JP2020021733A - 電子光学系及びマルチビーム画像取得装置 - Google Patents
電子光学系及びマルチビーム画像取得装置 Download PDFInfo
- Publication number
- JP2020021733A JP2020021733A JP2019142544A JP2019142544A JP2020021733A JP 2020021733 A JP2020021733 A JP 2020021733A JP 2019142544 A JP2019142544 A JP 2019142544A JP 2019142544 A JP2019142544 A JP 2019142544A JP 2020021733 A JP2020021733 A JP 2020021733A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- magnetic field
- yoke
- substrate
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 29
- 238000010894 electron beam technology Methods 0.000 claims abstract description 134
- 239000000758 substrate Substances 0.000 claims description 87
- 239000000696 magnetic material Substances 0.000 claims description 8
- 238000007689 inspection Methods 0.000 description 52
- 238000010586 diagram Methods 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 19
- 238000013461 design Methods 0.000 description 17
- 238000005259 measurement Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 11
- 238000003860 storage Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 238000001514 detection method Methods 0.000 description 9
- 238000011144 upstream manufacturing Methods 0.000 description 7
- 238000012937 correction Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004556 laser interferometry Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical or photographic arrangements associated with the tube
- H01J37/222—Image processing arrangements associated with the tube
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/14—Lenses magnetic
- H01J37/141—Electromagnetic lenses
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6113—Specific applications or type of materials patterned objects; electronic devices printed circuit board [PCB]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/14—Lenses magnetic
- H01J2237/1405—Constructional details
- H01J2237/141—Coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/14—Lenses magnetic
- H01J2237/1405—Constructional details
- H01J2237/1415—Bores or yokes, i.e. magnetic circuit in general
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24592—Inspection and quality control of devices
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
ヨークを有し、磁場を発生させて前記ヨーク内を通過する電子ビームを屈折させる電磁レンズと、
前記ヨークの内壁に沿って配置された、前記電磁レンズによって生じる漏れ磁界を低減するシールドコイルと、
を備えたことを特徴とする。
ヨークを有し、磁場を発生させて前記ヨーク内を通過する1次マルチ電子ビームを屈折させる電磁レンズと、
前記ヨークの内壁に沿って配置された、前記電磁レンズによって生じる漏れ磁界を低減するシールドコイルと、
前記ヨーク内に配置され、前記電磁レンズを通過した前記1次マルチ電子ビームが基板に照射されることに起因して生じる、反射電子を含む2次電子ビームを前記ヨーク内で前記1次マルチ電子ビームから分離する、磁性体を含む構成物で構成されるビームセパレーターと、
分離された前記2次電子ビームを検出する検出器と、
を備えたことを特徴とする。
図1は、実施の形態1におけるパターン検査装置の構成を示す構成図である。図1において、基板に形成されたパターンを検査する検査装置100は、マルチ電子ビーム検査装置の一例である。検査装置100は、画像取得機構150、及び制御系回路160を備えている。画像取得機構150は、電子ビームカラム102(電子鏡筒ともいう。)(マルチビームカラムの一例)、検査室103、検出回路106、チップパターンメモリ123、ステージ駆動機構142、及びレーザ測長システム122を備えている。電子ビームカラム102内には、電子銃201、照明レンズ202、成形アパーチャアレイ基板203、電磁レンズ205、一括ブランキング偏向器212、制限アパーチャ基板206、電磁レンズ220、ビームセパレーター214、対物レンズ207、シールドコイル221、偏向器208、投影レンズ224、及びマルチ検出器222が配置されている。
図12は、実施の形態1におけるシールドコイルを設け、漏れ磁場を補正した状態で撮像された画像の一例を示す図である。図11に示すように、対物レンズ207のヨーク217内の磁性体部品(ビームセパレーター214)で生じる漏れ磁場による磁界の集中により、ビーム軌道がずれてしまうので、焦点位置がずれ、得られる画像がボケてしまう。これに対して、シールドコイル221により、対物レンズ207で生じる漏れ磁場をヨーク217内壁付近で解消或いは低減することで、ヨーク217内の磁性体部品(ビームセパレーター214)での磁界の集中を抑制できる。そのため、ビーム軌道が漏れ磁場に起因したずれが生じないので焦点位置のずれが抑制され、図12に示すように、補正前に比べて鮮明な画像を得ることができる。
