン界面活性剤
JP2003328179A (ja) * 2002-05-10 2003-11-19 Ebara Udylite Kk 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法
RU2237755C2 (ru) * 2002-07-25 2004-10-10 Калининградский государственный университет Электролит меднения стальных деталей
US6833479B2 (en) 2002-08-16 2004-12-21 Cognis Corporation Antimisting agents
JP3804788B2 (ja) * 2002-11-18 2006-08-02 荏原ユージライト株式会社 クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴
US20050072683A1 (en) 2003-04-03 2005-04-07 Ebara Corporation Copper plating bath and plating method
US20050045485A1 (en) 2003-09-03 2005-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Method to improve copper electrochemical deposition
US20060213780A1 (en) * 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method
RU2334831C2 (ru) * 2006-10-31 2008-09-27 Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" Электролит меднения
KR101244299B1 (ko) * 2008-09-23 2013-03-18 에어로바이론먼트 인크 무철심형 영구 자석 기계의 센서리스 토크 제어 방법 및 시스템
US7966410B2 (en) * 2008-09-25 2011-06-21 Microsoft Corporation Coordinating data delivery using time suggestions

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005535787A (ja) 2002-08-16 2005-11-24 アーケマ・インコーポレイテッド 電解銅めっき液
US20070289875A1 (en) 2004-11-12 2007-12-20 Enthone Inc. Copper electrodeposition in microelectronics
WO2008015168A1 (de) 2006-08-03 2008-02-07 Basf Se Verfahren zum aufbringen einer metallschicht auf einem substrat

Also Published As

Publication number Publication date
SG174393A1 (en) 2011-11-28
KR20110138401A (ko) 2011-12-27
EP2417285B1 (en) 2014-07-16
RU2011144619A (ru) 2013-05-20
US20200173029A1 (en) 2020-06-04
JP2012522900A (ja) 2012-09-27
US20120018310A1 (en) 2012-01-26
CN102365395B (zh) 2015-04-29
RU2542219C2 (ru) 2015-02-20
IL215157A (en) 2015-06-30
JP5722872B2 (ja) 2015-05-27
MY156728A (en) 2016-03-15
TWI487814B (zh) 2015-06-11
WO2010115796A1 (en) 2010-10-14
IL215157A0 (en) 2011-12-29
CN102365395A (zh) 2012-02-29
EP2417285A1 (en) 2012-02-15
TW201040322A (en) 2010-11-16

Similar Documents

Publication Publication Date Title
US20210317582A1 (en) Composition for metal plating comprising suppressing agent for void free submicron feature filling
EP2417284B1 (en) Composition for metal plating comprising suppressing agent for void free submicron feature filling
US20200173029A1 (en) Composition for metal plating comprising suppressing agent for void free submicron feature filling
KR101752018B1 (ko) 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물
KR101738701B1 (ko) 평활제를 포함하는, 금속 전기 도금용 조성물
WO2010115757A1 (en) Composition for metal plating comprising suppressing agent for void free submicron feature filling
JP2012522900A5 (enExample)
JP2012522897A5 (enExample)

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T13-X000 Administrative time limit extension granted

St.27 status event code: U-3-3-T10-T13-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000