CN120857726A - 半导体叠层、半导体元件及其制造方法 - Google Patents

半导体叠层、半导体元件及其制造方法

Info

Publication number
CN120857726A
CN120857726A CN202510840714.1A CN202510840714A CN120857726A CN 120857726 A CN120857726 A CN 120857726A CN 202510840714 A CN202510840714 A CN 202510840714A CN 120857726 A CN120857726 A CN 120857726A
Authority
CN
China
Prior art keywords
semiconductor layer
semiconductor
dopant
concentration
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202510840714.1A
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English (en)
Chinese (zh)
Inventor
陈孟扬
李荣仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of CN120857726A publication Critical patent/CN120857726A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages

Landscapes

  • Led Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Led Device Packages (AREA)
CN202510840714.1A 2018-12-28 2019-12-27 半导体叠层、半导体元件及其制造方法 Pending CN120857726A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW107147857A TWI803556B (zh) 2018-12-28 2018-12-28 半導體疊層、半導體元件及其製造方法
TW107147857 2018-12-28
CN201911373222.7A CN111384219B (zh) 2018-12-28 2019-12-27 半导体叠层、半导体元件及其制造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201911373222.7A Division CN111384219B (zh) 2018-12-28 2019-12-27 半导体叠层、半导体元件及其制造方法

Publications (1)

Publication Number Publication Date
CN120857726A true CN120857726A (zh) 2025-10-28

Family

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Family Applications (2)

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CN201911373222.7A Active CN111384219B (zh) 2018-12-28 2019-12-27 半导体叠层、半导体元件及其制造方法
CN202510840714.1A Pending CN120857726A (zh) 2018-12-28 2019-12-27 半导体叠层、半导体元件及其制造方法

Family Applications Before (1)

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Country Status (4)

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US (2) US12057524B2 (enExample)
JP (2) JP2020109842A (enExample)
CN (2) CN111384219B (enExample)
TW (1) TWI803556B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI803556B (zh) * 2018-12-28 2023-06-01 晶元光電股份有限公司 半導體疊層、半導體元件及其製造方法
CN114843384B (zh) * 2022-04-18 2025-05-16 厦门士兰明镓化合物半导体有限公司 一种发光二极管的外延结构及其制备方法

