WO2012057166A1 - 電子レンズおよび電子ビーム装置 - Google Patents
電子レンズおよび電子ビーム装置 Download PDFInfo
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- WO2012057166A1 WO2012057166A1 PCT/JP2011/074588 JP2011074588W WO2012057166A1 WO 2012057166 A1 WO2012057166 A1 WO 2012057166A1 JP 2011074588 W JP2011074588 W JP 2011074588W WO 2012057166 A1 WO2012057166 A1 WO 2012057166A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/14—Arrangements for focusing or reflecting ray or beam
- H01J3/20—Magnetic lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/14—Arrangements for focusing or reflecting ray or beam
- H01J3/20—Magnetic lenses
- H01J3/24—Magnetic lenses using permanent magnets only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/14—Lenses magnetic
- H01J37/141—Electromagnetic lenses
- H01J37/1416—Electromagnetic lenses with superconducting coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/14—Lenses magnetic
- H01J37/143—Permanent magnetic lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/14—Lenses magnetic
- H01J2237/1405—Constructional details
Definitions
- the present invention relates to an electron beam apparatus such as an electron lens, a multi-column electron beam drawing apparatus, and an electron beam inspection apparatus in an electron beam drawing technique utilized in the lithography field for drawing a circuit pattern in a semiconductor (LSI) manufacturing process.
- an electron beam apparatus such as an electron lens, a multi-column electron beam drawing apparatus, and an electron beam inspection apparatus in an electron beam drawing technique utilized in the lithography field for drawing a circuit pattern in a semiconductor (LSI) manufacturing process.
- LSI semiconductor
- semiconductor lithography technology has achieved miniaturization, high integration, and cost reduction by photoengraving technology using light. From the principle that resolution is improved by shortening the wavelength of light, the wavelength of light has been shortened with the progress of miniaturization, and has changed from g-line (wavelength 436 nm) to i-line (wavelength 365 nm). Excimer laser light having a wavelength of 193 nm is used. In the future, lithography technology using 13.5 nm ultrashort ultraviolet (EUV) having a shorter wavelength will be energetically developed.
- EUV ultrashort ultraviolet
- the processing capacity per unit time of the electron beam lithography system is improved for the purpose of suppressing the increase in the mask price and realizing the direct drawing by the electron beam lithography system without using an expensive mask. Therefore, a multi-beam type apparatus using a plurality of electron beams has been proposed, and it is expected to increase the processing capability by several tens of times.
- the electrons emitted from the electron gun are divided and shaped into a plurality of electron beams through a structure (splitter) having a large number of holes.
- the spacing between the splitters is in units of micrometers, so that the uniformity of the intensity of the electron beam entering each hole, the axis adjustment for each divided electron beam, and the deflection position are determined. For this reason, a method is used in which a single electron lens optical column (column) is used for a plurality of electron beams and only ON / OFF is individually controlled to obtain a drawing pattern.
- a single electron lens optical column column
- it is difficult to adjust the intensity of each of the divided beams with the accuracy required for drawing and there is a disadvantage that the drawing cannot be performed with high accuracy.
- the beam in one column has the same negative charge, so if the total amount of electrons is large, the electrons will repel each other due to the Coulomb repulsion, and beam blur will become prominent. For example to a few microamps.
- the multi-electron beam technology is attracting attention as a technology that overcomes the limit of the processing capacity per electron beam.
- the electron optical column (referred to as a column) also has a plurality of each electron beam independently. This is called a multi-column system, and has a structure in which dozens of single element columns are bundled.
- the conventional electron beam lithography system using a single column has a processing capacity of 0.1 to 0.2 sheets per hour. Therefore, in order to realize a processing capacity of 10 to 20 sheets per hour as a multi-column system in which a plurality of columns are arranged in parallel, it is necessary to arrange about 100 columns in a 300 mm wafer. In that case, the columns must be arranged in rectangular or square grid coordinates. For example, when one square is a square grid of 25 mm, it is necessary to arrange 132 or 120 multi-columns in a 300 mm circle. The required number of multi-columns comes from the demand for processing capacity.
- the thickness of one column must be at most approximately 25 mm or less.
- the maximum diameter of the electron lens must be about 23 mm or less.
- Electron lenses include electrostatic and electromagnetic types. With an electrostatic lens, it is easy to make an electron lens having a diameter of 23 mm or less. In addition, the electrostatic lens is suitable for multi-column because it is easy to match the potential of all the lenses. However, electrostatic lenses are not suitable for constructing an electron beam drawing apparatus. The reason is that an electrostatic deflector is frequently used in an electron beam drawing apparatus. This is because an electrostatic deflector can deflect an electron beam at high speed. The electromagnetic deflector, which is another deflection option, is rarely used in a high-speed drawing apparatus because it takes time to switch the deflector for positioning the electron beam due to problems of eddy current and inductance.
- an electrostatic lens cannot be used in a drawing apparatus having a short distance between the electrostatic deflector and the electrostatic lens. Increasing the distance between the electrostatic deflector and the electrostatic lens results in a long column, and beam blur due to Coulomb repulsion increases, so the upper limit of the total amount of electron beams that can be used must be limited to a small value. Therefore, the processing capability of the electron beam drawing apparatus is reduced. Therefore, an electrostatic lens cannot be used in an electron beam lithography apparatus that aims to increase the wafer rendering throughput.
- an electron lens using a permanent magnet having the above shape cannot form a lens suitable for multi-columns.
- a lens suitable for multi-column needs to have at least a large space inside the lens so that an electrostatic deflector having a diameter of several millimeters or more can be installed therein. And it must be such that the electrostatic deflection field can be superimposed on the converging magnetic field. The reason is that it is an indispensable condition for shortening the overall length of the column, reducing beam blur due to the Coulomb effect, and reducing convergent deflection aberration.
- the lens diameter In order to arrange several tens or more on a 300 mm wafer, the lens diameter must be 23 mm or less. In the electron lens using the permanent magnet having the above shape, it is unlikely that the outer diameter can be reduced to 23 mm or less.
- a variable rectangular beam or cell projection (hereinafter abbreviated as CP) is often used.
- CP variable rectangular beam or cell projection
- the vertical and horizontal dimensions of the rectangular beam are arbitrarily changed by deflecting the electron beam image between the first rectangular aperture and the second rectangular aperture.
- a partial pattern included in a small section of a pattern used for an LSI pattern is formed as a perforated mask on a silicon mask pattern as a CP pattern, and a rectangular portion of a predetermined region on the CP mask is selectively irradiated with a beam.