20 マルチ1次電子ビーム
22 穴
29 サブ照射領域
33 マスクダイ
34 照射領域
50,52,56 記憶装置
54 被検査画像生成部
57 位置合わせ部
58 比較部
100 検査装置
101 基板
102 電子ビームカラム
103 検査室
105 XYステージ
106 検出回路
107 位置回路
108 比較回路
109 記憶装置
110 制御計算機
112 参照画像作成回路
114 ステージ制御回路
117 モニタ
118 メモリ
119 プリンタ
120 バス
121 シールドコイル制御回路
122 レーザ測長システム
123 チップパターンメモリ
124 レンズ制御回路
126 ブランキング制御回路
128 偏向制御回路
142 ステージ駆動機構
144,148 DACアンプ
150 画像取得機構
160 制御系回路
201 電子銃
202 照明レンズ
203 成形アパーチャアレイ基板
205 電磁レンズ
206 制限アパーチャ基板
207 対物レンズ
208 偏向器
200 電子ビーム
212 一括ブランキング偏向器
214 ビームセパレーター
216 ミラー
217 ヨーク
218 コイル
220 電磁レンズ
221 シールドコイル
222 マルチ検出器
224 投影レンズ
300 マルチ2次電子ビーム
330 検査領域
332 チップ
Claims (6)
- ヨークを有し、磁場を発生させて前記ヨーク内を通過する電子ビームを屈折させる電磁レンズと、
前記ヨークの内壁に沿って配置された、前記電磁レンズによって生じる漏れ磁界を低減するシールドコイルと、
を備えたことを特徴とする電子光学系。 - 前記シールドコイルは、前記ヨークの内壁に沿って多段に配置されることを特徴とする請求項1記載の電子光学系。
- 少なくとも一部が前記ヨーク内に配置された、磁性体を含む構成物で構成される電子光学機器をさらに備えたことを特徴とする請求項1記載の電子光学系。
- 前記電磁レンズには、1次電子ビームと、前記1次電子ビームとは逆方向に進む、前記1次電子ビームが基板に照射されることに起因して生じる、反射電子を含む2次電子ビームとが通過し、
前記電子光学機器として、前記1次電子ビームと前記2次電子ビームとを分離するビームセパレーターが用いられることを特徴とする請求項3記載の電子光学系。 - 前記電磁レンズには、1次電子ビームと、前記1次電子ビームとは逆方向に進む、前記1次電子ビームが基板に照射されることに起因して生じる、反射電子を含む2次電子ビームとが通過し、
前記電子光学機器として、前記2次電子ビームを偏向する偏向器が用いられることを特徴とする請求項3記載の電子光学系。 - ヨークを有し、磁場を発生させて前記ヨーク内を通過する1次マルチ電子ビームを屈折させる電磁レンズと、
前記ヨークの内壁に沿って配置された、前記電磁レンズによって生じる漏れ磁界を低減するシールドコイルと、
前記ヨーク内に配置され、前記電磁レンズを通過した前記1次マルチ電子ビームが基板に照射されることに起因して生じる、反射電子を含む2次電子ビームを前記ヨーク内で前記1次マルチ電子ビームから分離する、磁性体を含む構成物で構成されるビームセパレーターと、
分離された前記2次電子ビームを検出する検出器と、
を備えたことを特徴とするマルチ電子ビーム画像取得装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862714245P | 2018-08-03 | 2018-08-03 | |
US62/714,245 | 2018-08-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2020021733A true JP2020021733A (ja) | 2020-02-06 |
Family
ID=69227875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019142544A Pending JP2020021733A (ja) | 2018-08-03 | 2019-08-01 | 電子光学系及びマルチビーム画像取得装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11621144B2 (ja) |
JP (1) | JP2020021733A (ja) |
KR (2) | KR20200015425A (ja) |
TW (1) | TWI744671B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022091475A1 (ja) * | 2020-10-28 | 2022-05-05 | 株式会社ニューフレアテクノロジー | ウィーンフィルタ及びマルチ電子ビーム検査装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7442375B2 (ja) * | 2020-04-06 | 2024-03-04 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム検査装置及びマルチ電子ビーム検査方法 |
JP2021183942A (ja) * | 2020-05-22 | 2021-12-02 | 株式会社ニューフレアテクノロジー | パターン検査装置及びパターン検査方法 |
CN116157891A (zh) * | 2020-09-28 | 2023-05-23 | 株式会社日立高新技术 | 解析系统 |
NL2034496B1 (en) * | 2023-04-04 | 2024-03-05 | Phe Nx Knowledge B V | Electro-magnetic lens for charged particle apparatus. |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60178960U (ja) * | 1984-05-09 | 1985-11-28 | 日本電子株式会社 | 走査電子顕微鏡用対物レンズ |
US20070215812A1 (en) * | 2004-04-23 | 2007-09-20 | Hans-Joachim Doering | Correction Lens System for a Particle Beam Projection Device |
US20080135755A1 (en) * | 2006-12-11 | 2008-06-12 | Hitachi High-Technologies Corporation | Scanning Electron Microscope |
JP2011049041A (ja) * | 2009-08-27 | 2011-03-10 | Hitachi High-Technologies Corp | 走査型電子顕微鏡装置及びそれを用いた試料の検査方法 |
WO2012057166A1 (ja) * | 2010-10-27 | 2012-05-03 | 株式会社Param | 電子レンズおよび電子ビーム装置 |
WO2013065399A1 (ja) * | 2011-10-31 | 2013-05-10 | 株式会社 日立ハイテクノロジーズ | 走査電子顕微鏡 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4929089B1 (ja) * | 1970-05-13 | 1974-08-01 | ||
