KR101759352B1 - 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 - Google Patents

무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 Download PDF

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KR101759352B1
KR101759352B1 KR1020117026497A KR20117026497A KR101759352B1 KR 101759352 B1 KR101759352 B1 KR 101759352B1 KR 1020117026497 A KR1020117026497 A KR 1020117026497A KR 20117026497 A KR20117026497 A KR 20117026497A KR 101759352 B1 KR101759352 B1 KR 101759352B1
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copper
inhibitor
substrate
composition
metal
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KR20110138401A (ko
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코넬리아 뢰거-괴퍼트
로만 베네딕트 라에터
샤를롯 엠넷
알렉산드라 하그
디터 마이어
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
KR1020117026497A 2009-04-07 2010-03-31 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 Active KR101759352B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09157540.7 2009-04-07
EP09157540 2009-04-07
US25632809P 2009-10-30 2009-10-30
US61/256,328 2009-10-30
PCT/EP2010/054281 WO2010115796A1 (en) 2009-04-07 2010-03-31 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
KR20110138401A KR20110138401A (ko) 2011-12-27
KR101759352B1 true KR101759352B1 (ko) 2017-07-18

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KR1020117026497A Active KR101759352B1 (ko) 2009-04-07 2010-03-31 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물

Country Status (11)

Country Link
US (2) US20120018310A1 (enExample)
EP (1) EP2417285B1 (enExample)
JP (1) JP5722872B2 (enExample)
KR (1) KR101759352B1 (enExample)
CN (1) CN102365395B (enExample)
IL (1) IL215157A (enExample)
MY (1) MY156728A (enExample)
RU (1) RU2542219C2 (enExample)
SG (1) SG174393A1 (enExample)
TW (1) TWI487814B (enExample)
WO (1) WO2010115796A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200632147A (enExample) 2004-11-12 2006-09-16
SG10201401324YA (en) * 2009-04-07 2014-08-28 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN102597329B (zh) 2009-07-30 2015-12-16 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物
TWI500823B (zh) 2010-03-18 2015-09-21 Basf Se 包含整平劑之金屬電鍍用組合物
MY170653A (en) 2010-12-21 2019-08-23 Basf Se Composition for metal electroplating comprising leveling agent
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
SG194983A1 (en) 2011-06-01 2013-12-30 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
MY172822A (en) 2012-11-09 2019-12-12 Basf Se Composition for metal electroplating comprising leveling agent
TWI758252B (zh) 2015-06-30 2022-03-21 美商麥克達米德恩索龍股份有限公司 微電子中之互連的鈷填充
WO2018057707A1 (en) 2016-09-22 2018-03-29 Macdermid Enthone Inc. Copper electrodeposition in microelectronics
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US11926918B2 (en) 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
US11035048B2 (en) 2017-07-05 2021-06-15 Macdermid Enthone Inc. Cobalt filling of interconnects
EP3679179B1 (en) 2017-09-04 2023-10-11 Basf Se Composition for metal electroplating comprising leveling agent
EP3581684B1 (en) * 2018-06-11 2020-11-18 ATOTECH Deutschland GmbH An acidic zinc or zinc-nickel alloy electroplating bath for depositing a zinc or zinc-nickel alloy layer
US20220333262A1 (en) 2019-09-27 2022-10-20 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
WO2021197950A1 (en) 2020-04-03 2021-10-07 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
WO2023052254A1 (en) 2021-10-01 2023-04-06 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
KR20250036166A (ko) 2022-07-07 2025-03-13 바스프 에스이 구리 나노트윈 전착을 위한 폴리아미노아미드 유형 화합물을 포함하는 조성물의 용도
KR20250124348A (ko) 2022-12-19 2025-08-19 바스프 에스이 구리 나노트윈 전착용 조성물
KR20250136853A (ko) * 2023-01-18 2025-09-16 맥더미드 엔쏜 인코포레이티드 전도성 기판 상의 얇은 구리 필름의 전착

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005535787A (ja) 2002-08-16 2005-11-24 アーケマ・インコーポレイテッド 電解銅めっき液
US20070289875A1 (en) 2004-11-12 2007-12-20 Enthone Inc. Copper electrodeposition in microelectronics
WO2008015168A1 (de) 2006-08-03 2008-02-07 Basf Se Verfahren zum aufbringen einer metallschicht auf einem substrat

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505839A (en) 1981-05-18 1985-03-19 Petrolite Corporation Polyalkanolamines
US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US5051154A (en) 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
DE19622221A1 (de) * 1996-06-03 1997-12-04 Henkel Kgaa Verfahren zur Beschichtung elektrisch leitfähiger Substrate
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
JP3610434B2 (ja) * 2002-02-06 2005-01-12 第一工業製薬株式会社 非イオン界面活性剤
JP2003328179A (ja) * 2002-05-10 2003-11-19 Ebara Udylite Kk 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法
RU2237755C2 (ru) * 2002-07-25 2004-10-10 Калининградский государственный университет Электролит меднения стальных деталей
US6833479B2 (en) 2002-08-16 2004-12-21 Cognis Corporation Antimisting agents
JP3804788B2 (ja) * 2002-11-18 2006-08-02 荏原ユージライト株式会社 クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴
US20050072683A1 (en) 2003-04-03 2005-04-07 Ebara Corporation Copper plating bath and plating method
US20050045485A1 (en) 2003-09-03 2005-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Method to improve copper electrochemical deposition
US20060213780A1 (en) * 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method
RU2334831C2 (ru) * 2006-10-31 2008-09-27 Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" Электролит меднения
CA2740404C (en) * 2008-09-23 2014-07-22 Aerovironment, Inc. Sensorless optimum torque control for high efficiency ironless permanent magnet machine
US7966410B2 (en) * 2008-09-25 2011-06-21 Microsoft Corporation Coordinating data delivery using time suggestions

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005535787A (ja) 2002-08-16 2005-11-24 アーケマ・インコーポレイテッド 電解銅めっき液
US20070289875A1 (en) 2004-11-12 2007-12-20 Enthone Inc. Copper electrodeposition in microelectronics
WO2008015168A1 (de) 2006-08-03 2008-02-07 Basf Se Verfahren zum aufbringen einer metallschicht auf einem substrat

Also Published As

Publication number Publication date
CN102365395B (zh) 2015-04-29
WO2010115796A1 (en) 2010-10-14
MY156728A (en) 2016-03-15
TW201040322A (en) 2010-11-16
JP5722872B2 (ja) 2015-05-27
US20200173029A1 (en) 2020-06-04
IL215157A (en) 2015-06-30
CN102365395A (zh) 2012-02-29
RU2011144619A (ru) 2013-05-20
SG174393A1 (en) 2011-11-28
TWI487814B (zh) 2015-06-11
US20120018310A1 (en) 2012-01-26
IL215157A0 (en) 2011-12-29
EP2417285A1 (en) 2012-02-15
EP2417285B1 (en) 2014-07-16
KR20110138401A (ko) 2011-12-27
JP2012522900A (ja) 2012-09-27
RU2542219C2 (ru) 2015-02-20

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