- partial batch transfer is performed by performing beam shaping according to a perforated mask.
- it may be a multi-column / multi-beam system in which hundreds to thousands of individual beams are drawn in a single column by using a bitmap in an ON or OFF state.
- Patent Document 1 shows an example of an electron lens using a permanent magnet (FIG. 5). This electronic lens can achieve low power consumption. However, with this electron lens, when a plurality of columns are arranged for a multi-column, a large number of the lenses cannot be arranged, and a high-throughput multi-beam electron beam drawing apparatus cannot be constructed. In addition, temperature stability could not be obtained, and focus and irradiation position stability of individual beams could not be obtained.
- the electrostatic lens cannot be used in the electron beam multi-column due to the problem of interference with the electrostatic deflector.
- a magnetic lens can be used, but if all the multi-column lenses of several tens or more are configured with electromagnetic coils, the amount of heat generation becomes enormous and fails.
- Patent Document 1 also shows an example of an electronic lens using a permanent magnet (FIG. 5).
- FIG. 5 shows an example of an electronic lens using a permanent magnet.
- 10 wafers / hour or more of 300 mm silicon wafers are used.
- a lens having a thickness of 23 mm or less that can be arranged in parallel to several tens, which is a necessary number for obtaining the processing capability cannot be formed.
- a correction coil for adjusting the strength is provided near the permanent magnet. It is necessary to install and pass current.
- This correction coil has a magnetic field strength of ⁇ 5% or less. The heat generated by these coils easily changes the temperature of the permanent magnet and changes the magnetic field strength. This impairs the stability of the magnetic lens.
- the present invention is an electron lens used in an electron beam apparatus including an electron gun that emits an electron beam in the Z-axis direction, the outer cylinder made of a cylindrical ferromagnet having the Z axis as a central axis, A cylindrical permanent magnet magnetized in the Z-axis direction, disposed inside the outer cylinder, and a Z-axis formed by the permanent magnet, disposed inside or outside the permanent magnet with a gap from the permanent magnet.
- a correction coil that adjusts the magnetic field strength in the direction, the permanent magnet, and a refrigerant flow path that is arranged in a gap between the correction coil and that circulates a refrigerant therein to suppress a temperature change of the permanent magnet. It is characterized by having.
- a thin ferromagnetic ring that averages the magnetic field generated by the cylindrical permanent magnet on the end surface in the Z-axis direction on the electron beam exit side of the cylindrical permanent magnet.
- the cylindrical permanent magnet includes a first cylindrical permanent magnet that is arranged side by side in the Z-axis direction and is positioned on the electron beam incident side and a second cylindrical permanent magnet that is positioned on the electron beam emission side.
- the first cylindrical permanent magnet and the second cylindrical permanent magnet are magnetized so as to generate magnetic fields in opposite directions, and the first cylindrical permanent magnet has an inner diameter as compared with the second cylindrical permanent magnet. It is preferable that the central magnetic field generated by the second cylindrical permanent magnet is superimposed on the central magnetic field generated by the first cylindrical permanent magnet.
- the refrigerant channel has a cylindrical channel located in the gap.
- a plurality of electron beams in which a plurality of the electron lenses are arranged on a plane substantially orthogonal to the Z axis are irradiated toward the sample.
- an electron lens with a magnetic field that converges and images at least one stage of the electron beam has an outer cylindrical radius with the traveling direction of the electron beam as a central axis.
- a cylindrical radial direction comprising a ferromagnet made of a directional thin ferromagnet and magnetized in a radial direction having a length of approximately one half or less inside a cylindrical radial thin ferromagnet on the outer periphery.
- a cylindrical radius comprising a thin-walled permanent magnet, and having a cylindrical radially thin-walled ferromagnetic material on the inner periphery at least substantially the same length as the cylindrical thin-walled permanent magnet inside the cylindrical-shaped radial thin-walled permanent magnet
- a plurality of directional thin magnetic field type electron lenses are arranged in parallel to the traveling direction of the electron beam.
- a permanent magnet is used as the main magnetic field generating means of the electron lens, and in order to accurately match the required strength as the desired magnetic lens, a correction coil for adjusting the strength is installed in the vicinity of the permanent magnet to pass current.
- the space containing the permanent magnet is filled with liquid and circulated, the temperature of the entire liquid is made constant, and the magnetic field strength of the permanent magnet is increased. It is preferred to stabilize.
- an electronic lens can be configured using a permanent magnet magnetized in the axial direction, and adverse effects of heat generated by the correction coil can be suppressed.
- the magnetic field generated by the cylindrical radial thin permanent magnet magnetized in the radial direction with the electron beam axis as the central axis can form a magnetic field type electron lens with almost no electric power and has a diameter of 23 mm. Since the following electron lens can be configured, a high-speed electron beam drawing apparatus that draws 10 or more 300 mm wafers per hour can be manufactured. Further, the Joule heat generated by the coil for adjusting the magnetic field strength is stabilized by the temperature of the liquid, so that the permanent magnet strength is stabilized and an electron beam drawing apparatus having a stable lens strength can be obtained.
- FIG. 2 is a cross-sectional view taken along a plane (FIG. 1A-A ′ plane) perpendicular to the central axis of the cylinder of the electron lens of the present invention. It is a figure of the multi-column electron beam drawing apparatus using the electron lens of this invention.
- FIG. 5 is a diagram of an electron lens disclosed in Japanese Patent Application Laid-Open No. 2007-31117 of Patent Document 1. It is explanatory drawing of a multi column and a wafer. It is a longitudinal cross-sectional view of an electron beam drawing apparatus.
- the present embodiment is a multi-column electron beam apparatus that uses a large number of electron beams to dramatically increase the processing capability in the electron beam lithography technology utilized in the lithography field for drawing circuit patterns in semiconductor (LSI) manufacturing processes.
- the present invention relates to an electron lens using a permanent magnet and a multi-column electron beam drawing apparatus using the same, which can have a fine-diameter lens structure and enables high-precision drawing with low power consumption.
- the lens technology at the center of the technology can be used in the same way for electron beam inspection equipment using electron beams, and the effect can also be increased by paralleling, so it can also be applied to multi-column electron beam inspection equipment. Is mainly performed for an electron beam drawing apparatus.
- FIG. 1 is a view for explaining a first embodiment of the electron lens of the present invention.
- the electron lens is used in at least one stage in an electron beam apparatus including a plurality of electron guns that emit an electron beam in the Z direction.