US3984687A (en) * | 1975-03-17 | 1976-10-05 | International Business Machines Corporation | Shielded magnetic lens and deflection yoke structure for electron beam column |
US4469948A (en) * | 1982-01-26 | 1984-09-04 | The Perkin-Elmer Corp. | Composite concentric-gap magnetic lens |
JPH06325721A (ja) | 1993-05-13 | 1994-11-25 | Hitachi Ltd | 電子線装置 |
DE69633505T2 (de) * | 1996-07-25 | 2005-03-03 | Advantest Corp. | Ablenksystem |
JP3449198B2 (ja) * | 1997-10-22 | 2003-09-22 | 日新電機株式会社 | イオン注入装置 |
JP4234242B2 (ja) | 1997-12-19 | 2009-03-04 | 株式会社東芝 | 電子ビーム描画装置 |
US6891167B2 (en) * | 2000-06-15 | 2005-05-10 | Kla-Tencor Technologies | Apparatus and method for applying feedback control to a magnetic lens |
US6768117B1 (en) * | 2000-07-25 | 2004-07-27 | Applied Materials, Inc. | Immersion lens with magnetic shield for charged particle beam system |
JP2002170764A (ja) * | 2000-12-04 | 2002-06-14 | Nikon Corp | 荷電粒子線露光装置、荷電粒子線露光装置の調整方法及び半導体デバイスの製造方法 |
JP3968334B2 (ja) * | 2002-09-11 | 2007-08-29 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置及び荷電粒子線照射方法 |
CN1820346B (zh) | 2003-05-09 | 2011-01-19 | 株式会社荏原制作所 | 基于带电粒子束的检查装置及采用了该检查装置的器件制造方法 |
JP4528014B2 (ja) * | 2004-04-05 | 2010-08-18 | 株式会社日立ハイテクノロジーズ | 試料検査方法 |
JP4431459B2 (ja) * | 2004-07-29 | 2010-03-17 | 株式会社日立ハイテクノロジーズ | 集束イオン・ビーム装置及び集束イオン・ビーム照射方法 |
JP4732917B2 (ja) * | 2006-02-15 | 2011-07-27 | 株式会社日立ハイテクノロジーズ | 走査型電子顕微鏡及び欠陥検出装置 |
JP4716284B2 (ja) * | 2006-03-29 | 2011-07-06 | 国立大学法人大阪大学 | 荷電粒子線偏向装置および荷電粒子線照射装置 |
JP4922962B2 (ja) | 2008-02-14 | 2012-04-25 | 株式会社日立ハイテクノロジーズ | 回路パターンの検査方法及び検査装置 |
JP5380443B2 (ja) * | 2008-06-25 | 2014-01-08 | 株式会社日立ハイテクノロジーズ | 半導体検査装置 |
DE102011106433B4 (de) * | 2011-07-04 | 2016-10-13 | Integrated Dynamics Engineering Gmbh | Integrierbare Magnetfeldkompensation für den Einsatz an Raster- und Transmissionselektronenmikroskopen, Schwingungsisolationssystem sowie Verfahren zum Abbilden, Untersuchen und / oder Bearbeiten einer Probe |
JP5836838B2 (ja) * | 2012-02-27 | 2015-12-24 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
JP6138454B2 (ja) * | 2012-10-29 | 2017-05-31 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
US9922799B2 (en) * | 2015-07-21 | 2018-03-20 | Hermes Microvision, Inc. | Apparatus of plural charged-particle beams |
US10460905B2 (en) * | 2015-09-23 | 2019-10-29 | Kla-Tencor Corporation | Backscattered electrons (BSE) imaging using multi-beam tools |
US10453645B2 (en) * | 2016-12-01 | 2019-10-22 | Applied Materials Israel Ltd. | Method for inspecting a specimen and charged particle multi-beam device |
CN106783492A (zh) * | 2016-12-14 | 2017-05-31 | 聚束科技(北京)有限公司 | 一种磁透镜及激励电流控制方法 |
CN111033676B (zh) * | 2017-09-04 | 2022-08-30 | 株式会社日立高新技术 | 带电粒子线装置 |
DE112017007776B4 (de) * | 2017-09-04 | 2023-05-25 | Hitachi High-Technologies Corporation | Ladungsträgerstrahlvorrichtung |
WO2019211123A1 (en) * | 2018-05-02 | 2019-11-07 | Asml Netherlands B.V. | E-beam apparatus |
-
2019
- 2019-07-30 TW TW108126976A patent/TWI744671B/zh active
- 2019-07-30 US US16/525,792 patent/US11621144B2/en active Active
- 2019-08-01 JP JP2019142544A patent/JP2020021733A/ja active Pending
- 2019-08-02 KR KR1020190094323A patent/KR20200015425A/ko not_active IP Right Cessation
-
2021
- 2021-11-11 KR KR1020210154547A patent/KR102532712B1/ko active IP Right Grant