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1053146A (zh) 1991-02-04 1991-07-17 中国科学院西安光学精密机械研究所 砷化镓衬底上的混合并质外延
JP3326704B2 (ja) * 1993-09-28 2002-09-24 富士通株式会社 Ｉｉｉ／ｖ系化合物半導体装置の製造方法
JP3761935B2 (ja) * 1994-09-19 2006-03-29 株式会社東芝 化合物半導体装置
US5740192A (en) * 1994-12-19 1998-04-14 Kabushiki Kaisha Toshiba Semiconductor laser
US5585648A (en) * 1995-02-03 1996-12-17 Tischler; Michael A. High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same
US5656538A (en) * 1995-03-24 1997-08-12 The Board Of Trustees Of The University Of Illinois Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices
JP4018177B2 (ja) * 1996-09-06 2007-12-05 株式会社東芝 窒化ガリウム系化合物半導体発光素子
JP3688843B2 (ja) * 1996-09-06 2005-08-31 株式会社東芝 窒化物系半導体素子の製造方法
US6232138B1 (en) * 1997-12-01 2001-05-15 Massachusetts Institute Of Technology Relaxed InxGa(1-x)as buffers
JP3728093B2 (ja) * 1998-03-31 2005-12-21 京セラ株式会社 半導体装置
US20010042503A1 (en) 1999-02-10 2001-11-22 Lo Yu-Hwa Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates
JP3809464B2 (ja) * 1999-12-14 2006-08-16 独立行政法人理化学研究所 半導体層の形成方法
AU2001282579A1 (en) * 2000-09-08 2002-03-22 Showa Denko K K Compound semiconductor multilayer structure and bipolar transistor using the same
US6697412B2 (en) 2001-04-13 2004-02-24 Triquint Semiconductor, Inc. Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers
JP4054631B2 (ja) * 2001-09-13 2008-02-27 シャープ株式会社 半導体発光素子およびその製造方法、ｌｅｄランプ並びにｌｅｄ表示装置
JP3854560B2 (ja) * 2002-09-19 2006-12-06 富士通株式会社 量子光半導体装置
JP2004200671A (ja) * 2002-12-03 2004-07-15 Nec Corp 量子井戸構造を有する半導体光素子およびその製造方法
EP1569309B1 (en) * 2003-04-28 2007-10-17 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and method for manufacturing same
JP2006019713A (ja) * 2004-06-03 2006-01-19 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子およびそれを用いたｌｅｄ
CN101124704A (zh) * 2005-03-16 2008-02-13 松下电器产业株式会社 氮化物半导体装置及其制造方法
JP4187175B2 (ja) * 2006-03-13 2008-11-26 国立大学法人東北大学 窒化ガリウム系材料の製造方法
JP2008091789A (ja) * 2006-10-04 2008-04-17 Hitachi Cable Ltd 発光ダイオード
KR20100023960A (ko) * 2007-06-15 2010-03-04 로무 가부시키가이샤 질화물 반도체 발광 소자 및 질화물 반도체의 제조 방법
JP2009152448A (ja) * 2007-12-21 2009-07-09 Dowa Electronics Materials Co Ltd 窒化物半導体素子およびその製造方法
US8299480B2 (en) * 2008-03-10 2012-10-30 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same, and epitaxial wafer
JPWO2009118979A1 (ja) * 2008-03-28 2011-07-21 パナソニック株式会社 窒化物半導体発光装置
JP5040004B2 (ja) * 2008-06-23 2012-10-03 スタンレー電気株式会社 成膜装置および半導体素子の製造方法
JP5453780B2 (ja) * 2008-11-20 2014-03-26 三菱化学株式会社 窒化物半導体
JP5394717B2 (ja) * 2008-12-15 2014-01-22 日本オクラロ株式会社 窒化物半導体光素子の製造方法
JP2010251458A (ja) * 2009-04-14 2010-11-04 Sony Corp 半導体層およびその製造方法ならびに半導体レーザおよびその製造方法
US8653460B2 (en) * 2009-05-28 2014-02-18 Technion Research & Development Foundation Limited Method and system for detecting light
WO2012016377A1 (en) * 2010-08-03 2012-02-09 Industrial Technology Research Institute Light emitting diode chip, light emitting diode package structure, and method for forming the same
JP2012038973A (ja) * 2010-08-09 2012-02-23 Siltronic Ag シリコンウエハ及びその製造方法
JP2012089651A (ja) * 2010-10-19 2012-05-10 Showa Denko Kk Ｉｉｉ族窒化物半導体素子、多波長発光ｉｉｉ族窒化物半導体層及び多波長発光ｉｉｉ族窒化物半導体層の形成方法
JP5568486B2 (ja) * 2011-01-05 2014-08-06 富士フイルム株式会社 放射線撮影用電子カセッテ
WO2012140844A1 (ja) * 2011-04-12 2012-10-18 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子およびその製造方法
JP5624940B2 (ja) * 2011-05-17 2014-11-12 古河電気工業株式会社 半導体素子及びその製造方法
JP5252042B2 (ja) * 2011-07-21 2013-07-31 住友電気工業株式会社 Ｉｉｉ族窒化物半導体発光素子、及びｉｉｉ族窒化物半導体発光素子を作製する方法
TWI462334B (zh) * 2011-08-01 2014-11-21 Lextar Electronics Corp 發光二極體結構與其製造方法
US9960315B2 (en) * 2013-01-09 2018-05-01 Sensor Electronic Technology, Inc. Light emitting heterostructure with partially relaxed semiconductor layer
WO2014110195A1 (en) * 2013-01-09 2014-07-17 Sensor Electronic Technology, Inc. Light emitting heterostructure with partially relaxed semiconductor layer
US10026612B2 (en) * 2013-10-09 2018-07-17 Osaka University Method for producing group III nitride crystal, group III nitride crystal, semiconductor device and apparatus for producing group III nitride crystal
JP6175009B2 (ja) * 2014-02-06 2017-08-02 住友化学株式会社 高耐圧窒化ガリウム系半導体デバイス及びその製造方法
KR20150104420A (ko) * 2014-03-05 2015-09-15 삼성전자주식회사 반도체 소자 및 그의 제조 방법
US9608103B2 (en) 2014-10-02 2017-03-28 Toshiba Corporation High electron mobility transistor with periodically carbon doped gallium nitride
JP6589662B2 (ja) * 2016-01-27 2019-10-16 住友電気工業株式会社 半導体積層体および受光素子
JP2017143139A (ja) * 2016-02-09 2017-08-17 株式会社東芝 半導体装置およびその製造方法
WO2017205815A2 (en) * 2016-05-26 2017-11-30 Robbie Jorgenson Group iiia nitride growth system and method
JP6819009B2 (ja) * 2017-01-16 2021-01-27 住友電工デバイス・イノベーション株式会社 半導体基板の製造方法
CN106129197B (zh) * 2016-08-31 2019-04-09 中联西北工程设计研究院有限公司 一种垂直结构led紫光外延结构及其制备方法
US10665759B2 (en) * 2016-09-27 2020-05-26 Lumileds Llc Reflective structure for light emitting devices
US10403794B2 (en) 2017-03-30 2019-09-03 Epistar Corporation Semiconductor device
WO2020033706A1 (en) * 2018-08-09 2020-02-13 Array Photonics, Inc. Hydrogen diffusion barrier for hybrid semiconductor growth
TWI803556B (zh) * 2018-12-28 2023-06-01 晶元光電股份有限公司 半導體疊層、半導體元件及其製造方法
US11688825B2 (en) * 2019-01-31 2023-06-27 Industrial Technology Research Institute Composite substrate and light-emitting diode

Also Published As

Publication number Publication date
TW202027294A (zh) 2020-07-16
JP2025100614A (ja) 2025-07-03
US12057524B2 (en) 2024-08-06
CN111384219B (zh) 2025-07-11
CN111384219A (zh) 2020-07-07
US20200212259A1 (en) 2020-07-02
JP2020109842A (ja) 2020-07-16
US20240363804A1 (en) 2024-10-31
TWI803556B (zh) 2023-06-01

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