- An electron lens using a magnetic field that converges and forms an image of at least one stage of an electron beam includes a ferromagnet made of a cylindrical thin radial ferromagnet 101 on the outer periphery with the Z axis as a central axis.
- a cylindrical radial thin permanent magnet 102 magnetized in the radial direction having a length of approximately 1 ⁇ 2 or less is provided inside the radially thin ferromagnetic material, and inside the cylindrical radial thin permanent magnet.
- a cylindrical radial thin-walled magnetic lens comprising a cylindrical radial thin-walled ferromagnetic material 103 having an inner circumference that is at least as long as or longer than the cylindrical thin-walled permanent magnet.
- This cylindrical radial thin electron lens has a cylindrical nonmagnetic space therein, and the radius of the cylindrical nonmagnetic space is approximately 3 of the outer radius of the outer cylindrical radial thin ferromagnetic material. The radius is larger than one part.
- the X-axis and Y-axis directions are directions orthogonal to the Z-axis, and in the case of multi-column, the electron lens is disposed on a plane defined by the X-axis and Y-axis. Instead of strictly the X and Y planes, it may be substantially on the X and Y planes. Further, the X axis and the Y axis are orthogonal to each other, and the X axis and the Y axis may be set anywhere, but the X and Y axes are determined so that the electron lenses are arranged in the X and Y directions.
- the ferromagnetic material composed of the outer cylindrical cylindrical thin ferromagnetic material 101 with the Z axis as the central axis is used to suppress the leakage magnetic field to the outside of the electron lens.
- the magnetic field lines coming out from the cylindrical radial thin permanent magnet 102 magnetized in the radial direction toward the center of the cylindrical axis may not form an axial target magnetic field if the magnetization of the permanent magnet 102 is not uniform. .
- Magnetic field lines 104 having an axisymmetric intensity distribution can be formed inside the electron lens.
- An upper correction electromagnetic coil 107 and a lower correction electromagnetic coil 108 are arranged above and below the cylindrical permanent magnet 102.
- the upper correction electromagnetic coil 107 and the lower correction electromagnetic coil 108 flow currents in opposite directions to correct the magnetic field generated by the permanent magnet 102.
- FIG. 2 is a diagram for explaining a second embodiment of the electron lens of the present invention.
- This electron lens is a cylindrical radial thin-walled electron lens.
- the electron lens is a pair of cylindrical radial thin walls installed inside the outer cylindrical radial thin ferromagnetic material so as to sandwich the cylindrical radial thin permanent magnet magnetized in the radial direction.
- Permanent magnets 112 and 122, and a pair of electromagnetic coils (correcting electromagnetic coils) 114, 115 and 116 having substantially the same inner diameter as that of the cylindrical radial thin-walled permanent magnet, each of the pair of cylindrical radial directions
- the thin permanent magnet and the electromagnetic coil generate a reverse magnetic field.
- An electron beam lithography apparatus or an electron beam inspection apparatus for inspecting a substrate using an electron beam includes an electron beam optical system in which a plurality of the electron gun and the cylindrical radial thin-film magnetic lens are arranged in parallel to the Z axis. It has a lens barrel.
- the permanent magnets 112 and 122 generate magnetic fields in opposite directions as shown in the figure.
- the upper correction electromagnetic coil 114, the central correction electromagnetic coil 115, and the lower correction electromagnetic coil which are three correction electromagnetic coils arranged at the upper, middle, and lower portions of the permanent magnets 112 and 122, respectively.
- Reference numeral 116 corrects the magnetic field generated by the permanent magnets 112 and 122.
- the upper correction electromagnetic coil 114 and the lower correction electromagnetic coil 116 have substantially the same strength and the direction of the generated magnetic field is the same.
- the central correction electromagnetic coil 115 is the same as the upper correction electromagnetic coil 114.
- the direction of the generated magnetic field is opposite with twice the strength of the lower correcting electromagnetic coil 116.
- FIG. 3 is a cross-sectional view taken along line A-A ′ in the first embodiment of the electron lens of the present invention described in FIG.
- the electron lens includes a ferromagnet made of a cylindrical radial thin ferromagnet 101 on the outer periphery, and has a radius of about one-half or less on the inner side of the cylindrical radial thin ferromagnet on the outer periphery.
- a cylindrical radial thin permanent magnet 102 magnetized in the direction is provided.
- this electron lens has an inner circumferential cylindrical radial thin ferromagnetic body 103 that is at least the same or longer in the Z direction than the cylindrical thin permanent magnet inside the cylindrical radial thin permanent magnet. Is a cylindrical radial thin-walled electron lens.
- FIG. 4 shows a diagram of a multi-column electron beam drawing apparatus using the electron gun of the present invention.
- the multi-column electron beam drawing apparatus has a structure 302 in which a plurality of columns called individual column elements 301 having a thickness of about 15 mm to about 40 mm, for example, are two-dimensionally arranged in a number of 10 to 250 or more. Therefore, high-speed Si (silicon) wafer 303 (for example, 300 mm ⁇ ) can be exposed.
- This multi-column structure can also be applied to an electron beam inspection apparatus for inspecting a semiconductor substrate.
- the individual column element 301 is composed of the following parts.
- the electron beam emitted from the electron gun cathode unit 304 is shaped into a rectangle by the first rectangular aperture 305 and imaged on the second rectangular aperture or CP (character projection) mask 308 by the lens optical system 306 in the previous stage.
- the position on the rectangular aperture or CP mask is reshaped by a beam deflector into a beam of the intended size or shape.
- a rectangular beam of an arbitrary size is formed by two rectangular apertures.
- the electron beam that has passed through the character is shaped into an arbitrary and intended beam shape according to the opening formed in the character by irradiating the character at the second predetermined position with the beam. Is done. Further, the lens optical system 309 in the subsequent stage deflects the image on the wafer 303 to an appropriate position and forms an image. When further disassembled, the electron lens systems 306 and 309 are configured with a magnetic lens 307.
- FIG. 6 is a diagram for explaining a multi-column and a wafer.
- An area of 25 ⁇ 25 mm square per column is subjected to electron beam writing or electron beam inspection.
- the column elements 501 are arranged at equal intervals in a two-dimensional horizontal direction (X direction) at a pitch of 25 mm on a 300 mm Si wafer, and the column elements 501 are aligned at equal intervals in a vertical direction (Y direction) at a pitch of 25 mm. .
- Reference numeral 303 denotes a circular outer circumference of a 300 mm Si wafer.