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60178960U (ja) * | 1984-05-09 | 1985-11-28 | 日本電子株式会社 | 走査電子顕微鏡用対物レンズ |
US20070215812A1 (en) * | 2004-04-23 | 2007-09-20 | Hans-Joachim Doering | Correction Lens System for a Particle Beam Projection Device |
JP2007534121A (ja) * | 2004-04-23 | 2007-11-22 | ヴィステック エレクトロン ビーム ゲーエムべーハー | 粒子ビーム射出装置用の補正レンズ系 |
US20080135755A1 (en) * | 2006-12-11 | 2008-06-12 | Hitachi High-Technologies Corporation | Scanning Electron Microscope |
JP2008147013A (ja) * | 2006-12-11 | 2008-06-26 | Hitachi High-Technologies Corp | 走査電子顕微鏡 |
JP2011049041A (ja) * | 2009-08-27 | 2011-03-10 | Hitachi High-Technologies Corp | 走査型電子顕微鏡装置及びそれを用いた試料の検査方法 |
WO2012057166A1 (ja) * | 2010-10-27 | 2012-05-03 | 株式会社Param | 電子レンズおよび電子ビーム装置 |
US20130134322A1 (en) * | 2010-10-27 | 2013-05-30 | Param Corporation | Electron lens and the electron beam device |
WO2013065399A1 (ja) * | 2011-10-31 | 2013-05-10 | 株式会社 日立ハイテクノロジーズ | 走査電子顕微鏡 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022091475A1 (ja) * | 2020-10-28 | 2022-05-05 | 株式会社ニューフレアテクノロジー | ウィーンフィルタ及びマルチ電子ビーム検査装置 |
JPWO2022091475A1 (ja) * | 2020-10-28 | 2022-05-05 |
Also Published As
Publication number | Publication date |
---|---|
TW202032114A (zh) | 2020-09-01 |
KR20210137966A (ko) | 2021-11-18 |
US20200043698A1 (en) | 2020-02-06 |
KR20200015425A (ko) | 2020-02-12 |
US11621144B2 (en) | 2023-04-04 |
KR102532712B1 (ko) | 2023-05-15 |
TWI744671B (zh) | 2021-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6684179B2 (ja) | 荷電粒子ビーム検査装置及び荷電粒子ビーム検査方法 | |
JP6966255B2 (ja) | 画像取得装置の光学系調整方法 | |
KR102532712B1 (ko) | 전자 광학계 및 멀티 빔 화상 취득 장치 | |
US10886102B2 (en) | Multiple electron beam irradiation apparatus, multiple electron beam irradiation method, and multiple electron beam inspection apparatus | |
KR20180011735A (ko) | 전자빔 검사 장치 및 전자빔 검사 방법 | |
JP2019204694A (ja) | マルチ電子ビーム画像取得装置及びマルチ電子ビーム光学系の位置決め方法 | |
US10727026B2 (en) | Charged particle beam inspection method | |
KR20190009711A (ko) | 패턴 검사 장치 및 패턴 검사 방법 | |
US10768126B2 (en) | Multiple charged particle beam inspection apparatus and multiple charged particle beam inspection method | |
JP2020053380A (ja) | マルチ電子ビーム画像取得装置及びマルチ電子ビーム画像取得方法 | |
TWI737117B (zh) | 多電子束照射裝置 | |
KR20200143275A (ko) | 수치 보정기 및 다중 전자 빔 조사 장치 | |
US11004193B2 (en) | Inspection method and inspection apparatus | |
US10984525B2 (en) | Pattern inspection method and pattern inspection apparatus | |
US10937623B2 (en) | Deflector for multiple electron beams and multiple beam image acquiring apparatus | |
US20230077403A1 (en) | Multi-electron beam image acquisition apparatus, and multi-electron beam image acquisition method | |
JP6966319B2 (ja) | マルチビーム画像取得装置及びマルチビーム画像取得方法 | |
JP2018151202A (ja) | 電子ビーム検査装置および電子ビーム検査方法 | |
JP2020085757A (ja) | 検査装置及び検査方法 | |
KR20220106057A (ko) | 멀티 빔 화상 취득 장치 및 멀티 빔 화상 취득 방법 | |
JP2019207804A (ja) | マルチ電子ビーム画像取得装置およびマルチ電子ビーム画像取得方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220706 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230327 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230404 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230621 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230801 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230926 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20231114 |