JP2020109842A - 半導体スタック層、半導体素子及びその製造方法 - Google Patents

半導体スタック層、半導体素子及びその製造方法 Download PDF

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JP2020109842A
JP2020109842A JP2019235697A JP2019235697A JP2020109842A JP 2020109842 A JP2020109842 A JP 2020109842A JP 2019235697 A JP2019235697 A JP 2019235697A JP 2019235697 A JP2019235697 A JP 2019235697A JP 2020109842 A JP2020109842 A JP 2020109842A
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semiconductor layer
semiconductor
impurity
layer
iii
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JP2020109842A5 (enExample
Inventor
チェヌ モン−ヤン
Meng-Yang Chen
チェヌ モン−ヤン
リ ジュン−ジェヌ
Jung-Jen Li
リ ジュン−ジェヌ
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Epistar Corp
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Epistar Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages

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JP2019235697A 2018-12-28 2019-12-26 半導体スタック層、半導体素子及びその製造方法 Pending JP2020109842A (ja)

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TW107147857A TWI803556B (zh) 2018-12-28 2018-12-28 半導體疊層、半導體元件及其製造方法

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US (2) US12057524B2 (enExample)
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Publication number Priority date Publication date Assignee Title
TWI803556B (zh) * 2018-12-28 2023-06-01 晶元光電股份有限公司 半導體疊層、半導體元件及其製造方法
CN114843384B (zh) * 2022-04-18 2025-05-16 厦门士兰明镓化合物半导体有限公司 一种发光二极管的外延结构及其制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148718A (ja) * 1994-09-19 1996-06-07 Toshiba Corp 化合物半導体装置
JPH11284222A (ja) * 1998-03-31 1999-10-15 Kyocera Corp 半導体装置
JP2009152448A (ja) * 2007-12-21 2009-07-09 Dowa Electronics Materials Co Ltd 窒化物半導体素子およびその製造方法
JP2010123803A (ja) * 2008-11-20 2010-06-03 Mitsubishi Chemicals Corp 窒化物半導体
JP2010141242A (ja) * 2008-12-15 2010-06-24 Opnext Japan Inc 窒化物半導体光素子およびその製造方法
JP2012141242A (ja) * 2011-01-05 2012-07-26 Fujifilm Corp 放射線撮影用電子カセッテ
JP2013026452A (ja) * 2011-07-21 2013-02-04 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体発光素子、及びｉｉｉ族窒化物半導体発光素子を作製する方法
JP2017143139A (ja) * 2016-02-09 2017-08-17 株式会社東芝 半導体装置およびその製造方法
JP2018116971A (ja) * 2017-01-16 2018-07-26 住友電工デバイス・イノベーション株式会社 半導体基板の製造方法