- the column element 501 is installed when approximately half of a rectangular area of 25 mm square drawn by each column element is within the outer periphery of the wafer. Column elements are not installed in other small rectangular areas. Incidentally, in FIG. 6, 120 column elements are installed so that the entire wafer can be drawn.
- FIG. 7 is a view showing a longitudinal section of the electron beam drawing apparatus.
- the electron beam emitted from the electron gun cathode unit 600 is controlled by the suppressor electrode 601 and the extraction electrode 602 for the amount of current emission and the emission shape.
- the electron beam that has received an appropriate electrostatic lens action at the electron gun lens electrode 603 is accelerated to 50 kV at the anode (ground potential) 604. Further, the beam passes through the blanking deflection electrode 610, is shaped into a rectangle by the first rectangular aperture 605, and is imaged on the second rectangular aperture or CP (character projection) mask 606 by the lens optical system 621 in the previous stage.
- CP character projection
- the position on the rectangular aperture or CP mask is reshaped by the beam deflectors 611a and 612b into a beam of the intended size or shape, and at the same time the beams intersect so that the electron beam density of the final image does not change.
- the crossover image is deflected so that it does not move.
- a rectangular beam of an arbitrary size is formed by two rectangular apertures.
- CP Charger Projection
- reference numerals 621, 622, 623, 624, and 625 are magnetic type lenses made of permanent magnets mainly made of samarium cobalt or neodymium magnets.
- the focal position and magnification are ⁇ Since there is an error of about 5%, the correction coils 631a, 631b, 632a, 632b, 633a, 633b, 634a, 634b, 635a, and 635b by the electromagnet are used to focus on a precise position and adjust the magnification.
- a samarium cobalt permanent magnet or a neodymium magnet having a small size and high strength is preferable.
- neodymium magnets are the strongest magnets at the present time, and are the only magnets that can be magnetized in the radial direction with a cylindrical ring, so it is common to want to make effective use of neodymium magnets.
- a change of 1100 ppm in the magnetic field strength of the neodymium magnet causes a focus change of 33 ⁇ m in an electromagnetic lens with a focal depth of 30 mm, and a focal blur of 165 nm with a convergence half angle of 5 mrad.
- the deflection field size also causes a position variation of 50 nm when one side is deflected by 50 ⁇ m. Therefore, it is not acceptable in use without temperature control.
- the temperature of the neodymium magnet In order to stabilize the above temperature instability and use it, it is necessary to control the temperature of the neodymium magnet with an accuracy of 0.001 degrees C or less at a system operating temperature of about 23 degrees C to 24 degrees C. There is.
- the instability of the depth of focus is 33 nm or less, which can be sufficiently used because it can be within 0.165 nm defocus and 0.05 nm lateral displacement.
- the strength change coefficient due to temperature change is 1/3 or less and 0.003 ppm per degree, which further alleviates the problem.
- Actual cooling of the neodymium magnet is performed by immersing the one-stage portion of the multi-column lens including a plurality of neodymium magnets in an insulating liquid refrigerant such as water or fluorinate. By circulating the liquid refrigerant, the temperature can be measured, and heating and cooling can be alternately repeated to be controlled within a certain temperature range.
- an insulating liquid refrigerant such as water or fluorinate.
- Multi-column optical barrels that require temperature control are not just neodymium magnets, but the entire structure of the multi-column vertical direction, such as the entire holding plate of the first rectangular aperture and the entire holding plate of the second aperture. It is important in order to ensure the positional stability of the entire beam that the entire object is temperature-controlled and temperature-controlled so as not to have instability of position fluctuation due to thermal expansion.
- FIG. 8 is a cross-sectional view of a multi-column electron lens.
- Each electron lens is isolated from a vacuum part 133 through which an electron beam passes by O-rings 109a, 109b, 109c, 109d and a vacuum seal cylinder 131.
- the space containing the permanent magnet is filled with a liquid 132 (for example, Fluorinert) and circulated, and is highly accurate.
- a temperature control method is applied to keep the temperature of the liquid at a stability of 0.001 ° C. or lower.
- FIG. 9 shows the configuration of the third embodiment.
- This electron lens has an outer cylinder 201 made of a cylindrical thin-walled ferromagnetic material.
- the outer cylinder 201 is made of pure iron or the like, and suppresses a leakage magnetic field to the outside of the electron lens.
- This ferromagnetic outer cylinder 201 can prevent magnetic field interference between adjacent columns when the electron gun is multi-columned as described above.
- a cylindrical permanent magnet (cylindrical permanent magnet) 202 having a smaller diameter than the outer cylinder 201 is disposed inside the outer cylinder 201.
- the permanent magnet 202 is magnetized in the axial direction (direction parallel to the Z axis). Accordingly, the lines of magnetic force from the permanent magnet 202 are bent from the upper and lower ends of the permanent magnet 202 (both ends in the Z-axis direction) to the center direction after exiting in the direction parallel to the z-axis, and the direction of the center axis (z-axis) It will be a shape that passes through.
- the permanent magnet 202 is made of, for example, samarium cobalt. The permanent magnet 202 can converge the electron beam.
- a space is partitioned inside the outer cylinder 201, and an inner cylinder member 203 with a flange having a flange portion extending in a flange shape toward the outside is provided at the upper and lower ends accommodated inside the permanent magnet 202 in the space. That is, a donut-shaped space is partitioned on the outer peripheral surface of the flanged inner cylinder member 203 and the lower and upper surfaces of the upper and lower flange portions, and the cylindrical permanent magnet 202 is disposed in this space.
- the inner peripheral surface of the permanent magnet 202 is in contact with the inner peripheral surface of the flanged inner cylinder member 203 and the upper surface of the lower flange portion.
- the inner cylinder member 203 with a collar is hollow inside, and this is a refrigerant passage.
- the portion extending in the z direction has a double structure as a whole, and cools the permanent magnet 202 by contact from the inside.
- the refrigerant is a fluid made of a nonmagnetic material, and various commercially available refrigerants (for example, fluorinate) can be used, and water may be used.
- the inner cylinder member 203 with the collar is also formed of a nonmagnetic material such as aluminum.
- the flanged inner cylinder member 203 is supplied with refrigerant from the periphery of the lower flange portion and flows from the lateral direction toward the center portion, and then the refrigerant flows upward in the cylindrical portion, and the upper flange portion. The part flows toward the periphery and flows out to the outside.
- the refrigerant is supplied from the refrigerant tank to the flanged inner cylinder member 203 by a pump, and after the refrigerant is cooled by a heat exchanger or the like, the refrigerant returns to the refrigerant tank. As will be described later, the flow direction of the refrigerant may be reversed.
