TWI803556B - 半導體疊層、半導體元件及其製造方法 - Google Patents

半導體疊層、半導體元件及其製造方法 Download PDF

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TWI803556B
TWI803556B TW107147857A TW107147857A TWI803556B TW I803556 B TWI803556 B TW I803556B TW 107147857 A TW107147857 A TW 107147857A TW 107147857 A TW107147857 A TW 107147857A TW I803556 B TWI803556 B TW I803556B
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semiconductor layer
dopant
semiconductor
concentration
layer
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TW107147857A
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English (en)
Chinese (zh)
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TW202027294A (zh
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陳孟揚
李榮仁
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晶元光電股份有限公司
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Priority to TW107147857A priority Critical patent/TWI803556B/zh
Priority to JP2019235697A priority patent/JP2020109842A/ja
Priority to CN202510840714.1A priority patent/CN120857726A/zh
Priority to CN201911373222.7A priority patent/CN111384219B/zh
Priority to US16/728,769 priority patent/US12057524B2/en
Publication of TW202027294A publication Critical patent/TW202027294A/zh
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Publication of TWI803556B publication Critical patent/TWI803556B/zh
Priority to US18/763,617 priority patent/US20240363804A1/en
Priority to JP2025062847A priority patent/JP2025100614A/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages

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TW107147857A 2018-12-28 2018-12-28 半導體疊層、半導體元件及其製造方法 TWI803556B (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
TW107147857A TWI803556B (zh) 2018-12-28 2018-12-28 半導體疊層、半導體元件及其製造方法
JP2019235697A JP2020109842A (ja) 2018-12-28 2019-12-26 半導体スタック層、半導体素子及びその製造方法
CN202510840714.1A CN120857726A (zh) 2018-12-28 2019-12-27 半导体叠层、半导体元件及其制造方法
CN201911373222.7A CN111384219B (zh) 2018-12-28 2019-12-27 半导体叠层、半导体元件及其制造方法
US16/728,769 US12057524B2 (en) 2018-12-28 2019-12-27 Semiconductor stack, semiconductor device and method for manufacturing the same
US18/763,617 US20240363804A1 (en) 2018-12-28 2024-07-03 Semiconductor stack, semiconductor device and method for manufacturing the same
JP2025062847A JP2025100614A (ja) 2018-12-28 2025-04-07 半導体スタック層、半導体素子及びその製造方法

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Application Number Priority Date Filing Date Title
TW107147857A TWI803556B (zh) 2018-12-28 2018-12-28 半導體疊層、半導體元件及其製造方法

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TW202027294A TW202027294A (zh) 2020-07-16
TWI803556B true TWI803556B (zh) 2023-06-01

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US (2) US12057524B2 (enExample)
JP (2) JP2020109842A (enExample)
CN (2) CN120857726A (enExample)
TW (1) TWI803556B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI803556B (zh) * 2018-12-28 2023-06-01 晶元光電股份有限公司 半導體疊層、半導體元件及其製造方法
CN114843384B (zh) * 2022-04-18 2025-05-16 厦门士兰明镓化合物半导体有限公司 一种发光二极管的外延结构及其制备方法

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Also Published As

Publication number Publication date
CN111384219A (zh) 2020-07-07
JP2020109842A (ja) 2020-07-16
US20240363804A1 (en) 2024-10-31
JP2025100614A (ja) 2025-07-03
TW202027294A (zh) 2020-07-16
CN111384219B (zh) 2025-07-11
US12057524B2 (en) 2024-08-06
US20200212259A1 (en) 2020-07-02
CN120857726A (zh) 2025-10-28

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