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1053146A (zh) 1991-02-04 1991-07-17 中国科学院西安光学精密机械研究所 砷化镓衬底上的混合并质外延
JP3326704B2 (ja) * 1993-09-28 2002-09-24 富士通株式会社 Ｉｉｉ／ｖ系化合物半導体装置の製造方法
US5740192A (en) * 1994-12-19 1998-04-14 Kabushiki Kaisha Toshiba Semiconductor laser
US5585648A (en) * 1995-02-03 1996-12-17 Tischler; Michael A. High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same
US5656538A (en) * 1995-03-24 1997-08-12 The Board Of Trustees Of The University Of Illinois Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices
JP3688843B2 (ja) * 1996-09-06 2005-08-31 株式会社東芝 窒化物系半導体素子の製造方法
JP4018177B2 (ja) * 1996-09-06 2007-12-05 株式会社東芝 窒化ガリウム系化合物半導体発光素子
US6232138B1 (en) * 1997-12-01 2001-05-15 Massachusetts Institute Of Technology Relaxed InxGa(1-x)as buffers
US20010042503A1 (en) 1999-02-10 2001-11-22 Lo Yu-Hwa Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates
JP3809464B2 (ja) * 1999-12-14 2006-08-16 独立行政法人理化学研究所 半導体層の形成方法
WO2002021599A2 (en) * 2000-09-08 2002-03-14 Showa Denko K.K. Compound semiconductor multilayer structure and bipolar transistor using the same
US6697412B2 (en) 2001-04-13 2004-02-24 Triquint Semiconductor, Inc. Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers
JP4054631B2 (ja) * 2001-09-13 2008-02-27 シャープ株式会社 半導体発光素子およびその製造方法、ｌｅｄランプ並びにｌｅｄ表示装置
JP3854560B2 (ja) * 2002-09-19 2006-12-06 富士通株式会社 量子光半導体装置
JP2004200671A (ja) * 2002-12-03 2004-07-15 Nec Corp 量子井戸構造を有する半導体光素子およびその製造方法
US7396697B2 (en) * 2003-04-28 2008-07-08 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and method for manufacturing the same
JP2006019713A (ja) * 2004-06-03 2006-01-19 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子およびそれを用いたｌｅｄ
US7816696B2 (en) * 2005-03-16 2010-10-19 Panasonic Corporation Nitride semiconductor device and method for manufacturing same
JP4187175B2 (ja) * 2006-03-13 2008-11-26 国立大学法人東北大学 窒化ガリウム系材料の製造方法
JP2008091789A (ja) * 2006-10-04 2008-04-17 Hitachi Cable Ltd 発光ダイオード
KR20100023960A (ko) * 2007-06-15 2010-03-04 로무 가부시키가이샤 질화물 반도체 발광 소자 및 질화물 반도체의 제조 방법
US8299480B2 (en) * 2008-03-10 2012-10-30 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same, and epitaxial wafer
WO2009118979A1 (ja) * 2008-03-28 2009-10-01 パナソニック株式会社 窒化物半導体発光装置
JP5040004B2 (ja) * 2008-06-23 2012-10-03 スタンレー電気株式会社 成膜装置および半導体素子の製造方法
JP2010251458A (ja) * 2009-04-14 2010-11-04 Sony Corp 半導体層およびその製造方法ならびに半導体レーザおよびその製造方法
US8293628B2 (en) * 2009-05-28 2012-10-23 Technion Research & Development Foundation Ltd. Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof
CN103222073B (zh) * 2010-08-03 2017-03-29 财团法人工业技术研究院 发光二极管芯片、发光二极管封装结构、及用以形成上述的方法
JP2012038973A (ja) * 2010-08-09 2012-02-23 Siltronic Ag シリコンウエハ及びその製造方法
JP2012089651A (ja) * 2010-10-19 2012-05-10 Showa Denko Kk Ｉｉｉ族窒化物半導体素子、多波長発光ｉｉｉ族窒化物半導体層及び多波長発光ｉｉｉ族窒化物半導体層の形成方法
JP5437533B2 (ja) * 2011-04-12 2014-03-12 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子およびその製造方法
JP5624940B2 (ja) * 2011-05-17 2014-11-12 古河電気工業株式会社 半導体素子及びその製造方法
TWI462334B (zh) * 2011-08-01 2014-11-21 Lextar Electronics Corp 發光二極體結構與其製造方法
US9312428B2 (en) * 2013-01-09 2016-04-12 Sensor Electronic Technology, Inc. Light emitting heterostructure with partially relaxed semiconductor layer
US9960315B2 (en) * 2013-01-09 2018-05-01 Sensor Electronic Technology, Inc. Light emitting heterostructure with partially relaxed semiconductor layer
EP3056592B1 (en) * 2013-10-09 2021-12-01 Osaka University Method for producing group iii nitride crystal and apparatus for producing group iii nitride crystal
JP6175009B2 (ja) * 2014-02-06 2017-08-02 住友化学株式会社 高耐圧窒化ガリウム系半導体デバイス及びその製造方法
KR20150104420A (ko) * 2014-03-05 2015-09-15 삼성전자주식회사 반도체 소자 및 그의 제조 방법
US9608103B2 (en) 2014-10-02 2017-03-28 Toshiba Corporation High electron mobility transistor with periodically carbon doped gallium nitride
JP6589662B2 (ja) * 2016-01-27 2019-10-16 住友電気工業株式会社 半導体積層体および受光素子
US10170303B2 (en) * 2016-05-26 2019-01-01 Robbie J. Jorgenson Group IIIA nitride growth system and method
CN106129197B (zh) * 2016-08-31 2019-04-09 中联西北工程设计研究院有限公司 一种垂直结构led紫光外延结构及其制备方法
US10665759B2 (en) * 2016-09-27 2020-05-26 Lumileds Llc Reflective structure for light emitting devices
US10403794B2 (en) 2017-03-30 2019-09-03 Epistar Corporation Semiconductor device
US10991835B2 (en) * 2018-08-09 2021-04-27 Array Photonics, Inc. Hydrogen diffusion barrier for hybrid semiconductor growth
TWI803556B (zh) * 2018-12-28 2023-06-01 晶元光電股份有限公司 半導體疊層、半導體元件及其製造方法
US11688825B2 (en) * 2019-01-31 2023-06-27 Industrial Technology Research Institute Composite substrate and light-emitting diode

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148718A (ja) * 1994-09-19 1996-06-07 Toshiba Corp 化合物半導体装置
JPH11284222A (ja) * 1998-03-31 1999-10-15 Kyocera Corp 半導体装置
JP2009152448A (ja) * 2007-12-21 2009-07-09 Dowa Electronics Materials Co Ltd 窒化物半導体素子およびその製造方法
JP2010123803A (ja) * 2008-11-20 2010-06-03 Mitsubishi Chemicals Corp 窒化物半導体
JP2010141242A (ja) * 2008-12-15 2010-06-24 Opnext Japan Inc 窒化物半導体光素子およびその製造方法
JP2012141242A (ja) * 2011-01-05 2012-07-26 Fujifilm Corp 放射線撮影用電子カセッテ
JP2013026452A (ja) * 2011-07-21 2013-02-04 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体発光素子、及びｉｉｉ族窒化物半導体発光素子を作製する方法
JP2017143139A (ja) * 2016-02-09 2017-08-17 株式会社東芝 半導体装置およびその製造方法
JP2018116971A (ja) * 2017-01-16 2018-07-26 住友電工デバイス・イノベーション株式会社 半導体基板の製造方法

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TW202027294A (zh) 2020-07-16
JP2025100614A (ja) 2025-07-03
US12057524B2 (en) 2024-08-06
CN111384219B (zh) 2025-07-11
US20240363804A1 (en) 2024-10-31
CN111384219A (zh) 2020-07-07
TWI803556B (zh) 2023-06-01
CN120857726A (zh) 2025-10-28
US20200212259A1 (en) 2020-07-02

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