- a cylindrical correction coil 204 is disposed inside the inner cylinder member 203 with the collar. This is for correcting the magnetic field generated by the permanent magnet 202, and the magnetic field strength can be adjusted to a predetermined value by the current flowing therethrough. That is, the correction coil 204 is used to compensate for the excess or deficiency of the magnetic field strength caused by the permanent magnet 202.
- a part of the flanged inner cylinder member 203 is protruded inward to support the correction coil 204 from below.
- the outer cylinder 201 is divided into separate members above and below the flange portion.
- the flange portion may be divided into a plurality of portions, and the gap portion may be the outer cylinder 201.
- the flange portion has a refrigerant passage inside, but has a sufficient flow path area, and since it is connected to the pipe line in the peripheral part, it does not require a large cross-sectional area as the pipe line area and is divided into a plurality of parts. There is no problem.
- the flanged inner cylinder member 203 is intended to absorb the heat from the correction coil 204 and suppress the temperature change of the permanent magnet 202, and a large cross-sectional area is not required for the radial passage.
- the passage can take various forms such as a spiral, a meandering passage, or a plurality of passages.
- a stig coil 205 for shaping the electron beam is provided above the correction coil 204.
- the flanged inner cylinder member 203 also absorbs the heat generated by the stig coil 205.
- the stig coil 205 is a coil set in which four coils are arranged in a cross shape, and the direction in which the four coils are arranged differs by 45 degrees from each other.
- Two sets are arranged along the line.
- the two coils facing in the vertical direction both have the south pole facing the center, and the two coils facing in the lateral direction have the north pole facing the center. Yes.
- a donut-shaped disk portion 206 made of the same magnetic material as that of the outer cylinder 201 is provided on the upper flange portion of the flanged inner cylinder member 203, and the magnetic field of the permanent magnet 202 is provided. It divides the space dominated by and the space above.
- FIG. 10 shows the strength of the magnetic field in the electron lens having such a configuration.
- the z axis is a horizontal axis
- the left side is the top
- the sample is located on the right side.
- the strength of the magnetic field is a large negative value inside the permanent magnet 202 in the z-axis direction, and has a certain amount of positive peaks near the top and bottom of the permanent magnet 202.
- the permanent magnet 202 is arranged at a position of ⁇ 20 mm to 0 mm, and the sample 207 is arranged at a position of 10 mm.
- a line connecting the diamond points indicates a case where the thickness of the magnet is 12 mm, and a line connecting the square points (series 2) is a thickness of 10.
- the electron lens having such a configuration can converge the electron beam finely and suppress the occurrence of aberration of the electron lens due to temperature.
- the electron lens in a multi-column electron beam irradiation apparatus, it is necessary to make the electron lens as small and thin as possible.
- a convergence half angle of about 10 mrad is required. Even if a convergence half angle of about 10 mrad is taken, the spherical aberration coefficient needs to be about 5 mm so that the beam can be narrowed to about 5 nm. Therefore, it is necessary to make the spherical aberration coefficient very small.
- a permanent magnet lens capable of forming a magnetic field by a large thick lens in a space of 20 mm to 30 mm directly above a sample (wafer) that is an electron beam irradiation target.
- a permanent magnet 202 magnetized in the cylindrical axial direction is used.
- the convergence intensity of the beam of the electron lens works in proportion to an amount obtained by integrating the square of the magnetic field B in the Z-axis direction, and the magnetic field of the lens is long in the Z direction and strong near the sample surface. For this reason, spherical aberration is reduced when a magnetic field is generated.
- the sample surface be in the middle of the second plus magnetic mountain in FIG. In this way, a relatively long negative magnetic field is used as an effective lens magnetic field, the sample surface is close to this, and the work king distance is small.
- the cooling performed by circulating the refrigerant in the flanged inner cylinder member 203 is performed in order to ensure the thermal stability of the permanent magnet 202.
- the permanent magnet 202 is formed of samarium cobalt, the magnetic field strength changes with a temperature coefficient of 300 ppm / degree C (change in magnetic field strength with respect to a change of 1 degree is 300 / million).
- the temperature of the permanent magnet 202 is controlled at such a temperature stability that the temperature change becomes 3 mK, the stability of 1 ppm / ° C can be maintained.
- the refrigerant for example, fluorinate, which is a fluorine-based inert fluid having high thermal conductivity, is preferably used.
- the permanent magnet 202 vibrates due to the circulation of the refrigerant, it adversely affects the convergence of the electron beam. Therefore, it is necessary to consider the smooth circulation of the refrigerant and the avoidance of minute vibrations. Note that the refrigerant thermally separates the permanent magnet 202 from the permanent magnet 202 and a member that generates Joule heat, such as the correction coil 204 and the stig coil 205. Thereby, the temperature stability of the permanent magnet 202 is also ensured.
- FIG. 11 schematically shows the coolant channel.
- the refrigerant that has flowed through the upper flange portion flows into the upper flange portion of the next lens, and then flows through the cylindrical member between the central coil and the permanent magnet to the lower flange portion.
- the fluid flows in one direction by repeating such a flow path alternately.
- the fluid flowing in from the left end flow path is divided into four rows, passes through the respective flow paths, and exits from the right end flow path to the outside.
- the correction coil 204 it is necessary to estimate the amount of heat generated by the correction coil 204.
- Heat generation in the electromagnetic coil due to normal Joule heat is 300-500 W per lens.
- the correction coil 204 is ⁇ 5% in terms of the applied magnetic field error of the permanent magnet 202. Accordingly, the calorific value is 0.25% and does not exceed 1.25W. Even if there are 100 lenses, it is 125W, so if 30CC is flowing at 100CC per second, a temperature difference of 0.3 degrees will occur at the exit and the entrance, but the steady temperature stability is less than 0.003
- This control can be sufficiently achieved by attaching a thermometer to each part of the lens and returning the fluid to the chiller, which is a refrigerant storage tank, and controlling the temperature. That is, a special heat exchanger or the like is considered unnecessary.
- the donut-shaped disc portion 206 made of a ferromagnetic material is omitted. This is because the disc portion 206 is used to match the magnetic potentials in the same plane and is not essential as a magnetic lens.
- the position of the both may be set on the inside or the outside. Therefore, in this embodiment, the permanent magnet 202 is disposed on the inner side, the correction coil 204 is disposed on the outer side, and the flanged inner cylinder member 203 through which the refrigerant flows is disposed therebetween.
- the permanent magnet 202 may be an integral cylindrical permanent magnet as in the third embodiment. However, in this embodiment, the permanent magnet 202 is prepared for a case where there is a variation in the magnetic field strength on the axis or a collapse of the axial symmetry. Thus, the structure is divided into a plurality of parts in the axial direction. That is, the permanent magnet 202 is formed by laminating split ring magnets 202a, 202c, 202e, 202g, 202i made of integral samarium cobalt that is short in the axial direction in the axial direction. Therefore, each divided ring magnet 202a, 202c, 202e, 202g, 202i has a thickness of about one fifth of the total thickness.
- ring plates 202b, 202d, 202f, and 202h which are thin-film circular ring plate shapes, are disposed in the axial gaps of the divided ring magnets 202a, 202c, 202e, 202g, and 202i.
- These ring plates 202b, 202d, 202f, and 202h are formed of a nonmagnetic material such as aluminum, or pure iron as a ferromagnetic material, or another type of permanent magnet such as a permanent magnet neodymium.
- the magnetic field distribution intensity on the central Z axis may vary, or the magnetic field vector may be bent from the Z axis.
- the variation in magnetic field strength may be about plus or minus 5%.
- the target strength is determined in advance at a relatively weak strength near the average value, and when the strength of the divided ring magnets 202a, 202c, 202e, 202g, 202i is higher than the average value as a component, non-magnetism is present in the joint portion.
- the ring plates 202b, 202d, 202f, and 202 are sandwiched between them, and when they are weak, the ferromagnetic ring plates 202b, 202d, 202f, and 202 are sandwiched so as to increase the magnetic field.
- the five divided ring magnets 202a, 202c, 202e, 202e, 202e, 202e, 202e, 202e, 202i, 202i, and 202i are assembled by rotating the individual divided ring magnets 202a, 202c, 202e, 202g, 202i.
- the structure can be assembled so that the magnetic field intensity obtained by adding 202g and 202i is close to the target value, and the magnetic field vector along the central axis Z-axis direction is closest to a straight line.
- the material is, for example, permalloy, pure iron, or above and below the ring-shaped permanent magnets 202, 202a, 202c, 202e, 202g, 202i.
- a thin ferromagnetic disk using a permender also called permendur may be used.
- the thin ferromagnetic ring 211 is arranged on the end surface of the cylindrical permanent magnet 212 constituting the electron lens on the sample 207 side, that is, on the electron beam emission side.
- the ferromagnetic ring 211 has an inner diameter that is substantially the same as that of the cylindrical permanent magnet 212, but the outer diameter is smaller than the outer diameter of the cylindrical permanent magnet 212.
- the radial width is about of the radial width of the cylindrical permanent magnet 212.
- the outer diameter of the ferromagnetic ring 211 is substantially the same as the inner diameter of a cylindrical permanent magnet 213 described later.
- the ferromagnetic ring 211 is a thin ferromagnetic ring for homogenizing the magnetic field to prevent the cylindrical permanent magnet 212 from generating an axially asymmetric magnetic field near the Z axis and adversely affecting the lens characteristics. is there.
- a strong magnetic field of 4000 Gauss or more must be created at a position about 10 mm high on the surface of the sample 207, and the spherical aberration coefficient must be 10 mm or less.
- the cylindrical permanent magnet 212 In order to form such a strong axial magnetic field, the cylindrical permanent magnet 212 must be made of axially magnetized samarium cobalt and its hole diameter (inner diameter) must be 6 mm or less.
- a cylindrical permanent magnet 213 that is an electron lens having a large hole diameter (large inner diameter) is installed in the electron beam flying direction (incident side) with a polarity opposite to that of the cylindrical permanent magnet 212.
- a magnetic field distribution curve 216 is obtained by a cylindrical permanent magnet 212 which is a main permanent magnet.
- the magnetic field generated by the cylindrical permanent magnet 213 which is a secondary electron lens is like a magnetic field distribution curve 217. Therefore, the maximum value of the magnetic field just above the surface of the sample 207 is large in the magnetic field obtained by the electron lens including the two cylindrical permanent magnets 212 and 213 added together. Since the integral value of the square of the magnetic field along the Z axis in the Z direction is equal to the lens strength, a small spherical aberration can be obtained by the high strength of the lens magnetic field directly above the surface of the sample 207.
- the convergence angle of the beam ⁇ is 10 mrad
- the change in the focal depth of the beam due to the Coulomb effect is small
- the spherical aberration coefficient is 10 mm
- the spherical aberration itself is about 10 nm.
- the ferromagnetic ring 211 is provided on the end face of the cylindrical permanent magnet 212 facing the sample 207, the magnetic field immediately above the surface of the sample 207 is uniform in the circumferential direction. A precise electron lens can be obtained.
- a low-aberration lens with a small beam blur due to the Coulomb effect and a small spherical aberration coefficient can be realized, so that the power of the electron beam exposure apparatus can be enhanced.
- correction coils 214 and 215 for correcting the magnetic field strength of the permanent magnet are provided immediately on the inner surface of the cylindrical ferromagnetic body 201.
- correction coils 214 and 215 are provided corresponding to the cylindrical permanent magnets 212 and 213 and generate appropriate correction magnetic fields, respectively.
- one correction coil may be used. It is good also as above.
- a flanged inner cylinder member (refrigerant flow path) 203 is formed so that heat generated by the correction coils 214 and 215 is not transmitted to the cylindrical permanent magnets 212 and 213.
- the cylindrical permanent magnets 212 and 213 can be formed by being divided into a plurality of parts as described above, or by sandwiching a magnetic body inside.
- FIG. 16 shows a modification of the fifth embodiment.
- a cylindrical permanent magnet 219 magnetized in the radial direction is provided instead of the cylindrical permanent magnet 213 described above.
- the cylindrical permanent magnet 219 is radially magnetized so that the magnetic field generated on the cylindrical permanent magnet 212 side becomes a magnetic field that strengthens the main lens magnetic field of the cylindrical permanent magnet 212. Also with this configuration, it is possible to increase the magnetic field in the vicinity of the electron beam emitting portion.
- the multi-column electron beam lithography system can expose an LSI pattern having a line width of 15 nm to 10 nm required from 2015 to 2020 with a processing capacity of, for example, about 10 to about 20 or more per hour on a 300 mm wafer.
- a processing capacity of, for example, about 10 to about 20 or more per hour on a 300 mm wafer.
- EUV ultra-short ultraviolet
- an LSI pattern having a line width of about 15 nm to about 10 nm can be exposed only with a resist (photosensitive material) having a sensitivity lower than 100 ⁇ C / cm 2.
- the beam is blurred by a large current, only a current value of about several microamperes per column can be used. Since a 300 mm wafer is about 600 cm 2, an exposure time of 60000 seconds or more is required. In a multi-column of several tens or more, this can be set to approximately 600 seconds or less.
- the average fill rate can be described with a pattern of about 20% or less, so that there is a possibility that exposure can be performed in about 120 seconds or less. This corresponds to a processing capacity of 20 sheets or more per hour.
- the column element in order to expose 300mm diameter silicon wafers in parallel with several dozen or more multi-columns.
- the column element must be at least 25 mm in diameter.
- Patent Document 1 it is not possible to arrange several to ten or more columns on one wafer, but the column of the present invention can be reduced to 25 mm or less and a fraction of the conventional one. Therefore, it is possible to make tens to 100 multi-columns.
- Joint magnet 102 which consists of cylindrical thin-walled ferromagnetic bodies on the outer periphery 102
- Joint magnet 104 which consists of cylindrical thin-walled ferromagnetic bodies on the inner circumference 104
- Magnetic flux 105 Disc joint magnet 106 which consists of upper ferromagnetic bodies
- Lower ferromagnetic body Disk joint magnet 107 composed of upper part, correction electromagnetic coil 108 on the lower side, correction electromagnetic coil 109 on the lower side, O-ring 110, magnetic flux density distribution 112, thin cylindrical permanent magnet 113 on the upper part, and joint magnet made of thin cylindrical ferromagnetic material on the inner periphery of the upper part 114
- Upper Correction Electromagnetic Coil 115 Center Correction Electromagnetic Coil 116
- Lower Correction Electromagnetic Coil 122 Lower Cylindrical Thin Permanent Magnet 123 Joint Magnet made of Cylindrical Thin Ferromagnetic Material on Lower Inner Perimeter 131 Vacuum Seal Cylinder
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Abstract
Description
本実施形態は、半導体(LSI)製造工程の回路パターンを描画するリソグラフィ分野で活用される電子ビーム描画技術における処理能力を飛躍的に高める多数個の電子ビームを用いたマルチコラム電子ビーム装置において、微細径レンズ構造が可能で、低消費電力の、高精度描画を可能にする、永久磁石を用いた電子レンズ、これを用いたマルチコラム電子ビーム描画装置に関する。技術の中心となるレンズ技術は電子ビームを用いた電子ビーム検査装置に同様に使用でき、効果も同様に並列化による高速化が出来るのでマルチコラム電子ビーム検査装置にも適用できるが、詳細な説明は主に電子ビーム描画装置について行う。
図2は、本発明の電子レンズの第二の実施形態を説明する図である。この電子レンズは、円筒型半径方向薄肉磁界型電子レンズである。電子レンズは、外周の円筒型半径方向薄肉強磁性体の内側に、半径方向に着磁された前記円筒型半径方向薄肉永久磁石を挟むように設置された、1対の前記円筒型半径方向薄肉永久磁石112と122と、前記円筒型半径方向薄肉永久磁石の内径と略内径が等しい1対の電磁コイル(補正用電磁コイル)114と115および116を具備前記各々の対の前記円筒型半径方向薄肉永久磁石および電磁コイルは逆向き磁界を発生する。電子ビーム描画装置または電子ビームを用いて基板の検査を行なう電子ビーム検査装置は、前記電子銃と前記円筒型半径方向薄肉磁界型電子レンズを、前記Z軸に平行に複数個並んだ電子ビーム光学鏡筒を有する。
図9には、第三の実施形態の構成が示されている。この電子レンズは、円筒状の薄肉強磁性体からなる外側円筒201を有している。この外側円筒201が純鉄などからなり、電子レンズの外部への漏れ磁場を抑制する。この強磁性体の外側円筒201により、上述のようにして、電子銃をマルチコラム化した際に隣接するコラムとの間で磁界干渉が起きないようにすることができる。
下側フランジ部から入った流体が内筒部を通過して上側フランジに抜ける場合を考慮し、上側で隣接するコラムのつば付内筒部材203に至る場合を実線、下側で隣接するコラムのつば付内筒部材203に至る場合を点線で表している。
図12には、第四の実施形態では、第三の実施形態に比べ、永久磁石202と、補正コイル204の内外が入れ替わっている。
次に、第五の実施形態について、図15に基づいて説明する。
102 円筒薄肉永久磁石
103 内周の円筒薄肉強磁性体からなる継磁石
104 磁束
105 上部の強磁性体からなる円板継磁石
106 下部の強磁性体からなる円板継磁石
107 上部の補正用電磁コイル
108 下部の補正用電磁コイル
109 O-リング
110 磁束密度分布
112 上部の円筒薄肉永久磁石
113 上部の内周の円筒薄肉強磁性体からなる継磁石
114 上部の補正用電磁コイル
115 中央部の補正用電磁コイル
116 下部の補正用電磁コイル
122 下部の円筒薄肉永久磁石
123 下部の内周の円筒薄肉強磁性体からなる継磁石
131 真空シール筒
132 冷却用フロリナート
201 外側円筒
202 永久磁石
203 つば付内筒部材
204 補正用コイル
205 スティグコイル
207 描画試料またはシリコンウェハ
211 強磁性体リング
212,213 円筒型永久磁石
214,215 補正用コイル
216 円筒型永久磁石212による軸方向磁界分布曲線
217 円筒型永久磁石213による軸方向磁界分布曲線
218 円筒型永久磁石212と円筒型永久磁石213の合計の軸方向磁界分布曲線
219 他の円筒型永久磁石
301 一本の電子ビームコラム
302 マルチ電子ビームコラム
303 半導体ウェハ
304 電子銃
305 第一矩形アパーチャ
306 矩形整形偏向器
307 磁界レンズ
308 第二矩形アパーチャ
309 位置決め偏向器
601 サプレッサー電極
602 引き出し電極
603 レンズ電極
604 陽極(アース電位)
605 第一矩形アパーチャ
606 第二矩形アパーチャ
607 ラウンドアパーチャ
608 位置決め偏向器
609 試料(Siウェハ)
610 ブランキング電極
611a 矩形整形偏向器1
611b 矩形整形偏向器2
621 投影レンズ
622 電子レンズ
623、624 縮小レンズ
625 投影レンズ
631a、631b~635a、635b 補正用コイル
Claims (12)
- 電子ビームをZ軸方向に射出する電子銃を具備する電子ビーム装置において利用される電子レンズであって、
Z軸を中心軸とした円筒型強磁性体からなる外側円筒と、
前記外側円筒の内側に配置された、Z軸方向に着磁された円筒型永久磁石と、
前記円筒型永久磁石の内側または外側に、前記円筒型永久磁石と間隙をおいて配置され、前記円筒型永久磁石によるZ軸方向の磁界強度を調整する補正用コイルと、
前記円筒型永久磁石と、前記補正用コイルとの間隙に配置され、内部に冷媒が流通されて、前記円筒型永久磁石の温度変化を抑制する冷媒流路と、
を有する電子レンズ。 - 請求項1に記載の電子レンズであって、
前記円筒型永久磁石における電子ビーム射出側のZ軸方向端面に、前記円筒型永久磁石による磁界を平均化する、薄い強磁性体リングを設置する電子レンズ。 - 請求項1または2に記載の電子レンズであって、
前記円筒型永久磁石は、
Z軸方向に並んで配置され、前記電子ビームの入射側に位置する第1円筒型永久磁石と電子ビームの射出側に位置する第2円筒型永久磁石を含み、
前記第1円筒型永久磁石と第2円筒型永久磁石は、互いに反対方向の磁界を発生するように着磁されており、前記第1円筒型永久磁石は第2円筒型永久磁石に比べ内径が大きく、前記第2円筒型永久磁石により発生される中心磁界に対し、第1円筒型永久磁石による中心磁界が重ねられる電子レンズ。 - 請求項1または2に記載の電子レンズであって、
前記円筒型永久磁石の、前記電子ビームの入射側に配置される他の円筒型永久磁石をさらに含み、
前記他の円筒型永久磁石は、前記円筒型永久磁石側に発生する磁界が前記円筒型永久磁石により発生される磁界を強める磁界となるように径方向着磁されている電子レンズ。 - 請求項1~4のいずれか1つに記載の電子レンズであって、
前記冷媒流路は、前記間隙に位置する円筒状の流路を有する電子レンズ。 - 請求項1~5のいずれか1つに記載の電子レンズをZ軸に略直交する平面上に複数個配列した複数の電子ビームを試料に向けて照射する電子ビーム装置。
- 少なくとも1段の電子ビームを収束結像する円筒型半径方向薄肉磁界型の電子レンズであって、
Z軸を中心軸とした外周の円筒型半径方向薄肉強磁性体からなる強磁性体と、
前記外周の円筒型半径方向薄肉強磁性体の内側に、長さが略2分の1以下の半径方向に着磁された円筒型半径方向薄肉永久磁石と、
前記円筒型半径方向薄肉永久磁石の内側に、少なくとも前記円筒型薄肉永久磁石とZ方向の長さが同じかまたは長い、内周の円筒型半径方向薄肉強磁性体と、
を具備する電子レンズ。 - 請求項7に記載の電子レンズであって、
内部に円筒状の非磁性空間を具備し、前記円筒状の非磁性空間の半径は前記外周の円筒型半径方向薄肉強磁性体の外周の半径の略3分の1よりも大きな半径であることを特徴とする電子レンズ。 - 請求項8に記載の電子レンズにおいて、
前記外周の円筒型半径方向薄肉強磁性体の内側に、半径方向に着磁された前記円筒型半径方向薄肉永久磁石を挟むように設置された、前記円筒型半径方向薄肉永久磁石内径と略内径が等しい1対の電磁コイルを具備し、
前記1対の電磁コイルは前記薄肉永久磁石の強度を補正する逆向き磁界を発生することを特徴とする電子レンズ。 - 請求項9に記載の電子レンズにおいて、
前記外周の円筒型半径方向薄肉強磁性体の上面または下面の一方、またはその両面に略外周半径の3分の1よりも大きな円形開口を具備する円板状の強磁性体を具備することを特徴とする電子レンズ。 - 請求項7~10のいずれか1つに記載の電子レンズをZ軸に略直交する平面上に複数個配列した複数の電子ビームを対象物に向けて照射する電子ビーム装置。
- 請求項11に記載する電子ビーム装置であって、
前記Z軸方向とそれぞれに略直交するX軸方向とY軸方向のそれぞれの方向に、X軸方向にはピッチ略PXで等間隔に複数個配列し、Y軸方向にはピッチ略PYで等間隔に複数個配列した複数個の電子レンズ群を有し、
前記電子レンズ群に液体または気体冷媒を流して温度制御をおこなうことを特徴とする電子ビーム装置。
Priority Applications (6)
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US13/814,190 US20130134322A1 (en) | 2010-10-27 | 2011-10-25 | Electron lens and the electron beam device |
JP2012511468A JP5148014B2 (ja) | 2010-10-27 | 2011-10-25 | 電子レンズおよび電子ビーム装置 |
CN201180037664.XA CN103038855B (zh) | 2010-10-27 | 2011-10-25 | 电子透镜和电子束装置 |
EP11836299.5A EP2587517B1 (en) | 2010-10-27 | 2011-10-25 | Electron lens and the electron beam device |
KR1020137000919A KR101861210B1 (ko) | 2010-10-27 | 2011-10-25 | 전자 렌즈 및 전자빔 장치 |
US14/271,940 US9418815B2 (en) | 2010-10-27 | 2014-05-07 | Tubular permanent magnet used in a multi-electron beam device |
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US13/814,190 A-371-Of-International US20130134322A1 (en) | 2010-10-27 | 2011-10-25 | Electron lens and the electron beam device |
US14/271,940 Continuation US9418815B2 (en) | 2010-10-27 | 2014-05-07 | Tubular permanent magnet used in a multi-electron beam device |
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EP (1) | EP2587517B1 (ja) |
JP (1) | JP5148014B2 (ja) |
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JP5148014B2 (ja) | 2013-02-20 |
TWI539483B (zh) | 2016-06-21 |
EP2587517B1 (en) | 2015-09-09 |
US20130134322A1 (en) | 2013-05-30 |
KR20130138713A (ko) | 2013-12-19 |
CN103038855B (zh) | 2016-02-03 |
TW201225144A (en) | 2012-06-16 |
EP2587517A4 (en) | 2014-05-07 |
US9418815B2 (en) | 2016-08-16 |
KR101861210B1 (ko) | 2018-05-25 |
CN103038855A (zh) | 2013-04-10 |
EP2587517A1 (en) | 2013-05-01 |
JPWO2012057166A1 (ja) | 2014-05-12 |
US20140252245A1 (en) | 2014-09-11 |
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